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DOE OSTI · 2320325

Doped semiconductor devices for sub-MeV dark matter detection

Du, Peizhi·Egaña-Ugrinovic, Daniel (ORCID:0000000326809070)·Essig, Rouven·Sholapurkar, Mukul
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Abstract

Dopant atoms in semiconductors can be ionized with ∼ 10 meV energy depositions, allowing for the design of low-threshold detectors. We propose using doped semiconductor targets to search for sub-MeV dark matter scattering or sub-eV dark matter absorption on electrons. Currently unconstrained cross sections could be tested with a 1 g-day exposure in a doped detector with backgrounds at the level of existing pure semiconductor detectors, but improvements would be needed to probe the freeze-in target. We discuss the corresponding technological requirements and lay out a possible detector design. Published by the American Physical Society 2024

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Du, Peizhi, Egaña-Ugrinovic, Daniel (ORCID:0000000326809070), Essig, Rouven, Sholapurkar, Mukul. 2024-03-07. Doped semiconductor devices for sub-MeV dark matter detection. https://doi.org/10.1103/physrevd.109.055009

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