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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 19 records
All sourcesNASA NTRSDOE OSTI
DOE OSTI2022

Characterization of Engineered Pinholes in Dielectric Stacks of High-Performance Poly-Silicon Passivating Contacts

Passivating contact structures are expected to be implemented in > 50 % of industrially manufactured silicon photovoltaics produced over the next decade. One type of passivating contact utilizes a c-Si/dielectric/doped poly-Si layer stack. In cases where the dielectric layer/s are thick enough to impede tunneling of charge carriers, it was shown that disruptions (pinholes) in the dielectric are required to facilitate transport.[1] Pinholes in SiOx layers have typically been formed via high temperature annealing that allows localized breakup of this layer. This approach has drawbacks; 1) high temperature annealing increases cost and 2) pinhole formation is sensitive to both the SiOx thickness and wafer surface morphology making control of density and dimensions difficult. Recently, an alternative method of pinhole formation relying on metal assisted chemical etching (MACE) was shown to allow control over pinhole areal densities.[2] Such control is critical as both the density and dimensions of the pinholes determine saturation current density and contact resistivity. The contacts formed with the MACE process are known as polysilicon on locally etched oxide or PLEO and also result in low saturation current densities and low contact resistivity due to SiOx passivation and engineered pinhole enabled charge carrier transport, respectively. Photovoltaic devices with efficiencies greater than 20 % have recently been produced with these contacts, demonstrating the viability of contacts with engineered pinholes. Experimentally, preferential local collection of excess charge carriers has been observed and definitively connected to thermally induced pinholes in thick SiOx layers within c-Si/SiOx/poly-Si contact structures.[3] Recent work has shown that enhanced local collection of excess carriers can result from enhanced diffusion of dopants through pinholes in SiOx layers.[4] This study was restricted to simulation and characterization of poly-Si with the same dopant type as the c-Si substrates. In this work we focus our analysis on boron doped poly-Si with different stacks of dielectric layers (PLEO and PLENO where the N refers to a SiNy layer on top of the SiOx) on n-type crystalline silicon. This provides insight into how engineered pinholes affect charge collection across the p-n junction. Like previous observations of locally enhanced carrier transport through thermally induced pinholes, the EBIC images in Figure 1 shows that engineered pinholes in PLENO (1a) and PLEO (1b) also exhibit locally enhanced carrier transport at pinhole locations (bright spots in the images). We will also present detailed correlative nanoscale structural and chemical analysis using TEM imaging and EELS analysis with sample preparation guided by EBIC imaging. This allows us to connect the density and dimensions of engineered pinholes with charge carrier transport and measured photovoltaic device parameters. Our findings will accelerate the adoption of PLEO and PLENO contacts in industrially manufactured photovoltaic devices.

EBIC↗
NASA NTRS2000

Formation of Leading-Edge Pinholes in the Space Shuttle Wings Investigated

The space shuttle wing leading edge and nose cap are composed of a carbon/carbon composite that is protected by silicon carbide. The coefficient of thermal expansion mismatch leads to cracks in the silicon carbide. The outer coating of the silicon carbide is a sodium-silicate-based glass that becomes fluid at the shuttles high reentry temperatures and fills these cracks. Small pinholes roughly 0.1 mm in diameter have been observed on these materials after 12 or more flights. These pinholes have been investigated by researchers at the NASA Johnson Space Center, Rockwell International, the Boeing Company, Lockheed Martin Corporation, and the NASA Glenn Research Center at Lewis Field to determine the possible sources and the extent of damage. A typical pinhole is illustrated in the photomicrographs. These pinholes are found primarily on the wing leading edges and not on the nose cap, which is covered when the orbiter is on the launch pad. The pinholes are generally associated with a bead of zincrich glass. Examination of the orbiter and launch structure indicates that weathering paint on the launch structure leads to deposits of zinc-containing paint flakes on the wing leading edge. These may become embedded in the crevices of the wing leading edge and form the observed zinc-rich glass. Laboratory experiments indicate that zinc oxide reacts vigorously with the glass coating on the silicon carbide. Thus, it is likely that this is the reaction that leads to pinhole formation (Christensen, S.V.: Reinforced Carbon/Carbon Pin Hole Formation Through Zinc Oxide Attack. Rockwell International Internal Letter, RDW 96 057, May 1996). Cross-sectional examination of pinholes suggests that they are enlarged thermal expansion mismatch cracks. This is illustrated in the photomicrographs. A careful microstructural analysis indicates that the pinhole walls consist of layers of zinc-containing glass. Thus, pinholes are likely formed by zinc oxide particles lodging in crevices and forming a corrosive zinc-rich glass that enlarges existing cracks. Having established the likely source of the pinholes, we next needed to model the damage. Our concern was that if a pinhole went through the silicon carbide to the carbon/carbon substrate, oxygen would have a clear path to oxidize the carbon at high temperatures. This possibility was examined with studies in a laboratory furnace. An ultrasonic drill was used to make artificial pinholes in a sample of protected carbon/carbon. After exposure, the specimens were weighed and cross-sectioned to quantify the extent of oxidation below the pinhole. The results at higher temperatures showed good agreement with a simple diffusion-control model. This model is based on the two-step oxidation of carbon to carbon monoxide and carbon dioxide. The fluxes are illustrated in the final figure. The model indicates a strong dependence on pinhole diameter. For smaller diameters and short times, the oxidation of carbon is very limited.

Jacobson, Nathan S.↗
DOE OSTI2023

The impacts of membrane pinholes on PEM water electrolysis

Polymer electrolyte membrane (PEM) water electrolysis is a promising technology to efficiently produce green hydrogen. Irregularities in membrane electrode assembly (MEA) component materials caused by manufacturing, processing, handling, or operation can lead to performance loss and failure. One example is the presence of pinholes in the membrane, which can cause increased gas transport (crossover) and lead to electrical shorting. This work investigates the effects of intentionally introduced pinholes with various sizes up to 350μm in diameter. The presence of the pinholes resulted in minimal impacts on the cell voltage (±30 mV at 4Acm -2 ). However, the pinholes significantly increased H 2 crossover, which decreased hydrogen production efficiency and increased the minimum current density for safe operation. The impacts of the pinhole on the H 2 crossover and efficiency are more severe for open pinhole features than tear-like pinhole features. In conclusion, this research demonstrates that even small pinholes cannot be disregarded from a safety, efficiency, and operating strategy perspective.

08 HYDROGEN↗
DOE OSTI2022

Controlling Pinhole Radius and Areal Density in a-Si/SiOx Using Metal-Assisted Chemical Etching

Polysilicon on silicon oxide (poly-Si/SiOx) passivating contacts with predominant charge-carrier transport via pinholes are currently prepared via a>1000 degrees C thermal step to induce oxide break-up. Herein, we develop the precursor of a pinhole-enabled poly-Si/SiOx contact utilizing room temperature metal-assisted chemical etching (MACE) to form pinholes in the SiOx. The pinholes were created via electroless Ag nanoparticle (Ag NP) deposition followed by the MACE of intrinsic amorphous hydrogenated silicon (a-Si:H) on SiOx, creating isolated mesopores through the film stack. By varying the MACE etching solution (HF:H2O2) concentration, we were able to vary the pinhole areal density over four orders of magnitude (104-107 cm-2). We observed the Ostwald ripening of the Ag NP to enable control over the pinhole radii. Our work demonstrates proof-of-concept for a-Si:H/SiOx with mesopores across the film stack, which may serve as precursor for the development of poly-Si/SiOx passivating contacts of both polarities.

MATERIALS SCIENCE,SOLAR ENERGY↗
NASA NTRS2013

Pinhole Effects on Venus Superpressure Balloon Lifetime

Experimental results are presented for a series of experiments that addressed the effect of small pinhole defects on the potential lifetime of a Venus superpressure balloon. The experiments were performed on samples of a candidate balloon envelope material through which a single small hole of 80 to 300 microns in diameter was deliberately made in each one by puncturing with a metal pin. The material was mounted horizontally in a test apparatus and then a 2-3 mm thick layer of sulfuric acid was placed on top to mimic balloon wetting at Venus. Acid penetration and damage manifested itself as a darkening of the aluminum metal and adhesive layers around the hole in the balloon material. There were no test conditions under which the acid simply fell through the pinhole due to gravity because the surface tension forces always compensated at this size. Very little acid-damaged material was observed for the smallest 80 micron pinholes while gas flowed through the hole due to balloon-like pressurization: the black spot size was approximately 0.2 mm in diameter after 6 days with 86% sulfuric acid. The damage area grew more quickly in the absence of gas flowing out of an 80 micron hole, namely at a rate of 2 mm/day. It was concluded that the flow of escaping gas out of the hole provides a substantial reduction of the rate of acid penetration and damage. Larger diameter pinholes of approximately 300 micron diameter showed larger growth rates of 0.7 mm/day with gas flow and 1.7 mm/day without. The pinhole size did not change over the duration of these experiments because the material has an outer layer of fluoropolymer film that remained intact during the process and thereby held the hole size constant. None of the damage rates measured in these experiments pose a threat to the lifetime of the balloon over the projected course of a 30 day mission because the affected area is too small to cause a structural failure either through direct damage or increased solar heating and attendant balloon pressurization leading to burst.

Venus↗
DOE OSTI2023

Controlled Dielectric Breakdown to Form Pinhole Passivating Contacts

This contribution explores an alternate route to forming pinhole-based poly-Si/dielectric/c-Si passivating contacts. The method utilizes controlled dielectric breakdown or electroforming to produce nanoscale pinholes in a thick (non-tunnelling) dielectric which, when annealed, allows dopant atoms to pass from doped poly-Si through the pinholes and into the c-Si wafer, forming conductive pathways. We show that the pinholes lose passivation after electroforming but can be repassivated with a forming gas anneal. N-type contacts show contact resistivities of ~20 mOhm-cm2, but p-type contacts are ~100 mOhm-cm2. Devices show a distinct kink in the J-V curve indicative of a barrier to transport. The method can be expanded to optimized dielectric passivation stacks (not just thin, single layers) and can be formed in parallel over the faces of the wafer in selected areas (pinholes only under the grid lines).

CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SU↗
NASA NTRS1992

Ion collection from a plasma by a pinhole

Ion focusing by a biased pinhole is studied numerically. Laplace's equation is solved in 3-D for cylindrical symmetry on a constant grid to determine the potential field produced by a biased pinhole in a dielectric material. Focusing factors are studied for ions of uniform incident velocity with a 3-D Maxwellian distribution superimposed. Ion currents to the pinhole are found by particle tracking. The focusing factor of positive ions as a function of initial velocity, temperature, injection radius, and hole size is reported. For a typical Space Station Freedom environment (oxygen ions having a 4.5 eV ram energy, 0.1 eV temperature, and a -140 V biased pinhole), a focusing factor of 13.35 is found for a 1.5 mm radius pinhole.

Snyder, David B.↗
NASA NTRS1998

Space Shuttle Pinhole Formation Mechanism Studies

Pinholes have been observed to form on the wing leading edge of the space shuttle after about 10-15 flights. In this report we expand upon previous observations by Christensen (1) that these pinholes often form along cracks and are associated with a locally zinc-rich area. The zinc appears to come from weathering and peeling paint on the launch structure. Three types of experimental examinations are performed to understand this issue further: (A) Detailed microstructural examination of actual shuttle pinholes (B) Mass spectrometric studies of coupons containing, actual shuttle pinholes and (C) Laboratory furnace studies of ZnO/SiC reactions and ZnO/SiC protected carbon/carbon reaction. On basis of these observations we present a detailed mechanism of pinhole formation due to formation of a corrosive ZnO-Na-2-O-SiO2 ternary glass, which flows into existing cracks and enlarges them.

Jacobson, Nathan S.↗
NASA NTRS2004

Mechanism of Pinhole Formation in Membrane Electrode Assemblies for PEM Fuel Cells

The pinhole formation mechanism was studied with a variety of MEAs using ex-situ and in-situ methods. The ex-situ tests included the MEA aging in oxygen and MEA heat of ignition. In-situ durability tests were performed in fuel cells at different operating conditions with hydrogen and oxygen. After the in-situ failure, MEAs were analyzed with an Olympus BX 60 optical microscope and Cambridge 120 scanning electron microscope. MEA chemical analysis was performed with an IXRF EDS microanalysis system. The MEA failure analyses showed that pinholes and tears were the MEA failure modes. The pinholes appeared in MEA areas where the membrane thickness was drastically reduced. Their location coincided with the stress concentration points, indicating that membrane creep was responsible for their formation. Some of the pinholes detected had contaminant particles precipitated within the membrane. This mechanism of pinhole formation was correlated to the polymer blistering.

Stanic, Vesna↗
DOE OSTI2020

Effect of Surface Texture on Pinhole Formation in SiO x -Based Passivated Contacts for High-Performance Silicon Solar Cells

High-efficiency silicon solar cells rely on some form of passivating contact structure to reduce recombination losses at the crystalline silicon surface and losses at the metal/Si contact interface. One such structure is polycrystalline silicon (poly-Si) on oxide, where heavily doped poly-Si is deposited on a SiO x layer grown directly on the crystalline silicon (c-Si) wafer. Depending on the thickness of the SiO x layer, the charge carriers can cross this layer by tunneling (<2 nm SiO x thickness) or by direct conduction through disruptions in the SiOx, often referred to as pinholes, in thicker SiO x layers (>2 nm). In this work, we study structures with tunneling- or pinhole-like SiO x contacts grown on pyramidally textured c-Si wafers and expose variations in the SiOx layer properties related to surface morphology using electron-beam-induced current (EBIC) imaging. Using EBIC, we identify and mark regions with potential pinholes in the SiO x layer. We further perform high-resolution transmission electron microscopy on the same areas, thus allowing us to directly correlate locally enhanced carrier collection with variations in the structure of the SiO x layer. Our results show that the pinholes in the SiO x layer preferentially form in different locations based on the annealing conditions used to form the device. With greater understanding of these processes and by controlling the surface texture geometry, there is potential to control the size and spatial distribution of oxide disruptions in silicon solar cells with poly-Si on oxide-type contacts; usually, this is a random phenomenon on polished or planar surfaces. Such control will enable us to consistently produce high-efficiency devices with low recombination currents and low junction resistances using this contact structure.

14 SOLAR ENERGY↗
DOE OSTI2021

Pinhole Formation in Poly-Si/SiOx Passivating Contacts on Si(111)-Oriented Textures

Poly-Si/SiOx passivating contacts were grown on inverted pyramid and random pyramid textured wafers to investigate the hypothesis that pinhole formation is most susceptible at the valleys and edges of a textured surface. Tetramethylammonium hydroxide (TMAH) etching and electron beam induced current (EBIC) were used to assess pinhole formation and charge-carrier transport. Scanning electron microscopy revealed that TMAH etching can expose pinhole locations on textured surfaces. We show that pinholes may preferentially form at the vertices of inverted pyramids. Our TMAH and EBIC analyses on random pyramids show no preferential oxide breakup at the pyramid valleys.

41 EE - Solar Energy Technologies Office (EE-4S)↗
DOE OSTI2026

Silicon pinhole strip defects and their impact on ATLAS Inner Tracker HV current measurement

In preparation for the High-Luminsity LHC (HL-LHC) [1], the ATLAS detector will undergo major detector upgrades, including the replacement of the current Inner Detector with the new all-silicon Inner Tracker (ITk) [2]. The ITk consists of a pixel detector close to the beamline surrounded by a large-area strip detector. During detector production, the electrical properties of silicon sensors and readout electronics must be characterized through a series of quality control (QC) and quality assurance tests. These tests ensure any defect is captured at the earliest possible stage. One such defect, callled a pinhole, occurs when the strip implant and the metal readout electrode are shorted through the intermediary dielectric layer. Notably, the introduction of pinholes during module assembly and pinhole effects on completed modules, especially on leakage current measurement circuitry, have never been studied. In this paper, we investigate the effect of such connections on the sensor leakage current measurements of completed modules and introduce new ways to locate pinholed strips. Here, with minor modifications to testing procedures, such defects are shown not to impede module testing or performance.

FOS: Physical sciences↗
DOE OSTI2025

Optimizing 4d Emittance Measurements Using the Pinhole Scan Technique

Accurate measurement of electron beam emittance is essential for optimizing high-brightness electron sources. The Pinhole Scan Technique measures the 4D phase space and hence the emittance by measuring the beam profile after clipping the beam using a pinhole followed by a drift section and then scanning the beam over the pinhole. This technique has been implemented in low energy (< 200 keV) beamlines at both Cornell University and Arizona State University. However, the technique poses several practical challenges. In this work, we analyze and address key issues affecting the 4D phase space and emittance measurements using this technique. We identify and investigate sources of inaccuracies like the pinhole aspect ratio, beam divergence, position-momentum correlations in the phase space, and the point-spread-function of the detector and suggest techniques to minimize them. Our findings offer a pathway to more accurate 4D phase space characterization in advanced electron beam systems.

42 ENGINEERING↗
NASA NTRS2012

Electric Field Reconstruction in the Image Plane of a High-Contrast Coronagraph Using a Set of Pinholes around the Lyot Plane

In a setup similar to the self coherent camera, we have added a set of pinholes in the diffraction ring of the Lyot plane in a high-contrast stellar Lyot coronagraph. We describe a novel complex electric field reconstruction from image plane intensity measurements consisting of light in the coronagraph's dark hole interfering with light from the pinholes. The image plane field is modified by letting light through one pinhole at a time. In addition to estimation of the field at the science camera, this method allows for self-calibration of the probes by letting light through the pinholes in various permutations while blocking the main Lyot opening. We present results of estimation and calibration from the High Contrast Imaging Testbed along with a comparison to the pair-wise deformable mirror diversity based estimation technique. Tests are carried out in narrow-band light and over a composite 10% bandpass.

coronagraphs↗
DOE OSTI2023

Pinhole electrical conductivity in polycrystalline Si on locally etched SiN$_y$/SiO$_x$ passivating contacts for Si solar cells

State-of-the-art monocrystalline Si (c-Si) solar cells require passivating contacts to achieve a high degree of charge-carrier separation and collection. In this work, we focus on boron-doped polycrystalline Si on locally etched silicon nitride/silicon oxide (PLENO) passivating contacts. In PLENO contacts, excellent surface passivation is provided by the ~10 nm dielectric bilayer, while pinholes in the dielectric bilayer, that are filled with doped polycrystalline Si, provide charge-carrier selectivity and transport. During PLENO fabrication, etch undercut in the dielectric bilayer occurs. Here, using electrical characterization and microscopies, we show that undercut causes pinholes to be electrically resistive in PLENO. A processing sequence that eliminates the undercut in the final PLENO structure results in electrically conductive pinholes with low contact resistivity.

14 SOLAR ENERGY↗
DOE OSTI2022

Controlled Dielectric Breakdown to Form Pinhole Passivated Contacts

This contribution explores a low-temperature route to forming dielectric pinholes to form poly-Si/dielectric/c-Si passivated contacts. The method utilizes controlled dielectric breakdown to form nanoscale pinholes in a thick (non-tunnelling) dielectric which, when annealed, allows dopant atoms to pass from doped poly-Si through the dielectric and into the c-Si wafer forming conductive pathways. We show that the pinholes can be repassivated with dopants and H diffusion which results in increased PL signals after processing. The method can be expanded to optimized dielectric passivation stacks (not just a single layer) and can be formed in parallel over the faces of the wafer in selected areas (only under the grid).

controlled dielectric breakdown↗
DOE OSTI2022

Controlling the Balance between Remote, Pinhole, and van der Waals Epitaxy of Heusler Films on Graphene/Sapphire

Remote epitaxy is promising for the synthesis of lattice-mismatched materials, exfoliation of membranes, and reuse of expensive substrates. However, clear experimental evidence of a remote mechanism remains elusive. Alternative mechanisms such as pinhole-seeded epitaxy or van der Waals epitaxy can often explain the resulting films. Here, in this study, we show that growth of the Heusler compound GdPtSb on clean graphene/sapphire produces a 30° rotated (R30) superstructure that cannot be explained by pinhole epitaxy. With decreasing temperature, the fraction of this R30 domain increases, compared to the direct epitaxial R0 domain, which can be explained by a competition between remote versus pinhole epitaxy. Careful graphene/substrate annealing and consideration of the relative lattice mismatches are required to obtain epitaxy to the underlying substrate across a series of other Heusler films, including LaPtSb and GdAuGe. The R30 superstructure provides a possible experimental fingerprint of remote epitaxy, since it is inconsistent with the leading alternative mechanisms.

36 MATERIALS SCIENCE↗
DOE OSTI2025

High-energy transient gas pinholes via saturated absorption

This Letter presents a spatial filter based on saturated absorption in gas as an alternative to the solid pinhole in a lens–pinhole–lens filtering system. We develop an analytic model that describes this process and demonstrate spatial filtering with simulations and experiments. We show that an ultraviolet laser pulse focused through ozone will have its spatial profile cleaned if its peak fluence rises above the ozone saturation fluence. Specifically, we demonstrate that a 5 ns 266 nm beam with 4.2 mJ of the initial energy can be effectively cleaned by focusing through a 1.4% ozone–oxygen mixture, with about 76% of the main beam energy transmitted and 89% of the sidelobe energy absorbed. In conclusion, this process can be adapted to other gases and laser wavelengths, providing alignment-insensitive and damage-resistant pinholes for high-repetition-rate high-energy lasers.

Ou, K. [Stanford Univ., CA (United States)] (ORCID↗