Search NASA⌕ Search

SEARCH · Search NASA

Results for “Induced Currents”

Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

Quote a phrase for an exact phrase match. Source license links do not imply unrestricted reuse.

At least 181 records · Page 10
All sourcesNASA NTRSDOE OSTI
DOE OSTI2026

Electronic Origin of Delicate Antiferromagnetism in Fe 𝑥 ⁢NbS 2

Among the family of intercalated transition-metal dichalcogenides (TMDs), Fe 𝑥 ⁢NbS 2 is found to possess unique current-induced resistive switching behaviors, tunable antiferromagnetic states, and a commensurate charge order, all of which are tied to a critical Fe doping of 𝑥 𝑐 = 1/3. However, the electronic origin of such extreme stoichiometry sensitivities remains unclear. Combining angle-resolved photoemission spectroscopy (ARPES) with density functional theory (DFT) calculations, we identify and characterize a dramatic eV-scale electronic restructuring that occurs across the 𝑥𝑐. Moment-carrying Fe 3⁢𝑑 𝑧 2 electrons manifest as narrow bands within 200 meV of the Fermi level, distinct from other transition metal intercalated TMD magnets. These states strongly hybridize with itinerant electrons in the TMD layer and rapidly lose coherence above 𝑥 𝑐 due to correlation-driven effects. This sudden quasiparticle decoherence collapses the Fe-Nb hybridization, which explicitly suppresses the out-of-plane effective Fe-Fe exchange interaction, driving the transformation of the magnetic ground state from an antiferromagnetic stripe phase to a zigzag phase. Furthermore, these observations resemble the exceptional electronic and magnetic sensitivity of strongly correlated systems, and demonstrate that quantifying orbital-specific hybridization via ARPES offers an alternative pathway to evaluate effective magnetic exchange in metallic magnets, complementing inelastic neutron and resonant x-ray scattering probes.

Angle-resolved photoemission spectroscopy↗
DOE OSTI2025

Electromagnetic modeling and science reach of DMRadio-m 3

DMRadio-m 3 is an experimental search for dark matter axions. It uses a solenoidal dc magnetic field to convert an axion dark-matter signal to an ac electromagnetic response in a coaxial copper pickup. The current induced by this axion signal is measured by dc SQUIDs. DMRadio-m 3 is designed to be sensitive to Kim-Shifman-Vainshtein-Zakharov (KSVZ) and Dine-Fischler-Srednicki-Zhitnisky (DFSZ) QCD axion models in the 10–200 MHz (41 neV/𝑐 2 –0.83 μ⁢eV/𝑐 2 ) range, and to axions with 𝑔 𝑎⁢𝛾⁢𝛾 =𝑔 𝑎⁢𝛾⁢𝛾,DFSZ ⁡(30 MHz) =1.87 ×10 −17 GeV −1 over 5–30 MHz as an extended goal. In this work, we present the electromagnetic modeling of the response of the experiment to an axion signal over the full frequency range of DMRadio-m 3 , which extends from the low-frequency, lumped-element limit to a regime where the axion Compton wavelength is only a factor of 2 larger than the detector size. With these results, we determine the live time and sensitivity of the experiment. The primary science goal of sensitivity to DFSZ axions across 30–200 MHz can be achieved with a 3⁢𝜎 live scan time of 2.9 years.

Dark matter direct detection↗
DOE OSTI2023

Flux-based three-dimensional electrodynamic modeling approach to superconducting circuits and materials

Modeling the behavior of superconducting electronic circuits containing Josephson junctions is crucial for the design of superconducting information processors and devices. In this paper, we introduce DEC-QED, a computational approach for modeling the electrodynamics of superconducting electronic circuits containing Josephson junctions in arbitrary three-dimensional electromagnetic environments. DEC-QED captures the nonlinear response and induced currents in BCS superconductors and accurately captures phenomena such as the Meissner effect, flux quantization, and Josephson effects. Using a spatial coarse-graining formulation based on discrete exterior calculus (DEC), DEC-QED can accurately simulate transient and long-time dynamics in superconductors. Finally, the expression of the entire electrodynamic problem in terms of the gauge-invariant flux field and charges makes the resulting classical field theory suitable for second quantization.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2020

Nonlinear time-domain spectroscopy near a band inversion

We develop a theory for the nonlinear time-domain response of a semimetal driven by an ultrafast optical pulse. At quadratic order in the driving field we find that the response near a band inversion transition contains a coherent oscillating component proportional to field intensity with a frequency that can be tuned over a wide range (from terahertz to the near IR) selected by the chemical potential. Finally, we illustrate the effect by calculating the induced current as a function of time for a two-band system with time-reversal symmetry but broken parity symmetry to study semimetals where large Berry curvature near a band inversion transition promotes this nonlinear response.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2025

Optimization of passive superconductors for shaping stellarator magnetic fields

Here, we consider the problem of optimizing a set of passive superconducting coils (PSCs) with currents induced by a background magnetic field rather than power supplies. In the nuclear fusion literature, such coils have been proposed to partially produce the 3D magnetic fields for stellarators and provide passive stabilization. We perform the first optimizations of PSC arrays with respect to the orientation, shape, and location of each coil, jointly minimized with the background fields. We conclude by generating passive coil array solutions for four stellarators.

coil optimization↗
DOE OSTI2024

Magnetic anisotropy in single-crystalline antiferromagnetic Mn 2 Au

Multiple recent studies have identified the metallic antiferromagnet Mn 2 ⁢Au to be a candidate for spintronic applications due to apparent in-plane anisotropy, preserved magnetic properties above room temperature, and current-induced Néel vector switching. Crystal growth is complicated by the fact that Mn 2 ⁢Au melts incongruently. We present a bismuth flux method to grow millimeter-scale bulk single crystals of Mn 2 ⁢Au in order to examine the intrinsic anisotropic electrical and magnetic properties. Flux quenching experiments reveal that the Mn 2 ⁢Au crystals precipitate below 550°⁢C, about 100⁢°⁢C below the decomposition temperature of Mn 2 ⁢Au. Bulk Mn 2 ⁢Au crystals have a room-temperature resistivity of 16–19 µ⁢Ωcm and a residual resistivity ratio of 41. Mn 2 ⁢Au crystals have a dimensionless susceptibility on the order of 10 –4 (SI units), comparable to calculated and experimental reports on powder samples. Single-crystal neutron diffraction confirms the in-plane magnetic structure. The tetragonal symmetry of Mn 2 ⁢Au constrains the ab-plane magnetic susceptibility to be constant, meaning that χ 100 =χ 110 in the low-field limit, below any spin-flop transition. We find that three measured magnetic susceptibilities χ 100 , χ 110 , and χ 001 are the same order of magnitude and agree with the calculated prediction, meaning the low-field susceptibility of Mn 2 ⁢Au is quite isotropic, despite clear differences in ab-plane and ac-plane magnetocrystalline anisotropy. Mn 2 ⁢Au is calculated to have an extremely high in-plane spin-flop field above 30 T, which is much larger than that of another in-plane antiferromagnet, Fe 2 ⁢As (less than 1 T). Finally, the subtle anisotropy of intrinsic susceptibilities may lead to dominating effects from shape, crystalline texture, strain, and defects in devices that attempt spin readout in Mn 2⁢ Au.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2025

Multimodal hard X-ray nanoprobe techniques for operando investigations of photovoltaic devices

Compared with conventional laboratory-scale X-ray techniques, synchrotron based X-rays with higher brilliance and higher coherence allow for the investigation of various material properties with high spatial resolution. The microscopic behaviours of materials can be examined using the Hard X-ray Nanoprobe beamline (I14) at Diamond Light Source, which provides a 50 nm focused beam and has been successfully employed to identify nanoscale optoelectronic features in energy-harvesting materials such as halide perovskites that exhibit local heterogeneity. We have developed X-ray beam-induced current (XBIC) measurement capability at I14 to address the growing demand for operando analysis in energy-harvesting research. Here, we demonstrate that X-ray fluorescence (XRF)/XBIC multimodal measurements are feasible at I14 and apply these newly implemented techniques to study perovskite solar cells with various additive concentrations to understand the effect of the additive on nanoscale optoelectronic performance. This expanded operando characterization capability offers the possibility of monitoring nanometre-scale compositional variations and corresponding optoelectronic features of actual solar cell configurations.

73 NUCLEAR PHYSICS AND RADIATION PHYSICS↗
DOE OSTI2021

Design and optimization of cancellation coil topologies for a ferrite-less wireless EV charging pad

Ferrite cores are widely used in conventional wireless EV charging pads to reduce stray EMF emissions, but they can be brittle, heavy, and expensive. This work furthers the development of ferrite-less wireless charging pads by comparing an active and two distinct passive cancellation coil topologies as candidates to replace the ferrite. Using the software packages FEMM and MATLAB, each topology is optimized to find the best winding positions and radii to minimize leakage at a specified position under the side of the vehicle. The optimized designs are compared for shielding effectiveness, induced current, and efficiency. All three topologies are able to sufficiently reduce the leakage field below the ICNIRP limit of 27 μTrms with just one turn. Interestingly, we find that an array of simple passive cancellation loops performs similar to the more widely studied passive cancellation coil.

Scher, Aaron D.↗
DOE OSTI2021

Carrier Diffusion Lengths in Continuously Grown and Etched-and-Regrown GaN Pin Diodes

Advanced GaN power devices are promising for many applications in high power electronics but performance limitations due to material quality in etched-and-regrown junctions prevent their widespread use. Carrier diffusion length is a critical parameter that not only determines device performance but is also a diagnostic of material quality. Here we present the use of electron-beam induced current to measure carrier diffusion lengths in continuously grown and etched-and-regrown GaN pin diodes as models for interfaces in more complex devices. Variations in the quality of the etched-and-regrown junctions are observed and shown to be due to the degradation of the n-type material. Finally, we observe an etched-and-regrown junction with properties comparable to a continuously grown junction.

42 ENGINEERING↗
DOE OSTI2020

Comparison of PID Shunting in Polycrystalline and Single-Crystal Silicon Modules via Multi-Scale, Multi-Technique Characterization

We used the methods we reported last year to investigate potential-induced degradation (PID). We have now applied these methods to single-crystalline silicon modules that have degraded during field deployment, as well as in minimodules stressed in the laboratory. We will compare these results to the polycrystalline results presented last year. Small cores have been removed from the modules and subjected to analysis. We use a combination of photoluminescence and dark lock-in thermography imaging, laser marking, electron-beam induced current measurements, and subsequent focused ion-beam marking to allow analysis of individual defects via time-of-flight secondary-ion mass spectrometry (TOF-SIMS) to investigate the root-cause mechanism for PID shunting. We see a direct correlation between recombination active shunts and sodium content. The sodium content in shunted areas peaks at the SiN/Si interface and is consistently observed at a concentration of 0.1%-1% in shunted areas. TOF-SIMS data taken on degraded and non-degraded single-crystalline sample areas show a similar trend as in the polycrystalline samples: more sodium is seen in the degraded areas.

14 SOLAR ENERGY↗
DOE OSTI2020

Nonuniform Charge Collection in SiOx-Based Passivated-Contact Silicon Solar Cells

In this contribution, we report on the charge-collection characteristics of silicon photovoltaic devices using passivated contacts based on the c-Si/SiO x /poly-Si structure. Using electron-beam induced current (EBIC) imaging in plan-view and cross-section orientations, we find that charge collection in a device with a 1.5-nm-thick SiO x layer is fairly uniform in the p-n junction region and does not appear to be influenced by pyramidal surface texture. In contrast, a device with a 2.2-nm-thick oxide layer shows significant spatial variation in the charge-collection signal. The apexes of the pyramids exhibit reduced EBIC signal whereas the valleys between adjacent pyramids show the strongest collection. Our results indicate that charge collection in c-Si/SiO x /poly-Si structures can be influenced by both the properties of the SiO x layer and surface texture.

14 SOLAR ENERGY↗
DOE OSTI2020

Evidence of Buried Junctions in CdSeTe Absorbers

The introduction of selenium band gap gradients has been shown to be a promising path for improving CdTe devices. Controlling maximum selenium concentration during deposition should allow for better device performance. In this work cross-section electron beam induced current (EBIC) maps were measured for CdSeTe/CdTe devices with as-grown selenium concentration between 0 and 20 percent. Measured EBIC profiles show high collection in the middle of the absorber layer, which differs from past EBIC studies of CdSe/CdTe devices. Increasing as-deposited selenium concentrations resulted in increased collection at this mid-absorber location. Combined with a 2-dimensional numerical model, these results suggest a buried homo-junction in the absorber layer of the device. This buried junction may be associated with a number of composition dependent parameters including electron affinity and p-dopability. Understanding this collection profile and its implications for device performance may be key in optimizing CdSeTe/CdTe devices.

CdSeTe↗
DOE OSTI2021

Pinhole Formation in Poly-Si/SiOx Passivating Contacts on Si(111)-Oriented Textures

Poly-Si/SiOx passivating contacts were grown on inverted pyramid and random pyramid textured wafers to investigate the hypothesis that pinhole formation is most susceptible at the valleys and edges of a textured surface. Tetramethylammonium hydroxide (TMAH) etching and electron beam induced current (EBIC) were used to assess pinhole formation and charge-carrier transport. Scanning electron microscopy revealed that TMAH etching can expose pinhole locations on textured surfaces. We show that pinholes may preferentially form at the vertices of inverted pyramids. Our TMAH and EBIC analyses on random pyramids show no preferential oxide breakup at the pyramid valleys.

41 EE - Solar Energy Technologies Office (EE-4S)↗
DOE OSTI2022

Mitigating the Impacts of Uncertain Geomagnetic Disturbances on Electric Grids: A Distributionally Robust Optimization Approach

Severe geomagnetic disturbances (GMDs) increase the magnitude of the electric field on the Earth’s surface (E-field) and drive geomagnetically-induced currents (GICs) along the transmission lines in electric grids. These additional currents can pose severe risks, such as current distortions, transformer saturation and increased reactive power losses, each of which can lead to system unreliability. Today several mitigation actions (e.g., changing grid topology) exist that can reduce the harmful GIC effects on the grids. Making such decisions can be challenging, however, because the magnitude and direction of the E-field are uncertain and non-stationary. In this paper, we model uncertain E-fields using the distributionally robust optimization (DRO) approach that determines optimal transmission grid operations such that the worst-case expectation of the system cost is minimized. We also capture the effect of GICs on the nonlinear AC power flow equations. For solution approaches, we develop an accelerated column-and-constraint generation (CCG) algorithm by exploiting a special structure of the support set of uncertain parameters representing the E-field. Extensive numerical experiments based on “epri-21” and “uiuc-150” systems, designed for GMD studies, demonstrate (i) the computational performance of the accelerated CCG algorithm, (ii) the superior performance of distributionally robust grid operations that satisfy nonlinear, nonconvex AC power flow equations and GIC constraints, in comparison with standard stochastic programming-based methods during the out-of-sample testing.

42 ENGINEERING↗
DOE OSTI2025

The effects of antimony incorporation on the optoelectronic properties of Cd(Se,Te) photovoltaics

One historical limitation of CdTe PV devices has been the open circuit voltage (VOC) deficit (difference between theoretical maximum VOC and measured values). While non-radiative recombination at extended structural defects and interfaces negatively impacts VOC, intentionally adding impurities (dopants) to increase the concentration of free carriers in the photovoltaic (PV) absorber material can increase the VOC. In this contribution we present a detailed analysis of the Sb doped CdTe and the Cd(Se,Te) alloy system via electron beam induced current (EBIC) measurements and the presence as well as spatial distribution of defect levels through cathodoluminescence spectrum imaging (CLSI).

14 SOLAR ENERGY↗
DOE OSTI2024

Injection, confinement, and diagnosis of electrons and positrons in a permanent magnet dipole trap

Abstract Prerequisites for the goal of studying long-lived, magnetically confined, electron–positron pair plasmas in the laboratory include the injection of both species into the trap, long trapping times, and suitable diagnostic methods. Here we report recent progress on these tasks achieved in a simple dipole trap based on a supported permanent magnet. For the injection of electrons, both an $$\textbf{E}\times B$$ E × B drift technique (of a $$\sim $$ ∼ 2– $$\upmu $$ μ A, 6-eV beam) and “edge injection” (from a filament emitting a few mA and biased to some tens of volts) have been demonstrated; the former is suitable for low-density beams with smaller spatial and velocity spreads, while the latter employs fluctuations arising from collective behavior. To diagnose the edge-injected electrons, image potentials and currents induced on a wall probe, the magnet case, and wall electrodes were measured. Confinement of drift-injected positrons, measured experimentally, exhibited at least two well-separated timescales. Simulations reproduced this qualitatively, using a simple model of elastic collisions with residual background gas, and point to small adjustments for increasing trapping times. In a major upgrade to diagnostic capabilities, 25 bismuth germanate detectors, placed in three reentrant ports, are able to localize annihilation gammas, which will be used in future experiments to distinguish between different loss channels. Graphical abstract

von der Linden, J. (ORCID:0000000327477813)↗
DOE OSTI2024

Prospects for Antiferromagnetic Spintronic Devices

This article examines recent advances in the field of antiferromagnetic spintronics from the perspective of potential device realization and applications. We discuss advances in the electrical control of antiferromagnetic order by current-induced spin–orbit torques, particularly in antiferromagnetic thin films interfaced with heavy metals. We also review possible scenarios for using voltage-controlled magnetic anisotropy as a more efficient mechanism to control antiferromagnetic order in thin films with perpendicular magnetic anisotropy. Next, we discuss the problem of electrical detection (i.e., readout) of antiferromagnetic order and highlight recent experimental advances in realizing anomalous Hall and tunneling magnetoresistance effects in thin films and tunnel junctions, respectively, which are based on noncollinear antiferromagnets. Understanding the domain structure and dynamics of antiferromagnetic materials is essential for engineering their properties for applications. For this reason, we then provide an overview of imaging techniques as well as micromagnetic simulation approaches for antiferromagnets. Finally, we present a perspective on potential applications of antiferromagnets for magnetic memory devices, terahertz sources, and detectors.

36 MATERIALS SCIENCE↗
DOE OSTI2020

HEMP Transformer Defense Through Power Electronics

High altitude electromagnetic pulses and geo-magnetic disturbances have the potential to severely impact the electric power grid by damaging large power transformers and causing severe power quality issues. This impact comes as a result of a quasi-static bias induced on transmission lines by geomagnetically induced currents which saturate magnetic components in the electric power system. This paper introduces the concept of utilizing a h-bridge inverter on the neutral of a LPT to inject a DC bias equivalent voltage onto the neutral side of the transformer windings. This biasing floats the transformer windings, eliminating the effect of the DC current and keeping the transformer from saturating. Schematic diagrams will be presented, along with simulation model data using Typhoon and PLECS, and finally test results from a benchtop hardware test.

24 POWER TRANSMISSION AND DISTRIBUTION↗