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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 181 records · Page 10
All sourcesNASA NTRSDOE OSTI
NASA NTRS2017

4-Pixel Heterodyne Receiver at 1.9 THz using a CMOS Spectrometer

We present results from a 4x1-pixel 1.9 THz heterodyne array for the astrophysically important [CII] spectral line. A 4-pixel multiplier chain at 1.9 THz, with a compact spacing of 5 mm, is used as an LO. Receiver performance is verified by y-factor measurements with measured sensitivities of 900 K. Finally, using a coherent source near the target frequency of 1.9 THz, we down convert to baseband and measure spectra with both an IBOB and a new CMOS-based spectrometer. The CMOS spectrometer provides several advantages over more traditional spectrometers because of its compact size and low power consumption. This receiver prototype is easily scalable to other frequencies and larger focal plane arrays. Furthermore, because of its compact configuration, it can be easily packaged for orbital or sub-orbital missions.

Mehdi, Imran↗
NASA NTRS2023

A Multi-Pixel Split-Window Approach to Sea Surface Temperature Retrieval from Thermal Imagers with Relatively High Radiometric Noise: Preliminary Studies

In the following decade(s), a set of satellite missions carrying thermal infrared (TIR) imagers with a relatively high noise equivalent differential temperature (NEdT) are expected, e.g., the high resolution TIR imagers flying on the future Thermal infraRed Imaging Satellite for High-resolution Natural resource Assessment (TRISHNA), Land Surface Temperature Monitoring (LSTM) and NASA-JPL/ASI Surface Biology and Geology Thermal (SBG) missions or the secondary payload on board the ESA Earth Explorer 10 Harmony. The instruments on board these missions are expected to be characterized by an NEdT of ⪆0.1 K. In order to reduce the impact of radiometric noise on the retrieved sea surface temperature (SST), this study investigates the possibility of applying a multi-pixel atmospheric correction based on the hypotheses that (i) the spatial variability scales of radiatively active atmospheric variables are, on average, larger than those of the SST and (ii) the effect of atmosphere is accounted for via the split window (SW) difference. Based on 32 Sentinel 3 SLSTR case studies selected in oceanic regions where SST features are mainly driven by meso to sub-mesoscale turbulence (e.g., corresponding to major western boundary currents), this study documents that the local spatial variability of the SW difference term on the scale of ≃3 × 3 km2 is comparable with the noise associated with the SW difference. Similarly, the power spectra of the SW term are shown to have, for small scales, the behavior of white noise spectra. On this basis, we suggest to average the SW term and to use it for the atmospheric correction procedure to reduce the impact of radiometric noise. In principle, this methodology can be applied on proper scales that can be dynamically defined for each pixel. The applicability of our findings to high-resolution TIR missions is discussed and an example of an application to ECOSTRESS data is reported.

sea surface temperature↗
DOE OSTI2026

Low power on-chip data transmission for wafer-scale monolithic active pixel sensors

Here, this paper details the implementation of the digital pulse shaping subsystem within the Backbone Transmission Line Encoding (BTLE) driver, a low-power, long-distance on-chip data transmission solution designed in a 65 nm CMOS process. Digital pulse shaping is critical for minimizing inter-symbol interference (ISI) caused by bandwidth limitations of on-chip interconnects, especially in wafer-scale monolithic active pixel sensors (MAPS). A duobinary encoder coupled with a parallelized polyphase finite impulse response (FIR) filter is used for efficient shaping of the transmitted signal spectrum. This reconfigurable architecture achieves reliable 160 Mb/s data transfer over a 10 cm on-chip link, as validated by simulations demonstrating low power consumption (FoM 37.3 fJ/bit/mm of transmission line length) and effective ISI mitigation.

47 OTHER INSTRUMENTATION↗
NASA NTRS1996

CMOS Active Pixel Sensors for Low Power, Highly Miniaturized Imaging Systems

The complementary metal-oxide-semiconductor (CMOS) active pixel sensor (APS) technology has been developed over the past three years by NASA at the Jet Propulsion Laboratory, and has reached a level of performance comparable to CCDs with greatly increased functionality but at a very reduced power level.

CMOS complementary metal-oxide-semiconductor activ↗
NASA NTRS1994

Development of CMOS Active Pixel Image Sensors for Low Cost Commercial Applications

This paper describes ongoing research and development of CMOS active pixel image sensors for low cost commercial applications. A number of sensor designs have been fabricated and tested in both p-well and n-well technologies. Major elements in the development of the sensor include on-chip analog signal processing circuits for the reduction of fixed pattern noise, on-chip timing and control circuits and on-chip analog-to-digital conversion (ADC). Recent results and continuing efforts in these areas will be presented.

active pixel image sensors CMOS signal processing ↗
NASA NTRS1994

Development of CMOS Active Pixel Image Sensors for Low Cost Commercial Applications

JPL, under sponsorship from the NASA Office of Advanced Concepts and Technology, has been developing a second-generation solid-state image sensor technology. Charge-coupled devices (CCD) are a well-established first generation image sensor technology. For both commercial and NASA applications, CCDs have numerous shortcomings. In response, the active pixel sensor (APS) technology has been under research. The major advantages of APS technology are the ability to integrate on-chip timing, control, signal-processing and analog-to-digital converter functions, reduced sensitivity to radiation effects, low power operation, and random access readout.

solid-state image sensors active pixel sensor APS ↗
NASA NTRS1996

Programmable Multiresolution CMOS Active Pixel Sensor

CMOS active pixel sensors (APS) allow the flexibility of placing signal processing circuitry on the imaging focal plane. The multiresolution CMOS APS can perform block averaging on-chip to eliminate the off-chip software intensive image processing. This 128 x 128 APS array can be read out at any user-defined resolution by configuring a set of digital shift registers. The resolution frame rate is 30 Hz with higher rates for all other image resolutions.

APS↗
NASA NTRS1997

Monolithic InGaAs JFET Active Pixel Tunable Image Sensor (MAPTIS)

A new Monolithic InGaAs Active Pixel Multispectral Image Sensor is described. This Infrared sensor will utilize high quality InGaAs grown by Molecular Beam Epitaxy on InP substrate for the fabrication of a high speed Junction Field Effect Transistor array.

hyper↗
NASA NTRS1996

256X256 CMOS Active Pixel Sensor Camera-on-a-Chip

A CMOS imaging sensor is described that uses active pixel sensor (APS) technology which permits the integration of the detector array with on-chip timing, control and signal chain electronics. This sensor has been used to implement a CMOS APS camera-on-a-chip.

active↗