Pinhole Formation in Poly-Si/SiOx Passivating Contacts on Si(111)-Oriented Textures

Lima Salles, Caroline; Guthrey, Harvey (ORCID:0000000315743379); LaSalvia, Vincenzo; Nemeth, William; Page, Matthew; Theingi, San; Young, David L.; Agarwal, Sumit; Stradins, Paul

doi:10.1109/pvsc45281.2020.9300568

DOE OSTI · 1768306

Pinhole Formation in Poly-Si/SiOx Passivating Contacts on Si(111)-Oriented Textures

Lima Salles, Caroline·Guthrey, Harvey (ORCID:0000000315743379)·LaSalvia, Vincenzo·Nemeth, William·Page, Matthew·Theingi, San·Young, David L.·Agarwal, Sumit·Stradins, Paul

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Abstract

Poly-Si/SiOx passivating contacts were grown on inverted pyramid and random pyramid textured wafers to investigate the hypothesis that pinhole formation is most susceptible at the valleys and edges of a textured surface. Tetramethylammonium hydroxide (TMAH) etching and electron beam induced current (EBIC) were used to assess pinhole formation and charge-carrier transport. Scanning electron microscopy revealed that TMAH etching can expose pinhole locations on textured surfaces. We show that pinholes may preferentially form at the vertices of inverted pyramids. Our TMAH and EBIC analyses on random pyramids show no preferential oxide breakup at the pyramid valleys.

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41 EE - Solar Energy Technologies Office (EE-4S)inverted pyramids pinhole poly-Si/SiOx silicon oxide breakdown TMAH etching

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Lima Salles, Caroline, Guthrey, Harvey (ORCID:0000000315743379), LaSalvia, Vincenzo, Nemeth, William, Page, Matthew, Theingi, San, Young, David L., Agarwal, Sumit, Stradins, Paul. 2021-01-05. Pinhole Formation in Poly-Si/SiOx Passivating Contacts on Si(111)-Oriented Textures. https://doi.org/10.1109/pvsc45281.2020.9300568

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