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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 181 records · Page 10
All sourcesNASA NTRSDOE OSTI
NASA NTRS2006

MMIC DHBT Common-Base Amplifier for 172 GHz

Figure 1 shows a single-stage monolithic microwave integrated circuit (MMIC) power amplifier in which the gain element is a double-heterojunction bipolar transistor (DHBT) connected in common-base configuration. This amplifier, which has been demonstrated to function well at a frequency of 172 GHz, is part of a continuing effort to develop compact, efficient amplifiers for scientific instrumentation, wide-band communication systems, and radar systems that will operate at frequencies up to and beyond 180 GHz. The transistor is fabricated from a layered structure formed by molecular beam epitaxy in the InP/InGaAs material system. A highly doped InGaAs base layer and a collector layer are fabricated from the layered structure in a triple mesa process. The transistor includes two separate emitter fingers, each having dimensions of 0.8 by 12 m. The common-base configuration was chosen for its high maximum stable gain in the frequency band of interest. The input-matching network is designed for high bandwidth. The output of the transistor is matched to a load line for maximum saturated output power under large-signal conditions, rather than being matched for maximum gain under small-signal conditions. In a test at a frequency of 172 GHz, the amplifier was found to generate an output power of 7.5 mW, with approximately 5 dB of large-signal gain (see Figure 2). Moreover, the amplifier exhibited a peak small-signal gain of 7 dB at a frequency of 176 GHz. This performance of this MMIC single-stage amplifier containing only a single transistor represents a significant advance in the state of the art, in that it rivals the 170-GHz performance of a prior MMIC three-stage, four-transistor amplifier. [The prior amplifier was reported in "MMIC HEMT Power Amplifier for 140 to 170 GHz" (NPO-30127), NASA Tech Briefs, Vol. 27, No. 11 (November 2003), page 49.] This amplifier is the first heterojunction- bipolar-transistor (HBT) amplifier built for medium power operation in this frequency band. The performance of the amplifier as measured in the aforementioned tests suggests that InP/InGaAs HBTs may be superior to high-electron-mobility (HEMT) transistors in that the HBTs may offer more gain per stage and more output power per transistor.

Paidi, Vamsi↗
NASA NTRS1987

Oscillator With Low Phase Noise

Phase errors cancelled for high frequency stability. Radio-frequency oscillator achieves high stability of frequency through parallel, two-amplifier configuration in which effects cause phase noise tend to cancel each other. Circuit includes two amplifiers with resonating elements, each constitutes part of feedback loop of other. Generate same frequency because each circuit provides other with conditions necessary for oscillation.

Kleinberg, Leonard L.↗
NASA NTRS2011

All-Solid-State 2.45-to-2.78-THz Source

Sources in the THz range are required in order for NASA to implement heterodyne instruments in this frequency range. The source that has been demonstrated here will be used for an instrument on the SOFIA platform as well as for upcoming astrophysics missions. There are currently no electronic sources in the 2 3- THz frequency range. An electronically tunable compact source in this frequency range is needed for lab spectroscopy as well as for compact space-deployable heterodyne receivers. This solution for obtaining useful power levels in the 2 3- THz range is based on utilizing power-combined multiplier stages. Utilizing power combining, the input power can be distributed between different multiplier chips and then recombined after the frequency multiplication. A continuous wave (CW) coherent source covering 2.48 2.75 THz, with greater than 10 percent instantaneous and tuning bandwidth, and having l 14 W of output power at room temperature, has been demonstrated. This source is based on a 91.8 101.8-GHz synthesizer followed by a power amplifier and three cascaded frequency triplers. It demonstrates that purely electronic solid-state sources can generate a useful amount of power in a region of the electromagnetic spectrum where lasers (solid-state or gas) were previously the only available coherent sources. The bandwidth, agility, and operability of this THz source has enabled wideband, high-resolution spectroscopic measurements of water, methanol, and carbon monoxide with a resolution and signal-to-noise ratio unmatched by other existing systems, providing new insight in the physics of these molecules. Further - more, the power and optical beam quality are high enough to observe the Lamb-dip effect in water. The source frequency has an absolute accuracy better than 1 part in 1012, and the spectrometer achieves sub-Doppler frequency resolution better than 1 part in 108. The harmonic purity is better than 25 dB. This source can serve as a local oscillator for a variety of heterodyne systems, and can be used as a method for precision control of more powerful but much less frequency-agile quantum mechanical terahertz sources.

Mehdi, Imran↗
NASA NTRS1989

The development of crossflow vortices on a 45 degree swept wing

Three-dimensional boundary-layer experiments are currently being conducted on a 45 deg swept wing in the Arizona State University Unsteady Wind Tunnel. Crossflow-dominated transition is produced via a model with contoured end liners to simulate infinite swept-wing flow. Fixed-wavelength stationary and traveling crossflow vortex are observed. The stationary vortex wavelengths vary with Reynolds number as predicted by linear-stability theory, but with observed wavelengths which are about 25 percent smaller than theoretically predicted. The frequencies of the most-amplified moving waves are in agreement with linear-stability theory; traveling waves at higher frequencies than predicted are also observed. These higher-frequency waves may be harmonics of the primary crossflow waves generated by a parametric resonance phenomena. Boundary-layer profiles measured at several spanwise locations show streamwise disturbance profiles characteristic of the crossflow instability. Near the transition location, severe distortions of the laminar boundary-layer profiles are observed. Mean-profile measurements are compared to theoretical predictions.

Mousseux, Marc C.↗
NASA NTRS1971

Constant-amplitude, frequency- independent phase shifter

Electronic circuit using operational amplifiers provides output with constant phase shift amplitude, with respect to sinusoidal input, over wide range of frequencies. New circuit includes field effect transistor, Q, operational amplifiers, A1 and A2, and phase detector.

Deboo, G. J.↗
NASA NTRS2004

T-shaped emitter metal heterojunction bipolar transistors for submillimeter wave applications

We report on the development of submillimeter wave transistors at JPL. The goal of the effort is to produce advance-reliable high frequency and high power amplifiers, voltage controlled oscillators, active multipliers, and high-speed mixed-signal circuits for space borne applications. The technology in development to achieve this is based on the Indium Phosphide (InP) Heterojunction Bipolar Transistor (HBT). The HBT is well suited for high speed, high power and uniform (across wafer) performance, due to the ability to tailor the material structure that electrons traverse through by well-controlled epitaxial growth methods. InP with its compatible lattice matched alloys such as indium gallium arsenide (InGaAs) and indium aluminium arsenide (InAlAs) provides for high electron velocities and high voltage breakdown capabilities. The epitaxial methods for this material system are fairly mature, however the implementation of high performance and reliable transistors are still under development by many laboratories. Our most recently fabricated, second generation mesa HBTs at JPL have extrapolated current gain cutoff frequency (FJ of 142GHz and power gain cutoff frequency (Fm,) of approximately 160GHz. This represents a 13% and 33% improvement of Ft and F, respectively, compared to the first generation mesa HBTs [l]. Analysis based on the University of California, Santa Barbara (UCSB) device model, RF device characteristics can be significantly improved by reducing base contact resistance and base metal contact width. We will describe our effort towards increasing transistor performance and yield.

transistor↗
NASA NTRS1970

Artificial-feedback system

System suppresses spurious sinusoidal responses of any sinusoidally driven amplifier showing time-dependent phase shift versus frequency function. System is applicable to any sinusoidally driven amplifier. Technique eliminates, or reduces, unwanted spurious vibrations during tests to determine dynamic frequency responses of mechanical systems.

Sutton, J. F.↗
NASA NTRS2005

Control of Combustion-Instabilities Through Various Passive Devices

It is well known that under some operating conditions, rocket engines (using solid or liquid fuels) exhibit unstable modes of operation that can lead to engine malfunction and shutdown. The sources of these instabilities are diverse and are dependent on fuel, chamber geometry and various upstream sources such as pumps, valves and injection mechanism. It is believed that combustion-acoustic instabilities occur when the acoustic energy increase due to the unsteady heat release of the flame is greater than the losses of acoustic energy from the system [1, 2]. Giammar and Putnam [3] performed a comprehensive study of noise generated by gasfired industrial burners and made several key observations; flow noise was sometimes more intense than combustion roar, which tended to have a characteristic frequency spectrum. Turbulence was amplified by the flame. The noise power varied directly with combustion intensity and also with the product of pressure drop and heat release rate. Karchmer [4] correlated the noise emitted from a turbofan jet engine with that in the combustion chamber. This is important, since it quantified how much of the noise from an engine originates in the combustor. A physical interpretation of the interchange of energy between sound waves and unsteady heat release rates was given by Rayleigh [5] for inviscid, linear perturbations. Bloxidge et al [6] extended Rayleigh s criterion to describe the interaction of unsteady combustion with one-dimensional acoustic waves in a duct. Solutions to the mass, momentum and energy conservation equations in the pre- and post-flame zones were matched by making several assumptions about the combustion process. They concluded that changes in boundary conditions affect the energy balance of acoustic waves in the combustor. Abouseif et al [7] also solved the one-dimensional flow equations, but they used a onestep reaction to evaluate the unsteady heat release rate by relating it to temperature and velocity perturbations. Their analysis showed that oscillations arise from coupling between entropy waves produced at the flame and pressure waves originating from the nozzle. Yang and Culick [8] assumed a thin flame sheet, which is distorted by velocity and pressure oscillations. Conservation equations were expressed in integral form and solutions for the acoustic wave equations and complex frequencies were obtained. The imaginary part of the frequency indicated stability regions of the flame. Activation energy asymptotics together with a one-step reaction were used by McIntosh [9] to study the effects of acoustic forcing and feedback on unsteady, one-dimensional flames. He found that the flame stability was altered by the upstream acoustic feedback. Shyy et al [10] used a high-accuracy TVD scheme to simulate unsteady, one-dimensional longitudinal, combustion instabilities. However, numerical diffusion was not completely eliminated. Recently, Prasad [11] investigated numerically the interactions of pressure perturbations with premixed flames. He used complex chemistry to study responses of pressure perturbations in one-dimensional combustors. His results indicated that reflected and transmitted waves differed significantly from incident waves.

Frendi, Kader↗
NASA NTRS2009

Generating Ka-Band Signals Using an X-Band Vector Modulator

A breadboard version of a transmitter for radio communication at a carrier frequency of 32 GHz (which is in the Ka band) utilizes a vector modulator operating at a carrier frequency of 8 GHz (the low end of the X band) to generate any of a number of advanced modulations that could include amplitude and/or phase modulation components. The 8-GHz modulated signal is mixed with a 24-GHz signal generated by an upconverter to obtain the desired 32-GHz modulated output. The transmitter is being developed as a prototype of downlink transmitters for transmission of data from spacecraft to Earth at high rates (>100 Mb/s). The transmitter design could also be adapted to terrestrial and Earth/satellite communication links. The advanced modulations (which can include M-ary phase-shift keying (M-PSK), offset phase-shift keying (OPSK), and M-ary quadrature amplitude modulation (M-QAM). These modulations are needed because for a given amount of signal bandwidth, they enable transmission of data at rates greater than those of older, simpler modulation schemes. The transmitter architecture (see figure) was chosen not only to enable generation of the required modulations at 32 GHz but also to reduce the number of components needed to implement the transmitter. Instead of incorporating an 8-GHz signal source, the transmitter utilizes an 8-GHz signal generated by a voltage-controlled oscillator that is part of an X-band transponder with which the fully developed version of this transmitter would be used in the original intended spacecraft application. The oscillator power is divided onto two paths, one of which goes through the vector modulator, the other through amplifiers and a 3 frequency multiplier. Band-pass filters are included downstream of the frequency multiplier to suppress unwanted harmonics.

Smith, Scott↗
NASA NTRS1966

Instrument automatically selects peak acceleration signal from several accelerometers

Solid state circuit selects the highest of several ac accelerometer signals and gates this signal to an output amplifier, preserving all the frequency information in the peak signal. If the amplitudes of the accelerometer signals change with time, the circuit will continually switch to the highest signal, rejecting the smaller signals.

Chapman, C. P.↗
NASA NTRS1970

Integrator for on-line measurement of buffet signals

Device determines average rms value of buffet signals by integrating rms signals from strain gages for preselected period of time. System measures average rms value of other transient data, and the upper frequency limit depends on the frequency response of the amplifiers.

Batts, C. N.↗
NASA NTRS1974

Demodulator for carrier transducers

A carrier type transducer is supplied with a carrier wave via an audio amplifier, a filter, a frequency divider, and an oscillator. The carrier is modulated in accordance with the parameter being measured by the transducer and is fed to the input of a digital data system which may include a voltmeter. The output of the oscillator and the output of each stage of the divider are fed to an AND or a NAND gate and suitable variable and fixed delay circuits to the command input of the digital data system. With this arrangement, the digital data system is commanded to sample at the proper time so that the average voltage of the modulated carrier is measured. It may be utilized with ancillary circuitry for control of the parameter

Roller, R. F.↗
NASA NTRS1977

A unified acquisition system for acoustic data

A multichannel, acoustic AM carrier system was developed for a wide variety of applications, particularly for aircraft noise and sonic boom measurements. Each data acquisition channel consists of a condenser microphone, an acoustic signal converter, and a Zero Drive amplifier, along with peripheral supporting equipment. A control network insures continuous optimal tuning of the converter and permits remote calibration of the condenser microphone. With a 12.70-mm (1/2-in.) condenser microphone, the converter/Zero Drive amplifier combination has a frequency response from 0 Hz to 20 kHz (-3 db), a dynamic range exceeding 70 db, and a minimum noise floor of 50 db ref. 20 micro Pa) in the band 22.4 Hz to 22.4 kHz. The system requires no external impedance matching networks and is insensitive to cable length, at least up to 900 m (3,000 ft). System gain varies only + or - 1 db over the temperature range 4 to 54 C (40 to 130 F). Adapters are available to accommodate 23.77-mm (1-in.) and 6.35-mm (1/4-in.) microphones and to provide 30-db attenuation. A field test to obtain the acoustical time history of a helicopter flyover proved successful.

Zuckerwar, A. J.↗
NASA NTRS1985

Automatic Robot Safety Shutdown System

Robot turned off if acceleration exceeds preset value. Signals from accelerometer on robot arm pass through filter and amplifier, eliminating high-frequency noise and hydraulic-pump pulsations. Data digitized and processed in computer. Unit controls other machines that perform repetitive movements, including rotary tables, tracked vehicles, conveyor lines, and elevators.

Lirette, M.↗
NASA NTRS1987

Microwave performance of an optically controlled AlGaAs/GaAs high electron mobility transistor and GaAs MESFET

Direct current and also the microwave characteristics of optically illuminated AlGaAs/GaAs HEMT are experimentally measured for the first time and compared with that of GaAs MESFET. The results showed that the average increase in the gain is 2.89 dB under 1.7 nW/sq cm optical intensity at 0.83 microns. Further, the effect of illumination on S-parameters is more pronounced when the devices are biased close to pinch off. Novel applications of optically illuminated HEMT as a variable gain amplifier, high speed high frequency photo detector, and mixer are demonstrated.

Simons, Rainee N.↗
NASA NTRS1987

Microwave performance of an optically controlled AlGaAs/GaAs high electron mobility transistor and GaAs MESFET

Direct current and also the microwave characteristics of optically illuminated AlGaAs/GaAs HEMT are experimentally measured for the first time and compared with that of GaAs MESFET. The results showed that the average increase in the gain is 2.89 dB under 1.7 mW optical intensity at 0.83 microns. Further, the effect of illumination on S-parameters is more pronounced when the devices are biased close to pinch off. Novel applications of optically illuminated HEMT as a variable gain amplifier, high speed high frequency photodetector, and mixer are demonstrated.

Simons, Rainee N.↗
NASA NTRS1988

Advanced altimetry

The radar altimeter being developed for the Ocean Topography Experiment (TOPEX) will have an inherent instrument precision of 2 to 3 cm. While some minor refinements may be possible in the future, major geophysical advances could be made if altimetric measurements over a wide swath of the Earth's surface were possible. The NASA Headquarters Oceanic Processes Branch is supporting a 3-year investigation of the technological issues inherent in the precision measurement of topography from spaceborne platforms at angles off-nadir. To explore the off-nadir measurement of topography, a flexible, airborne radar instrument system is being developed. Its hardware design is now complete, and it is made up of several subsystems. The antenna selected is a dielectric lens of .894 m diameter. The RF subsystem uses phase-locked oscillators, FET solid-state amplifiers, and times four frequency multipliers to develop a transmit signal at a frequency of 36.0 GHz and a local oscillator signal at a frequency of 35.4 GHz. Lecroy 6880 digitizers under computer control digitize the five receiver outputs. The digital subsystem consists of six single-board Heurikon processors. At this time, the instrument construction continues with final system integration planned for November 1988.

Parsons, C. L.↗