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At least 181 records · Page 10

Self-consistent calculations and design considerations for a GaAs nipi doping superlattice solar cell

The authors present design constraints which show that a previously proposed GaAs nipi doping superlattice solar cell structure would not work as an efficient space solar cell. A structure based on the CLEFT process, which shows promise of being an efficient cell with very high radiation tolerance, is proposed. In order to test theoretically its viability and to optimize its design, self-consistent quantum mechanical calculations were made for a number of thicknesses of the n, i, and p layers and the dopings in the n and p layers. These results show that: 1) an i layer is not necessary; in fact, its presence makes it difficult to satisfy one of the key constraints; 2) a near-optimum design with 750-A thick n and p layers with dopings of 2.5E18/cu cm and a selective contact separation of 20 microns would yield both high efficiency and very high radiation tolerance.

Clark, Ralph O.↗

Response of single junction GaAs/GaAs and GaAs/Ge solar cells to multiple doses of 1 MeV electrons

A comparison of the radiation tolerance of MOCVD-grown GaAs cells and GaAs/Ge cells was undertaken using 1 MeV electrons. The GaAs/Ge cells are somewhat more tolerant of 1 MeV electron irradiation and more responsive to annealing than are the GaAs/GaAs cells examined in this study. However, both types of cells suffer a greater degradation in efficiency than has been observed in other recent studies. The reason for this is not certain, but it may be associated with an emitter thickness which appears to be greater than desired. The deep level transient spectroscopy (DLTS) spectra following irradiation are not significantly different for the GaAs/Ge and the GaAs/GaAs cells, with each having just two peaks. The annealing behavior of these peaks is also similar in the two samples examined. It appears that no penalty in radiation tolerance, and perhaps some benefit, is associated with fabricating MOCVD GaAs cells on Ge substrates rather than GaAs substrates.

Meier, D. L.↗

Development of a lightweight, light-trapped, thin GaAs solar cell for spacecraft applications

This paper describes ultra-lightweight, high performance, thin, light trapping GaAs solar cells for advanced space power systems. The device designs can achieve 24.5 percent efficiency at AMO and 1X conditions, corresponding to a power density of 330 W/m2. A significant breakthrough lies in the potential for a specific power of 2906 W/kg because the entire device is less than 1.5 microns thick. This represents a 440 percent improvement over conventional 4-mil silicon solar cells. In addition to being lightweight, this thin device design can result in increased radiation tolerance. The attachment of the cover glass support to the front surface has been demonstrated by both silicone and electrostatic bonding techniques. Device parameters of 1.002 volts open-circuit voltage, 80 percent fill factor, and a short-circuit current of 24.3 mA/sq cm have been obtained. This demonstrates a conversion efficiency of 14.4 percent resulting in a specific power of 2240 W/kg. Additionally, this new technology offers an alternative approach for enabling multi-bandgap solar cells and high output space solar power devices. The thin device structure can be applied to any 3-5 based solar cell application, yielding both an increase in specific power and radiation tolerance.

Hannon, Margaret H.↗

Environmental Conditions for Space Flight Hardware: A Survey

Interest in generalization of the physical environment experienced by NASA hardware from the natural Earth environment (on the launch pad), man-made environment on Earth (storage acceptance an d qualification testing), the launch environment, and the space environment, is ed to find commonality among our hardware in an effort to reduce cost and complexity. NASA is entering a period of increase in its number of planetary missions and it is important to understand how our qualification requirements will evolve with and track these new environments. Environmental conditions are described for NASA projects in several ways for the different periods of the mission life cycle. At the beginning, the mission manager defines survivability requirements based on the mission length, orbit, launch date, launch vehicle, and other factors . such as the use of reactor engines. Margins are then applied to these values (temperature extremes, vibration extremes, radiation tolerances, etc,) and a new set of conditions is generalized for design requirements. Mission assurance documents will then assign an additional margin for reliability, and a third set of values is provided for during testing. A fourth set of environmental condition values may evolve intermittently from heritage hardware that has been tested to a level beyond the actual mission requirement. These various sets of environment figures can make it quite confusing and difficult to capture common hardware environmental requirements. Environmental requirement information can be found in a wide variety of places. The most obvious is with the individual projects. We can easily get answers to questions about temperature extremes being used and radiation tolerance goals, but it is more difficult to map the answers to the process that created these requirements: for design, for qualification, and for actual environment with no margin applied. Not everyone assigned to a NASA project may have that kind of insight, as many have only the environmental requirement numbers needed to do their jobs but do not necessarily have a programmatic-level understanding of how all of the environmental requirements fit together.

Plante, Jeannette↗

Irradiation-induced shift in the thermodynamic stability of phases and the self-healing effect in transformative high entropy alloys

Here, this work investigated Fe 40 Mn 20 Cr 15 Co 20 Si 5 high entropy alloy (CS-HEA), which exhibits transformation induced plasticity (TRIP) from γ-fcc → ε-hcp, as a probable candidate for nuclear applications. CS-HEA is an extensively-explored, low stacking fault energy alloy with superior strength, ductility, fatigue resistance, and corrosion resistance. This study delved into the effect of irradiation on the shift in thermodynamic stability of the phases and thus radiation tolerance. The evolution of phases, lattice parameters, and transformation volume, V γ→ε , were evaluated from X-ray diffraction experiments along with the mechanical response from nanoindentation. The alloy exhibited a recently-proposed novel self-healing mechanism possible due to the TRIP effect to minimize irradiation damage by restraining the γ-fcc → ε-hcp transformation via thermal aid; this self-healing mechanism was confirmed by transmission electron microscopy. The results were corroborated by a negative change in V γ→ε and a low |V γ→ε |, which is an important criterion for recovery of parent γ-fcc phase. Thus, this alloy was deemed a good radiation-tolerant candidate for nuclear application.

36 MATERIALS SCIENCE↗

Effects of fast and thermal neutron irradiation on Ga-polar and N-polar GaN diodes

Studies of the radiation tolerance and electrical behavior of gallium nitride (GaN) based devices are important for the next generation of high-power and high-voltage electronics that may be subjected to harsh environments such as nuclear reactor and fusion facilities, particle accelerators, and post-denotation environments. Here, in this work, we study the behavior of Ga-polar and N-polar GaN Schottky diodes before and after exposure to fast and thermal + fast neutrons. Temperature-dependent current–voltage (I–V) and circular transmission line method (CTLM) measurements were used to study the electrical characteristics. A strong reduction in reverse leakage current and an increase in differential resistance in forward bias were observed after neutron irradiation. Thermionic emission (TE), Frenkel–Poole (FP) emission, and Fowler–Nordheim (FN) tunneling models were used to explain the forward and reverse I–V characteristics pre- and post-irradiation. The study confirms that Ga-polar and N-polar GaN Schottky diodes exhibit different electrical responses to fast and thermal neutron irradiations. The reverse bias characteristics of N-polar diodes are less affected after the fast neutron irradiation compared to Ga-polar diodes, while in the forward bias region, the electrical behavior after fast and thermal neutron irradiations is similar in Ga-polar and N-polar diodes. The results indicate that the role of orientation should be considered in the design of GaN-based radiation-tolerant electronics.

42 ENGINEERING↗

Implementation of Adaptive Digital Controllers on Programmable Logic Devices

Much has been made of the capabilities of FPGA's (Field Programmable Gate Arrays) in the hardware implementation of fast digital signal processing (DSP) functions. Such capability also makes and FPGA a suitable platform for the digital implementation of closed loop controllers. There are myriad advantages to utilizing an FPGA for discrete-time control functions which include the capability for reconfiguration when SRAM- based FPGA's are employed, fast parallel implementation of multiple control loops and implementations that can meet space level radiation tolerance in a compact form-factor. Other researchers have presented the notion that a second order digital filter with proportional-integral-derivative (PID) control functionality can be implemented in an FPGA. At Marshall Space Flight Center, the Control Electronics Group has been studying adaptive discrete-time control of motor driven actuator systems using digital signal processor (DSF) devices. Our goal is to create a fully digital, flight ready controller design that utilizes an FPGA for implementation of signal conditioning for control feedback signals, generation of commands to the controlled system, and hardware insertion of adaptive control algorithm approaches. While small form factor, commercial DSP devices are now available with event capture, data conversion, pulse width modulated outputs and communication peripherals, these devices are not currently available in designs and packages which meet space level radiation requirements. Meeting our goals requires alternative compact implementation of such functionality to withstand the harsh environment encountered on spacecraft. Radiation tolerant FPGA's are a feasible option for reaching these goals.

Gwaltney, David A.↗

A Reconfigurable Neural Network ASIC for Detector Front-End Data Compression at the HL-LHC

Despite advances in the programmable logic capabilities of modern trigger systems, a significant bottleneck remains in the amount of data to be transported from the detector to off-detector logic where trigger decisions are made. We demonstrate that a neural network (NN) autoencoder model can be implemented in a radiation-tolerant application-specific integrated circuit (ASIC) to perform lossy data compression alleviating the data transmission problem while preserving critical information of the detector energy profile. For our application, we consider the high-granularity calorimeter from the Compact Muon Solenoid (CMS) experiment at the CERN Large Hadron Collider. The advantage of the machine learning approach is in the flexibility and configurability of the algorithm. By changing the NN weights, a unique data compression algorithm can be deployed for each sensor in different detector regions and changing detector or collider conditions. To meet area, performance, and power constraints, we perform quantization-aware training to create an optimized NN hardware implementation. The design is achieved through the use of high-level synthesis tools and the hls4ml framework and was processed through synthesis and physical layout flows based on a low-power (LP)-CMOS 65-nm technology node. The flow anticipates 200 Mrad of ionizing radiation to select gates and reports a total area of 3.6 mm 2 and consumes 95 mW of power. The simulated energy consumption per inference is 2.4 nJ. Furthermore, this is the first radiation-tolerant on-detector ASIC implementation of an NN that has been designed for particle physics applications.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗

Unveiling and Mapping Polymorphs in Fluorite Y2TiO5 Using 4D-STEM and Unsupervised Machine Learning

Y2TiO5 belongs to the Ln2TiO5 (Ln = lanthanide or Y) family of ceramic materials and exhibits a range of desirable material properties such as radiation tolerance, frustrated magnetism, and large dielectric constant. However, understanding the complex crystal structure of Y2TiO5 remains elusive, given that Y2TiO5 can adopt multiple polymorphs such as cubic, orthorhombic, and hexagonal phases within the lattice. In this work, we report a detailed structural analysis of Y2TiO5 using four-dimensional scanning transmission electron microscopy coupled with unsupervised machine learning. The pyrochlore nanodomains, characterized by the ordered arrangement of yttrium cations on the A site of their A2BO5 structure, are present within the matrix of a predominantly fluorite-structured Y2TiO5 along with a third polymorph, the hexagonal phase. The pyrochlore phase is found to form 2 nm boundary regions around hexagonal phase stacking faults, highlighting the potential influence of the hexagonal phase on the occurrence and distribution of the pyrochlore phase. Lastly, we identify a unique pyrochlore phase with asymmetric arrangement of cation ordering along a single planar direction. Our findings provide invaluable insights into the possible mechanisms stabilizing pyrochlore nanodomains within the fluorite lattice of Y2TiO5.

36 MATERIALS SCIENCE↗

A SiPM-based optical readout system for the EIC dual-radiator RICH

Silicon photomultipliers (SiPM) are candidates selected as the potential photodetector technology for the dual-radiator Ring-Imaging Cherenkov (dRICH) detector at the future Electron-Ion Collider (EIC). SiPM are cheap devices, highly efficient and insensitive to the high magnetic field at the expected location of the sensors in the experiment. Here, on the other hand, SiPM are not radiation tolerant. Despite the integrated radiation level is expected to be moderate it should be tested whether single photon-counting capabilities and the increase in dark count rate can be kept under control to maintain the optimal dRICH detector performance across the years. The current status of the research for the EIC dRICH application and the first results on studies performed on a sample of commercial and prototype SiPM sensors are presented.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗

Solid state microelectronics tolerant to radiation and high temperature

The 300 C electronics technology based on JFET thick film hybrids was tested up to 10 to the 9th power rad gamma (Si) and 10 to the 15th power neutrons/sq cm. Circuits and individual components from this technology all survived this total dose although some devices required 1 hour of annealing at 200 or 300 C to regain functionality. This technology used with real time annealing should function to levels greater than 10 to the 10th power rad gamma and 10 to the 16th power n/sq cm.

Draper, B. L.↗

Puncture-Tolerant Heat Radiator

Heat radiator does not lose coolant through small punctures and does not require heavy, cumbersome shielding as protection against punctures. Small holes in radiator cause no outpouring of coolant; only small amount evaporates through hole leaves system. Film of silicone oil flows along interior surface of aluminum shell, transferring much of its heat to shell and outside. Unit provides cooling for 100-kW nuclear powerplant.

Elliott, D. G.↗

Solid State Drive Radiation Assurance With Active Testing

Automotive and industrial grade SSDs were tested for TID and SEE response at the assembly level to investigate radiation tolerance trends and explore radiation hardness assurance best practices in commercial memory devices. SSDs were installed in passive NVMe extenders to place only the drive in the beam line. A digital I/O module connected to the test computer provided inhibit signals to block both facility beam delivery and power while attempting recovery from any device failure conditions (e.g., failed write, failed read, or unresponsive device).

Edward P Wilcox↗

A Radiation-Hard 8-Channel 15-Bit 40-MSPS ADC for the ATLAS Liquid Argon Calorimeter Readout

The custom design of a radiation-hardened, 8-channel, 40-MSPS, 15-bit resolution, 14.2-bit dynamic range, 11.4-ENOB ADC data acquisition ASIC fabricated in a commercial 65-nm triple-well CMOS technology is presented. The ADC is developed for and integrates seamlessly into the readout system for the ATLAS liquid argon (LAr) calorimeter in the high-luminosity large hadron collider (HLLHC) upgrade at CERN, which will require a total of 364 936 ADC channels. A three-stage MDAC+SAR pipelined ADC architecture was designed to meet the physics requirements and scientific goals of the ATLAS experiment. The ADC is a fully self-contained data acquisition system that includes foreground calibration, digital data processing, digital control, and supporting circuitry. The measured performance shows the ADC achieves a competitive dynamic range and SNDR, and it meets or exceeds the ATLAS analog requirements. Radiation tolerance and scalability design considerations were implemented at the device-, circuit-, and system-level. Radiation-hardening-by-design techniques used include redundancy for digital circuits, the use of MiM capacitors, and a hybrid RC-DAC for the ADC core. The ADC ASIC was demonstrated to be robust against the effects of the intense radiation expected in the HL-LHC experimental environment.

DAQ↗

Status Report on the Development of Cladding Inner-wall and Outer-wall Coatings

Advanced cladding is critical for nuclear reactors with enhanced performance in radiation tolerance, neutron transparency and reactor safety. Using advanced cladding will ensure the adequate thermal conductivity and mechanical stability of the cladding base material, corrosion resistance and high-temperature coolant compatibility of the cladding surface, and chemical stability in the cladding inner wall against fuel cladding chemical interaction (FCCI). An innovative cladding with a three-layer structure (i.e., a modified outer surface, a robust clad base material, and a modified inner wall) promises to meet all these requirements. In this status report, the initial efforts on the development of cladding inner-wall and outer-wall coatings are summarized. The activities covered in this report are (1) High-resolution TEM studies of TiN/HT-9 interface atomic structure and chemistry after ion irradiation, (2) High-resolution TEM studies of TiN/14YWT ODS interface atomic structure after thermal cycling, (3) Inner-wall TiN coating for an experimental 14YWT ODS cladding, and (4) Corrosion test of TiN coated Ziracloy-4 bar samples.

36 - MATERIALS SCIENCE↗

Radiation Effects in III-V Solar Cells Grown by Dynamic Hydride Vapor Phase Epitaxy

The recent development of hydride vapor phase epitaxy (HVPE) is potentially promising as a route to lower the cost of high-efficiency III-V solar cells for space applications. HVPE produces the same materials and device structures as the industry-standard organometallic vapor phase epitaxy (OMVPE) process, and although HVPE has shown promising device efficiencies, it lags the OMVPE growth technique in technical maturity. For example, there are no reports of the performance of HVPE-grown devices in radiation environments. There is an expectation that high-quality (that is, single crystal and low-defect) III-V materials will behave similarly regardless of the growth method. However, it is important to verify assumptions as facts. In this project, we produced materials and devices using both HVPE and OMVPE at NREL and irradiated them using 1 MeV electrons to ascertain the effect of radiation on the materials. We also performed initial work on producing more radiation-hard structures, including devices with the pn junction at the front of the device, and devices with a graded doping profile, both of which help with radiation tolerance. Measurements of the devices post radiation exposure showed that the open-circuit voltage (V OC ) of the HVPE-grown solar cells degraded least on a percent basis, although they also started from a lower baseline than the OMVPE-grown devices. All solar cells reached approximately the same V OC after irradiation, indicating that the dose used was sufficient to degrade all device equally. The short-circuit current in the HVPE devices did degrade more than the other solar cells, and this was attributed to a higher-than-expected doping density in the base layer of that cell. The results of these experiments, while by no means comprehensive, do not show any material difference in the radiation effects in OMVPE- and HVPE-grown materials and devices.

14 SOLAR ENERGY↗

Radiation and Fault Tolerance for Neuromorphic Computing

• The solar wind emanating from the sun is a stream of energetic electrons and protons and ions that are the primary ionizing radiation contributions. • The Earth’s magnetosphere significantly reduces radiation exposure and mutes the effects of solar flares out to 65K Km orbital altitude. • The radiation environment is highly dependent upon mission profile: for example geosynchronous orbits can see 50 times the radiation dose of a polar orbit due to reduction of atmospheric/magnetospheric shielding. • In LEO, the magnetosphere shields the Earth by creating trapped Van Allen radiation belts consisting of electrons and protons, which create a challenging radiation environment confined to specific regions. • Even for LEO, radiation dose can vary by a factor of 30 or more from a quiet sun to a solar flare. • Galactic Cosmic Rays (GCRs) are also present at very high energy, but at low rates. • Radiation effects on semiconductors are highly dependent upon particles species, energy and flux. • Therefore, radiation tolerance requirements will vary with mission profile and duration.

Space Radiation↗

Effects of Proton Irradiation on GaN Vacuum Electron Nanodiodes

Gallium nitride (GaN)-based nanoscale vacuum electron devices, which offer advantages of both traditional vacuum tube operation and modern solid-state technology, are attractive for radiation-hard applications due to the inherent radiation hardness of vacuum electron devices and the high radiation tolerance of GaN. Here, we investigate the radiation hardness of top-down fabricated n-GaN nanoscale vacuum electron diodes (NVEDs) irradiated with 2.5-MeV protons (p) at various doses. We observe a slight decrease in forward current and a slight increase in reverse leakage current as a function of cumulative protons fluence due to a dopant compensation effect. The NVEDs overall show excellent radiation hardness with no major change in electrical characteristics up to a cumulative fluence of 5E14 p/cm 2 , which is significantly higher than the existing state-of-the-art radiation-hardened devices to our knowledge. In conclusion, the results show promise for a new class of GaN-based nanoscale vacuum electron devices for use in harsh radiation environments and space applications.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗