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At least 181 records · Page 10

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NASA NTRS1972

Advances in pyroelectric infrared detectors.

Recent improvements in the pyroelectric detector have been due to the development of locked-in polarization, further reduction of the FET leakage current, and reduction of short circuit noise. The pyroelectric detector has been successfully employed in these typical applications: (1) thermograph using a single detector and X-Y scanner, (2) focal plane reticle scanner, (3) linear array thermal imaging system, (4) pyroelectric image tube, (5) radiometers (vertical temperature profile radiometer, carbon dioxide sensor), (6) high speed spectrometer, and (7) laser detector.

Beerman, H. P.↗

NASA NTRS1974

Basic memory module

Construction and electrical characterization of the 4096 x 2-bit Basic Memory Module (BMM) are reported for the Space Ultrareliable Modular Computer (SUMC) program. The module uses four 2K x 1-bit N-channel FET, random access memory chips, called array chips, and two sense amplifier chips, mounted and interconnected on a ceramic substrate. Four 5% tolerance power supplies are required. At the Module, the address, chip select, and array select lines require a 0-8.5 V MOS signal level. The data output, read-strobe, and write-enable lines operate at TTl levels. Although the module is organized as 4096 x 2 bits, it can be used in a 8196 x 1-bit application with appropriate external connections. A 4096 x 1-bit organization can be obtained by depopulating chips.

Tietze, F. C.↗

NASA NTRS1974

A solid-state converter for measurement of aircraft noise and sonic boom

A solid-state converter, used in a system of instrumentation for measuring aircraft noise and sonic boom, features a dual-gate FET mixer and an output stage designed for compatibility with a zero drive amplifier. With a half-inch condenser microphone the converter itself has an operating frequency range from dc-28 kHz (-3 dB), a dynamic range of 72 dB, and a noise floor of 50 dB in the band from 22.4 Hz to 22.4 kHz; the system requires no impedance matching networks and is insensitive to cable length up to at least 3000 ft.

Zuckerwar, A. J.↗

NASA NTRS1974

A stable, linear frequency-modulated oscillator, part 1

The development of a push-pull frequency-modulated oscillator employing field-effect transistors is described. The advantages of field-effect transistors for use in a frequency-stable oscillator are presented. Linearization of the frequency deviation was accomplished by utilizing the square-law characteristic of an FET used as a modulating amplifier. The push-pull oscillator model produced a linear frequency deviation of more than 10 MHz at a center frequency of approximately 100 MHz. Output power is within 0.6 db of a nominal +8.5 dBm over the desired frequency range, and the modulation bandwidth is dc to 10 MHz. Frequency variation with temperature after compensation with a negative-temperature-coefficient capacitor is within + or - 0.05% from 0 to 60 C.

Honnell, M. A.↗

NASA NTRS1975

Insulated electrocardiographic electrodes

An integrated system is disclosed including an insulated electrode and an impedance transformer which can be assembled in a small plastic housing and used for the acquisition of electrocardiographic data. The electrode may be employed without a paste electrolyte and may be attached to the body for extended usage without producing skin reaction. The electrode comprises a thin layer of suitable nontoxic dielectric material preferably deposited by radio frequency sputtering onto a conductive substrate. The impedance transformer preferably comprises an operational amplifier having an FET input stage connected in the unity gain configuration which provides a very low lower cut-off frequency, a high input impedance with a very small input bias current, a low output impedance, and a high signal-to-noise ratio.

David, R. M.↗

NASA NTRS1975

Modulation linearization of a frequency-modulated voltage controlled oscillator, part 3

An analysis is presented for the voltage versus frequency characteristics of a varactor modulated VHF voltage controlled oscillator in which the frequency deviation is linearized by using the nonlinear characteristics of a field effect transistor as a signal amplifier. The equations developed are used to calculate the oscillator output frequency in terms of pertinent circuit parameters. It is shown that the nonlinearity exponent of the FET has a pronounced influence on frequency deviation linearity, whereas the junction exponent of the varactor controls total frequency deviation for a given input signal. A design example for a 250 MHz frequency modulated oscillator is presented.

Honnell, M. A.↗

NASA NTRS1975

Self-scanned Digicon - A digital image tube for astronomical spectroscopy

We have successfully fabricated, tested, and operated a digital image tube consisting of a magnetically focused image intensifier tube in which a self-scanned linear array of 1024 silicon photodiodes operating in the EBS mode serves as the photoelectron image detector, amplifier, and intermediate image storage device. Integral on-chip MOS shift registers driven by an external clock sequentially interrogate the photodiodes through MOS FET multiplex switch arrays. Each output frame is a sequence of 256 analog pulses on each of four video lines. Laboratory and observing tests show that the output signal is photoelectron shot noise limited over at least a range of 1-100,000 detected photoelectrons per picture element, indicating that single photon detection is achieved. High-resolution astronomical spectroscopy has been carried out in the coude spectrograph of the 2.7-m telescope at McDonald Observatory. Examples are shown.

Tull, R. G.↗

NASA NTRS1975

FEP-TEFLON encapsulated solar cell modules Further progress

A progress report, starting with November 1973, is given in the design, development, and performance of lightweight flexible FET (Fluorinated Ethylene Propylene) encapsulated solar cell modules intended to form standardized building blocks for large roll-up or fold-up solar cell blankets with performances on the order of 100 W/sq m and 80 W/kg in near space. It is shown that interconnected FEP encapsulated modules of advanced design can withstand all typical ground handling, assembly, storage, and launch conditions, and are well suited for high-power space applications.

Rauschenbach, H. S.↗

NASA NTRS1975

The revolution in data gathering systems

This paper gives a review of the data-acquisition systems used in NASA's wind tunnels from the 1950's to the present as a basis for assessing the impact of minicomputers and microcomputers on data acquisition and processing. The operation and disadvantages of wind-tunnel data systems are summarized for the period before 1950, the early 1950's, the early and late 1960's, and the early 1970's. Some significant advances discussed include the use or development of solid-state components, minicomputer systems, large central computers, on-line data processing, autoranging DC amplifiers, MOS-FET multiplexers, MSI and LSI logic, computer-controlled programmable amplifiers, solid-state remote multiplexing, integrated circuits, and microprocessors. The distributed system currently in use with the 40-ft by 80-ft wind tunnel at Ames Research Center is described in detail. The expected employment of distributed systems and microprocessors in the next decade is noted.

Cambra, J. M.↗

NASA NTRS1978

Symmetric voltage-controlled variable resistance

Feedback network makes resistance of field-effect transistor (FET) same for current flowing in either direction. It combines control voltage with source and load voltages to give symmetric current/voltage characteristics. Since circuit produces same magnitude output voltage for current flowing in either direction, it introduces no offset in presense of altering polarity signals. It is therefore ideal for sensor and effector circuits in servocontrol systems.

Vanelli, J. C.↗

NASA NTRS1978

Universal test fixture for solar cells

Coverings for solar cells are evaluated conveniently with alumina ceramic circuit board holding three pairs of cells and three field-effect translator (FET) chips overlaid with candidate encapsulant. With fixture, solar cells and encapsulants are exposed to Sunlight and weather, either natural or artificial, to provide pertinent measurement and performance data.

Kolyer, J. M.↗

NASA NTRS1980

Limiting amplifier for microwaves

Limiting amplifier, using gallium arsenide field effect transistor (FET), delivers constant-amplitude drive signal to KU-band traveling wave tube (TWT) thus preventing distortion in output from TWT.

Owens, J. N.↗

NASA NTRS1979

Applicability of solid state microwave technology to solar power satellites

A potential SPS design using antenna mounted GaAs FET's as the basic dc-RF converter is described, together with the rationale of why such a design may represent a viable cost effective complement to current SPS designs using tube type dc-RF converters such as klystrons or crossed field amplifiers. An initial description of a microwave antenna array module is given, together with a concept of how such a module is to be integrated into the SPS overall design. A comparison is made of several such designs using either antenna mounted or solar cell mounted dc-RF converters.

Nalos, E. J.↗

NASA NTRS1979

Velocity overshoot effect on a short-gate microwave MESFET

The device parameters of short-gate GaAs and InP FETs have been found to be dependent on the nonequilibrium velocity overshoot phenomenon. Both saturation velocity and critical field are found to be larger for shorter gates. The v-E characteristics of Pucel et al. (1975) are modified. The cutoff frequency and other parameters for GaAs, InP, and Si are given as a function of gate length and bias. The cutoff frequency of InP MESFETs with a doping density of 10 to the 17th per cu cm is only 20% higher than those of equivalent GaAs MESFETs at 300 K. Comparison with other work is also presented.

Wang, Y.-C.↗

NASA NTRS1980

Continuous control of phase-locked-loop bandwidth

Tracking loop filter with continuous bandwidth control smooths transition from wide to narrow band. Circuit was designed for Space Shuttle where bandwidth varied between 320 Hz for acquisition and 20 Hz for tracking. Field-effect transitor (FET) acts as voltage controlled variable resistance, changing time constant of filter between phase detector and voltage-controlled oscillator in phase-locked loop.

Motal, G. W.↗

NASA NTRS1980

On-board processing concepts for future satellite communications systems

The initial definition of on-board processing for an advanced satellite communications system to service domestic markets in the 1990's is discussed. An exemplar system with both RF on-board switching and demodulation/remodulation baseband processing is used to identify important issues related to system implementation, cost, and technology development. Analyses of spectrum-efficient modulation, coding, and system control techniques are summarized. Implementations for an RF switch and baseband processor are described. Among the major conclusions listed is the need for high gain satellites capable of handling tens of simultaneous beams for the efficient reuse of the 2.5 GHz 30/20 frequency band. Several scanning beams are recommended in addition to the fixed beams. Low power solid state 20 GHz GaAs FET power amplifiers in the 5W range and a general purpose digital baseband processor with gigahertz logic speeds and megabits of memory are also recommended.

Brandon, W. T.↗

NASA NTRS1979

IC Ku-band Impatt Amplifier

High efficiency GaAs low-high-low IMPATTs were investigated. Theoretical analyses were employed to establish a design window for the material parameters to maximize microwave performance. Single mesa devices yielded typically 2 to 3 W with 16 to 23% efficiency in waveguide oscillator test circuits. IMPATTs with high reliability Pt/TiW/Pt/Au metallizations were subjected to temperature stress, non-rf bias-temperature stress, and rf bias-temperature stress. Assuming that temperature is the driving force behind the dominant failure mechanism, a mean-time-to-failure considerably greater than 500,000 hours is indicated by the stress tests. A 15 GHz, 4W, 56 dB gain microstrip amplifier was realized using GaAs FETs and IMPATTs. Power combining using a 3 db Lange coupler is employed in the power output stage having an intrinsic power-added efficiency of 15.7%. Overall dc-to-rf efficiency of the amplifier is 10.8%. The amplifier has greater than a 250 MHz, 1 db bandwidth; operates over the 0 deg to 50 C (base plate) temperature range with less than 0.5 db change in the power output; weighs 444 grams; and has a volume of 220 cu cm.

Sokolov, V.↗

NASA NTRS1980

An experimental 20/30 GHz communications satellite conceptual design employing multiple-beam paraboloid reflector antennas

An experimental 20/30 GHz communications satellite conceptual design is described which employs multiple-beam paraboloid reflector antennas coupled to a TDMA transponder. It is shown that the satellite employs solid state GaAs FET power amplifiers and low noise amplifiers while signal processing and switching takes place on-board the spacecraft. The proposed areas to be served by this satellite would be the continental U.S. plus Alaska, Hawaii, Puerto Rico, and the Virgin Islands, as well as southern Canada and Mexico City. Finally, attention is given to the earth stations which are designed to be low cost.

Goldman, A. M., Jr.↗