Design and Modeling of the Charge Readout of a SiMOS Quantum Dot with a Single Electron Transistor and CryoCMOS

Quinn, Adam [Fermilab] (ORCID:0009000605056371); England, Troy [Fermilab] (ORCID:0000000154405255); Li, Andrew [Fermilab] (ORCID:0000000345423739); Nandita, Sharmila Mustari [Fermilab]

DOE OSTI · 3674508

Design and Modeling of the Charge Readout of a SiMOS Quantum Dot with a Single Electron Transistor and CryoCMOS

Quinn, Adam [Fermilab] (ORCID:0009000605056371)·England, Troy [Fermilab] (ORCID:0000000154405255)·Li, Andrew [Fermilab] (ORCID:0000000345423739)·Nandita, Sharmila Mustari [Fermilab]

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Abstract

Single electron spin qubits trapped in SiMOS quantum dots are a promising technology for scaling to thousand- or million-qubit systems due to their compatibility with mature CMOS manufacturing processes. A readout system that combines a single electron transistor with a custom cryogenic CMOS amplification and digitization chain offers key advantages by avoiding the use of bulky RF components or room-temperature interconnects. We present design techniques and simulation results for an optimized qubit-SET cryoCMOS interface, culminating in the design of the QNDR1 ASIC, the first cryogenic readout ASIC designed under the Quandarum project, which targets the development of a many-channel spin qubit based detector for use in high energy physics.

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BibTeX RIS

Quinn, Adam [Fermilab] (ORCID:0009000605056371), England, Troy [Fermilab] (ORCID:0000000154405255), Li, Andrew [Fermilab] (ORCID:0000000345423739), Nandita, Sharmila Mustari [Fermilab]. 2026-08-28. Design and Modeling of the Charge Readout of a SiMOS Quantum Dot with a Single Electron Transistor and CryoCMOS. https://www.osti.gov/biblio/3674508

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