Understanding and Controlling Vanadium Doping and Sulfur Vacancy Behavior in Two-Dimensional Semiconductors: Toward Predictive Design

Mathela, Shreya [Pennsylvania State Univ., University Park, PA (United States)] (ORCID:0000000290178149); Yu, Zhuohang [Pennsylvania State Univ., University Park, PA (United States)] (ORCID:0000000315931054); Ward, Zachary D. [Rensselaer Polytechnic Inst., Troy, NY (United States)]; Dihingia, Nikalabh [Pennsylvania State Univ., University Park, PA (United States)]; Sredenschek, Alex [Pennsylvania State Univ., University Park, PA (United States)] (ORCID:0009000411878107); Sanchez, David [Pennsylvania State Univ., University Park, PA (United States)]; Munson, Kyle T. [Pennsylvania State Univ., University Park, PA (United States)] (ORCID:0009000160998349); Houser, Elizabeth [Pennsylvania State Univ., University Park, PA (United States)]; Dimitrov, Edgar [Pennsylvania State Univ., University Park, PA (United States)]; Jain, Arpit [Pennsylvania State Univ., University Park, PA (United States)]; Reifsnyder Hickey, Danielle [Pennsylvania State Univ., University Park, PA (United States)] (ORCID:0000000289621473); Terrones, Humberto [Rensselaer Polytechnic Inst., Troy, NY (United States)] (ORCID:0000000305150721); Terrones, Mauricio [Pennsylvania State Univ., University Park, PA (United States)] (ORCID:0000000300102851); Asbury, John B. [Pennsylvania State Univ., University Park, PA (United States)] (ORCID:0000000236417276)

doi:10.1021/acsnano.5c10856

DOE OSTI · 3024342

Understanding and Controlling Vanadium Doping and Sulfur Vacancy Behavior in Two-Dimensional Semiconductors: Toward Predictive Design

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Abstract

Ultrafast PL microscopy of doping and defects in transition metal dichalcogenides.

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37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CHEMISTRY Defects Doping Photoluminescence STEM imaging Transition-metal dichalcogenides

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Mathela, Shreya [Pennsylvania State Univ., University Park, PA (United States)] (ORCID:0000000290178149), Yu, Zhuohang [Pennsylvania State Univ., University Park, PA (United States)] (ORCID:0000000315931054), Ward, Zachary D. [Rensselaer Polytechnic Inst., Troy, NY (United States)], Dihingia, Nikalabh [Pennsylvania State Univ., University Park, PA (United States)], Sredenschek, Alex [Pennsylvania State Univ., University Park, PA (United States)] (ORCID:0009000411878107), Sanchez, David [Pennsylvania State Univ., University Park, PA (United States)], Munson, Kyle T. [Pennsylvania State Univ., University Park, PA (United States)] (ORCID:0009000160998349), Houser, Elizabeth [Pennsylvania State Univ., University Park, PA (United States)], Dimitrov, Edgar [Pennsylvania State Univ., University Park, PA (United States)], Jain, Arpit [Pennsylvania State Univ., University Park, PA (United States)], Reifsnyder Hickey, Danielle [Pennsylvania State Univ., University Park, PA (United States)] (ORCID:0000000289621473), Terrones, Humberto [Rensselaer Polytechnic Inst., Troy, NY (United States)] (ORCID:0000000305150721), Terrones, Mauricio [Pennsylvania State Univ., University Park, PA (United States)] (ORCID:0000000300102851), Asbury, John B. [Pennsylvania State Univ., University Park, PA (United States)] (ORCID:0000000236417276). 2025-09-19. Understanding and Controlling Vanadium Doping and Sulfur Vacancy Behavior in Two-Dimensional Semiconductors: Toward Predictive Design. https://doi.org/10.1021/acsnano.5c10856

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