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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 181 records · Page 10
All sourcesNASA NTRSDOE OSTI
NASA NTRS1979

Modeling of thin, back-wall silicon solar cells

The performance of silicon solar cells with p-n junctions on the nonilluminated surface (i.e., upside-down or back-wall cells) was calculated. These structures consisted of a uniformly shaped p-type substrate layer, a p(+)-type field layer on the front (illuminated) surface, and a shallow, n-type junction on the back (nonilluminated) surface. A four-layer solar cell model was used to calculate efficiency, open-circuit voltage, and short-circuit current. The effect on performance of p-layer thickness and resistivity was determined. The diffusion length was varied to simulate the effect of radiation damage. The results show that peak initial efficiencies greater than 15 percent are possible for cell thicknesses or 100 micrometers or less. After 10 years of radiation damage in geosynchronous orbit, thin (25 to 50 micrometers thick) cells made from 10 to 100 ohm cm material show the smallest decrease (approximately 10 percent) in performance.

Baraona, C. R.↗
NASA NTRS1986

Solar-Cell-Junction Processing System

System under development reduces equipment costs. Processing system will produce solar-cell junctions on 4 in. (10.2 cm) round silicon wafers at rate of 10 to seventh power per year. System includes non-mass-analyzed ion implanter, microcomputer-controlled, pulsed-electron-beam annealer, and wafertransport system with vacuum interlock. These features eliminate large, expensive magnet and plates, circuitry, and power source otherwise needed for scanning.

Bunker, S. N.↗
NASA NTRS1986

Process research and development

The following major processes involved in the production of crystalline-silicon solar cells were discussed: surface preparation, junction formation, metallization, and assembly. The status of each of these processes, and the sequence in which these processes are applied, were described as they were in 1975, as they were in 1985, and what they might be in the future.

Bickler, D. B.↗
NASA NTRS1991

Phototransistors For Long-Wavelength Infrared

Phototransistors of proposed new type used to detect photons having wavelengths of 8 to 150 micrometers. Detection based on impurity-to-continuum transitions. Integrated-circuit imaging arrays of such phototransistors useful in infrared remote sensing. Device of this type silicon, germanium, or silicon/germanium phototransistor in which junction between collector and base lightly doped with impurities.

Borenstain, Shmuel I.↗
NASA NTRS1981

Low cost solar array project cell and module formation research area: Process research of non-CZ silicon material

Liquid diffusion masks and liquid applied dopants to replace the CVD Silox masking and gaseous diffusion operations specified for forming junctions in the Westinghouse baseline process sequence for producing solar cells from dendritic web silicon were investigated. The baseline diffusion masking and drive processes were compared with those involving direct liquid applications to the dendritic web silicon strips. Attempts were made to control the number of variables by subjecting dendritic web strips cut from a single web crystal to both types of operations. Data generated reinforced earlier conclusions that efficiency levels at least as high as those achieved with the baseline back junction formation process can be achieved using liquid diffusion masks and liquid dopants. The deliveries of dendritic web sheet material and solar cells specified by the current contract were made as scheduled.

Source record↗
NASA NTRS1985

Potential of thin-film solar cell module technology

During the past five years, thin-film cell technology has made remarkable progress as a potential alternative to crystalline silicon cell technology. The efficiency of a single-junction thin-film cell, which is the most promising for use in flat-plate modules, is now in the range of 11 percent with 1-sq cm cells consisting of amorphous silicon, CuInSe2 or CdTe materials. Cell efficiencies higher than 18 percent, suitable for 15 percent-efficient flat plate modules, would require a multijunction configuration such as the CdTe/CuInSe2 and tandem amorphous-silicon (a-Si) alloy cells. Assessments are presented of the technology status of thin-film-cell module research and the potential of achieving the higher efficiencies required for large-scale penetration into the photovoltaic (PV) energy market.

Shimada, K.↗
NASA NTRS1995

Development of advanced Si and GaAs solar cells for interplanetary missions

The deep space and planetary exploration project have been acquiring more and more importance and some of them are now well established both in ESA and NASA programs. This paper presents the possibility to utilize both silicon and gallium arsenide solar cells as spacecraft primary power source for missions far from the Sun, in order to overcome the drawbacks related to the utilisation of radioisotope thermoelectric generators - such as cost, safety and social acceptance. The development of solar cells for low illumination intensity and low temperature (LILT) applications is carried out in Europe by ASE (Germany) and CISE (Italy) in the frame of an ESA programme, aimed to provide the photovoltaic generators for ROSETTA: the cometary material investigation mission scheduled for launch in 2003. The LILT cells development and testing objectives are therefore focused on the following requirements: insolation intensity as low as 0.03 Solar Constant, low temperature down to -150 C and solar flare proton environment. At this stage of development, after the completion of the technology verification tests, it has been demonstrated that suitable technologies are available for the qualification of both silicon and gallium arsenide cells and both candidates have shown conversion efficiencies over 25% at an illumination of 0.03 SC and a temperature of -150 C. In particular, when measured at those LILT conditions, the newly developed 'Hl-ETA/NR-LILT' silicon solar cells have reached a conversion efficiency of 26.3%, that is the highest value ever measured on a single junction solar cell. A large quantity of both 'Hl-ETA/NR-LILT' silicon and 'GaAs/Ge-LILT' solar cells are presently under fabrication and they will be submitted to a qualification test plan, including radiation exposure, in order to verify their applicability with respect to the mission requirements. The availability of two valid options will minimize the risk for the very ambitious scientific project. The paper describes how the technical achievements have been possible with Si and GaAs LILT solar cells (including a comparison between measured and modelled l-V characteristics) and it presents the technology verification tests results.

Strobl, G.↗
NASA NTRS1972

Methods of measurement for semiconductor materials, process control, and devices

Activities directed toward the development of methods of measurement for semiconductor materials, process control, and devices are described. Accomplishments include the determination of the reasons for differences in measurements of transistor delay time, identification of an energy level model for gold-doped silicon, and the finding of evidence that it does not appear to be necessary for an ultrasonic bonding tool to grip the wire and move it across the substrate metallization to make the bond. Work is continuing on measurement of resistivity of semiconductor crystals; study of gold-doped silicon; development of the infrared response technique; evaluation of wire bonds and die attachment; measurement of thermal properties of semiconductor devices, delay time, and related carrier transport properties in junction devices, and noise properties of microwave diodes; and characterization of silicon nuclear radiation detectors.

Bullis, W. M.↗
NASA NTRS1988

Deposition and characterization of ZnS/Si heterojunctions produced by vacuum evaporation

Isotype heterojunctions of ZnS (lattice constant 5.41 A) were grown on silicon (lattice constant 5.43 A) p-n junctions to form a minority-carrier mirror. The deposition process was vacuum evaporation from a ZnS powder source onto a heated (450 C) substrate. Both planar (100) and textured (111) surfaces were used. A reduction of the minority-carrier recombination at the surface was seen from increased short-wavelength quantum response and increased illuminated open-circuit voltage. The minority-carrier diffusion length was not degraded by the process.

Landis, Geoffrey A.↗
NASA NTRS1977

Silicon materials task of the low cost solar array project, phase 2

The object of phase 2 of this program is to investigate and define the effects of various processes, contaminants and process-contaminant interactions in the performance of terrestrial solar cells. The major effort this quarter was in the areas of crystal growth and thermal processing, comparison of impurity effects in low and high resistivity silicon, modeling the behavior of p-type ingots containing Mo, and C and, quantitative analysis of bulk lifetime and junction degradation effects in contaminated solar cells. The performance of solar cells fabricated on silicon web crystals grown from melts containing about 10 to the 18th power/cu cm of Cr, Mn, Fe, Ni, Ti, and V, respectively were measured. Deep level spectroscopy of metal-contaminated ingots was employed to determine the level and density of recombination centers due to Ti, V, Ni, and Cr.

Hopkins, R. H.↗
NASA NTRS1978

Process for utilizing low-cost graphite substrates for polycrystalline solar cells

Low cost polycrystalline silicon solar cells supported on substrates were prepared by depositing successive layers of polycrystalline silicon containing appropriate dopants over supporting substrates of a member selected from the group consisting of metallurgical grade polycrystalline silicon, graphite and steel coated with a diffusion barrier of silica, borosilicate, phosphosilicate, or mixtures thereof such that p-n junction devices were formed which effectively convert solar energy to electrical energy. To improve the conversion efficiency of the polycrystalline silicon solar cells, the crystallite size in the silicon was substantially increased by melting and solidifying a base layer of polycrystalline silicon before depositing the layers which form the p-n junction.

Chu, T. L.↗
NASA NTRS1983

Silicon sheet with molecular beam epitaxy for high efficiency solar cells

The capabilities of the new technique of Molecular Beam Epitaxy (MBE) are applied to the growth of high efficiency silicon solar cells. Because MBE can provide well controlled doping profiles of any desired arbitrary design, including doping profiles of such complexity as built-in surface fields or tandem junction cells, it would appear to be the ideal method for development of high efficiency solar cells. It was proposed that UCLA grow and characterize silicon films and p-n junctions of MBE to determine whether the high crystal quality needed for solar cells could be achieved.

Allen, F. G.↗
NASA NTRS1979

Alternate methods of applying diffusants to silicon solar cells

Low-melting phosphate and borate glasses were screen printed on silicon wafers and heated to form n and p junctions. Data on surface appearance, sheet resistance and junction depth are presented. Similar data are reported for vapor phase transport from sintered aluminum metaphosphate and boron-containing glass-ceramic solid sources. Simultaneous diffusion of an N(+) layer with screen-printed glass and a p(+) layer with screen-printed Al alloy paste was attempted. No p(+) back surface field formation was achieved. Some good cells were produced but the heating in an endless-belt furnace caused a large scatter in sheet resistance and junction depth for three separate lots of wafers.

Brock, T. W.↗
NASA NTRS1993

A high specific power solar array for low to mid-power spacecraft

UltraFlex is the generic term for a solar array system which delivers on-orbit power in the 400 to 6,000 watt per wing sizes with end-of-life specific power performance ranging to 150 watts-per-kilogram. Such performance is accomplished with off-the-shelf solar cells and state-of the-art materials and processes. Much of the recent work in photovoltaics is centered on advanced solar cell development. Successful as such work has been, no integrated solar array system has emerged which meets NASA's stated goals of 'increasing the end-of-life performance of space solar cells and arrays while minimizing their mass and cost.' This issue is addressed; namely, is there an array design that satisfies the usual requirements for space-rated hardware and that is inherently reliable, inexpensive, easily manufactured and simple, which can be used with both advanced cells currently in development and with inexpensive silicon cells? The answer is yes. The UltraFlex array described incorporates use of a blanket substrate which is thermally compatible with silicon and other materials typical of advanced multi-junction devices. The blanket materials are intrinsically insensitive to atomic oxygen degradation, are space rated, and are compatible with standard cell bonding processes. The deployment mechanism is simple and reliable and the structure is inherently stiff (high natural frequency). Mechanical vibration modes are also readily damped. The basic design is presented as well as supporting analysis and development tests.

Jones, P. Alan↗
NASA NTRS2002

The Stretched Lens Array (SLA): An Ultra-Light Photovoltaic Concentrator

A high-performance, ultralight, photovoltaic concentrator array is being developed for space power. The stretched lens array (SLA) uses stretched-membrane, silicone Fresnel lenses to concentrate sunlight onto triple-junction photovoltaic cells. The cells are mounted to a composite radiator structure. The entire solar array wing, including lenses, photovoltaic cell flex circuits, composite panels, hinges, yoke, wiring harness, and deployment mechanisms, has a mass density of 1.6 kg/sq.m. NASA Glenn has measured 27.4% net SLA panel efficiency, or 375 W/sq.m. power density, at room temperature. At GEO operating cell temperature (80 C), this power density will be 300 W/sq.m., resulting in more than 180 W/kg specific power at the full wing level. SLA is a direct ultralight descendent of the successful SCARLET array on NASA's Deep Space 1 spacecraft. This paper describes the evolution from SCARLET to SLA, summarizes the SLA's key features, and provides performance and mass data for this new concentrator array.

ONeill, Mark J.↗
NASA NTRS2003

Silicon Carbide Diodes Performance Characterization and Comparison With Silicon Devices

Commercially available silicon carbide (SiC) Schottky diodes from different manufacturers were electrically tested and characterized at room temperature. Performed electrical tests include steady state forward and reverse I-V curves, as well as switching transient tests performed with the diodes operating in a hard switch dc-to-dc buck converter. The same tests were performed in current state of the art silicon (Si) and gallium arsenide (GaAs) Schottky and pn junction devices for evaluation and comparison purposes. The SiC devices tested have a voltage rating of 200, 300, and 600 V. The comparison parameters are forward voltage drop at rated current, reverse current at rated voltage and peak reverse recovery currents in the dc to dc converter. Test results show that steady state characteristics of the tested SiC devices are not superior to the best available Si Schottky and ultra fast pn junction devices. Transient tests reveal that the tested SiC Schottky devices exhibit superior transient behavior. This is more evident at the 300 and 600 V rating where SiC Schottky devices showed drastically lower reverse recovery currents than Si ultra fast pn diodes of similar rating.

Lebron-Velilla, Ramon C.↗
NASA NTRS1979

Limiting process in shallow junction solar cells

In extending the violet and nonreflective cell technology to lower resistivities, several processes limiting output power were encountered. The most important was the dark diffusion current due to recombination at the front grid contacts. After removal of this problem by reduction of the silicon metal contact area (to 0.14 percent of the total area), the electric field enhanced junction recombination current J sub r was the main limitation. Alteration of the diffusion profile to reduce the junction field is shown to be an effective means of influencing J sub r. The remaining problems are the bulk recombination in the n+ layer and the surface recombination at the oxide-silicon interface; both of these problems are aggravated by band-narrowing resulting from heavy doping in the diffused layer. Experimental evidence for the main limitations is shown, where increased diffusion temperature is seen to reduce both the influence of the front grid contacts and the junction electric field by increasing the junction depth. The potential for further significant improvement in efficiency appears to be high.

Meulenberg, A.↗