SEARCH · Search NASA

Results for “Sputtering”

Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

SourceResearch connectionFrom yearThrough year

Quote a phrase for an exact phrase match. Source license links do not imply unrestricted reuse.

At least 181 records · Page 10

All sources NASA NTRS DOE OSTI

DOE OSTI2025

Sputtered ferroelectric aluminum scandium boron nitride (Al 1−x−y B x Sc y N)/ n -GaN heterostructures

This work demonstrates ferroelectric switching in magnetron sputtered Al 1−x−y B x Sc y N/ n -GaN heterostructures. Using high power impulse magnetron sputtering, a silicon doped n -GaN bottom electrode with an electron concentration of 6.0 × 10 19 cm −3 is grown on c-plane sapphire. Al 1−x−y B x Sc y N films are prepared on the GaN surface with Al:B:Sc ratios that produce tensile, lattice matched, or compressive epitaxial strains. X-ray diffraction shows that lattice matched and compressively strained Al 1−x−y B x Sc y N compositions are pseudomorphic, while partial relaxation is observed for tensilely strained Al 1−x−y B x Sc y N/ n -GaN heterostructures. Electrically, the Al 1−x−y B x Sc y N/ n -GaN stacks show robust hysteresis; the P–E loops are fully saturated with both lattice matched and compressively strained Al 1−x−y B x Sc y N compositions exhibiting remanent polarization values of 135 μC/cm 2 . For comparison, Al 1−x−y B x Sc y N films are also prepared on metal organic chemical vapor deposition and single crystal GaN substrates to extend strain and morphology trends to more common substrate types. This report validates that sputter deposition is a feasible technique for fabricating strain-tunable ferroelectric III–N heterostructures with high crystalline fidelity and smooth surface morphologies.

42 ENGINEERING↗

DOE OSTI2022

Combinatorial sputter deposition of ultrathick Au-Bi alloy films

We report gold-bismuth alloys are of interest as catalysts and catalytic sensing systems, electrochemical sensors, superconductors, and hohlraums for magnetically assisted inertial confinement fusion implosions. Radiation-hydrodynamics simulations with the Lasnex code of laser-driven hohlraums predict higher x-ray drive from Au-Bi alloys compared with cases of Au-Ta or pure Au and Bi hohlraums. Here, we use direct current magnetron sputtering in Ar gas, with co-sputtering from two elemental targets, to deposit Au-Bi alloys with Bi content of 9–77 at.% and thicknesses up to ~20 µm. Films are characterized by a combination of x-ray diffraction, Rutherford backscattering, scanning electron microscopy, substrate-curvature-based residual stress, and electronic transport measurements. Experiments are complemented by Monte Carlo simulations of ballistic sputtering and gas phase transport of depositing species and Ar gas atoms. Results show that all films are polycrystalline, with three distinct compositional regimes dominated by Au, Au 2 Bi, and Bi crystallographic phases. A metallic behavior of the temperature dependence of electrical resistivity is observed for all the films. Films with Bi content above ~30 at.% exhibit porosity, which is tolerable to hohlraum x-ray drive based on Lasnex simulations.

36 MATERIALS SCIENCE↗

DOE OSTI2019

Optimized oxygen deprived low temperature sputtered WO3 thin films for crystalline structures

In this work, we report a detailed analysis on the effects of processing parameters for sputtered tungsten trioxide (WO 3 ) thin nanoscale films on their structural, vibrational and electrical properties. The research aims to understand the fundamental aspects of WO3 sputtering at relatively low temperatures and in an oxygen deprived environment targeting applications of temperature and oxygen sensitive substrates. Structural analysis indicates that films deposited at room temperature, or substrate temperatures at or below 400 degrees C with low oxygen partial pressure are amorphous. Furthermore, crystallization of the films was observed with distinct Raman peaks when the films were annealed at 300 degrees C or above using rapid thermal annealing for 10 min. Films revealed monoclinic phases of WO 3 with the presence of W-O-W stretching, bending and lattice vibrational modes in the Raman spectra. Interestingly, a change of transport behavior from insulating to semiconducting was observed for as deposited films on post annealing. Annealed films revealed stoichiometric WO 3 phases with no external defects detected. The present study adopts a route to intercalate WO 3 in a variety of applications from electrochromic coloration to a nanocrystalline thin film for electronic devices sensitive to higher temperatures and gas flow in the sputtering system.

77 NANOSCIENCE AND NANOTECHNOLOGY↗

DOE OSTI2020

Large anisotropic magnetocaloric effect in all-sputtered epitaxial terbium thin films

We present an experimental investigation of the magnetic and magnetocaloric properties of sputtered epitaxial and amorphous Tb thin films. We grew epitaxial Nb (50-nm)/Tb (100-nm) bilayer thin films on Al 2 O 3 $(11\bar{2}0)$ substrate using DC magnetron sputtering at high temperature, with excellent crystalline quality of the hcp Tb(0001) layer. While the amorphous Tb thin film exhibits more isotropic magnetocaloric properties, we show that the epitaxial Tb thin film displays large anisotropic magnetocaloric properties, with a large maximum magnetic entropy change of 6.27 J kg -1 K -1 at the Néel temperature as well as a large relative cooling power of 225 J kg -1 with a magnetic field change ΔH = 20 kOe applied along the in-plane direction. These large and anisotropic magnetocaloric properties are much larger than those measured for the amorphous Tb thin film, or previously reported for Tb-based thin-film structures. Our findings highlight the opportunities for growing epitaxial rare-earth thin films using sputtering techniques and demonstrate the importance of crystallographic control on the magnetocaloric effect in Tb thin films.

36 MATERIALS SCIENCE↗

DOE OSTI2021

Microstructural and Superconducting Radiofrequency Properties of Multilayer Sequentially Sputtered Nb 3 Sn films

Nb 3 Sn is considered as a potential candidate for superconducting radiofrequency cavities for particle acceleration due to its higher transition temperature of 18.3 K and higher superheating field of 400 mT. Nb 3 Sn films can be grown inside the surface of a Nb cavity by sequentially sputtering multiple layers of Nb and Sn thin films followed by annealing at 950 °C for 3 h. We report on the properties of Nb 3 Sn films grown on Nb substrates by magnetron sputtering. The films’ crystal structure, surface morphology, and composition were characterized by X-ray diffraction, scanning electron microscopy, and energy-dispersive X-ray spectroscopy. The films had a polycrystalline Nb 3 Sn structure with a fine-grain surface and an atomic Sn composition of ~23%. The RF surface resistance of the films was measured for different temperatures at 7.4 GHz to understand the feasibility of this method for the SRF application. The RF surface resistance of the films was 5 mΩ at 12 K, which is about 2 orders of magnitude higher than 60 μΩ previously measured in Nb 3 Sn films grown by Sn vapor diffusion. Finally, the sputtered film had a superconducting transition at 17.2 K, which is also lower than 17.9 K observed in Nb 3 Sn film prepared by vapor diffusion.

43 PARTICLE ACCELERATORS↗

DOE OSTI2018

Calculation of Self-Sputtering Yield under Ion Bombardment of Solids: Computer Simulation and Theory

We developed a computer simulation program for investigation of solid self-sputtering under ion bombardment. The program is based on binary collision approximation, truncated Coulomb potential, and the model of local inelastic losses proportional to energy. As a result of simulation, the self-sputtering yield is calculated as a function of atomic number and ion energy. To verify the cascade simulation code, we created a self-sputtering theory for the case of hard sphere potential. Simulation results show good agreement with both experimental data and theory.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

DOE OSTI2020

Oxygen Reduction Reaction Activity of Nanocolumnar Platinum Thin Films by High Pressure Sputtering

Nanocolumnar platinum thin films (Pt-TFs) were produced by high pressure sputtering (HIPS) and investigated as oxygen reduction reaction electrocatalysts for polymer electrolyte membrane fuel cells. Conventional high-density Pt-TF prepared by low pressure sputtering was also studied for comparison. Pt-TFs were deposited on a microporous layer (MPL)-like surface composed of carbon particles to mimic catalyst-coated gas diffusion electrodes. Electron microscopy imaging revealed that HIPS Pt-TFs developed a cauliflower-like columnar microstructure, which originated from a shadowing effect during HIPS. This shadowing effect is enhanced on the rough surface of the MPL-like carbon that leads to the nano-cauliflower formation. With this approach, we also aimed to relate the catalyst performance obtained by benchtop tests directly to membrane electrode assembly test results. The electrochemically active surface area of Pt-TFs increased from 10 to 19 m 2 /g with increasing sputter pressure. Specific activity of conventional high-density and nanocolumnar films were similar at ~600 μA/cm 2 , which is likely due to their similar crystal grain sizes, >5 nm. On the other hand, mass-specific (MA) activity values increased from ~0.06 A/mgPt for conventional Pt-TF to ~0.13 A/mgPt for HIPS Pt-TFs, which is consistent with the columnar microstructure of HIPS films providing a better catalyst utilization compared to conventional Pt-TF.

08 HYDROGEN↗

DOE OSTI2024

Tuning the Superconducting Transition Temperature of Co-sputtered Iridium and Platinum Films

A superconducting film with a tunable low transition temperature (Tc) is required in high-resolution Transition-Edge Sensor (TES) detectors, which have applications including dark matter detection, low threshold coherent elastic neutrino nucleus scattering measurement, and X-ray spectroscopy. We have been investigating a new approach to tune the Tc of superconducting thin films fabricated by co-sputtering Iridium and Platinum. The effects of Pt concentration and deposition parameters on the films' structural, electrical, and superconducting properties have been studied. AFM and XRD techniques and low temperature resistance measurements have been utilized for film characterization. By varying the Pt concentration and deposition parameters when co-sputtering, we have successfully achieved controllable tuning of Tc in the range of 30-200 mK. The experimental results demonstrate co-sputtering as a viable method for controlling the Tc of Ir-based thin films that can be applied to fabricating high-resolution TESs.

Yefremenko, V. G.↗

DOE OSTI2020

Effects of ion sputtering on plutonium surfaces

Scanning tunneling microscopy has been performed on an electro-polished gallium-stabilized delta-phase plutonium sample under ultra-high vacuum conditions. The images obtained were used to measure surface roughness as ion sputtering and annealing was applied to the plutonium sample. It was demonstrated that sputter/anneal cycles progressively increased the surface roughness of the plutonium. Furthermore, Auger and scanning tunneling spectroscopy measurements revealed an initially unstable and dynamically changing surface that became increasingly stable as sputter/anneal cycles were applied. The stabilized surface region contained within the sputter crater was observed to be unchanged for up to 17 months after the final sputter anneal cycle.

36 MATERIALS SCIENCE↗

DOE OSTI2019

Enhanced properties of tungsten films by high-power impulse magnetron sputtering

Tungsten films (750–1200 nm thick) deposited by high-power impulse magnetron sputtering (HiPIMS) under various sputtering gas pressure and substrate bias are investigated for their physical and microstructural characteristics. Compared to films deposited by the traditional direct current (DC) method with the same deposition configuration and similar parameters, HiPIMS materials exhibit higher hardness, a smoother surface, and better adhesion to a substrate. These excellent properties are attributed to the highly uniform grain structures developed during HiPIMS deposition, in contrast to the funnel shaped grains seen in DC sputtered films. Finally, combined with the in-situ stress measurements, we discuss the underlying mechanisms that lead to enhanced properties of HiPIMS tungsten films.

36 MATERIALS SCIENCE↗

DOE OSTI2019

Highly Plasmonic Titanium Nitride by Room-Temperature Sputtering

Titanium nitride (TiN) has recently emerged as an attractive alternative material for plasmonics. However, the typical high-temperature deposition of plasmonic TiN using either sputtering or atomic layer deposition has greatly limited its potential applications and prevented its integration into existing CMOS device architectures. Here, we demonstrate highly plasmonic TiN thin films and nanostructures by a room-temperature, low-power, and bias-free reactive sputtering process. We investigate the optical properties of the TiN films and their dependence on the sputtering conditions and substrate materials. We find that our TiN possesses one of the largest negative values of the real part of the dielectric function as compared to all other plasmonic TiN films reported to date. Two-dimensional periodic arrays of TiN nanodisks are then fabricated, from which we validate that strong plasmonic resonances are supported. Our room-temperature deposition process can allow for fabricating complex plasmonic TiN nanostructures and be integrated into the fabrication of existing CMOS-based photonic devices to enhance their performance and functionalities.

36 MATERIALS SCIENCE↗

DOE OSTI2023

Ion-beam assisted sputtering of titanium nitride thin films

Abstract Titanium nitride is a material of interest for many superconducting devices such as nanowire microwave resonators and photon detectors. Thus, controlling the growth of TiN thin films with desirable properties is of high importance. This work aims to explore effects in ion beam-assisted sputtering (IBAS), were an observed increase in nominal critical temperature and upper critical fields are in tandem with previous work on Niobium nitride (NbN). We grow thin films of titanium nitride by both, the conventional method of DC reactive magnetron sputtering and the IBAS method, to compare their superconducting critical temperatures $$T_{c}$$ T c as functions of thickness, sheet resistance, and nitrogen flow rate. We perform electrical and structural characterizations by electric transport and x-ray diffraction measurements. Compared to the conventional method of reactive sputtering, the IBAS technique has demonstrated a 10% increase in nominal critical temperature without noticeable variation in the lattice structure. Additionally, we explore the behavior of superconducting $$T_c$$ T c in ultra-thin films. Trends in films grown at high nitrogen concentrations follow predictions of mean-field theory in disordered films and show suppression of superconducting $$T_c$$ T c due to geometric effects, while nitride films grown at low nitrogen concentrations strongly deviate from the theoretical models.

36 MATERIALS SCIENCE↗

DOE OSTI2024

One-step sputtering of MoSSe metastable phase as thin film and predicted thermodynamic stability by computational methods

Abstract We present the fabrication of a MoS 2−x Se x thin film from a co-sputtering process using MoS 2 and MoSe 2 commercial targets with 99.9% purity. The sputtering of the MoS 2 and MoSe 2 was carried out using a straight and low-cost magnetron radio frequency sputtering recipe to achieve a MoS 2−x Se x phase with x = 1 and sharp interface formation as confirmed by Raman spectroscopy, time-of-flight secondary ion mass spectroscopy, and cross-sectional scanning electron microscopy. The sulfur and selenium atoms prefer to distribute randomly at the octahedral geometry of molybdenum inside the MoS 2−x Se x thin film, indicated by a blue shift in the A 1g and E 1 g vibrational modes at 355 cm −1 and 255 cm −1 , respectively. This work is complemented by computing the thermodynamic stability of a MoS 2−x Se x phase whereby density functional theory up to a maximum selenium concentration of 33.33 at.% in both a Janus-like and random distribution. Although the Janus-like and the random structures are in the same metastable state, the Janus-like structure is hindered by an energy barrier below selenium concentrations of 8 at.%. This research highlights the potential of transition metal dichalcogenides in mixed phases and the need for further exploration employing low-energy, large-scale methods to improve the materials’ fabrication and target latent applications of such structures.

36 MATERIALS SCIENCE↗

DOE OSTI2022

Phase evolution and morphology in Cu-In-Ga sputtered precursors

The reaction of metallic precursors has become the primary method of industrial manufacturing for Cu(In,Ga)Se2. Commonly used Cu3Ga sputter targets have thus far dictated that the relative Ga composition of these precursors is Ga/(In+Ga) ≈ 0.25. Cu-In-Ga precursors are prepared with varying DC sputtering conditions and Ga compositions ranging from 0 ≤ Ga/(In+Ga) ≤ 0.75. The phase evolution and morphology of these precursors is characterized using x-ray diffraction (XRD) and scanning electron microscopy, including in situ annealing of precursors during XRD measurements. It is observed that the Ga composition of as-deposited precursors affects phase evolution with annealing. Consistent morphology changes were not observed with changing Ga, however, film morphology was controlled by adjusting In sputter conditions.

Lam, Isaac K. (ORCID:0000000198002765)↗

DOE OSTI2023

Radio-frequency magnetron sputter deposition of ultrathick boron carbide films

The deposition of thick B 4 C films with low residual stress by conventional direct-current magnetron sputtering is accompanied by the formation of dust particulates contaminating the target, chamber, and substrates and leading to the formation of nodular defects in films. Here, we demonstrate that the formation of particulates is greatly reduced during radio-frequency magnetron sputtering (RFMS). We systematically study properties of B 4 C films deposited by RFMS with a substrate temperature of 330 °C, a target-to-substrate distance of 10 cm, Ar working gas pressure in the range of 4.5–12.0 mTorr (0.6–1.6 Pa), and substrate tilt angles of 0°–80°. All films are x-ray amorphous. A columnar structure develops with increasing either Ar pressure or substrate tilt. For columnar films, the column tilt angle decreases with increasing Ar pressure, which we attribute to a corresponding increase in the width of the distribution of impact angles of deposition flux. In contrast to the Keller–Simmons rule, the deposition rate increases with increasing Ar pressure, which suggests a better coupling of the RF energy to the plasma processes that lead to target sputtering at higher pressures. There is a critical substrate tilt angle above which the total residual stress is close to zero. This critical substrate tilt angle is ~0° for an Ar pressure of 12 mTorr (1.6 Pa). The lower residual stress state, necessary for depositing ultrathick films, is characterized by a larger concentration of nanoscale inhomogeneities and decreased mechanical properties. Based on these results, RFMS deposition of 60-μm-thick B 4 C films is demonstrated.

36 MATERIALS SCIENCE↗

DOE OSTI2018

Nb3Sn Multilayer Sequential Sputtering at Jefferson Lab

Nb3Sn-coated Nb SRF cavities are studied due to their potential of providing a higher accelerating gradient over Nb SRF cavities. Magnetron sputtering can be a feasible alternative to conventional tin vapor diffusion process to fabricate Nb3Sn for SRF cavities. By depositing Nb and Sn layers separately and annealing afterwards, the stoichiometry of the coated films can be controlled to create Nb3Sn. To understand the formation of Nb3Sn at higher annealing temperatures, a comparative study of deposition and processing conditions is required. We have sputtered Nb and Sn multilayers and post-deposition annealed at 850, 950, 1000, 1100 and 1200 °C for 3 hours. The structural properties of the annealed films were characterized by X-ray diffraction (XRD) and compared to as-coated films. The film microstructures and compositions were examined by scanning electron microscopy (SEM) and energy dispersive X-ray spectroscopy (EDS). The superconducting transition of the films were measured by surface resistivity data obtained down to cryogenic temperatures. A new cavity deposition system with a cylindrical magnetron has been designed to implement the sequential sputtering technique onto a single-cell cavity.

Eremeev, Grigory↗

NASA NTRS1973

Method and apparatus for sputtering utilizing an apertured electrode and a pulsed substrate bias

The method and equipment used for sputtering by use of an apertured electrode and a pulsed substrate bias are discussed. The technique combines the advantages of ion plating with the versatility of a radio frequency sputtered source. Electroplating is accomplished by passing a pulsed high voltage direct current to the article being plated during radio frequency sputtering.

Przybyszewski, J. S.↗

NASA NTRS1974

Fabrication of thick structures by sputtering

Deposit, 5500-gram of Cu-0.15 wt % Zr alloy, sputtered onto copper cylinder to average thickness of 12.29 mm. Structure was achieved with high-rate sputter deposition for about 100 hours total sputtering time. Material had twice the strength of unsputtered material at temperatures to 723 K and equivalent strength at nearly 873 K.

Kazaroff, J. M.↗