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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 181 records · Page 10
All sourcesNASA NTRSDOE OSTI
NASA NTRSDate not supplied

Processing Choices for Achieving Long Term IC Operation at 500 °C

The prospects for beneficial infusion of integrated circuits (ICs) into previously inaccessible extreme-temperature application environments has increased with recent NASA Glenn demonstrations of 4H-SiC Junction Field Effect Transistor & Resistor (JFET-R) chips functioning for over a year at 500 °C in air ambient. This paper focuses on fabrication process choices believed key to demonstrated 500 °C durability that must be considered when porting this uniquely durable IC capability into commercial foundry manufacturing.

silicon carbide↗
NASA NTRS2004

Silicon Carbide Diodes Performance Characterization at High Temperatures

NASA Glenn Research center's Electrical Systems Development branch is working to demonstrate and test the advantages of Silicon Carbide (SiC) devices in actual power electronics applications. The first step in this pursuit is to obtain commercially available SiC Schottky diodes and to individually test them under both static and dynamic conditions, and then compare them with current state of the art silicon Schottky and ultra fast p-n diodes of similar voltage and current ratings. This presentation covers the results of electrical tests performed at NASA Glenn. Steady state forward and reverse current-volt (I-V) curves were generated for each device to compare performance and to measure their forward voltage drop at rated current, as well as the reverse leakage current at rated voltage. In addition, the devices were individually connected as freewheeling diodes in a Buck (step down) DC to DC converter to test their reverse recovery characteristics and compare their transient performance in a typical converter application. Both static and transient characterization tests were performed at temperatures ranging from 25 C to 300 C, in order to test and demonstrate the advantages of SiC over Silicon at high temperatures.

Lebron-Velilla, Ramon C.↗
NASA NTRS1986

Advanced dendritic web growth development and development of single-crystal silicon dendritic ribbon and high-efficiency solar cell program

Efforts to demonstrate that the dendritic web technology is ready for commercial use by the end of 1986 continues. A commercial readiness goal involves improvements to crystal growth furnace throughput to demonstrate an area growth rate of greater than 15 sq cm/min while simultaneously growing 10 meters or more of ribbon under conditions of continuous melt replenishment. Continuous means that the silicon melt is being replenished at the same rate that it is being consumed by ribbon growth so that the melt level remains constant. Efforts continue on computer thermal modeling required to define high speed, low stress, continuous growth configurations; the study of convective effects in the molten silicon and growth furnace cover gas; on furnace component modifications; on web quality assessments; and on experimental growth activities.

Duncan, C. S.↗
NASA NTRS2009

Assessment of Operation of EMK21 MEMS Silicon Oscillator Over Wide Temperature Range

Electronic control systems, data-acquisition instrumentation, and microprocessors require accurate timing signals for proper operation. Traditionally, ceramic resonators and crystal oscillators provided this clock function for the majority of these systems. Over the last few years, MEMS (Micro-Electro-Mechanical Systems) resonator-based oscillators began to surface as commercial-off-the-shelf (COTS) parts by a few companies. These quartz-free, miniature silicon devices could easily replace the traditional crystal oscillators in providing the timing/clock function for many digital and analog circuits. They are reported to provide stable output frequency, offer great tolerance to shock and vibration, and are immune to electro-static discharge [ 1-2]. In addition, they are encapsulated in compact lead-free packages and cover a wide frequency range (1 MHz to 125 MHz). The small size of the MEMS oscillators along with their thermal stability make them ideal candidates for use in space exploration missions. Limited data, however, exist on the performance and reliability of these devices under operation in applications where extreme temperatures or thermal cycling swings, which are typical of space missions, are encountered. This report presents the results of the work obtained on the evaluation of an Ecliptek Corporation MEMS silicon oscillator chip under extreme temperatures.

Patterson, Richard L.↗
NASA NTRS2000

Shipping Monitor

Through a SBIR contract between Kennedy Space Center and Silicon Designs, came the tri-axial data acquisition system, known commercially as the G-Logger. It is a portable, self-contained device that stores and analyzes shock, vibration, and temperature data during payload transport. It is sealed for protection from the weather and can be left unattended for up to three weeks as it collects data. It can easily be linked with any desktop or laptop computer in order to download the collected data. It serves uses in the automotive, shipping, aerospace, and machining industries.

Source record↗
NASA NTRS1993

Microchemical analysis of the SCS-6 silicon carbide fiber

A detailed quantitative study of the microstructural variation of chemical composition of chemically vapor-deposited commercial SiC SCS-6 fiber is presented. Chemical etching and various electron-optical techniques including SEM, TEM, scanning Auger microscopy, AES, and parallel electron energy loss spectroscopy are used to analyze the chemical composition of the as-received fiber. In addition, some results on stereology of the high-temperature annealed fiber are presented. The results show that the carbon-to-silicon atom ratio in the SiC layers decreases in a stepwise fashion from about 3:2 to about 1:1 in going from the innermost layer to the outermost layer.

Ning, Xian-Jie↗
NASA NTRS1985

Analysis of stress-strain, fracture, and ductility behavior of aluminum maxtrix composites containing discontinuous silicon carbide reinforcement

Mechanical properties and stress-strain behavior were evaluated for several types of commercially fabricated aluminum matrix composites, containing up to 40 vol pct discontinuous SiC whisker, nodule, or particulate reinforcement. The elastic modulus of the composites was found to be isotropic, to be independent of type of reinforcement, and to be controlled solely by the volume percentage of SiC reinforcement present. The yield/tensile strengths and ductility were controlled primarily by the matrix alloy and temper condition. Type and orientation of reinforcement had some effect on the strengths of composites, but only for those in which the whisker reinforcement was highly oriented. Ductility decreased with increasing reinforcement content; however, the fracture strains observed were higher than those reported in the literature for this type of composite. This increase in fracture strain was probably attributable to cleaner matrix powder, better mixing, and increased mechanical working during fabrication. Comparison of properties with conventional aluminum and titanium structural alloys showed that the properties of the low-cost, lightweight composites demonstrated very good potential for application to aerospace structures.

Mcdanels, D. L.↗
NASA NTRS2000

Temperature Distribution Within a Defect-Free Silicon Carbide Diode Predicted by a Computational Model

Most solid-state electronic devices diodes, transistors, and integrated circuits are based on silicon. Although this material works well for many applications, its properties limit its ability to function under extreme high-temperature or high-power operating conditions. Silicon carbide (SiC), with its desirable physical properties, could someday replace silicon for these types of applications. A major roadblock to realizing this potential is the quality of SiC material that can currently be produced. Semiconductors require very uniform, high-quality material, and commercially available SiC tends to suffer from defects in the crystalline structure that have largely been eliminated in silicon. In some power circuits, these defects can focus energy into an extremely small area, leading to overheating that can damage the device. In an effort to better understand the way that these defects affect the electrical performance and reliability of an SiC device in a power circuit, the NASA Glenn Research Center at Lewis Field began an in-house three-dimensional computational modeling effort. The goal is to predict the temperature distributions within a SiC diode structure subjected to the various transient overvoltage breakdown stresses that occur in power management circuits. A commercial computational fluid dynamics computer program (FLUENT-Fluent, Inc., Lebanon, New Hampshire) was used to build a model of a defect-free SiC diode and generate a computational mesh. A typical breakdown power density was applied over 0.5 msec in a heated layer at the junction between the p-type SiC and n-type SiC, and the temperature distribution throughout the diode was then calculated. The peak temperature extracted from the computational model agreed well (within 6 percent) with previous first-order calculations of the maximum expected temperature at the end of the breakdown pulse. This level of agreement is excellent for a model of this type and indicates that three-dimensional computational modeling can provide useful predictions for this class of problem. The model is now being extended to include the effects of crystal defects. The model will provide unique insights into how high the temperature rises in the vicinity of the defects in a diode at various power densities and pulse durations. This information also will help researchers in understanding and designing SiC devices for safe and reliable operation in high-power circuits.

Kuczmarski, Maria A.↗
NASA NTRS2016

Silicon-Carbide Power MOSFET Performance in High Efficiency Boost Power Processing Unit for Extreme Environments

Silicon-Carbide device technology has generated much interest in recent years. With superior thermal performance, power ratings and potential switching frequencies over its Silicon counterpart, Silicon-Carbide offers a greater possibility for high powered switching applications in extreme environment. In particular, Silicon-Carbide Metal-Oxide- Semiconductor Field-Effect Transistors' (MOSFETs) maturing process technology has produced a plethora of commercially available power dense, low on-state resistance devices capable of switching at high frequencies. A novel hard-switched power processing unit (PPU) is implemented utilizing Silicon-Carbide power devices. Accelerated life data is captured and assessed in conjunction with a damage accumulation model of gate oxide and drain-source junction lifetime to evaluate potential system performance at high temperature environments.

Ikpe, Stanley A.↗
NASA NTRS1993

A broad-band microseismometer for planetary operations

There has recently been renewed interest in the development of instrumentation for making measurements on the surface of Mars. This is due to the Mars Environmental Survey (MESUR) Mission, for which approximately 16 small, long-lived (2-10 years), relatively inexpensive surface stations will be deployed in a planet-wide network. This will allow the investigation of processes (such as seismology and meteorology) which require the simultaneous measurement of phenomena at many widely spaced locations on the surface over a considerable length of time. Due to the large number of vehicles involved, the mass, power, and cost of the payload will be severely constrained. A seismometer has been identified as one of the highest priority instruments in the MESUR straw-man payload. The requirements for an effective seismic experiment on Mars place a number of constraints on any viable sensor design. First, a large number of sensors must be deployed in a long-lived global network in order to be able to locate many events reliably, provide good spatial sampling of the interior, and increase the probability of seismic detection in the event of localized seismicity and/or high attenuation. From a practical standpoint, this means that individual surface stations will necessarily be constrained in terms of cost, mass, and power. Landing and thermal control systems will probably be simple, in order to minimize cost, resulting in large impact accelerations and wide daily and seasonal thermal swings. The level of seismic noise will determine the maximum usable sensitivity for seismometer. Unfortunately, the ambient seismic noise level for Mars is not well known. However lunar seismic noise levels are several orders of magnitude below that of the Earth. Sensitivities on the order of 10(exp -11)g over a bandwidth of .04 to 20 Hz are thought to be necessary to fulfill the science objectives for a seimometer placed on the Martian surface. Silicon micromachined sensor technology offers techniques for the fabrication of monolithic, robust, compact, lower power and mass accelerometers. Conventional micro-machined accelerometers have been developed and are commercially available for high frequency and large acceleration measurements. The new seismometer we are developing incorporates certain principles of conventional silicon micromachined accelerometer technology. However, currently available silicon micromachined sensors offer inadequate sensitivity and bandwidth for the Mars seismometer application. Our implementation of an advanced silicon micromachined seismometer is based on principles recently developed at JPL for high-sensitivity position sensor technology.

Banerdt, W. B.↗
NASA NTRS2006

Single-Event Upset and Scaling Trends in New Generation of the Commercial SOI PowerPC Microprocessors

Single-event upset effects from heavy ions are measured for Motorola silicon-on-insulator (SOI) microprocessor with 90 nm feature sizes. The results are compared with previous results for SOI microprocessors with feature sizes of 130 and 180 nm. The cross section of the 90 nm SOI processors is smaller than results for 130 and 180 nm counterparts, but the threshold is about the same. The scaling of the cross section with reduction of feature size and core voltage for SOI microprocessors is discussed.

silicon on insulator↗
NASA NTRS1973

Compact 20-kiloampere pulse-forming-network capacitor bank

Bank uses commercially available high-energy-density capacitors for energy storage and silicon-controlled rectifiers for switching. Low voltage design employing solid-state switching is utilized in lieu of conventional gas discharge switching.

Posta, S. J.↗
NASA NTRS1972

The evaporation of various lubricant fluids in vacuum.

The weight-loss rate in vacuum of 18 lubricating liquids and greases is reported for temperatures up to 120 C. Eleven types of 'medium-viscosity' (20 to 52 centistokes at 40 C) fluids were studied. In addition, a variety of perfluoro ether liquids having viscosities of 350 to 500 centistokes at 40 C were investigated, as were some commercial greases based on these liquids. The results showed that a methylchlorophenyl silicone, a high-viscosity-index perfluoro ether research fluid, and a polyoctene have suitably low outgassing properties for long-term space applicaitons requiring a medium-viscosity lubricant. Perfluoro ether greases also displayed low outgassing, but batch-to-batch variation was great. Mass spectrometer measurements indicated that the outgassed species were characterized by much lower molecular weights than that expected for the liquids. This suggests that lubricant transfer techniques which rely on evaporation from a reservoir may not be desirable for long-term space applications.

Hamilton, D. B.↗
NASA NTRS2011

Improved Devices for Collecting Sweat for Chemical Analysis

Improved devices have been proposed for collecting sweat for biochemical analysis - especially for determination of the concentration of Ca2+ ions in sweat as a measure of loss of Ca from bones. Unlike commercially available sweat-collection patches used previously in monitoring osteoporosis and in qualitative screening for some drugs, the proposed devices would not allow evaporation of the volatile chemical components (mostly water) of sweat. Moreover, the proposed devices would be designed to enable determination of the volumes of collected sweat. From these volumes and the quantities of Ca(2+) and/or other analytes as determined by other means summarized below, one could determine the concentrations of the analytes in sweat. A device according to the proposal would be flexible and would be worn like a commercial sweat-collection patch. It would be made of molded polydimethylsiloxane (silicone rubber) or other suitable material having properties that, for the purpose of analyzing sweat, are similar to those of glass. The die for molding the silicone rubber would be fabricated by a combination of lithography and electroplating. The die would reproducibly form, in the silicone rubber, a precisely defined number of capillary channels per unit area, each channel having a precisely defined volume. Optionally, electrodes for measuring the Ca(2+) content of the sweat could be incorporated into the device. The volume of sweat collected in the capillary channels of the device would be determined from (1) the amount of light or radio waves of a given wavelength absorbed by the device and (2) the known geometry of the array of capillary channels. Then, in one of two options, centrifugation would be performed to move the sweat from the capillary tubes to the region containing the electrodes, which would be used to measure the Ca(2+) content by a standard technique. In the other option, centrifugation would be performed to remove the sweat from the device to make the sweat available to other analytical instruments for measuring concentrations of substances other than Ca(2+).

Feedback, Daniel L.↗
NASA NTRS2011

Improved Devices for Collecting Sweat for Chemical Analysis

Improved devices have been proposed for collecting sweat for biochemical analysis especially for determination of the concentration of Ca2+ ions in sweat as a measure of loss of Ca from bones. Unlike commercially available sweat-collection patches used previously in monitoring osteoporosis and in qualitative screening for some drugs, the proposed devices would not allow evaporation of the volatile chemical components (mostly water) of sweat. Moreover, the proposed devices would be designed to enable determination of the volumes of collected sweat. From these volumes and the quantities of Ca2+ and/or other analytes as determined by other means summarized below, one could determine the concentrations of the analytes in sweat. A device according to the proposal would be flexible and would be worn like a commercial sweat-collection patch. It would be made of molded polydimethylsiloxane (silicone rubber) or other suitable material having properties that, for the purpose of analyzing sweat, are similar to those of glass. The die for molding the silicone rubber would be fabricated by a combination of lithography and electroplating. The die would reproducibly form, in the silicone rubber, a precisely defined number of capillary channels per unit area, each channel having a precisely defined volume. Optionally, electrodes for measuring the Ca2+ content of the sweat could be incorporated into the device. The volume of sweat collected in the capillary channels of the device would be determined from (1) the amount of light or radio waves of a given wavelength absorbed by the device and (2) the known geometry of the array of capillary channels. Then, in one of two options, centrifugation would be performed to move the sweat from the capillary tubes to the region containing the electrodes, which would be used to measure the Ca2+ content by a standard technique. In the other option, centrifugation would be performed to remove the sweat from the device to make the sweat available to other analytical instruments for measuring concentrations of substances other than Ca2+.

Feeback, Daniel L.↗
NASA NTRS2009

Reconfigurable, Bi-Directional Flexfet Level Shifter for Low-Power, Rad-Hard Integration

Two prototype Reconfigurable, Bi-directional Flexfet Level Shifters (ReBiLS) have been developed, where one version is a stand-alone component designed to interface between external low voltage and high voltage, and the other version is an embedded integrated circuit (IC) for interface between internal low-voltage logic and external high-voltage components. Targeting stand-alone and embedded circuits separately allows optimization for these distinct applications. Both ReBiLS designs use the commercially available 180-nm Flex fet Independently Double-Gated (IDG) SOI CMOS (silicon on insulator, complementary metal oxide semiconductor) technology. Embedded ReBiLS circuits were integrated with a Reed-Solomon (RS) encoder using CMOS Ultra-Low-Power Radiation Tolerant (CULPRiT) double-gated digital logic circuits. The scope of the project includes: creation of a new high-voltage process, development of ReBiLS circuit designs, and adjustment of the designs to maximize performance through simulation, layout, and manufacture of prototypes. The primary technical objectives were to develop a high-voltage, thick oxide option for the 180-nm Flexfet process, and to develop a stand-alone ReBiLS IC with two 8-channel I/O busses, 1.8 2.5 I/O on the low-voltage pins, 5.0-V-tolerant input and 3.3-V output I/O on the high-voltage pins, and 100-MHz minimum operation with 10-pF external loads. Another objective was to develop an embedded, rad-hard ReBiLS I/O cell with 0.5-V low-voltage operation for interface with core logic, 5.0-V-tolerant input and 3.3-V output I/O pins, and 100-MHz minimum operation with 10- pF external loads. A third objective was to develop a 0.5- V Reed-Solomon Encoder with embedded ReBilS I/O: Transfer the existing CULPRiT RS encoder from a 0.35-micron bulk-CMOS process to the ASI 180-nm Flexfet, rad-hard SOI Process. 0.5-V low-voltage core logic. 5.0-V-tolerant input and 3.3-V output I/O pins. 100-MHz minimum operation with 10- pF external loads. The stand-alone ReBiLS chip will allow system designers to provide efficient bi-directional communication between components operating at different voltages. Embedding the ReBiLS cells into the proven Reed-Solomon encoder will demonstrate the ability to support new product development in a commercially viable, rad-hard, scalable 180-nm SOI CMOS process.

DeGregorio, Kelly↗
NASA NTRS2016

Silicon Emitter Needle and Array Design for Indium Electrospray Arrays for Spacecraft Propulsion

A design for silicon microfabricated emitter arrays was developed for electrospray thrusters for indium propellant in compact architectures with scalable thrust, low mass and volume, high specific impulse and high efficiency operation. The design elements include tip height, height uniformity across the array, tip radii, axial groove depth, tip angle, emitter shank sidewall angle and number of emitters. They were derived from commercial liquid metal ion source designs and modeling, fabrication and test results. The most critical results of the emitter array design analysis suggest that microfabricated silicon emitter array emitters should have a height greater than 280 microns with a height uniformity of +/-10 microns, a tip half angle of 49° for uniform turn-on voltages and current across the array, low beam divergence and high mass utilization efficiency. Elements of the design were fabricated and demonstrated in single emitter and in 400 element emitter arrays to validate the design, fabrication and performance capability. The design height and uniformity of arrays was demonstrated for 85% of the emitters in a prototype array. Required tip and sidewall angles and groove depths have been microfabricated. Single microfabricated silicon emitters demonstrated better performance in current and voltage characteristics than commercially available liquid metal ion sources. Microfabricated emitters and arrays demonstrated the required current and stability performance to enable the MEP thruster development for indium propellant.

Marrese-Reading, Colleen M.↗