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DOE OSTI · 1331170

Three dimensional strained semiconductors

Voss, Lars·Conway, Adam·Nikolic, Rebecca J.·Leao, Cedric Rocha·Shao, Qinghui
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Abstract

In one embodiment, an apparatus includes a three dimensional structure comprising a semiconductor material, and at least one thin film in contact with at least one exterior surface of the three dimensional structure for inducing a strain in the structure, the thin film being characterized as providing at least one of: an induced strain of at least 0.05%, and an induced strain in at least 5% of a volume of the three dimensional structure. In another embodiment, a method includes forming a three dimensional structure comprising a semiconductor material, and depositing at least one thin film on at least one surface of the three dimensional structure for inducing a strain in the structure, the thin film being characterized as providing at least one of: an induced strain of at least 0.05%, and an induced strain in at least 5% of a volume of the structure.

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36 MATERIALS SCIENCE

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Voss, Lars, Conway, Adam, Nikolic, Rebecca J., Leao, Cedric Rocha, Shao, Qinghui. 2016-11-08. Three dimensional strained semiconductors. https://www.osti.gov/biblio/1331170

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36 MATERIALS SCIENCE↗