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DOE OSTI · 1760644

Mapping valence electron distributions with multipole density formalism using 4D-STEM

Wu, Lijun·Meng, Qingping·Zhu, Yimei
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Abstract

Recent advancement in aberration correction and detector technology opened a door to various applications using 4D-STEM, which yields a diffraction pattern for each scanning position within a crystal unit-cell in scanning transmission electron microscopy (STEM) and generates incredible amounts of data in momentum space. Currently 4D-STEM analysis relies on the center-of-mass of the diffraction patterns in electric field and charge density mapping. It only derives the total projected charge density and is limited to phase objects, e.g. extremely thin samples. Here, we propose a new analytical method to accurately map aspherical valence electron distributions with atom-centered multipolar functions formalism using the whole 4D-STEM dataset. We demonstrate that, with the full dynamical calculations for various sample thicknesses, the method is sensitive not only to the miniscule charge transfer, but also to the atomic site symmetry and aspherical electron orbitals. The process of the refinement is much more robust and reliable than quantitative convergent beam electron diffraction.

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4D-STEM75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITYAberration correctionQuantitative electron diffractionValence electrons mapping

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Wu, Lijun, Meng, Qingping, Zhu, Yimei. 2020-12-01. Mapping valence electron distributions with multipole density formalism using 4D-STEM. https://doi.org/10.1016/j.ultramic.2020.113095

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