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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 181 records · Page 10
All sourcesNASA NTRSDOE OSTI
NASA NTRS1978

Evaluation of radiation interference in the Voyager Sun Sensor's cadmium sulfide detector

The simulation of radiation interference effects and the results of a radiation interference test on two Voyager Sun Sensor prototype detector assemblies are reported. The derivation of test levels and requirements are discussed and show that cobalt 60 gamma radiation is an effective and practical simulator of the ionization dose rate effects induced by high-energy electron flux incident on the spacecraft at a rate of 3.7 x 10 to the 8th e/sq cm-sec (10 rad(Si)/s) during closest approach to Jupiter. The test results provide information that is used to confirm an analytic correlation, and to predict satisfactory performance of a spacecraft sun sensing device having stringent angular resolution requirements. The measured detector response shows that at dose rates incident on the detector elements of 2 rad(Si)/sec, which is four times that expected during Jupiter encounter, the radiation-induced angle error is almost an order of magnitude less than that allowed by the acceptance criteria.

Clarke, T. C.↗
NASA NTRS1983

A comparison of radiation damage in liner ICs from cobalt-60 gamma rays and 2.2-MeV electrons

The total ionizing dose response of fourteen IC types from eight manufacturers was measured using Co-60 gamma rays and 2.2-MeV electrons for exposure levels of 100 to 20,000 Gy(Si). Key parameter measurements were made and compared for each device type. The data show that a Co-60 source is not a suitable simulation source for some systems because of the generally more damaging nature of electrons as well as the unpredictable nature of the individual device response to the two types of radiations used here.

Gauthier, M. K.↗
NASA NTRS1983

Radiation immune RAM semiconductor technology for the 80's

This paper presents current and short term future characteristics of RAM semiconductor technologies which were obtained by literature survey and discussions with cognizant Government and industry personnel. In particular, total ionizing dose tolerance and high energy particle susceptibility of the technologies are addressed. Technologies judged compatible with spacecraft applications are ranked to determine the best current and future technology for fast access (less than 60 ns), radiation tolerant RAM.

Hanna, W. A.↗
NASA NTRS1983

A comparison of radiation damage in linear ICs from Cobalt-60 gamma rays and 2.2 MeV electrons

The total ionizing dose response of fourteen IC types from eight manufacturers have been measured using Co-60 gamma rays and 2.2 MeV electrons for exposure levels of 100 to 20,000 Gy(Si). Key parameter measurements were made and compared for each device type. The data show that a Co-60 source may not be a suitable simulation source for some systems, because of the generally more damaging nature of electrons as well as the unpredictable nature of the individual device response to the two types of radiations used here.

Gauthier, M. K.↗
NASA NTRS1991

Test chips and ASIC qualification

A test chip set being developed to aid in the qualification of spaceborne Application Specific Integrated Circuits (ASICs) is described. The chip set consists of a process monitor for process parameter verification, a fault chip for yield analysis, a reliability chip for ASIC failure rate analysis, and total ionizing dose and single event upset chips for radiation effect analysis. The test structures contained in these chips are discussed along with representative test results.

Buehler, M. G.↗
NASA NTRS1991

The NASA Microelectronics Space Radiation Effects Program (MSREP) at the Jet Propulsion Laboratory

The primary objective of the Microelectronics Space Radiation Effects Program (MSREP) at the Jet Propulsion Laboratory (JPL) is to assist NASA in the selection of radiation hardened microelectronic parts for insertion in NASA space systems through radiation testing and research. Prior to presenting examples of the research and testing on Single Event Effects (SEE) and Total Ionizing Dose (TID) effects, the space radiation environment and radiation requirements for the CRAFT/Cassini program, a typical JPL space project, are discussed.

Barnes, C.↗
NASA NTRS1992

Shortcomings in ground testing, environment simulations, and performance predictions for space applications

This paper addresses the issues involved in radiation testing of devices and subsystems to obtain the data that are required to predict the performance and survivability of satellite systems for extended missions in space. The problems associated with space environmental simulations, or the lack thereof, in experiments intended to produce information to describe the degradation and behavior of parts and systems are discussed. Several types of radiation effects in semiconductor components are presented, as for example: ionization dose effects, heavy ion and proton induced Single Event Upsets (SEUs), and Single Event Transient Upsets (SETUs). Examples and illustrations of data relating to these ground testing issues are provided. The primary objective of this presentation is to alert the reader to the shortcomings, pitfalls, variabilities, and uncertainties in acquiring information to logically design electronic subsystems for use in satellites or space stations with long mission lifetimes, and to point out the weaknesses and deficiencies in the methods and procedures by which that information is obtained.

Stassinopoulos, E. G.↗
NASA NTRS1992

A radiation-hard, low-background multiplexer design for spacecraft imager applications

A possible multiplexer design for the focal plane for the Cassini Visible and Infrared Mapping Spectrometer (VIMS) is reviewed. The instrument's requirements for the multiplexed array are summarized. The VIMS instrument has a modest radiation-hardness requirement due to the trajectory and planetary environments in which the instrument will be required to operate. The total ionizing dose hardness requirement is a few tens of kilorads. A thin-gate oxide of a few hundred angstroms thickness is to be used. Field hardness is to be achieved by guard bands or hardened dielectric isolation. The design is argued to meet the low-noise and radiation-hardness required for imaging at Saturn. The design is versatile enough to provide double-correlated and double-uncorrelated sampling, which is accomplished in the signal processing electronics outside the focal plane.

Staller, Craig↗
NASA NTRS1990

Using advanced microelectronic test chips to qualify ASIC's for space

Qualification procedures for complex integrated circuits are being developed under a U.S. government program known as Qualified Manufacturing Lines (QML). This effort is focused on circuits designed by IC manufacturers and has not addressed application specific IC's (ASIC's) designed at system houses. The qualification procedures described here are intended to be responsive to the needs of system houses who design their own ASIC's and have them fabricated at Silicon foundries. A particular focus of this presentation will be the use of the TID (total Ionizing Dose) Chip to evaluate CMOS foundry processes and to provide parameters for circuit simulators. This chip is under development as a standard chip for qualifying the total dose aspects of ASIC's. The benefits of standardization are that the results will be well understood and easy to interpret. Data is presented and compared for 1.6 micron and 3.0 micron CMOS. The data shows that 1.6 micron CMOS is significantly harder than 3.0 micron CMOS. Two failure modes are explored: (1) the radiation-induced degradation of timing delays; and (2) radiation-induced leakage currents.

Buehler, M. G.↗
NASA NTRS1993

Design of CMOS logic gates for TID radiation

The rise time, fall time and propagation delay of the logic gates were derived. The effects of total ionizing dose (TID) radiation on the fall and rise times of CMOS logic gates were obtained using C program calculations and PSPICE simulations. The variations of mobility and threshold voltage on MOSFET transistors when subjected to TID radiation were used to determine the dependence of switching times on TID. The results of this work indicate that by increasing the size of P-channel transistor with respect to the N-channel transistors of the CMOS gates, the propagation delay of CMOS logic gate can be made to decrease with, or be independent of an increase in TID radiation.

Attia, John Okyere↗
NASA NTRS1994

Instrument and spacecraft faults associated with nuclear radiation in space

A review is given which surveys the variety of faults and failures which have occurred in space due both to the effects of single, energetic nuclear particles, as well as effects due to the accumulated ionizing dose or the fluence of nuclear particles. The review covers a variety of problems with sensors, electronics, instruments and spacecraft from several countries.

Trainos, J. H.↗
NASA NTRS1998

An Adaptable Power System with Software Control Algorithm

A low cost, flexible and modular spacecraft power system design was developed in response to a call for an architecture that could accommodate multiple missions in the small to medium load range. Three upcoming satellites will use this design, with one launch date in 1999 and two in the year 2000. The design consists of modular hardware that can be scaled up or down, without additional cost, to suit missions in the 200 to 600 Watt orbital average load range. The design will be applied to satellite orbits that are circular, polar elliptical and a libration point orbit. Mission unique adaptations are accomplished in software and firmware. In designing this advanced, adaptable power system, the major goals were reduction in weight volume and cost. This power system design represents reductions in weight of 78 percent, volume of 86 percent and cost of 65 percent from previous comparable systems. The efforts to miniaturize the electronics without sacrificing performance has created streamlined power electronics with control functions residing in the system microprocessor. The power system design can handle any battery size up to 50 Amp-hour and any battery technology. The three current implementations will use both nickel cadmium and nickel hydrogen batteries ranging in size from 21 to 50 Amp-hours. Multiple batteries can be used by adding another battery module. Any solar cell technology can be used and various array layouts can be incorporated with no change in Power System Electronics (PSE) hardware. Other features of the design are the standardized interfaces between cards and subsystems and immunity to radiation effects up to 30 krad Total Ionizing Dose (TID) and 35 Mev/cm(exp 2)-kg for Single Event Effects (SEE). The control algorithm for the power system resides in a radiation-hardened microprocessor. A table driven software design allows for flexibility in mission specific requirements. By storing critical power system constants in memory, modifying the system code for other programs is simple. These constants can be altered also by ground command, or in response to an anomolous event. All critical power system functions have backup hardware functions to prevent a software or computer glitch from propagating. A number of battery charge control schemes can be implemented by selecting the proper control terms in the code. The architecture allows the design engineer to tune the system response to various system components and anticipated load profiles without costly alterations. A design trade was made with the size, weight and power dissipation of the electronics versus the performance of the power bus to load variations. Linear, fine control is maintained with a streamlined electronics design. This paper describes the hardware design as well as the software control algorithm. The challenges of closing the system control loop digitally is discussed. Control loop margin and power system performance is presented. Lab measurements are shown and compared to the system response of a hardware model running actual flight software.

Castell, Karen↗
NASA NTRS1999

Proton Effects and Test Issues for Satellite Designers: Ionization Effects - Section 4

This portion of the Short Course is divided into two segments to separately address the two major proton-related effects confronting satellite designers: ionization effects and displacement damage effects. While both of these topics are deeply rooted in "traditional" descriptions of space radiation effects, there are several factors at play to cause renewed concern for satellite systems being designed today. For example, emphasis on Commercial Off-The-Shelf (COTS) technologies in both commercial and government systems increases both Total Ionizing Dose (TID) and Single Event Effect (SEE) concerns. Scaling trends exacerbate the problems, especially with regard to SEEs where protons can dominate soft error rates and even cause destructive failure. In addition, proton-induced displacement damage at fluences encountered in natural space environments can cause degradation in modern bipolar circuitry as well as in many emerging electronic and opto-electronic technologies. A crude, but nevertheless telling, indication of the level of concern for proton effects follows from surveying the themes treated in papers presented at this conference. The table lists themes found in the IEEE Transaction on Nuclear Science (TNS) December issue from the past year and compares them with the December issue's content a decade earlier. Ten years ago there were nine papers, or about 10% of the total, dealing with the four indicated topics. At that time, single event effects from protons were the primary concern, and these were thought to be possible only when a nuclear reaction initiated energetic recoil atoms. This is shown in the table as the 'traditional" SEE subject. A decade later, submissions addressing this topic had doubled, while papers devoted to displacement damage studies had increased from one to nine! More importantly, displacement damage effects in the natural space environments have become a concern for degradation in modern devices (other than solar cells), and this was not so ten years earlier.

Marshall, Paul W.↗
NASA NTRS1999

1999 NSREC Short Course: Proton Effects and Test Issues for Satellite Designers: Displacement Effects

This portion of the Short Course is divided into two segments to separately address the two major proton-related effects confronting satellite designers: ionization effects and displacement damage effects. While both of these topics are deeply rooted in "traditional" descriptions of space radiation effects, there are several factors at play to cause renewed concern for satellite systems being designed today. For example, emphasis on Commercial Off-The-Shelf (COTS) technologies in both commercial and government systems increases both Total Ionizing Dose (TID) and Single Event Effect (SEE) concerns. Scaling trends exacerbate the problems, especially with regard to SEEs where protons can dominate soft error rates and even cause destructive failure. In addition, proton-induced displacement damage at fluences encountered in natural space environments can cause degradation in modern bipolar circuitry as well as in many emerging electronic and opto-electronic technologies.

Marshall, Cheryl J.↗
NASA NTRS2000

Radiation Damage and Single Event Effect Results for Candidate Spacecraft Electronics

We present data on the vulnerability of a variety of candidate spacecraft electronics to proton and heavy-ion induced single-event effects and proton-induced damage. We also present data on the susceptibility of parts to functional degradation resulting from total ionizing dose at low dose rates (0.003-0.33 Rads(Si)/s). Devices tested include optoelectronics, digital, analog, linear bipolar, hybrid devices, Analog to Digital Converters (ADCs), Digital to Analog Converters (DACs), and DC-DC converters, among others.

OBryan, Martha V.↗
NASA NTRS2000

Performance Characterization of Digital Optical Data Transfer Systems for Use in the Space Radiation Environment

Radiation effects in photonic and microelectronic components can impact the performance of high-speed digital optical data link in a variety of ways. This segment of the short course focuses on radiation effects in digital optical data links operating in the MHz to GHz regime. (Some of the information is applicable to frequencies above and below this regime) The three basic component level effects that should be considered are Total Ionizing Dose (TID), Displacement Damage Dose (DDD) and Single Event Effects (SEE). In some cases the system performance degradation can be quantified from component level tests, while in others a more holistic characterization approach must be taken. In Section 2.0 of this segment of the Short Course we will give a brief overview of the space radiation environment follow by a summary of the basic space radiation effects important for microelectronics and photonics listed above. The last part of this section will give an example of a typical mission radiation environment requirements. Section 3.0 gives an overview of intra-satellite digital optical data link systems. It contains a discussion of the digital optical data link and it's components. Also, we discuss some of the important system performance metrics that are impacted by radiation effects degradation of optical and optoelectronic component performance. Section 4.0 discusses radiation effects in optical and optoelectronic components. While each component effect will be discussed, the focus of this section is on degradation of passive optical components and SEE in photodiodes (other mechanisms are covered in segment II of this short course entitled "Photonic Devices with Complex and Multiple Failure Modes"). Section 5.0 will focus on optical data link system response to the space radiation environment. System level SEE ground testing will be discussed. Then we give a discussion of system level assessment of data link performance when operating in the space radiation environment.

Reed, Robert A.↗
NASA NTRS2000

Radiation effects on DC-DC Converters

DC-DC switching converters are circuits that can be used to convert a DC voltage of one value to another by switching action. They are increasing being used in space systems. Most of the popular DC-DC switching converters utilize power MOSFETs. However power MOSFETs, when subjected to radiation, are susceptible to degradation of device characteristics or catastrophic failure. This work focuses on the effects of total ionizing dose on converter performance. Four fundamental switching converters (buck converter, buck-boost converter, cuk converter, and flyback converter) were built using Harris IRF250 power MOSFETs. These converters were designed for converting an input of 60 volts to an output of about 12 volts with a switching frequency of 100 kHz. The four converters were irradiated with a Co-60 gamma source at dose rate of 217 rad/min. The performances of the four converters were examined during the exposure to the radiation. The experimental results show that the output voltage of the converters increases as total dose increases. However, the increases of the output voltage were different for the four different converters, with the buck converter and cuk converter the highest and the flyback converter the lowest. We observed significant increases in output voltage for cuk converter at a total dose of 24 krad (si).

Zhang, Dexin↗