DOE OSTI · 1811360
32 Gbps heterogeneously integrated quantum dot waveguide avalanche photodiodes on silicon
Abstract
We report a heterogeneous GaAs-based quantum dot (QD) avalanche photodiode (APD) on silicon with an ultralow dark current of 10 pA at − <#comment/> 1 V , 3 dB bandwidth of 20 GHz and record gain-bandwidth product (GBP) of 585 GHz. Furthermore, open eye diagrams up to 32 Gb/s are demonstrated at 1310 nm. The k-factor has been measured for these devices to be as low as 0.14. A polarization dependence on gain and bandwidth has been observed and investigated. This shows the potential to integrate a high-speed receiver in a wavelength division multiplexing (WDM) system on a QD-based silicon photonics platform.
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Tossoun, Bassem, Kurczveil, Geza, Srinivasan, Sudharsanan, Descos, Antoine, Liang, Di (ORCID:0000000313660115), Beausoleil, Raymond G.. 2021-08-02. 32 Gbps heterogeneously integrated quantum dot waveguide avalanche photodiodes on silicon. https://doi.org/10.1364/ol.433654
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