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At least 181 records · Page 10

Study Acoustic Emissions from Composites

The nondestructive evaluation (NDE) of future propulsion systems utilizing advanced composite structures for the storage of cryogenic fuels, such as liquid hydrogen or oxygen, presents many challenges. Economic justification for these structures requires, light weight, reusable components with an infrastructure allowing periodic evaluation of structural integrity after enduring demanding stresses during operation. A major focus has been placed on the use of acoustic emission NDE to detect propagating defects, in service, necessitating an extensive study into characterizing the nature of acoustic signal propagation at very low temperatures and developing the methodology of applying AE sensors to monitor cryogenic components. This work addresses the question of sensor performance in the cryogenic environment. Problems involving sensor mounting, spectral response and durability are addressed. The results of this work provides a common point of measure from which sensor selection can be made when testing composite components at cryogenic temperatures.

Walker, James L.↗

Detached Growth of Germanium and Germaniumsilicon

Up to now, detached growth was observed mainly under microgravity, i.e. under the absence of hydrostatic pressure that hinders the formation of a free melt meniscus. the detached growth of germanium doped with gallium was obtained under 1 g conditions, the growth was performed in quartz-glass ampoule. Part of the crystal grew without wall contact, the detached growth was observed in-situ with a CCD-camera as well as after the growth process in form of growth lines and the formation of <111> facets on the crystal surface. GeSi crystal (oriientation: <111>, maximum silicon content: 4 at%, seed material: Ge) was grown in a pBN crucible (excluding the possibility of in-situ monitoring of the growth process). The grown crystal exhibits three growth facets, indicating also wall free growth. Surface analysis of the crystals (NDIC, SEM) and characterization of crystal segregation (EDAX, resistivity measurement) and defect structure (EPD, x-ray diffraction measurements) will be presented.

Dold, P.↗

Manufacturing Robustness of CSP in SMT Line

In this paper, the assembly process flow, solder paste for different stencil design, manufacturing defects, X-ray inspection results, and ultrasonic characterizations are reported.

electronic assembly SMT CSP fine pitch microvia te↗

Zircon (U-TH)/He Impact Crater Thermochronometry and the Effects of Shock Microstructures on Helium Diffusion Kinetics

Accurate age determinations of hyper-velocity impact and cratering events remains difficult and often controversial, while less than half of all known impact craters are regarded as accurately and precisely dated. Besides 40Ar/39Ar and U-Pb methods, zircon (U-Th)/He dating of impactites is a burgeoning technique to date large- to medium-sized impact structures. Zircon (U-Th)/He ages can be fully reset in minutes at 1000°C, T commonly reached in and directly adjacent to impact melt domains, whereas complete resetting of zircon (U-Th)/He at <300°C, which might be encountered near the crater margins or persist in post-impact hydrothermal systems, may take >103-4 years. However, there is a critical need to test the reliability of (U-Th)/He impact dating in shock deformed zircon, and to quantify helium diffusion kinetics in well-characterized grains with a broad spectrum of shock-induced defect substructures. For this purpose, we investigated samples from two impact structures, the 66 Ma Chicxulub multi-ring basin and the 15 Ma Ries complex crater, to compare zircon diffusion kinetics from impact structures with varying parameters, including size, age, and hydrothermal system longevity. Shock microstructures were characterized by backscattered-electron (BSE) imaging prior to determination of diffusion step-heating fractional release experiments using light-bulb furnace with prograde and retrograde incrementally 10°C steps from 300°C to 600°C. We find that zircon with low-level shock microstructures exhibit no significant deviation from helium diffusion kinetics of undamaged zircon. In contrast, zircon grains with planar deformation features and granular textures classified by SEM are characterized by a dramatic decrease in helium retentivity, similar to radiation damage, due to the reduction in the effective domain size and the introduction of fast diffusion pathways. This likely renders shocked grains more susceptible to impact-induced hydrothermal resetting. Hence, characterization of impact microstructure is critical for determining accurate impact ages, but also offers the opportunity to determine the magnitude and duration of post-impact hydrothermal circulation.

Catherine Ross↗

Are Soft Short Tests Good Indicators of Internal Li-ion Cell Defects?

The self discharge test at full state of charge, may not be a good one to detect subtle defects since the li-ion chemistry has the highest self discharge at full state of charge. One should characterize self discharge versus storage time for each cell manufacturer/design to differentiate between normal self discharge and that due to a subtle manufacturing defect. The various soft short test methods indicate that if this test is carried out at full discharge (0% SOC) with all capacity removed (by lowering the current load in a stepwise manner to the same end of discharge voltage), then the cells need to be placed in storage for more than 72 hours to get a good analysis on the presence of subtle defects since it takes more than 72 hours to achieve voltage stabilization. If the cells are to be charged up even to a small percentage (ex. 1%), 72 hours are sufficient to determine issues. However, the pass/fail criteria should be based on a valid OCV decline. Less than 10 mV voltage decline is not a good method to detect subtle defects. As mentioned in the first bullet, self discharge is a competing reaction when a charge is introduced and hence a characterization of the self discharge versus storage time is required to fully correlate voltage decline to a failure due to a subtle defect. Soft short test method cannot be relied on for defect detection because cells with and without voltage decline seemed to have similar defects and characteristics. Screening methods such as internal resistance and capacity as well as a 3-sigma range for OCV, mass and dimensions should be used to screen out outliers. A very critical aspect in the understanding of subtle defects is to carry out destructive analysis of cells from every lot to confirm the quality of production and screen all cells and batteries in a stringent manner to have a high quality set of flight cells. Self Discharge Test: Fully charged cells shall be placed in Open circuit stand for 72 hours (OCV measurement twice a day); continue for total of 14 days with 1 reading per day 2. Soft Short Test 1: Fully charge; cells discharged to manufacturer's end of disch. Voltage (EODV) cutoff at C/5 rate; stand for 30 minutes; discharge with C/500 to the same EODV. stand for another 30 minutes; discharge the cells again using C/1000 current to the same EODV. OCV measurements twice a day for 72 hours and then for total of 14 days (data collection same as in 1.) 3. Soft Short Test 2: Fully charge; cells discharged to the manuf. EODV with a C/13 constant current; provide a 10 hour rest, discharge again to the same EODV with a current of C/250, provide a 10 hour rest, discharge again using a C/250 rate, provide a 24 hour rest, charge using C/250 to 3.15 V (for ~12 hours). OCV measurements twice a day for at 72 hours. (data collection same as in 1.) 4. Soft Short Test 3: Fully charge; cells shall be discharged using C/10 current to manuf. EODV. Allow the cell to remain at Open circuit for 10 seconds. Discharge the cell at C/20 rate to the same EODV, hold open circuit for 24 hours. Discharge the cells at C/200 rate to the same end of voltage cutoff and hold open circuit for 24 hours. Discharge the cells one more time at C/200 rate to the same EODV and hold open circuit for 36 hours. Charge at C/200 rate to 3.15 V and hold for 3 days. Record OCV during the open circuit stand periods every 12 hours and at the beginning and end of the 3 day hold (include the 12 hour OCV recording during this time also). Capacity Cycling: Cells with declining voltages - one cell from each manufacturer chosen for cycling Destructive Physical Analysis (DPA): Cells with and without decline chosen from each lot for DPA.

Jeevarajan, J.↗

Local Guided Wavefield Analysis for Characterization of Delaminations in Composites

Delaminations in composite laminates resulting from impact events may be accompanied by minimal indication of damage at the surface. As such, inspection techniques are required to ensure defects are within allowable limits. Conventional ultrasonic scanning techniques have been shown to effectively characterize the size and depth of delaminations but require physical contact with the structure. Alternatively, a noncontact scanning laser vibrometer may be used to measure guided wave propagation in the laminate structure. A local Fourier domain analysis method is presented for processing guided wavefield data to estimate spatially-dependent wavenumber values, which can be used to determine delamination depth. The technique is applied to simulated wavefields and results are analyzed to determine limitations of the technique with regards to determining defect size and depth. Finally, experimental wavefield data obtained in quasi-isotropic carbon fiber reinforced polymer (CFRP) laminates with impact damage is analyzed and wavenumber is measured to an accuracy of 8.5% in the region of shallow delaminations. Keywords: Ultrasonic wavefield imaging, Windowed Fourier transforms, Guided waves, Structural health monitoring, Nondestructive evaluation

Rogge, Matthew D.↗

A Model-Based, Bayesian Solution for Characterization of Complex Damage Scenarios in Aerospace Composite Structures

Ultrasonic damage detection and characterization is commonly used in nondestructive evaluation (NDE) of aerospace composite components. In recent years there has been an increased development of guided wave based methods. In real materials and structures, these dispersive waves result in complicated behavior in the presence of complex damage scenarios. Model-based characterization methods utilize accurate three dimensional finite element models (FEMs) of guided wave interaction with realistic damage scenarios to aid in defect identification and classification. This work describes an inverse solution for realistic composite damage characterization by comparing the wavenumber-frequency spectra of experimental and simulated ultrasonic inspections. The composite laminate material properties are first verified through a Bayesian solution (Markov chain Monte Carlo), enabling uncertainty quantification surrounding the characterization. A study is undertaken to assess the efficacy of the proposed damage model and comparative metrics between the experimental and simulated output. The FEM is then parameterized with a damage model capable of describing the typical complex damage created by impact events in composites. The damage is characterized through a transdimensional Markov chain Monte Carlo solution, enabling a flexible damage model capable of adapting to the complex damage geometry investigated here. The posterior probability distributions of the individual delamination petals as well as the overall envelope of the damage site are determined.

H. Reed↗

Adapting ODC for Empirical Evaluation of Pre-Launch Anomalies

This slide presentation reviews the concept of using Orthogonal Defect Classification (ODC) to identify pre-launch anomalies in software. The goals of this work are: (1) To characterize pre-launch software anomalies, using data from multiple spacecraft projects, by means of a defect-analysis technology, Orthogonal Defect Classification (ODC). (2) To support transfer of ODC to NASA projects through applications and demonstrations. Approach: Analyzed anomaly data using adaptation of Orthogonal Defect Classification (ODC) method. This project has adapted ODC for NASA use and applied to NASA projects.

defect analysis↗

X-ray Microscopic Characterization of Protein Crystals

The microscopic mapping of the variation in degree of perfection and in type of defects in entire protein crystals by x-rays may well be a prerequisite for better understanding causes of lattice imperfections, the growth history, and properties of protein crystals. However, x-ray microscopic characterization of bulk protein crystals, in the as-grown state, is frequently more challenging than that of small molecular crystals due to the experimental difficulties arising largely from the unique features possessed by protein crystals. In this presentation, we will illustrate ssme recent activities in employing coherence-based phase contrast x-ray imaging and high-angular-resolution diffraction techniques for mapping microdefects and the degree of perfection of protein crystals, and demonstrate a correlation between crystal perfection, diffraction phenomena., and crystallization conditions. The observed features and phenomena will be discussed in context to gain insight into the nature of defects, nucleation and growth, and the properties of protein crystals.

Hu, Z. W.↗

Process-Induced Morphological Defects in Epitaxial CVD Silicon Carbide

Silicon carbide (SiC) semiconductor technology has been advancing rapidly, but there are numerous crystal growth problems that need to be solved before SiC can reach its full potential. Among these problems is a need for an improvement in the surface morphology of epitaxial films that are grown to produce device structures. Various processes before and during epilayer growth lead to the formation of morphological defects observed in SiC epilayers grown on SiC substrates. In studies of both 6H and 4H-SiC epilayers, atomic force microscopy (AFM) and other techniques have been used to characterize SiC epilayer surface morphology. In addition to the well-known micropipe defect, SiC epilayers contain growth pits, triangular features (primarily) in 4H-SiC, and macro step due to step bunching. In work at NASA Lewis, it has been found that factors contributing to the formation of some morphological defects include: defects in the substrate bulk, defects in the substrate surface caused by cutting and polishing the wafer, the tilt angle of the wafer surface relative to the basal plane, and growth conditions. Some of these findings confirm results of other research groups. This paper presents a review of published and unpublished investigations into processes that are relevant to epitaxial film morphology.

Powell, J. A.↗

Surface defects and chemistry on the SnO2(110) surface

A variety of ultrahigh vacuum (UHV) surface science techniques have been used to characterize the structural, electronic and chemical properties of SnO2(110), a model catalytic surface. Two types of surface oxygen vacancies have been identified, each associated with different band gap (defect) electronic states. Adsorption experiments show that the interaction of simple gases with this surface occurs primarily through these oxygen vacancies and can show site-specificity to only one of the two types of vacancies.

Cox, David F.↗

Bulk Growth of Wide Band Gap II-VI Compound Semiconductors by Physical Vapor Transport

The mechanism of physical vapor transport of II-VI semiconducting compounds was studied both theoretically, using a one-dimensional diffusion model, as well as experimentally. It was found that the vapor phase stoichiometry is critical in determining the vapor transport rate. The experimental heat treatment methods to control the vapor composition over the starting materials were investigated and the effectiveness of the heat treatments was confirmed by partial pressure measurements using an optical absorption technique. The effect of residual (foreign) gas on the transport rate was also studies theoretically by the diffusion model and confirmed experimentally by the measurements of total pressure and compositions of the residual gas. An in-situ dynamic technique for the transport rate measurements and a further extension of the technique that simultaneously measured the partial pressures and transport rates were performed and, for the first time, the experimentally determined mass fluxes were compared with those calculated, without any adjustable parameters, from the diffusion model. Using the information obtained from the experimental transport rate measurements as guideline high quality bulk crystal of wide band gap II-VI semiconductor were grown from the source materials which undergone the same heat treatment methods. The grown crystals were then extensively characterized with emphasis on the analysis of the crystalline structural defects.

Su, Ching-Hua↗

Bulk Growth of Wide Band Gap II-VI Compound Semiconductors by Physical Vapor Transport

The mechanism of physical vapor transport of II-VI semiconducting compounds was studied both theoretically, using a one-dimensional diffusion model, as well as experimentally. It was found that the vapor phase stoichiometry is critical in determining the vapor transport rate. The experimental heat treatment methods to control the vapor composition over the starting materials were investigated and the effectiveness of the heat treatments was confirmed by partial pressure measurements using an optical absorption technique. The effect of residual (foreign) gas on the transport rate was also studies theoretically by the diffusion model and confirmed experimentally by the measurements of total pressure and compositions of the residual gas. An in-situ dynamic technique for the transport rate measurements and a further extension of the technique that simultaneously measured the partial pressures and transport rates were performed and, for the first time, the experimentally determined mass fluxes were compared with those calculated, without any adjustable parameters, from the diffusion model. Using the information obtained from the experimental transport rate measurements as guideline high quality bulk crystal of wide band gap II-VI semiconductor were grown from the source materials which undergone the same heat treatment methods. The grown crystals were then extensively characterized with emphasis on the analysis of the crystalline structural defects.

Su, Ching-Hua↗

Structural Verification of the Redesigned Space Shuttle Bipod Foam Closeout

This document outlines the structural verification approach for the Space Shuttle External Tank Forward Bipod Foam Closeout. Due to the Space Shuttle Columbia accident, debris has become a major concern. The intent of the structural verification is to ensure that any debris shed from the bipod is within acceptable limits. Since cohesive failure due to internal defects was identified as the most likely cause of the STS-107 bipod ramp foam failure, verification for this failure mode receives particular emphasis. However, all failure modes for TPS are considered and appropriate verification rationale is developed for each failure mode. Figure 1 depicts the structural verification of a production design where analysis and test are the primary methods of verification. It can be seen that the successful completion of structural verification is dependent on three main areas: 1. Production process control and quality assurance must ensure that test articles and/or analytical models are representative of (or conservatively envelope) production hardware in terms of geometry, materials and processing. Variability and defects must be considered. 2. Flight environments must be sufficiently characterized to bound driving environments for all failure modes. Applied environments, either test or analytical, must be representative of flight environments and have a load factor that satisfies design requirements. 3. Structural verification must include all failure modes. A comprehensive list of failure modes and the underlying failure mechanisms has been generated based on flight and test experience. Verification tests and / or analyses must address each failure mode. ET TPS Verification is accomplished by a combination of analysis, test, and similarity.

Poole, Eric L.↗

Utilization of the Building-Block Approach in Structural Mechanics Research

In the last 20 years NASA has worked in collaboration with industry to develop enabling technologies needed to make aircraft safer and more affordable, extend their lifetime, improve their reliability, better understand their behavior, and reduce their weight. To support these efforts, research programs starting with ideas and culminating in full-scale structural testing were conducted at the NASA Langley Research Center. Each program contained development efforts that (a) started with selecting the material system and manufacturing approach; (b) moved on to experimentation and analysis of small samples to characterize the system and quantify behavior in the presence of defects like damage and imperfections; (c) progressed on to examining larger structures to examine buckling behavior, combined loadings, and built-up structures; and (d) finally moved to complicated subcomponents and full-scale components. Each step along the way was supported by detailed analysis, including tool development, to prove that the behavior of these structures was well-understood and predictable. This approach for developing technology became known as the "building-block" approach. In the Advanced Composites Technology Program and the High Speed Research Program the building-block approach was used to develop a true understanding of the response of the structures involved through experimentation and analysis. The philosophy that if the structural response couldn't be accurately predicted, it wasn't really understood, was critical to the progression of these programs. To this end, analytical techniques including closed-form and finite elements were employed and experimentation used to verify assumptions at each step along the way. This paper presents a discussion of the utilization of the building-block approach described previously in structural mechanics research and development programs at NASA Langley Research Center. Specific examples that illustrate the use of this approach are included from recent research and development programs for both subsonic and supersonic transports.

Rouse, Marshall↗

AM Powder Flowability Capabilities at NASA Marshall Space Flight Center (MSFC)

Additive Manufacturing (AM) powder flowability is critical to metal 3D printing, because the more fluid the powder is, the better powder spreads. The NASA MSFC’s Contamination Control Team (CCT) studies density, flow, particle size distribution, and morphology for programs such as Moon-to-Mars Planetary Autonomous Construction Technology (MMPACT), ASTM Proficiency Testing for AM and Powder Metallurgy, and MSFC’s AM team. Examining and measuring powder characteristics is essential for improving flowability of AM powder and ensuring lot-to-lot consistency, which will help to prevent defects in manufactured parts. The CCT uses several methods to characterize AM powder. Optical particle size distribution and morphology analyses determine particle parameters including size, circularity, convexity, and dimensions. The Carney and Hall Flowmeter Funnel measures time it takes powder to flow through a funnel to compare relative flowability (free-flowing and non-free-flowing). In addition to this, the device utilizes a density cup which determines apparent density. Lastly, the Revolution Powder Analyzer measures dynamic powder flowability and behavior over time via digital imaging. Using the CCT’s lab, the team has produced ASTM Powder Proficiency Testing results with flow rates, apparent density, particle size distribution, and tap density on titanium-based and nickel-based powder and compared data with other companies/labs. Morphology data was also collected for various regolith simulant powder for the MMPACT program. Lastly, the CCT used morphology data to examine the flowability of Inconel 718 powder for Selective Laser Melting (SLM) and Directed Energy Deposition (DED) printers at MSFC. The CCT’s essential work in studying and enabling AM powder characterization has helped and will continue to help study new and refined powders in the AM industry.

Additive Manufacturing↗

Electroluminescence Imaging: A Quantitative Characterization Technique to Measure Dust Occlusion of Solar Cells

Electroluminescence (EL) imaging is a qualitative characterization technique that is typically used to identify cracks, corrosion, and other defects in solar cells. It consists of imaging a cell under forward bias, where the solar cell emits photons due to radiative electron-hole pair recombination. Over the past few years, our team has expanded this into a quantitative technique with the help of image processing. We have primarily used this method to investigate lunar dust occlusion of solar cells and arrays. Lunar dust accumulation on solar cells is a major concern because it directly limits light accessible to the cell, decreasing power output. Many teams are working to develop dust mitigation technology to protect these arrays on the surface of the Moon, but thoroughly characterizing their efficacy is important to ensure their success prior to launch. Here, we present EL as a quantitative characterization technique to observe dust coverage on solar cells that, when coupled with IV performance measurements, can offer unique insights into how dust coverage impacts power output. Quantitative electroluminescence imaging works by running EL images through an image processing script that first grayscales the image then plots a histogram of the brightness of each pixel. On its own, it does not offer much insight into a solar cell’s performance. However, when comparing images to a baseline pristine, undamaged, or uncoated solar cell, it can quickly provide information about the impacts of surface contaminants or damage to the cell. Here, we present a case study where quantitative EL is used to measure the efficacy of dust mitigation technology for flexible solar arrays and discuss the lessons learned about dust mitigation, testing with lunar simulant, and this characterization technique.

photovoltaics↗

Automated System Tests High-Power MOSFET's

Computer-controlled system tests metal-oxide/semiconductor field-effect transistors (MOSFET's) at high voltages and currents. Measures seven parameters characterizing performance of MOSFET, with view toward obtaining early indication MOSFET defective. Use of test system prior to installation of power MOSFET in high-power circuit saves time and money.

Huston, Steven W.↗