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DOE OSTI · 1982812

Layer-Dependent Pressure Effect on the Electronic Structure of 2D Black Phosphorus

Huang, Shenyang·Lu, Yang·Wang, Fanjie·Lei, Yuchen·Song, Chaoyu·Zhang, Jiasheng·Xing, Qiaoxia·Wang, Chong·Xie, Yuangang·Mu, Lei·Zhang, Guowei·Yan, Hao·Chen, Bin·Yan, Hugen
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Abstract

Through infrared spectroscopy, we systematically study the pressure effect on electronic structures of few-layer black phosphorus (BP) with layer number ranging from 2 to 13. We reveal that the pressure-induced shift of optical transitions exhibits strong layer dependence. In sharp contrast to the bulk counterpart which undergoes a semiconductor to semimetal transition under ~1.8 GPa, the band gap of 2 L increases with increasing pressure until beyond 2 GPa. Meanwhile, for a sample with a given layer number, the pressure-induced shift also differs for transitions with different indices. Through the tight-binding model in conjunction with a Morse potential for the interlayer coupling, this layer- and transition-index-dependent pressure effect can be fully accounted. Our study paves a way for versatile van der Waals engineering of two-dimensional BP.

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2-dimensional systems75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITYPhysicsRaman spectroscopyelectronic structureinfrared spectroscopypressure effectstight-binding model

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Huang, Shenyang, Lu, Yang, Wang, Fanjie, Lei, Yuchen, Song, Chaoyu, Zhang, Jiasheng, Xing, Qiaoxia, Wang, Chong, Xie, Yuangang, Mu, Lei, Zhang, Guowei, Yan, Hao, Chen, Bin, Yan, Hugen. 2021-10-26. Layer-Dependent Pressure Effect on the Electronic Structure of 2D Black Phosphorus. https://doi.org/10.1103/physrevlett.127.186401

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