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DOE OSTI · 3018876

Towards radiation hard (Hf, Zr)O2 based Ferroelectric Tunnel Junctions nonvolatile memory

Abstract

presentation on LDRD work on ferroelectric memory

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BibTeXRIS

Henry, Michael David [Sandia National Laboratories (SNL-NM), Albuquerque, NM (United States)] (ORCID:0000000252010644), Stoltzfus, David Jay [Sandia National Laboratories (SNL-NM), Albuquerque, NM (United States)], Tharpe, Troy Ryan [Sandia National Laboratories (SNL-NM), Albuquerque, NM (United States)] (ORCID:0000000178355651), Jaszewski, Samantha Tomiko [Sandia National Laboratories (SNL-NM), Albuquerque, NM (United States)] (ORCID:0000000249581219), Young, Travis Ryan [Sandia National Laboratories (SNL-NM), Albuquerque, NM (United States)] (ORCID:0009000606276720), Esteves, Giovanni [Sandia National Laboratories (SNL-NM), Albuquerque, NM (United States)] (ORCID:0000000324317136), Ihlefeld, Jon [University of Virginia, Materials Science and Engineering Department], Lenox, Megan [University of Virginia, Materials Science and Engineering Department]. 2025-02-01. Towards radiation hard (Hf, Zr)O2 based Ferroelectric Tunnel Junctions nonvolatile memory. https://doi.org/10.2172/3018876

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