Novel Techniques for Silicon Doping Profiling (U)

Friedman, Caitlin Rochford; Montague, Stephen; Sniegowski, Jeffry Joseph

doi:10.2172/1733248

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Novel Techniques for Silicon Doping Profiling (U)

Friedman, Caitlin Rochford·Montague, Stephen·Sniegowski, Jeffry Joseph

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Abstract

The purpose of this one-year LDRD was to investigate the use of the helium ion microscope (HeIM) for imaging dopant profiles in silicon relevant to integrated circuit technologies. HeIM is a new technology that offers improved spatial resolution over scanning electron microscopy and different beam-solid interaction physics which leads to unique contrast mechanisms. Two parallel thrusts were pursued: 1) traditional imaging via the secondary electron signal and 2) a novel topographical approach. To obtain the experimental details and results, please refer to the classified report from the project manager, Ed Cole, or the Cyber IA lead, Justin Ford.

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Friedman, Caitlin Rochford, Montague, Stephen, Sniegowski, Jeffry Joseph. 2016-09-01. Novel Techniques for Silicon Doping Profiling (U). https://doi.org/10.2172/1733248

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