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DOE OSTI · 2477133

Modeling a Strain and Piezo Potentials in an InAs/GaAs Quantum Dot

Filikhin, Igor·Vlahovic, Branislav·Zatezalo, Tanja·Karoui, Abdennaceur·Oxley, Jimmie
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Abstract

We investigated the single-electron spectrum of an InAs/GaAs quantum dot (QD) using an effective potential model developed in previous studies. Our objective was to explore the limits of applicability of this model. We conducted numerical simulations, introducing a piezoelectric potential as a perturbation to the effective potential. The profile of this additional potential was derived from theoretical numerical studies presented in the literature. We analyzed the impact of variations in this profile within the framework of the perturbation theory. Our findings indicate that within a variation range of 25%, the effective potential model remains applicable.

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42 ENGINEERING77 NANOSCIENCE AND NANOTECHNOLOGYeffective model for InAs/GaAs heterostructureseffective model for InAs/GaAs heterostructures.piezoelectric potentialsemiconductor quantum dotsstrain potential

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Filikhin, Igor, Vlahovic, Branislav, Zatezalo, Tanja, Karoui, Abdennaceur, Oxley, Jimmie. 2024-11-13. Modeling a Strain and Piezo Potentials in an InAs/GaAs Quantum Dot. https://doi.org/10.3390/pr12112524

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