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DOE OSTI · 1826675

32.9% Efficient Tandem Solar Cell with Strain-Balanced GaInAs/GaAsP Quantum Wells

Abstract

We demonstrate single and dual junction solar cells with up to 80 strain-balanced GaInAs/GaAsP quantum wells (QWs), in order to extend the range of photon absorption. The net average stress in the quantum well layers is =12 MPa, despite coherent stresses in the individual layers that are 35-70 times greater. The GaAs-QW cell has a certified efficiency of (27.2 ± 0.2)% at one-sun; the GaInP/GaAs-QW tandem has a certified record one-sun efficiency of (32.9 ± 0.5)%. We will discuss the architecture of the devices, the physics behind the high performance, and pathways to further improvement.

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BibTeXRIS

Steiner, Myles A. (ORCID:0000000316439766), France, Ryan M. (ORCID:0000000220404809), Buencuerpo, Jeronimo, Geisz, John F. (ORCID:000000034818653X), Nielsen, Michael P., Pusch, Andreas, Olavarria, Waldo J., Young, Michelle, Ekins-Daukes, Nicholas J.. 2021-08-26. 32.9% Efficient Tandem Solar Cell with Strain-Balanced GaInAs/GaAsP Quantum Wells. https://doi.org/10.1109/pvsc43889.2021.9518819

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