DOE OSTI · 1884861
Theoretical simulation and experimental verification of the competition between different recombination channels in GaN semiconductors
Abstract
We simulate the time-resolved decay process of the yellow band in GaN based on the first principles, and the simulated decay lifetimes are confirmed in our experiments.
Keep this discovery
Explore connections, maps & timelines
Zhang, Hai-Shan, Shi, Lin, Liu, Zheng-Hui, Xu, Geng-Zhao, Song, Wen-Tao, Wang, Ya-Kun, Xu, Zhong-Jie, Yang, Xiao-Bao, Zhao, Yu-Jun, Yang, Xue-Lin, Shen, Bo, Wang, Lin-Wang, Xu, Ke. 2022-09-22. Theoretical simulation and experimental verification of the competition between different recombination channels in GaN semiconductors. https://doi.org/10.1039/d2tc02164a
Cite the original work for its findings. Save a collection to share your selection of sources.