DOE OSTI · 3377736
Physical Modeling and Design of a Nonvolatile Optically Gated High‐Power Diamond Transistor
Abstract
In this work, we present the theory and modeling framework of a diamond optically gated junction field‐effect transistor (DOGFET). The device utilizes nitrogen substitutional centers in type‐1b diamond to optically modulate a p‐ boron doped diamond channel. Using sub‐gap lasers with intensities as low as 100 W/cm 2 , electrons are optically excited from substitutional nitrogen sites to the conduction band of the diamond substrate, thus enabling the optical gate to exercise control on modulating the space‐charge region at the junction and therefore the channel conductivity. We show that the device can deliver a current of 7 μA/μm, or equivalently 1750 A/cm 2 , while switching at a frequency greater than 100 kHz, in a form factor of 5 μm 2 . The breakdown voltage is found to be greater than 1850 V, with a breakdown field strength of ~13 MV/cm. Moreover, the device supports nonvolatile operation with a “memory effect” enabling single transistor state retention. The presented simulation framework provides a physically grounded insight into the limits and opportunities of optoelectronic diamond systems.
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Nandi, Soumak [Univ. of Illinois at Urbana-Champaign, IL (United States)] (ORCID:0009000703804409), White, Ethan [Univ. of Illinois at Urbana-Champaign, IL (United States)], Shao, Qinghui [Lawrence Livermore National Laboratory (LLNL), Livermore, CA (United States)] (ORCID:0000000219949553), Chatterjee, Bikramjit [Lawrence Livermore National Laboratory (LLNL), Livermore, CA (United States)] (ORCID:0000000168891987), Frye, Clint D. [Lawrence Livermore National Laboratory (LLNL), Livermore, CA (United States)] (ORCID:0000000263708167), Evans, Dylan M. [Lawrence Livermore National Laboratory (LLNL), Livermore, CA (United States)] (ORCID:000900064754500X), Malakoutian, Mohamadali [Stanford Univ., CA (United States)] (ORCID:0000000257600408), Chowdhury, Srabanti [Stanford Univ., CA (United States)] (ORCID:0000000183670461), Voss, Lars [Lawrence Livermore National Laboratory (LLNL), Livermore, CA (United States)] (ORCID:0000000263498219), Rakheja, Shaloo [Univ. of Illinois at Urbana-Champaign, IL (United States)] (ORCID:000000017501275X). 2026-06-09. Physical Modeling and Design of a Nonvolatile Optically Gated High‐Power Diamond Transistor. https://doi.org/10.1002/pssa.70395
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