DOE OSTI · 1986929
Tunnel junctions for multijunction solar cells
Abstract
Tunnel junctions for multijunction solar cells are provided. According to an aspect of the invention, a tunnel junction includes a first layer including p-type AlGaAs, a second layer including n-type GaAs, wherein the second layer is a quantum well, and a third layer including n-type AlGaAs or n-type lattice matched AlGaInP. The quantum well can be GaAs or AlxGaAs with x being more than about 40%, and lattice matched GaInAsNSb in the Eg range of from about 0.8 to about 1.4 eV.
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Jain, Nikhil, Steiner, Myles Aaron, Geisz, John Franz, Perl, Emmett Edward, France, Ryan Matthew. 2022-12-13. Tunnel junctions for multijunction solar cells. https://www.osti.gov/biblio/1986929
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