Search NASA⌕ Search

SEARCH · Search NASA

Results for “MOCVD”

Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

Quote a phrase for an exact phrase match. Source license links do not imply unrestricted reuse.

At least 181 records · Page 10
All sourcesNASA NTRSDOE OSTI
NASA NTRS1989

Investigation of high efficiency GaAs solar cells

Investigations of basic mechanisms which limit the performance of high efficiency GaAs solar cells are discussed. P/N heteroface structures have been fabricated from MOCVD epiwafers. Typical AM1 efficiencies are in the 21 to 22 percent range, with a SERI measurement for one cell being 21.5 percent. The cells are nominally 1.5 x 1.5 cm in size. Studies have involved photoresponse, T-I-V analyses, and interpretation of data in terms of appropriate models to determine key cell parameters. Results of these studies are utilized to determine future approaches for increasing GaAs solar cell efficiencies.

Olsen, Larry C.↗
NASA NTRS1989

Chemical etching and organometallic chemical vapor deposition on varied geometries of GaAs

Results of micron-spaced geometries produced by wet chemical etching and subsequent OMCVD growth on various GaAs surfaces are presented. The polar lattice increases the complexity of the process. The slow-etch planes defined by anisotropic etching are not always the same as the growth facets produced during MOCVD deposition, especially for deposition on higher-order planes produced by the hex groove etching.

Bailey, Sheila G.↗
NASA NTRS1989

Status of GaAs solar cell production

Recent experience in producing GaAs solar cells, to meet the full requirements of space-array manufacturers is reviewed. The main problems have been in extending MOCVD technology to provide high throughput of high quality epitaxial layers, and to integrate the other important factors needed to meet the full range of user requirements. Some discussion of evolutionary changes is also given.

Yeh, Milton↗
NASA NTRS1989

Gallium Arsenide welded panel technology for advanced spaceflight applications

A significant impediment to the widespread use of GaAs solar cells in space is the cost and weight of the GaAs substrate. In order to overcome these problems, Spectrolab is pursuing thin cell technologies encompassing both liquid phase epitaxy (LPE) GaAs on GaAs and MOCVD GaAs on Ge cells. Spectrolab's experience in the manufacture of 4 to 6 mil 2 cm x 4 cm GaAs cells on a LPE production line is discussed. By thinning the cells at a late state of processing, production yields comparable to 12 mil cells have been achieved. Data are presented showing that GaAs cells can be welded without degradation and have achieved minimum average efficiencies of 18 percent AM0, 28 C with efficiencies up to 20 percent. Spectrolab, in conjunction with Spire Corporation has also been pursuing GaAs on Ge cell technology in support of larger area lighter weight power systems. Data are presented showing that individual 2 cm x 2 cm, 8 mil cell efficiencies up to 21.7 percent have been achieved. Efficiencies up to 24 percent AM0 will be possible by optimizing the GaAs/Ge interface. Cells have been welded without degradation using silver interconnects and have been laid down on an aluminum honeycomb/graphite facesheet substrate to produce a small coupon. The efficiency was 18.1 percent at AM0, 28 C.

Lillington, D. R.↗
NASA NTRS1989

Monolithic narrow-linewidth InGaAsP semiconductor laser for coherent optical communications

A design for a monolithic narrow-linewidth InGaAsP diode laser has been developed using a multiple-quantum-well (MQW) extended-passive-cavity distributed-Bragg-reflector (DBR) laser design. Theoretical results indicate that this structure has the potential for a linewidth of 100 kHz or less. To realize this device, a number of the fabrication techniques required to integrate low-loss passive waveguides with active regions have been developed using a DBR laser structure. In addition, the MOCVD growth of InGaAs MQW laser structures has been developed, and threshold current densities as low as 1.6 kA/sq cm have been obtained from broad-stripe InGaAs/InGaAsP separate-confinement-heterostructure MQW lasers.

Palfrey, S. L.↗
NASA NTRS1988

On the two-dimensional modelling of horizontal CVD reactors and its limitations

In order to clarify under what conditions two-dimensional theoretical models can realistically account for the actual growth rate distribution in horizontal CVD reactors, a systematic numerical study was performed, and the results were compared with published experimental data for the MOCVD of gallium arsenide. Three models of increasing complexity were studied. It is shown that two-dimensional models can produce realistic predictions only for reactors with large width-to-height (aspect) ratios, that are operated at subcritical Rayleigh number,i.e., under dominant forced flow conditions. But even then, depending on the carrier gas, thermal (Soret) diffusion must be included in the model. Furthermore, velocity corrections for finite aspect ratios must be made, and buoyancy effects can be significant in the entrance region. On the other hand, the results are relatively insensitive to axial diffusion, temperature dependence of transport properties (versus averaged properties), and an assumed Poiseuille velocity profile (versus a rigorous solution of the velocity field). Yet, boundary layer approximations are prone to give unrealistic results at the low Reynolds numbers typical for CVD operations.

Ouazzani, Jalil↗
NASA NTRS1989

Fabrication of n(+)/p InP solar cells on silicon substrates

InP films were grown by MOCVD on Si GaAs substrates (as well as on InP substrates, included as controls), and were used to fabricate solar cells, using the Spitzer et al. (1987) technique. Contact to the substrate was made with Al-Ti-Pd-Ag to the Si wafers and with Au-Zn alloy to the GaAs wafers, while contract to the front was made with Cr-Au-Ag. Air mass zero efficiencies were found to be 7.1 percent for Si-substrate cells and 9.4 percent for GaAs-substrate cells.

Keavney, C. J.↗
NASA NTRS1990

Upcoming planetary missions and the applicability of high temperature superconductor bolometers

Planetary missions to Mars and beyond can last 11 years and longer, making impractical the use of stored cryogens. Passive radiative coolers and single-stage mechanical coolers remain possibilities. CRAF and CASSINI, both using the newly developed Mariner Mark 2 spacecraft, will be the next outer planet missions after Galileo; they are intended to provide information on the origin and evolution of the solar system. CRAF is a cometary rendezvous mission slated for a 1994 launch. CASSINI has been chosen by ESA and will be launched by a Titan 4/Centaur in 1996. It will fly by Jupiter in 2000, inject an ESA-supplied probe into Titan in 2002, and take data in Saturn orbit from 2002 to 2006. NASA/Goddard is currently developing a prototype Fourier transform spectrometer (CIRS) that will be proposed for the CASSINI mission. The baseline infrared detectors for CIRS are HgCdTe to 16 microns and Schwarz-type thermopiles from 16 to 1000 microns. The far infrared focal plane could be switched from thermopiles to high temperature superconductor (HTS) bolometers between now and 1996. An HTS bolometer could be built using the kinetic inductance effect, or the sharp resistance change at the transition. The transition-edge bolometer is more straightforward to implement and initial efforts at NASA/Goddard are directed to that device. A working device was made and tested in early 1989. It also has somewhat elevated noise levels below 100 Hz. Upcoming efforts will center on reducing the time constant of the HTS bolometer by attempting to deposit an HTS film on a diamond substrate, and by thinning SrTiO3 substrates. Attempts will be made to improve the film quality to reduce th 1/f noise level, and to improve the thermal isolation to increase the bolometer sensitivity. An attempt is being made to deposit good-quality HTS films on diamond films using an MOCVD technique.

Brasunas, J.↗
NASA NTRS1990

LWIR HgCdTe: Innovative detectors in an incumbent technology

HgCdTe is the current material of choice for high performance imagers operating at relatively high temperatures. Its lack of technological maturity compared with silicon and wide-band gap III-V compounds is more than offset by its outstanding IR sensitivity and by the relatively benign effect of its materials defects. This latter property has allowed non-equilibrium growth techniques, metal oxide chemical vapor deposition (MOCVD) and molecular beam epitaxy (MBE), to produce device quality long wavelength infrared (LWIR) HgCdTe even on common substrates like GaAs and GaAs/Si. Detector performance in these exotic materials structures is comparable in many ways with devices in equilibrium-grown material. Lifetimes are similar. RoA values at 77K as high as several hundred have been seen in HgCdTe/GaAs/Si with 9.5 micron cut-off wavelength. HgCdTe/GaAs layers with approx. 15 micron cut-off wavelengths have given average 77K RoAs of greater than 2. Hybrid focal plane arrays have been evaluated with excellent operability.

Tennant, William E.↗
NASA NTRS1990

Linear laser diode arrays for improvement in optical disk recording

The development of individually addressable laser diode arrays for multitrack magneto-optic recorders for space stations is discussed. Three multi-element channeled substrate planar (CSP) arrays with output power greater than 30 mW with linear light vs current characteristics and stable single mode spectra were delivered to NASA. These devices have been used to demonstrate for the first time the simultaneous recording of eight data tracks on a 14-inch magneto-optic erasable disk. The yield of these devices is low, mainly due to non-uniformities inherent to the LPE growth that was used to fabricate them. The authors have recently developed the inverted CSP, based on the much more uniform MOCVD growth techniques, and have made low threshold quantum well arrays requiring about three times less current than the CSP to deliver 30 mW CW in a single spatial mode. The inverted CSP is very promising for use in space flight recorder applications.

Alphonse, G. A.↗
NASA NTRS1991

Improving the Reliability and Modal Stability of High Power 870 nm AlGaAs CSP Laser Diodes for Applications to Free Space Communication Systems

The operating characteristics (power-current, beam divergence, etc.) and reliability assessment of high-power CSP lasers is discussed. The emission wavelength of these lasers was optimized at 860 to 880 nm. The operational characteristics of a new laser, the inverse channel substrate planar (ICSP) laser, grown by metalorganic chemical vapor deposition (MOCVD), is discussed and the reliability assessment of this laser is reported. The highlights of this study include a reduction in the threshold current value for the laser to 15 mA and a degradation rate of less than 2 kW/hr for the lasers operating at 60 mW of peak output power.

Connolly, J. C.↗
NASA NTRS1991

Study of InGaAs based MODFET structures using variable angle spectroscopic ellipsometry

Variable angle spectroscopic ellipsometry was used to estimate the thicknesses of all layers within the optical penetration depth of InGaAs based MODFET structures. Strained and unstrained InGaAs channels were made by MBE on InP substrates and by MOCVD on GaAs substrates. In most cases, ellipsometrically determined thicknesses were within 10 percent of the growth calibration results. The MBE made InGaAs strained layers showed large strain effects, indicating a probable shift in the critical points of their dielectric function toward the InP lattice matched concentration.

Alterovitz, S. A.↗
NASA NTRS1991

High-gain AlGaAs/GaAs double heterojunction Darlington phototransistors for optical neural networks

High-gain MOCVD-grown (metal-organic chemical vapor deposition) AlGaAs/GaAs/AlGaAs n-p-n double heterojunction bipolar transistors (DHBTs) and Darlington phototransistor pairs are provided for use in optical neural networks and other optoelectronic integrated circuit applications. The reduced base doping level used results in effective blockage of Zn out-diffusion, enabling a current gain of 500, higher than most previously reported values for Zn-diffused-base DHBTs. Darlington phototransitor pairs of this material can achieve a current gain of over 6000, which satisfies the gain requirement for optical neural network designs, which advantageously may employ neurons comprising the Darlington phototransistor pairs in series with a light source.

Kim, Jae H.↗
NASA NTRS1991

Production status of GaAs/Ge solar cells and panels

GaAs/Ge solar cells with lot average efficiencies in excess of 18 percent were produced by MOCVD growth techniques. A description of the cell, its performance and the production facility are discussed. Production GaAs/Ge cells of this type were recently assembled into circuits and bonded to aluminum honeycomb panels to be used as the solar array for the British UOSAT-F program.

Smith, B.↗
NASA NTRS1991

GaInP2/GaAs tandem cells for space applications

The monolithic, tunnel-junction-interconnected tandem combination of a GaInP2 top cell and a GaAs bottom cell has achieved a one-sun, AM1.5 efficiency of 27.3 percent. With proper design of the top cell, air mass zero (AM0) efficiencies greater than 25 percent are possible. A description and the advantages of this device for space applications are presented and discussed. The advantages include high-voltage, low-current, two-terminal operation for simple panel fabrication, and high conversion efficiency with low-temperature coefficient. Also, because the active regions of the device are Al-free, the growth of high efficiency devices is not affected by trace levels of O2 or H2O in the MOCVD growth system.

Olson, J. M.↗
NASA NTRS1991

GaAs solar cells for laser power beaming

Efforts to develop GaAs solar cells for coupling to laser beams in the wavelength range of 800 to 840 nm are described. This work was motivated primarily by interests in space-tp-space power beaming applications. In particular, the Battelle Pacific Northwest Laboratories is conducting studies of the utilization of power beaming for several future space missions. Modeling calculations of GaAs cell performance were carried out using PC-1D to determine an appropriate design for a p/n cell structure. Epitaxial wafers were grown by MOCVD and cells fabricated at WSU Tri-Cities. Under simulated conditions, an efficiency of 53 percent was achieved for a cell coupled to 806 nm light at 400 mW/sq cm.

Olsen, Larry C.↗
NASA NTRS1991

Substrate effects on the epitaxial growth of ZnGeP2 thin films by open tube organometallic chemical vapor deposition

Epitaxial ZnGeP2-Ge films have been grown on (111)GaP substrates using MOCVD. The films grown with dimethylzinc to germane flow rate ratio R greater than 10 show mirror-smooth surface morphology. Films grown with R less than 10 show a high density of twinning, including both double position and growth twins. Compared to films grown on (001) GaP substrates, the layers on (111) GaP generally show a higher density of microstructural defects. TEM electron diffraction patterns show that the films grown on (111) GaP substrates are more disordered than films grown on (001) GaP under comparable conditions. The growth rate on (111) GaP substrates is about 2.5 times slower than that on (001) GaP, and films grown on Si substrates show extensive twinning formation. Both TEM and SEM examinations indicate that smooth epitaxial overgrowth may be easier on (111) Si substrates than on (001) Si.

Xing, G. C.↗
NASA NTRS1991

Upcoming planetary missions and the applicability of high temperature superconductor bolometers

Planetary missions to Mars and beyond can last 11 years and longer, making impractical the use of stored cryogens. Passive radiative coolers and single-stage mechanical coolers remain possibilities. Cassini and Comet Rendezvous/Asteroid Fly-by (CRAF), both using the newly developed Mariner Mark 2 spacecraft, will be the next outer planet missions after Galileo; they are intended to provide information on the origin and evolution of the solar system. CRAF is slated for a 1994 launch. Cassini was chosen by ESA and will be launched by a Titan 4/Centaur in 1996. It will fly by Jupiter in 2000, inject an ESA-supplied probe into Titan in 2002, and take data in Saturn's orbit from 2002 to 2006. NASA/Goddard is currently developing a prototype Fourier transform spectrometer, the Composite Infrared Spectrometer (CIRS), for the Cassini mission. The baseline infrared detectors for CIRS are HgCdTe to 16 microns and Schwarz-type thermopiles from 16 to 1000 microns. The far infrared focal plane could be switched from thermopiles to high temperature superconductor (HTS) bolometers between now and 1996. An HTS bolometer could be built using the kinetic inductance effect, or the sharp resistance change at the transition. The transition-edge bolometer is more straightforward to implement, and initial efforts at NASA/Goddard are directed to that device. A working device was made and tested in early 1989. It also has somewhat elevated noise levels below 100 Hz. Upcoming efforts will center on reducing the time constant of the HTS bolometer by attempting to deposit an HTS film on a diamond substrate, and by thinning SrTiO3 substrates. Attempts will be made to improve the film quality to reduce the 1/4 noise level, and to improve the thermal isolation to increase the bolometer sensitivity. An attempt is being made to deposit good-quality HTS films on diamond films using a metal-organic chemical vapor deposition (MOCVD) technique.

Brasunas, J.↗