Search NASA⌕ Search

DOE OSTI · 1388721

Li-Ion Synaptic Transistor for Low Power Analog Computing

Also available from

Abstract

The source did not provide an abstract. Follow the original record for more information.

Explore related subjects

Keep this discovery

Explore connections, maps & timelines

BibTeXRIS

Fuller, Elliot J., Gabaly, Farid El, Léonard, François, Agarwal, Sapan, Plimpton, Steven J., Jacobs-Gedrim, Robin B., James, Conrad D., Marinella, Matthew J., Talin, A. Alec. 2016-11-22. Li-Ion Synaptic Transistor for Low Power Analog Computing. https://doi.org/10.1002/adma.201604310

Cite the original work for its findings. Save a collection to share your selection of sources.

KEEP EXPLORING

Related reports

Parallel programming of an ionic floating-gate memory array for scalable neuromorphic computing

Neuromorphic computers could overcome efficiency bottlenecks inherent to conventional computing through parallel programming and readout of artificial neural network weights in a crossbar memory array. However, selective and linear weight updates and <10-nanoampere read currents are required for learning that surpasses conventional computing efficiency. We introduce an ionic floating-gate memory array based on a polymer redox transistor connected to a conductive-bridge memory (CBM). Selective and linear programming of a redox transistor array is executed in parallel by overcoming the bridging threshold voltage of the CBMs. Synaptic weight readout with currents <10 nanoamperes is achieved by diluting the conductive polymer with an insulator to decrease the conductance. The redox transistors endure >1 billion write-read operations and support >1-megahertz write-read frequencies.

bio-inspired, energy storage (including batteries ↗

Assessing Substitution Effects on Surface Chemistry by in Situ Ambient Pressure X-ray Photoelectron Spectroscopy on Perovskite Thin Films, BaCe x Zr 0.9– x Y 0.1 O 2.95 ( x = 0; 0.2; 0.9)

Performance of proton-solid oxide fuel cells (H+-SOFC) is governed by ion transport through solid/gas interfaces. Major breakthroughs are then intrinsically linked to a detailed understanding of how parameters tailoring bulk proton conductivity affect surface chemistry in situ, at an early stage. In this work, we studied proton and oxygen transport at the interface between H+-SOFC electrolyte BaCexZr0.9–xY0.1O2.95 (x = 0; 0.2; 0.9) thin films and the gas (100 mTorr of H2O and O2) by using synchrotron-based ambient pressure X-ray photoelectron spectroscopy at operating temperature (>400 °C). We developed highly textured BaCexZr0.9–xY0.1O2.95 epitaxial thin films, which exhibit high level of in-plane proton conductivity, that is, up to 0.08 S cm–1 at 500 °C for x = 0.9. Upon applying 100 mTorr water partial pressure above 300 °C, major changes are observed only in the O 1s and Y 3d core level spectra, with a clear Zr/Ce ratio dependency. OH– formation is favored by Ce content while initiated near Y. Hydration is also associated with surface secondary phase growth comprising oxygen-under-coordinated yttrium and/or yttrium hydroxide. With BaCe0.2Zr0.7Y0.1O2.95, high levels of ionic conductivities and chemical stability are obtained as a result of the optimized surface reaction kinetics, with low activation energy barrier for proton transport while restraining formation of OH–/SO42– adsorb species.

bio-inspired, energy storage (including batteries ↗