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DOE OSTI Β· 3013906

High-performance nanodevices based on WGe 2⁒ N 4 monolayer

Li, Jiajun [Henan Normal University, Xinxiang (China)]Β·Fan, Xiaozheng [Henan Normal University, Xinxiang (China)]Β·Shiri, Mehrdad [University of Miami, Coral Gables, FL (United States)]Β·Wang, Kun [University of Miami, Coral Gables, FL (United States)] (ORCID:000000024907310X)Β·Ma, Chunlan [Suzhou University of Science and Technology (China)]Β·Gong, Shijing [East China Normal University, Shanghai (China)]Β·Zhao, Chuanxi [Jinan University, Guangzhou (China)]Β·Wang, Junshuai [Henan Normal University, Xinxiang (China)]Β·Dong, Xiao [Henan Normal University, Xinxiang (China)]Β·Wang, Tianxing [Henan Normal University, Xinxiang (China)] (ORCID:0000000336598801)Β·Xu, Guoliang [Henan Normal University, Xinxiang (China)] (ORCID:000000033701699X)Β·An, Yipeng [Henan Normal University, Xinxiang (China)] (ORCID:0000000154774659)
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Abstract

Two-dimensional (2D) 𝑀⁒𝐴 2 ⁒𝑍 4 -family monolayers (MLs) have emerged as promising semiconductors due to their element tunability and rich electronic and optoelectronic properties. In this work, using first-principles calculations, we investigate the electronic, mechanical, transport, and optoelectronic properties of WGe 2⁒ N 4 ML with a small indirect bandgap. Various nanodevices based on WGe 2 ⁒N 4 ML are studied, including pn-junction diodes, pin-junction field-effect transistors (FETs), and phototransistors. The present results reveal that the WGe 2⁒ N 4 ML exhibits high rigidity, thermal stability, and remarkable light absorption. These nanodevices demonstrate excellent performance: (1) the pn-junction diode shows a high rectification ratio and a near-Shockley-limit ideality factor, (2) the pin-junction FET exhibits significant gate voltage modulation capability with subthreshold swing as low as 71 mV/dec (close to the theoretical limit calculated based on the Boltzmann distribution), and (3) the phototransistor displays strong optoelectronic responses in the visible and ultraviolet regions. Furthermore, these findings establish WGe 2 ⁒N 4 ML as a versatile platform for developing high-performance, multifunctional nanoelectronic and optoelectronic devices, significantly expanding the application potential of 𝑀⁒𝐴 2⁒ 𝑍 4 -family materials.

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2-dimensional systemsWGe2⁒N4 monolayerdensity functional calculationsdeviceselectronic structurenanoelectronic devicesnonequilibrium Green's functionoptoelectronic devicesoptoelectronicsquantum transportsemiconductor compounds

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Li, Jiajun [Henan Normal University, Xinxiang (China)], Fan, Xiaozheng [Henan Normal University, Xinxiang (China)], Shiri, Mehrdad [University of Miami, Coral Gables, FL (United States)], Wang, Kun [University of Miami, Coral Gables, FL (United States)] (ORCID:000000024907310X), Ma, Chunlan [Suzhou University of Science and Technology (China)], Gong, Shijing [East China Normal University, Shanghai (China)], Zhao, Chuanxi [Jinan University, Guangzhou (China)], Wang, Junshuai [Henan Normal University, Xinxiang (China)], Dong, Xiao [Henan Normal University, Xinxiang (China)], Wang, Tianxing [Henan Normal University, Xinxiang (China)] (ORCID:0000000336598801), Xu, Guoliang [Henan Normal University, Xinxiang (China)] (ORCID:000000033701699X), An, Yipeng [Henan Normal University, Xinxiang (China)] (ORCID:0000000154774659). 2026-01-13. High-performance nanodevices based on WGe 2⁒ N 4 monolayer. https://doi.org/10.1103/74cd-586j

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