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DOE OSTI · 2425545

Neutral Silicon Vacancy Centers in Undoped Diamond via Surface Control

Zhang, Zi-Huai·Zuber, Josh A.·Rodgers, Lila V. H.·Gui, Xin·Stevenson, Paul·Li, Minghao·Batzer, Marietta·Grimau Puigibert, Marcel li·Shields, Brendan J.·Edmonds, Andrew M.·Palmer, Nicola·Markham, Matthew L.·Cava, Robert J.·Maletinsky, Patrick·de Leon, Nathalie P.
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Abstract

Neutral silicon vacancy centers (SiV 0 ) in diamond are promising candidates for quantum applications; however, stabilizing SiV 0 requires high-purity, boron-doped diamond, which is not a readily available material. Here, we demonstrate an alternative approach via chemical control of the diamond surface. We use low-damage chemical processing and annealing in a hydrogen environment to realize reversible and highly stable charge state tuning in undoped diamond. The resulting SiV 0 centers display optically detected magnetic resonance and bulklike optical properties. Controlling the charge state tuning via surface termination offers a route for scalable technologies based on SiV 0 centers, as well as charge state engineering of other defects.

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74 ATOMIC AND MOLECULAR PHYSICSColor centersDiamondNitrogen vacancy centers in diamondOptically detected magnetic resonancePhysicsSurface statesSurfaces

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Zhang, Zi-Huai, Zuber, Josh A., Rodgers, Lila V. H., Gui, Xin, Stevenson, Paul, Li, Minghao, Batzer, Marietta, Grimau Puigibert, Marcel li, Shields, Brendan J., Edmonds, Andrew M., Palmer, Nicola, Markham, Matthew L., Cava, Robert J., Maletinsky, Patrick, de Leon, Nathalie P.. 2023-04-21. Neutral Silicon Vacancy Centers in Undoped Diamond via Surface Control. https://doi.org/10.1103/physrevlett.130.166902

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