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DOE OSTI · 2570123

Electronic and Geometric Contributors to Hydrogen Binding in Uranium Oxide Grain Boundaries

Abstract

Hydrogen induced corrosion of uranium, which leads to the formation of toxic and pyrophoric UH 3 , raises significant safety concerns for long-term storage of nuclear materials. Previous work suggests hydrogen diffuses through the grain boundaries (GBs) of the passivating oxide layer to initiate hydriding reactions. However, the atomistic mechanisms underlying this phenomenon and the structural factors that control its initiation are not well understood. To address this knowledge gap, here we use a high-throughput density functional theory (DFT) workflow to investigate the adsorption of H and H 2 in the defective bulk UO 2 . Specifically, we have exhaustively investigated the adsorption of H (107 sites) and H 2 (26 sites) in three different coincident site lattice (CSL) GBs: Σ3, Σ5, and Σ9. Compared to the binding energies in pristine UO 2 , we observe significantly stronger hydrogen adsorption at these GB sites. Interestingly, we find that the trends in H and H 2 adsorption vary considerably across the three GB models. In particular, while a small number of sites in Σ5 and Σ9 show exothermic adsorption of H and H 2 , respectively, no such sites are found in Σ3. These results provide fundamental atomistic insights that could guide the development of future corrosion mitigation strategies for the storage of nuclear materials.

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BibTeXRIS

Goel, Rajat [Univ. of California, Davis, CA (United States)], Goldman, Nir [Univ. of California, Davis, CA (United States); Lawrence Livermore National Laboratory (LLNL), Livermore, CA (United States)] (ORCID:0000000330522128), Kulkarni, Ambarish R. [Univ. of California, Davis, CA (United States)] (ORCID:0000000198348264). 2025-06-04. Electronic and Geometric Contributors to Hydrogen Binding in Uranium Oxide Grain Boundaries. https://doi.org/10.1021/acs.jpcc.5c01120

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