DOE OSTI · 1028357
Power electronics reliability.
Abstract
The project's goals are: (1) use experiments and modeling to investigate and characterize stress-related failure modes of post-silicon power electronic (PE) devices such as silicon carbide (SiC) and gallium nitride (GaN) switches; and (2) seek opportunities for condition monitoring (CM) and prognostics and health management (PHM) to further enhance the reliability of power electronics devices and equipment. CM - detect anomalies and diagnose problems that require maintenance. PHM - track damage growth, predict time to failure, and manage subsequent maintenance and operations in such a way to optimize overall system utility against cost. The benefits of CM/PHM are: (1) operate power conversion systems in ways that will preclude predicted failures; (2) reduce unscheduled downtime and thereby reduce costs; and (3) pioneering reliability in SiC and GaN.
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Kaplar, Robert James, Brock, Reinhard C, Marinella, Matthew, King, Michael Patrick, Stanley, James K, Smith, Mark A, Atcitty, Stanley. 2010-10-01. Power electronics reliability.. https://www.osti.gov/biblio/1028357
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