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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 181 records · Page 10
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NASA NTRS1984

Formation and dynamics of large-scale magnetic structures in the ionosphere of Venus

The formation and dynamics of large-scale magnetic structures in the ionosphere of Venus are examined. It is shown that such structures must be the result of steady state convection of interplanetary field lines into the ionosphere by the small amount of solar wind plasma (less than or approximately equal to 1-5 percent) absorbed by the planetary atmosphere below the ionopause, rather than isolated remnants of large fields persisting for long periods without connection to the solar wind induced current and convection pattern. In particular, it is demonstrated that the magnetic diffusion of such structures would result in their dissipation with time scales of 1-10 min, if they were not steady state structures in convective and diffusive equilibriuim. It is shown that the equations governing the diffusion of these magnetic structures are similar to those governing diffusion of a gas out of an enclosed chamber with a porous wall, and a simple analog is illustrated. The application of these results to magnetic fields of astrophysical plasmas is discussed.

Cloutier, P. A.↗
NASA NTRS1984

Effects of the Solar and Extraterrestrial Environments on Space Power Systems

Environments surrounding the major extraterrestrial bodies in the solar system and their interactions with spacecraft power systems are summarized. The environments associated with neutrals/dust, low energy plasma, and where applicable, magnetospheres are discussed for a wide variety of cases. The impact of these environments on power systems - in particular, radiation effects, spacecraft charging, plasma interactions, surface sputtering/erosion, and induced currents - are presented. As power systems must be designed to survive in these hostile environments, it is important that they be taken into account in planning future power systems.

Garrett, H. B.↗
NASA NTRS1985

Compositional analysis of silicon

The use of surface analysis methods in the detection and evaluation of elemental and impurity species in Si is presented. Examples are provided from polycrystalline Si and high-efficiency MINP cells. Auger electron spectroscopy and secondary ion mass spectrometry are used to complement microelectrical data obtained by electron-beam induced-current measurements. A new method is discussed which utilizes the volume indexing of digital secondary ion mass spectroscopy signals, providing compositional information and impurity maps on internal materials/device interfaces.

Kazmerski, L. L.↗
NASA NTRS1985

EBIC Characterization and Hydrogen Passivation in Silicon Sheet

As a general qualitative tool, the electron beam induced current (EBIC) method can be very useful in imaging recombination in silicon sheet used for solar cells. Work using EBIC on EFG silicon ribbon is described. In particular, some efforts at making the technique more quantitative and hence more useful, some limitations of the method, and finally specific application to hydrogen passivation is treated. Some brief remarks are made regarding the technique itself.

Hanoka, J. I.↗
NASA NTRS1985

EBIC spectroscopy - A new approach to microscale characterization of deep levels in semi-insulating GaAs

The microscale characterization of electronic defects in (SI) GaAs has been a challenging issue in connection with materials problems encountered in GaAs IC technology. The main obstacle which limits the applicability of high resolution electron beam methods such as Electron Beam-Induced Current (EBIC) and cathodoluminescence (CL) is the low concentration of free carriers in semiinsulating (SI) GaAs. The present paper provides a new photo-EBIC characterization approach which combines the spectroscopic advantages of optical methods with the high spatial resolution and scanning capability of EBIC. A scanning electron microscope modified for electronic characterization studies is shown schematically. The instrument can operate in the standard SEM mode, in the EBIC modes (including photo-EBIC and thermally stimulated EBIC /TS-EBIC/), and in the cathodo-luminescence (CL) and scanning modes. Attention is given to the use of CL, Photo-EBIC, and TS-EBIC techniques.

Li, C.-J.↗
NASA NTRS1984

Recombination-active defects in silicon ribbon and polycrystalline solar cells

This paper reports results from a study of recombination-active structural defects in silicon ribbon and polycrystalline solar cells using the electron beam induced current (EBIC) technique in a scanning electron microscope. It is demonstrated that low temperature EBIC measurements can reveal a range of defects that are not observable at room temperature, including slip dislocations in silicon dendritic web ribbons as well as decorated twin boundaries and dislocation complexes in cast polycrystalline silicon solar cell materials.

Cheng, L. J.↗
NASA NTRS1985

On the electromagnetic scattering from infinite rectangular conducting grids

The study and development of two numerical techniques for the analysis of electromagnetic scattering from a rectangular wire mesh are described. Both techniques follow from one basic formulation and they are both solved in the spectral domain. These techniques were developed as a result of an investigation towards more efficient numerical computation for mesh scattering. These techniques are efficient for the following reasons: (a1) make use of the Fast Fourier Transform; (b2) they avoid any convolution problems by converting integrodifferential equations into algebraic equations; and (c3) they do not require inversions of any matrices. The first method, the SIT or Spectral Iteration Technique, is applied for regions where the spacing between wires is not less than two wavelengths. The second method, the SDCG or Spectral Domain Conjugate Gradient approach, can be used for any spacing between adjacent wires. A study of electromagnetic wave properties, such as reflection coefficient, induced currents and aperture fields, as functions of frequency, angle of incidence, polarization and thickness of wires is presented. Examples and comparisons or results with other methods are also included to support the validity of the new algorithms.

Christodoulou, C.↗
NASA NTRS1985

Defect characterization of silicon dendritic web ribbons

Progress made in the study of defect characterization of silicon dendritic web ribbon is presented. Chemical etching is used combined with optical microscopy, as well as the electron beam induced current (EBIC) technique. Thermal annealing effect on carrier lifetime is examined.

Cheng, L. J.↗
NASA NTRS1985

High-purity silicon crystal growth investigations

The study of silicon sheet material requirements for high efficiency solar cells is reported. Research continued on obtaining long lifetime single crystal float zone silicon and on understanding and reducing the mechanisms that limit the achievement of long lifetimes. The mechanisms studied are impurities, thermal history, point defects, and surface effect. The lifetime related crystallographic defects are characterized by X-ray topography and electron beam induced current.

Ciszek, T. F.↗
NASA NTRS1987

Diffraction Analysis of Antennas With Mesh Surfaces

Strip-aperture model replaces wire-grid model. Far-field radiation pattern of antenna with mesh reflector calculated more accurately with new strip-aperture model than with wire-grid model of reflector surface. More adaptable than wire-grid model to variety of practical configurations and decidedly superior for reflectors in which mesh-cell width exceeds mesh thickness. Satisfies reciprocity theorem. Applied where mesh cells are no larger than tenth of wavelength. Small cell size permits use of simplifying approximation that reflector-surface current induced by electromagnetic field is present even in apertures. Approximation useful in calculating far field.

Rahmat-Samii, Yahya↗
NASA NTRS1986

Analysis of Jovian decametric data: Study of radio emission mechanisms

Catalogues of approx. 200 decametric arcs and approx. 200 gaps between arcs were studied, in an effort to reconcile the data with predictions for the model wherein reflections of Io-induced currents each emit in a conical pattern and yield a distinct radio arc. The most recent interpretations of this data suggest that these Io-produced Alfven waves persist for at least one or two passages of Io, and that the emission cone half angles are approx. 40 to 90 deg., varying from arc to arc. Below 1.2 MHz it was discovered that Jupiter emits radiation strongly modulated in frequency with periods of approx. 200 kHz; this quasi-sinusoidal emission (MSA) can shift more than 180 deg. in phase over periods of 6 seconds, although these shifts are usually much smaller. MSA is not strongly correlated with the longitudes of Io or Jupiter, and typically occurs in patches covering approx. 500 kHz or more for periods of a few minutes. Furthermore, this modulation sometimes resembles a train of impulses in frequency with exponential decays toward high frequencies. Comparison of these results with the previous studies of V-shaped S-bursts is suggestive of an emission mechanism.

Staelin, D. H.↗
NASA NTRS1986

Development of high-efficiency solar cells on silicon web

Achievement of higher efficiency cells by directing efforts toward identifying carrier loss mechanisms; design of cell structures; and development of processing techniques are described. Use of techniques such as deep-level transient spectroscopy (DLTS), laser-beam-induced current (LBIC), and transmission electron microscopy (TEM) indicated that dislocations in web material rather than twin planes were primarily responsible for limiting diffusion lengths in the web. Lifetimes and cell efficiencies can be improved from 19 to 120 microns, and 8 to 10.3% (no AR), respectively, by implanting hydrogen at 1500 eV and a beam current density of 2.0 mA/sq cm. Some of the processing improvements included use of a double-layer AR coating (ZnS and MgF2) and an addition of an aluminum back surface reflectors. Cells of more than 16% efficiency were achieved.

Meier, D. L.↗
NASA NTRS1986

Stress and efficiency studies in EFG

The goals of this program were: (1) to define minimum stress configurations for silicon sheet growth at high speeds; (2) to quantify dislocation electrical activity and their limits on minority carrier diffusion length in deformed silicon; and (3) to study reasons for degradation of lifetime with increases in doping level in edge-defined film-fed growth (EFG) materials. A finite element model was developed for calculating residual stress with plastic deformation. A finite element model was verified for EFG control variable relationships to temperature field of the sheet to permit prediction of profiles and stresses encountered in EFG systems. A residual stress measurement technique was developed for finite size EFG material blanks using shadow Moire interferometry. Transient creep response of silicon was investigated in the temperature range between 800 and 1400 C in strain and strain regimes of interest in stress analysis of sheet growth. Quantitative relationships were established between minority carrier diffusion length and dislocation densities using Electron Beam Induced Current (EBIC) measurement in FZ silicon deformed in four point bending tests.

Source record↗
NASA NTRS1987

Diffusion length measurements in bulk and epitaxially grown 3-5 semiconductors using charge collection microscopy

Diffusion lengths and surface recombination velocities were measured in GaAs diodes and InP finished solar cells. The basic techniques used was charge collection microscopy also known as electron beam induced current (EBIC). The normalized currents and distances from the pn junction were read directly from the calibrated curves obtained while using the line scan mode in an SEM. These values were then equated to integral and infinite series expressions resulting from the solution of the diffusion equation with both extended generation and point generation functions. This expands previous work by examining both thin and thick samples. The surface recombination velocity was either treated as an unknown in a system of two equations, or measured directly using low e(-) beam accelerating voltages. These techniques give accurate results by accounting for the effects of surface recombination and the finite size of the generation volume.

Leon, R. P.↗
NASA NTRS1986

Characterization of the heavily doped emitter and junction regions of silicon solar cells using an electron beam

Heavily doped emitter and junction regions of silicon solar cells are investigated by means of the electron-beam-induced-current (EBIC) technique. Although the experimental EBIC data are collected under three-dimensional conditions, it is analytically demonstrated with two numerical examples that the solutions obtained with one-dimensional numerical modeling are adequate. EBIC data for bare and oxide-covered emitter surfaces are compared with theory. The improvement in collection efficiency when an emitter surface is covered with a 100-A SiO2 film varies with beam energy; for a cell with a junction depth of 0.35 microns, the improvement is about 54 percent at 2 keV.

Luke, K. L.↗
NASA NTRS1987

Enhanced current flow through a plasma cloud by induction of plasma turbulence

Electrodynamic tethers have been proposed as a means of generating power in low earth orbit. One of the limitations on the power generated is the relatively low electron current that can be collected. It is proposed that the electron current can be significantly enhanced by means of current-induced plasma turbulence in a plasma cloud around the collecting anode. This is examined for the specific case of ion acoustic turbulence. An important conclusion is that the use of plasma clouds in the ionosphere will entail a high-impedance (no instability) and a low-impedance (ion acoustic instability) mode of operation. The low-impedance mode of operation will have two submodes, one steady state and one pulsed.

Hastings, D. E.↗
NASA NTRS1987

Diffusion length measurement in bulk and epitaxially grown III-V semiconductors using charge collection microscopy

Diffusion lengths and surface recombination velocities were measured in GaAs diodes and InP finished solar cells. The basic technique used was charge collection microscopy, also known as electron beam induced current (EBIC). The normalized currents and distances from the pn junction were read directly from the calibrated curves obtained while using the line-scan mode in an SEM. These values were then equated to integral and infinite series expressions resulting from the solution of the diffusion equation with both extended-generation and point-generation functions. This expands previous work by examining both thin and thick samples. The surface recombination velocity was either treated as an unknown in a system of two equations or measured directly using low e(-) beam accelerating voltages. These techniques give accurate results by accounting for the effects of surface recombination and the finite size of the generation volume.

Leon, R. P.↗