DOE OSTI · 1616644
III/V silicon hybrid laser based on a resonant Bragg structure
Abstract
We demonstrate a laser tunable in intensity with gigahertz tuning speed based on a III/V reflective semiconductor optical amplifier (RSOA) coupled to a silicon photonic chip. The silicon chip contains a Bragg-based Fabry–Perot resonator to form a passive bandpass filter within its stopband to enable single-mode operation of the laser. We observe a side mode suppression ratio of 43 dB, linewidth of 790 kHz, and an optical output power of 1.65 mW around 1530 nm. We also investigate using a micro-ball lens as an alternative coupling method between the RSOA and the silicon chip.
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Davis, Jordan A. (ORCID:0000000343483295), Kim, Myun Sik, El Amili, Abdelkrim (ORCID:0000000269742673), Trotter, Douglas C., Starbuck, Andrew L., Dallo, Christina, Pomerene, Andrew T., DeRose, Christopher T., Lentine, Anthony L., Fainman, Yeshaiahu. 2020-05-01. III/V silicon hybrid laser based on a resonant Bragg structure. https://doi.org/10.1364/ao.390522
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