DOE OSTI · 1976356
Fast Exciton Diffusion in Monolayer PtSe2
Abstract
Recently, 2D noble metal dichalcogenides have drawn considerable attention due to their thickness-tunable electronic and optical properties. However, the dynamical properties of photocarriers in these materials are less studied. In this report photocarrier dynamics in monolayer and bilayer PtSe 2 samples prepared by chemical vapor deposition are studied by transient absorption microscopy. Spatially and temporally resolved differential reflectance measurements yield room-temperature exciton lifetimes of 25 and 50 ps for monolayer and bilayer samples, respectively. The exciton diffusion coefficient in monolayer PtSe 2 is found to be as large as 48 cm 2 s -1 . This value is higher than exciton diffusion coefficients of most known monolayer semiconductors. The deduced exciton mobility is close to the theoretical limit of charge carrier mobility of monolayer PtSe 2 . The superior exciton transport property is unique to monolayers, as the exciton diffusion coefficient drops to 6.7 cm 2 s -1 in bilayers PtSe 2 . The novel exciton transport properties, along with its high air stability, make monolayer PtSe 2 an attractive material for ultrathin excitonic devices. These results provide insights on the exciton dynamic properties of 2D PtSe 2 and help develop fundamental understanding on the performance of various optoelectronic devices based on 2D PtSe 2 . .
Explore related subjects
Keep this discovery
Explore connections, maps & timelines
Wang, Pengzhi, He, Dawei, Wang, Yongsheng, Zhang, Xiaoxian, He, Jiaqi, Zhao, Hui. 2022-04-24. Fast Exciton Diffusion in Monolayer PtSe2. https://doi.org/10.1002/lpor.202100594
Cite the original work for its findings. Save a collection to share your selection of sources.