Search NASA⌕ Search

NASA NTRS · 20240007246

KSC Child Development Center (Potential Release Location 149) Confirmatory Sampling Report and Interim Measures Work Plan

Abstract

This Confirmatory Sampling (CS) Report and Interim Measures (IM) Work Plan was prepared for the National Aeronautics and Space Administration (NASA), Kennedy Space Center (KSC), Florida, by HydroGeoLogic, Inc. (HGL) under Contract Number 80KSC019D0012, Task Order 80KSC019F0118. This document presents the results of the CS activities performed in March 2022, and May 202, at the KSC Child Development Center (KCDC), Potential Release Location (PRL) 149, KSC, Florida. This report additionally presents the results of an assessment conducted in July 2023 to determine whether construction activities in 2023 to replace certain playground equipment and the rubberized play surface allowed soil contaminated by arsenic (As) to migrate from beneath the play surface.

Explore related subjects

Keep this discovery

Explore connections, maps & timelines

BibTeXRIS

Timothy M Jellett. 2024-07-01. KSC Child Development Center (Potential Release Location 149) Confirmatory Sampling Report and Interim Measures Work Plan. https://ntrs.nasa.gov/citations/20240007246

Cite the original work for its findings. Save a collection to share your selection of sources.

KEEP EXPLORING

Related reports

Multi-Analytical Investigation of Arsenical Transfer and Remediation on Nineteenth-Century Green Books

Books containing heavy metals, specifically nineteenth-century green arsenical books, have been identified at Northwestern University Libraries, raising health and safety concerns related to handling. Copper acetoarsenite pigments, such as emerald green, were detected on book covers, decorative page edges, labels, and other components using noninvasive analytical techniques including X-ray fluorescence (XRF), Raman spectroscopy, and Fourier-transform infrared (FTIR) spectroscopy. Further examination of selected volumes using synchrotron radiation (SR) techniques revealed pigment migration, degradation, and arsenic transfer to adjacent books. This paper expands on initial findings through two related experiments. The first explored the transfer of arsenic using mechanical friction; Staedtler Mars® white vinyl erasers rubbed on arsenical books generated crumbs which were analyzed via scanning electron microscopy–energy-dispersive X-ray spectroscopy (SEM-EDX). Results confirmed the transfer of arsenic, copper, and lead, with decorative page edges being particularly prone to shedding arsenic onto other materials. The second experiment tested remediation methods on a book contaminated by prolonged exposure to an arsenical neighbor. Surface cleaning using erasers and a vacuum removed flecks of pigment but did not eliminate non-chromophoric arsenic as confirmed by SR analyses, which highlights its presence either as a degradation product embedded within the paper or present in the paper as part of its production process. Findings demonstrate the acute toxicity risk posed by arsenical books and support the need for safe handling protocols. However, materials with only trace levels of arsenic embedded during production may pose a lower risk of transfer. Cross contamination beyond prolonged direct contact appears limited. These results highlight critical considerations for library preservation practices and future research on arsenic in historical materials.

arsenic↗

Effect of Near-Interface Compensation of CdSeTe Absorber Layers on Solar Cell Performance

Arsenic has been shown to be an effective p-type dopant of CdTe. However, challenges remain in the fabrication of high efficiency CdTe solar cells using As. As-doped CdTe is prone to self-compensation and observed accumulation of dopant atoms in CdTe near the interface with MgZnO (MZO) suggests that this could be occurring. In this study, we use SCAPS 1-D modeling software to investigate the effect of near-interface compensation. We consider three cases: shallow donors, deep recombination centers, and a thin layer of excess positive charge accumulation. All of these cases are shown to have significant effects on the current-voltage characteristics, while the thin charge layer also affects capacitance-voltage measurements.

arsenic↗