DOE OSTI · 3391614
Design and fabrication of ion traps for low RF power dissipation
Abstract
Large surface-electrode ion traps with multiple trapping regions and junctions are a natural approach to scaling trapped ion quantum computers, supporting the connectivity and ion counts necessary for complex quantum algorithms. However, a major hurdle in this scaling is on-chip power dissipation from the applied RF voltage, which increases at a rate between linear and cubic relative to trap size, depending on whether the losses are dielectric or Ohmic. Here, we present two versions of a trap with features designed to reduce both types of RF power dissipation. The first variant contains a raised RF electrode that increases the electrode–ground distance to reduce capacitance. Different DC voltage sources are demonstrated on this trap to show that technical noise before the filter remains the dominant source of voltage noise and therefore motional heating. The second variant additionally includes a method for removing dielectric from beneath the RF electrode to further reduce dielectric losses. These traps were demonstrated at room temperature with 40 Ca + ions. In conclusion, the similar heating rates and heating rate axial frequency dependencies between 2.4 and 3.0 MHz illustrate that this dielectric modification is not detrimental to trap performance.
Keep this discovery
Sterk, J. D. [Sandia National Laboratories (SNL-NM), Albuquerque, NM (United States)] (ORCID:0000000280396396), Blain, M. G. [Sandia National Laboratories (SNL-NM), Albuquerque, NM (United States)] (ORCID:0000000209832992), Delaney, M. [Sandia National Laboratories (SNL-NM), Albuquerque, NM (United States)] (ORCID:0009000226465773), Haltli, R. [Sandia National Laboratories (SNL-NM), Albuquerque, NM (United States)] (ORCID:0000000338075078), Heller, E. [Sandia National Laboratories (SNL-NM), Albuquerque, NM (United States); Quantinuum, Broomfield, CO (United States)], Holterhoff, A. L. [Sandia National Laboratories (SNL-NM), Albuquerque, NM (United States)] (ORCID:0009000106165485), Jennings, T. [Sandia National Laboratories (SNL-NM), Albuquerque, NM (United States)], Jimenez, N. [Sandia National Laboratories (SNL-NM), Albuquerque, NM (United States)] (ORCID:0000000216546396), Katz, O. [Cornell University, Ithaca, NY (United States)] (ORCID:0000000176341993), Kozhanov, A. [Duke University, Durham, NC (United States)] (ORCID:0000000313241332), Meinelt, Z. [Sandia National Laboratories (SNL-NM), Albuquerque, NM (United States)] (ORCID:0009000471119129), Morrison, T. D. [Sandia National Laboratories (SNL-NM), Albuquerque, NM (United States)] (ORCID:0009000856164115), Ou, E. [Sandia National Laboratories (SNL-NM), Albuquerque, NM (United States)] (ORCID:0000000201816955), Van Der Wall, J. [Sandia National Laboratories (SNL-NM), Albuquerque, NM (United States)] (ORCID:0009000508788124), Noel, C. [Duke University, Durham, NC (United States)] (ORCID:0000000229772747), Stick, D. [Sandia National Laboratories (SNL-NM), Albuquerque, NM (United States); IonQ, College Park, MD (United States)] (ORCID:0000000268027539). 2026-06-08. Design and fabrication of ion traps for low RF power dissipation. https://doi.org/10.1116/5.0332336
Cite the original work for its findings. Save a collection to share your selection of sources.