Engineering topics

D Spry

Publications and source records attributed to D Spry.

4 records

NASA NTRS2023

Processing Choices for Achieving Long Term IC Operation at 500° C

The prospects for beneficial infusion of integrated circuits (ICs) into previously inaccessible extreme-temperature application environments has increased with recent NASA Glenn demonstrations of 4H-SiC Junction Field Effect Transistor & Resistor (JFET-R) chips functioning for over a year at 500 °C in air ambient [1]. This paper focuses on fabrication process choices believed key to demonstrated 500 °C durability that must be considered when porting this uniquely durable IC capability into commercial foundry manufacturing.

SiC, JFET, Integrated Circuits, High-Temperature, ↗

NASA NTRS2020

Progressing -190 °C to +500 °C Durable SiC JFET ICs From MSI to LSI

This invited paper describes prototype SiC JFET integrated circuit (IC) and packaging technology that has produced arguably the most harsh-environment durable electronics ever demonstrated. Prototype medium-scale integration (MSI) ICs fabricated by NASA Glenn Research Center have successfully operated for over 1 year in 500 °C air-ambient, over 60 days in 460 °C and 9.3 MPa pressure caustic Venus surface environment test chamber, from -190 °C to +812 °C, and radiation exposure through 7 MRad(Si) total ionizing dose and 86 MeV-cm2/mg heavy ion strikes. Recent on-going work focused on upscaling this “go anywhere” IC capability from MSI to large-scale integration (LSI) prototype via benchmark memory ICs is described.

Integrated Circuits↗

NASA NTRSDate not supplied

Progress Towards Prolonged IC Deployment Into Previously Inaccessible Hostile Environments Via Development of SiC JFET-R ICs

This invited plenary paper summarizes recent significant progress towards development and deployment of manufacturable SiC JFET-R ICs technology for beneficial prolonged use in extreme environmental conditions previously inaccessible to semiconductor electronics.

Integrated Circuit↗

NASA NTRSDate not supplied

Processing Choices for Achieving Long Term IC Operation at 500 °C

The prospects for beneficial infusion of integrated circuits (ICs) into previously inaccessible extreme-temperature application environments has increased with recent NASA Glenn demonstrations of 4H-SiC Junction Field Effect Transistor & Resistor (JFET-R) chips functioning for over a year at 500 °C in air ambient. This paper focuses on fabrication process choices believed key to demonstrated 500 °C durability that must be considered when porting this uniquely durable IC capability into commercial foundry manufacturing.

silicon carbide↗