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Results for “below- threshold ionization”

Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 181 records · Page 10
All sourcesNASA NTRSDOE OSTI
NASA NTRS1992

Cross-sections for electron impact ionization of O2

Using a crossed electron beam-molecular beam collision geometry and the relative flow technique measurements have been made to generate a uniform set of electron impact ionization cross-section data for O2 for electron impact energies from threshold to 1000 eV. Present values of total, partial and dissociative ionization cross-sections are compared with previously published data. Cross-sections for the formation of O2(+) from O2 have been measured for the first time.

Krishnakumar, E.↗
NASA NTRS1976

Bit-error rates in optical communications

Statistical model, which consists of on/off binary system, assumes Poisson detection process and log-normal atmospheric scintillation. Based upon detection process and atmospheric ionization, piecewise linear model for adaptive threshold system is developed.

Webb, W. E.↗
DOE OSTI2024

The Effects of Threshold Voltage and Number of Fins per Transistor on the TID Response of GF 12LP Technology

This abstract presents a comprehensive analysis of total ionizing dose (TID) response in GlobalFoundries’ 12LP 12nm bulk FinFET technology using 10keV X-rays. Devices with higher threshold voltages (VTs) demonstrated lower increases in off-state leakage current (IDS,OFF) post-irradiation, highlighting the mitigating role of high VT in TID response. Our data shows that transistors with fewer fins exhibit superior TID resistance, implying lower susceptibility to radiation effects. Our study also probed two bias conditions, "Gate-On" and "Pass-Gate," with the former displaying more severe TID degradation. Interestingly, p-type devices displayed negligible degradation, underscoring their inherent resilience to TID effects. Additionally, medium thick n-type devices echoed the fin-count-dependent TID response observed in other transistor types, further strengthening our findings. These results underscore the importance of strategic transistor selection and design for enhancing the TID resilience of future CMOS FinFET architectures, particularly critical in radiation-intense environments.

42 ENGINEERING↗
NASA NTRS1994

Numerical study of the wave-vector dependence of the electron interband impact ionization rate in bulk GaAs

Ensemble Monte Carlo calculations of the electron interband impact ionization rate in bulk GaAs are presented using a wave-vector (k)-dependent formulation of the ionization transition rate. The transition rate is evaluated through the use of numerically generated wavefunctions determined via a k-p calculation within the first two conduction bands at numerous points within a finely spaced three-dimensional grid in k space. The transition rate is determined to be greatest for states within the second conduction band. Is is found that the interband impact ionization transition rate in bulk GaAs is best characterized as having an exceedingly soft threshold energy. As a consequence, the dead space, defined as the distance over which the ionization probability for a given carrier is assumed to be zero, is estimated to be much larger than that estimated using a harder threshold. These results have importance in the design of the multiquantum-well avalanche photodiodes.

Wang, Yang↗
NASA NTRS1994

Numerical Study of the Wave-Vector Dependence of the Electron Interband Impact Ionization Rate in Bulk GaAs

Ensemble Monte Carlo calculations of the electron interband impact ionization rate in bulk GaAs are presented using a wave-vector (k)-dependent formulation of the ionization transition rate. The transition rate is evaluated through use of numerically generated wavefunctions determined via a k-p calculation within the first two conduction bonds at numerous points within a finely spaced three-dimensional grid in k space. The transition rate is determined to be greatest for states within the second conduction band. It is found that the interband impact ionization transition rate in bulk GaAs is best characterized as having an exceedingly "soft" threshold energy. As a consequence, the dead space, defined as the distance over which the ionization probability for a given carrier is assumed to be zero, is estimated to be-much larger than that estimated using a "harder" threshold. These results have importance in the design of multiquantum-well avalanche photodiodes.

Wang, Yang↗
DOE OSTI2020

Results on low-mass weakly interacting massive particles from an 11 kg d target exposure of DAMIC at SNOLAB

We present constraints on the existence of weakly interacting massive particles (WIMPs) from a 11 kg-day target exposure of the DAMIC experiment at the SNOLAB underground laboratory. The observed energy spectrum and spatial distribution of ionization events with electron-equivalent energies $>$200 eV$_{\rm ee}$ in the DAMIC CCDs are consistent with backgrounds from natural radioactivity. An excess of ionization events is observed above the analysis threshold of 50 eV$_{\rm ee}$. While the origin of this low-energy excess requires further investigation, our data exclude spin-independent WIMP-nucleon scattering cross sections $\sigma_{\chi-n}$ as low as $3\times 10^{-41}$ cm$^2$ for WIMPs with masses $m_{\chi}$ from 7 to 10 GeV$c^{-2}$ . These results are the strongest constraints from a silicon target on the existence of WIMPs with $m_{\chi}$$<$9 GeV$c^{-2}$ and are directly relevant to any dark matter interpretation of the excess of nuclear-recoil events observed by the CDMS silicon experiment in 2013.

WIMP search, Dark Matter, DAMIC, SNOLAB↗
DOE OSTI2025

Evidence of Coherent Elastic Neutrino-Nucleus Scattering with COHERENT’s Germanium Array

We report the first detection of coherent elastic neutrino-nucleus scattering (CEvNS) on natural germanium, measured at the Spallation Neutron Source at Oak Ridge National Laboratory. The Ge-Mini detector of the COHERENT collaboration employs large-mass, low-noise, high-purity germanium spectrometers, enabling excellent energy resolution, and an analysis threshold of 1.5 keV electron-equivalent ionization energy. We observe an on-beam excess of 20.6$^{+7.1}_{−6.3}$ counts with a total exposure of 10.22 GWhkg, and we reject the no-CEvNS hypothesis with 3.9⁢𝜎 significance. The result agrees with the predicted standard model of particle physics signal rate within 2⁢𝜎.

Electroweak interaction↗
NASA NTRS1994

Advanced p-MOSFET Ionizing-Radiation Dosimeter

Circuit measures total dose of ionizing radiation in terms of shift in threshold gate voltage of doped-channel metal oxide/semiconductor field-effect transistor (p-MOSFET). Drain current set at temperature-independent point to increase accuracy in determination of radiation dose.

Buehler, Martin G.↗
DOE OSTI2020

Results on low-mass weakly interacting massive particles from a 11 kg-day target exposure of DAMIC at SNOLAB

We present constraints on the existence of weakly interacting massive particles (WIMPs) from a 11 kg-day target exposure of the DAMIC experiment at the SNOLAB underground laboratory. The observed energy spectrum and spatial distribution of ionization events with electron-equivalent energies $>$200 eV$_{\rm ee}$ in the DAMIC CCDs are consistent with backgrounds from natural radioactivity. An excess of ionization events is observed above the analysis threshold of 50 eV$_{\rm ee}$. While the origin of this low-energy excess requires further investigation, our data exclude spin-independent WIMP-nucleon scattering cross sections $\sigma_{\chi-n}$ as low as $3\times 10^{-41}$ cm$^2$ for WIMPs with masses $m_{\chi}$ from 7 to 10 GeV$c^{-2}$ . These results are the strongest constraints from a silicon target on the existence of WIMPs with $m_{\chi}$$<$9 GeV$c^{-2}$ and are directly relevant to any dark matter interpretation of the excess of nuclear-recoil events observed by the CDMS silicon experiment in 2013.

72 PHYSICS OF ELEMENTARY PARTICLES AND FIELDS↗
DOE OSTI2025

Impact of 12-nm FinFET Technology Variations on TID Effects: A Comparative Study of GF 12LP and 12LP+ at the Transistor Level

Here, this article presents a comparative analysis of total ionizing dose (TID) response in GlobalFoundries’ (GF) 12 low-power (LP) and 12LP+12-nm bulk fin field effect transistor (FinFET) technologies using 10-keV X-rays. Our findings show that 12LP+ n-type transistors demonstrate higher sensitivity to TID degradation of the off-state leakage drain current compared to 12LP. Data indicate that for both 12LP and 12LP+, transistors with higher threshold voltages (VTs) exhibit lower off-state drain-source leakage postirradiation compared to transistors with lower VTs. Data consistently show that transistors with fewer fins per transistor show superior TID tolerance, in both 12LP and 12LP+ technologies. Lower VT transistors in both technologies display similar preirradiation leakage currents. On the other hand, higher VT transistors in 12LP+ show lower preirradiation leakage currents than those in 12LP, highlighting that the front-end-of-line of 12LP+ technology has been modified compared to 12LP. p-type devices in 12LP+ presented negligible degradation. Larger TID sensitivity in 12LP+ might be attributed to the implementation of dual-metal gate work functions, reduced halo doping, deeper source/drain (S/D) doping profiles, and/or 12LP+ having narrower fins compared to 12LP.

Dual-metal gate work functions↗
NASA NTRS1990

Impact ionization in the base of a hot-electron AlSb/InAs bipolar transistor

The operation of a new AlSb/InAs heterojunction bipolar transistor is studied. The electrons are injected into a p-InAs base across the AlSb/InAs heterojunction. The conduction-band discontinuity at this heterojunction is sufficiently large so that energy of the electrons injected into InAs exceeds the threshold for generating electron-hole pairs by impact ionization. The observed incremental common base current at zero collector-base bias decreases and becomes negative as the emitter current is increased, thus providing direct evidence for impact ionization entirely by band-edge discontinuities.

Vengurlekar, Arvind S.↗
NASA NTRS1978

Low energy ionizing collisions between N2 and CO beam molecules and CO, N2, NO, CH4, and CO2 target molecules

Absolute total negative charge production cross sections for N2 + CO, CO + N2, CO + CO, N2 + NO, N2 + CH4, and N2 + CO2 collisions are reported, and a simple model of collisions is discussed. The cross sections were measured to within about 1 eV of their thresholds. Specific reaction channels were investigated by referring to mass spectrometric identification of the product ions scattered in the forward direction, and these product ion identifications were used to explain characteristic structures in the total charge production cross sections in the near-threshold regions. The extent of the importance of dissociative ionization and 'simple' ionization in the studied collisions at low energy is considered, and charge transfer cross sections for (CO)+ + CO, CO(+) + CH4, and N2(+) + CH4 are presented.

Utterback, N. G.↗
DOE OSTI2022

Few-cycle optical field breakdown and damage of gallium oxide and gallium nitride

Both gallium oxide and gallium nitride have great potential for use as high power transparent conducting oxide materials for a wide range of optoelectronic applications. It is, therefore, important to determine the dynamic optical field breakdown for these materials. Here, we report laser damage thresholds for Ga 2 O 3 and GaN using 9 fs few-cycle pulses with a center wavelength near 760 nm. We determine laser-induced damage thresholds (LIDTs) for both single pulse and multi-pulse exposures, with multi-pulse LIDT showing significant reduction compared to single pulse LIDT (in some cases, >50%), possibly due to laser-induced defects. We show that Ga 2 O 3 and GaN have an ultrafast optical field breakdown of 23 and 18 GV/m when nearly polarized along their [010] and [111] planes, respectively, extending their suitability for high power applications to the ultrashort pulse regime. To accurately characterize the excited carrier density criteria in which apparent laser damage occurs, carrier excitation dynamics for the entire laser pulse interaction were simulated using a modified Keldysh ionization model. For the measured single-shot threshold fluences, the plasma critical density was surpassed by 2 orders of magnitude and 2D finite-difference time-domain simulations were employed to understand the pulse interaction near the surface.

Tripepi, Michael↗
DOE OSTI2020

A low energy rare event search with the MAJORANA DEMONSTRATOR

The MAJORANA DEMONSTRATOR is sensitive to rare events near its energy threshold, including bosonic dark matter, solar axions, and lightly ionizing particles. In this analysis, a novel training set of low energy small-angle Compton scatter events is used to determine the efficiency of pulse shape analysis cuts, and we present updated bosonic dark matter and solar axion results from an 11.17 kg-y dataset using a 5 keV analysis threshold.

79 ASTRONOMY AND ASTROPHYSICS↗
NASA NTRS1989

Flash-photoionized nebulae

Under conditions of high radiation intensity and low gas density, recombination may be neglected in determining the ionization state of a photoionized gas. Calculations of the ionization structure of nebulae in this 'flash-photoionized' regime are reported. Very hard spectra of ionizing ultraviolet radiation may be produced by filtration of the ionizing flux through a neutral hydrogen layer which preferentially absorbs photons just above the hydrogen photoionization threshold. Fluxes with these hard spectra produce gas layer in which helium is largely doubly ionized while hydrogen is largely neutral. Such a layer leads to anomalously high ratios of He II to H I recombination line strengths. These results are applied to the problem of the spectrum of the arc in the cluster of galaxies A370. It is found that the spectrum may possibly be reconciled with the light echo model.

Katz, J. I.↗
DOE OSTI2025

Bond Dissociation Energies and Electronic Calculations on the Actinide Halides ThX and UX (X = Cl, Br, I)

Resonant two-photon ionization spectroscopy has been used to locate predissociation thresholds in the spectra of the actinide halides ThX and UX, where X = Cl, Br, and I. These predissociation thresholds are identified as the bond dissociation energies (BDEs) of the molecules. The resulting values show very similar BDEs for the corresponding ThX and UX species, with the thorium molecules being slightly more strongly bound: D 0 (ThCl) = 5.077(6) eV, D 0 (ThBr) = 4.391(4) eV, D 0 (ThI) = 3.537(8) eV, D 0 (UCl) = 4.989(3) eV, D 0 (UBr) = 4.313(3) eV, and D 0 (UI) = 3.449(8) eV. Here, the estimated error limit is given in parentheses in units of the last reported digit. Spinor-based coupled cluster calculations have also been carried out on the halides of this work, including also ThF and UF. Here, the final D 0 values after including contributions due to basis set incompleteness, outer-core-correlation, picture-change, and QED effects are within 0.04 eV of the present experimental values in each case.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2021

Sensitivity of future liquid argon dark matter search experiments to core-collapse supernova neutrinos

Future liquid-argon DarkSide-20k and Argo detectors, designed for direct dark matter search, will be sensitive also to core-collapse supernova neutrinos, via coherent elastic neutrino-nucleus scattering. This interaction channel is flavor-insensitive with a high-cross section, enabling for a high-statistics neutrino detection with target masses of ~50 t and ~360 t for DarkSide-20k and Argo respectively. Thanks to the low-energy threshold of ~0.5 keVnr achievable by exploiting the ionization channel, DarkSide-20k and Argo have the potential to discover supernova bursts throughout our galaxy and up to the Small Magellanic Cloud, respectively, assuming a 11-M progenitor star. In this work, we report also on the sensitivity to the neutronization burst, whose electron neutrino flux is suppressed by oscillations when detected via charged current and elastic scattering. Finally, the accuracies in the reconstruction of the average and total neutrino energy in the different phases of the supernova burst, as well as its time profile, are also discussed, taking into account the expected background and the detector response.

79 ASTRONOMY AND ASTROPHYSICS↗
NASA NTRSDate not supplied

Shields-1 Energetic Proton Dose Comparison from Solar Minimum and Active Periods

Shields-1 has been operating in polar low earth orbit since December 2018 as part of the CubeSat Launch Initiative (CSLI) Educational Launch of Nanosatellites (ELaNa)XIX Mission. Shields-1 has 8 Teledyne µdosimeters behind shielding. These shielded µdosimeters have high minimum proton energy thresholds. The Shields-1 electronics enclosure µdosimeter has a minimum proton threshold energy of 151 MeV. The annualized total ionizing dose (TID) in the electronics enclosure was 75.6 +/- 3.2 RAD from July-August 2019, which was a solar minimum period. In contrast, the annualized TID was 61.0 +/- 2.5 RAD in July 2023, a solar active month. The TID change can be attributed to both the reduction in radiation at the South Atlantic Anomaly (SAA) and the decrease in galactic cosmic radiation during increasing solar activity. The measured GCR dose over the poles was reduced during the July 2023 solar active period in comparison with the July 2019 solar minimum period, using the most sensitive µdosimeter channel for the measurement. Shields-1 has demonstrated the capability of measuring the changes in high energy protons in polar low earth orbit during changes in solar activity, which contributes to the understanding of Earth in the heliosphere.

Shields-1 Dosimetry Space Sciences↗