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At least 181 records · Page 10

Endotaxial growth of CoSi2 within (111) oriented Si in a molecular beam epitaxy system

A new mode of growth is reported in which buried metallic layers can be fabricated within a single-crystal semiconductor through preferential subsurface growth on previously-grown 'seed' regions. The deposition of Co at 800 C at a rate of 0.01 nm/s on (111) Si substrates containing buried CoSi2 columns 40-100 nm below the Si surface results in the growth and coalescence of these subsurface columns. The formation of a CoSi2 layer on the Si surface is suppressed by this growth mode. It is proposed that the high diffusion rate of Co at 800 C, coupled with the high growth rate of CoSi2 at the subsurface columns, is responsible for this preferred 'endotaxial' growth mode. This growth technique was used to produce a continuous buried single-crystal layer of CoSi2 under a single-crystal Si capping layer.

George, T.↗

Interfacial stability of CoSi2/Si structures grown by molecular beam epitaxy

The stability of CoSi2/Si interfaces was examined in this study using columnar silicide structures grown on (111) Si substrates. In the first set of experiments, Co and Si were codeposited using MBE at 800 C and the resulting columnar silicide layer was capped by epitaxial Si. Deposition of Co on the surface of the Si capping layer at 800 C results in the growth of the buried silicide columns. The buried columns grow by subsurface diffusion of the deposited Co, suppressing the formation of surface islands of CoSi2. The column sidewalls appear to be less stable than the top and bottom interfaces, resulting in preferential lateral growth and ultimately in the coalescence of the columns to form a continuous buried CoSi2 layer. In the second set of experiments, annealing of a 250 nm-thick buried columnar layer at 1000 C under a 100 nm-thick Si capping layer results in the formation of a surface layer of CoSi2 with a reduction in the sizes of the CoSi2 columns. For a sample having a thicker Si capping layer the annealing leads to Ostwald ripening producing buried equiaxed columns. The high CoSi2/Si interfacial strain could provide the driving force for the observed behavior of the buried columns under high-temperature annealing.

George, T.↗

Columnar and subsurface silicide growth with novel molecular beam epitaxy techniques

We have found novel growth modes for epitaxial CoSi2 at high temperatures coupled with Si-rich flux ratios or low deposition rates. In the first of these modes, codeposition of metal and Si at 600-800 C with excess Si leads to the formation of epitaxial silicide columns surrounded by single-crystal Si. During the initial stages of the deposition, the excess Si grows homoepitaxially in between the silicide, which forms islands, so that the lateral growth of the islands is confined. Once a template layer is established by this process, columns of silicide form as a result of selective epitaxy of silicide on silicide and Si on Si. This growth process allows nanometer control over silicide particles in three dimensions. In the second of these modes, a columnar silicide seed layer is used as a template to nucleate subsurface growth of CoSi2. With a 100 nm Si layer covering CoSi2 seeds, Co deposited at 800C and 0.01 nm/s diffuses down to grow on the buried seeds rather than nucleating surface silicide islands. For thicker Si caps or higher deposition rates, the surface concentration of Co exceeds the critical concentration for nucleation of islands, preventing this subsurface growth mode from occurring. Using this technique, single-crystal layers of CoSi2 buried under single-crystal Si caps have been grown.

Fathauer, R. W.↗

Advanced Si IR detectors using molecular beam epitaxy

SiGe/Si heterojunction internal photoemission (HIP) long wavelength infrared (LWIR) detectors have been fabricated by MBE. The SiGe/Si HIP detector offers a tailorable spectral response in the long wavelength infrared regime by varying the SiGe/Si heterojunction barrier. Degenerately doped p(+) SiGe layers were grown using elemental boron, as the dopant source allows a low growth temperature. Good crystalline quality was achieved for boron-doped SiGe due to the reduced growth temperature. The dark current density of the boron-doped HIP detectors was found to be thermionic emission limited. HIP detectors with a 0.066 eV were fabricated and characterized using activation energy analysis, corresponding to a 18 micron cutoff wavelength. Photoresponse of the detectors at wavelengths ranging from 2 to 12 microns has been characterized with corresponding quantum efficiencies of 5 - 0.1 percent.

Lin, T. L.↗

Molecular-beam spectrum of the 970/cm Fermi triad of CF3CH3

A tunable MW-sideband CO2 laser is used with an electric-resonance optothermal spectrometer to investigate the IR spectrum of CF3CH3 near 970/cm. A Fermi-coupled triad of states is observed, resulting from the interactions of 2nu6+nu11 and nu5+nu12 with the fundamental vibration, nu10, which is assumed to carry the oscillator strength in this region. The high resolution (about 3 MHz) of the spectrometer allows the observation of tunneling splittings associated with the nu6 torsional vibration. These splittings are used to identify the torsional character of the states observed. At the normal-mode level the nu10 and nu5+nu12 states are found to be nearly degenerate and interacting by an anharmonic matrix element of about 3/cm. The present investigation illustrates the utility of using resolved torsional splittings to unravel complex vibrational couplings in molecules.

Fraser, G. T.↗

Theoretical studies of a molecular beam generator

At present no adequate computer code exists for predicting the effects of thermal nonequilibrium on the flow quality of a converging-diverging N2 nozzle. It is the purpose of this research to develop such a code and then perform parametric studies to determine the effects of intermolecular forces (high gas pressure) and thermal nonequilibrium (the splitting of temperature into a vibrational and rotational-translational excitation) upon the flow quality. The two models to be compared are given. Appendix A contains nomenclature and additional relationships.

Heinbockel, John↗

Theoretical studies of a molecular beam generator

We consider the problem of modeling a high temperature diatomic gas N2 flowing through a converging-diverging high expansion nozzle. The problem is modeled in two ways. The first model uses a single temperature with variable specific heats as functions of this temperature. For the second model we assume that the various degrees of freedom all have a Boltzmann population distribution which means that each degree of freedom has its own temperature and consequently each system state can be characterized by these temperatures. This suggests the formulation of a second model with a vibrational degree of freedom as having its own temperature along with a rotational-translational degree of freedom with its own temperature. Initially the vibrational degree of freedom is excited by heating the gas to a high temperature. As the high temperature gas expands through the nozzle throat there is a sudden drop in the rotational-translational temperature along with a finite relaxation time for the vibrational degree of freedom to achieve equilibrium with the rotational-translational degree of freedom. That is, the temperature change that occurs when the N2 gas passes through the nozzle throat is so great that the changes in the vibrational degree of freedom lags behind the rotational-translational energy changes. The resulting relaxation time is finite. It is in this context that the term nonequilibrium is used. That is, the term nonequilibrium denotes the fact that the energy content of the various degrees of freedom are characterized by two temperatures. We neglect any chemical reactions resulting from the high temperatures which could also add nonequilibrium effects. We develop the basic equations for the two models in various forms in order to check the derivations with other sources. The final form which is solved numerically consists of the scaled equations in a conservative dimensionless form.

Heinbockel, John H.↗

Wind tunnel mass spectrometer design study

The sampling probe to measure the free stream gas composition in a hypersonic wind tunnel is described. Using a free expansion of the continuum flow, a series of sampling inlet-pumping stages is evaluated. Mass analysis is carried out with a quadrupole mass spectrometer employing a crossed electron beam, molecular beam ion source, and an off-axis electron multiplier. The spatial distribution of the sampled molecular flux and the pumping requirements are evaluated for varying inlet conditions of gas density and flow velocity. The signal-to-noise ratio of the molecular beam formed by this series of coaxial inlets is also determined. The signal-to-noise ratio of the unscattered flux is sufficiently high that an unambiguous determination of the beam composition and of the free stream gas properties can be made. The magnitude of the detected signal is sufficiently high that measurement of trace constituents two orders of magnitude below the primary beam signal can be made.

Hueser, J. E.↗

Experimental differential and integral electron impact cross sections for the B /1-Sigma-u +/ state of H2 in the intermediate-energy region

Utilizing a crossed electron-beam-molecular-beam scattering technique, differential electron impact cross sections (DCS) for the excitation of the nu prime = 2 vibrational band of the B (1-Sigma-u +) state of H2 have been measured and are presented for the first time. These measurements were made at electron impact energies of 15, 20, 30, 40, 50 and 60 eV. At each energy, DCS between scattering angles of 10 and 135 deg were determined. They were then extrapolated to 0 and 180 deg scattering angles to obtain the integral cross sections. These integral cross sections and the Frank-Condon factor for the nu prime = 2 band were used to calculate the total cross sections for the excitation of the B (1-Sigma-u +).

Srivastava, S. K.↗

Absolute elastic differential electron scattering cross sections in the intermediate energy region. IV - CO

Using a crossed electron beam-molecular beam scattering geometry and a relative-flow technique, ratios of elastic differential cross sections of CO to those of He have been measured at electron impact energies of 3, 5, 7.5, 9.9, 15, 20, 30, 50, 75, and 100 eV. At each energy, an angular range of 15 to 130 deg has been covered. These ratios have been multiplied by previously known He elastic differential cross sections to obtain elastic differential cross sections for CO. Since pure rotational excitations were not resolved, the elastic differential cross sections are a sum of elastic and pure rotational excitations at room temperature. From a knowledge of differential cross sections (DCS), integral and momentum transfer cross sections have been calculated. Both the DCS and integral cross sections are compared at 50, 75, and 100 eV to a recent two-potential theory of e-molecule scattering. Present results show that the isoelectronic molecules CO and N2 have very similar magnitudes and shapes of their differential cross sections.

Tanaka, H.↗

Cross section for Ly-alpha emission by electron impact on methane

Utilizing Lyman-alpha emission cross sections for H2 as secondary standards, absolute values of Lyman-alpha emission cross sections for CH4 have been obtained for electron impact energies varying from threshold to 100 eV. A crossed electron beam-molecular beam geometry was employed and the Lyman-alpha radiation was detected at 90 deg and 45 deg with respect to the incident electron beam by a solar blind photomultiplier in tandem with an oxygen filter. The results are compared with previous measurements. Appreciable differences among the various experimental data are found.

Orient, O. J.↗