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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 181 records · Page 10
All sourcesNASA NTRSDOE OSTI
NASA NTRS1982

Computer-aided prediction of high-frequency performance limits in silicon bipolar integrated circuits

A circuit model for an existing silicon integrated bipolar junction transistor (IBJT) is used to evaluate presently achievable high frequency circuit performance. The relationship between circuit model and processing parameters are semi-quantitatively explored to make predictions on the frequency response, which can be achieved through realistic device fabrication modifications. A new figure of merit is introduced, which is defined as the signal frequency at which an integrated bipolar junction transistor can deliver a power gain of G. The most sensitive parameter influencing attainable high frequency IBJT performance is base resistance.

Burns, J. L.↗
NASA NTRS2023

Total Ionizing Dose Test Report Microchip JANTXV2N6284 NPN Darlington Power Si Transistor

This study was undertaken to determine the effects of total ionizing dose (TID) on the JANTXV2N6284 NPN Darlington power bipolar junction transistor (BJT). The device was parametrically characterized prior to, at each incremental dose step, and after irradiation. Testing was at a low-dose rate using the NASA GSFC Radiation Effects Facility (REF).

Kaitlyn L Ryder↗
NASA NTRS1988

Refined Transistor Model For Simulation Of SEU

Equivalent base resistance added. Theoretical study develops equations for parameters of Gummel-Poon model of bipolar junction transistor: includes saturation current, amplification factors, charging times, knee currents, capacitances, and resistances. Portion of study concerned with base region goes beyond Gummel-Poon analysis to provide more complete understanding of transistor behavior. Extended theory useful in simulation of single-event upset (SEU) caused in logic circuits by cosmic rays or other ionizing radiation.

Zoutendyk, John A.↗
NASA NTRS1982

Component technology for space power systems

The Lewis/OAST program for the development of Component Technology for Space Power Systems is described. The program is divided into five generic areas: semiconductor devices (transistors, thyristors, and diodes); conductors (materials and transmission lines); dielectrics; magnetic devices; and thermal control devices. Examples of progress in each of the five areas is discussed. Bipolar power transistors up to 1000 V at 100 A with a gain of 10 and a 0.5 mu sec rise and fall time are presented. A new class of semiconductor devices with a possibility of switching 1000 000 V is described. Several 100 kW rotary power transformer designs and a 25 kW, 20 kHz transformer weighting 3.2 kg have been developed. Progress on the creation of diamond-like films for thermal devices and intercalated carbon fibers with the strength of steel and the conductivity of copper at one third the mass of copper is presented.

Finke, R.↗
NASA NTRS1983

Advanced electrical power system technology for the all electric aircraft

The application of advanced electric power system technology to an all electric airplane results in an estimated reduction of the total takeoff gross weight of over 23,000 pounds for a large airplane. This will result in a 5 to 10 percent reduction in direct operating costs (DOC). Critical to this savings is the basic electrical power system component technology. These advanced electrical power components will provide a solid foundation for the materials, devices, circuits, and subsystems needed to satisfy the unique requirements of advanced all electric aircraft power systems. The program for the development of advanced electrical power component technology is described. The program is divided into five generic areas: semiconductor devices (transistors, thyristors, and diodes); conductors (materials and transmission lines); dielectrics; magnetic devices; and load management devices. Examples of progress in each of the five areas are discussed. Bipolar power transistors up to 1000 V at 100 A with a gain of 10 and a 0.5 microsec rise and fall time are presented. A class of semiconductor devices with a possibility of switching up to 100 kV is described. Solid state power controllers for load management at 120 to 1000 V and power levels to 25 kW were developed along with a 25 kW, 20 kHz transformer weighing only 3.2 kg.

Finke, R. C.↗
NASA NTRS1983

Advanced electrical power system technology for the all electric aircraft

The application of advanced electric power system technology to an all electric airplane results in an estimated reduction of the total takeoff gross weight of over 23,000 pounds for a large airplane. This will result in a 5 to 10 percent reduction in direct operating costs (DOC). Critical to this savings is the basic electrical power system component technology. These advanced electrical power components will provide a solid foundation for the materials, devices, circuits, and subsystems needed to satisfy the unique requirements of advanced all electric aircraft power systems. The program for the development of advanced electrical power component technology is described. The program is divided into five generic areas: semiconductor devices (transistors, thyristors, and diodes); conductors (materials and transmission lines); dielectrics; magnetic devices; and load management devices. Examples of progress in each of the five areas are discussed. Bipolar power transistors up to 1000 V at 100 A with a gain of 10 and a 0.5 microsec rise and fall time are presented. A class of semiconductor devices with a possibility of switching up to 100 kV is described. Solid state power controllers for load management at 120 to 1000 V and power levels to 25 kW were developed along with a 25 kW, 20 kHz transformer weighing only 3.2 kg. Previously announced in STAR as N83-24764

Finke, R. C.↗
NASA NTRS2001

Electronic Model of a Ferroelectric Field Effect Transistor

A pair of electronic models has been developed of a Ferroelectric Field Effect transistor. These models can be used in standard electrical circuit simulation programs to simulate the main characteristics of the FFET. The models use the Schmitt trigger circuit as a basis for their design. One model uses bipolar junction transistors and one uses MOSFET's. Each model has the main characteristics of the FFET, which are the current hysterisis with different gate voltages and decay of the drain current when the gate voltage is off. The drain current from each model has similar values to an actual FFET that was measured experimentally. T'he input and o Output resistance in the models are also similar to that of the FFET. The models are valid for all frequencies below RF levels. No attempt was made to model the high frequency characteristics of the FFET. Each model can be used to design circuits using FFET's with standard electrical simulation packages. These circuits can be used in designing non-volatile memory circuits and logic circuits and is compatible with all SPICE based circuit analysis programs. The models consist of only standard electrical components, such as BJT's, MOSFET's, diodes, resistors, and capacitors. Each model is compared to the experimental data measured from an actual FFET.

MacLeod, Todd C.↗
DOE OSTI2020

Three-Terminal Bipolar Junction Bottom Cell as Simple as PERC: Towards Lean Tandem Cell Processing

Silicon-based tandem cells are a potential upgrade for the dominating PERC technology and can greatly increase the conversion efficiency. A novel approach, the three-terminal (3T) tandem using interdigitated back-contact (IBC) cells, was shown to combine the advantages of four- and two-terminal tandem cells at the expense of a more complex bottom cell fabrication process. In this paper, we propose a simplified and lean PERC-like 3T bipolar junction bottom cell featuring two minority-carrier selective contacts and a single majority-carrier selective contact, and thus resembling a bipolar junction transistor architecture. We present the lean PERC-like fabrication process and explain the working principle by using current-voltage measurements of illuminated 3T IBC cells.

14 SOLAR ENERGY↗
NASA NTRS1982

Kilovolt dc solid state remote power controller development

The experience gained in developing and applying solid state power controller (SSPC) technology at high voltage dc (HVDC) potentials and power levels of up to 25 kilowatts is summarized. The HVDC switching devices, power switching concepts, drive circuits, and very fast acting overcurrent protection circuits were analyzed. A 25A bipolar breadboard with Darlington connected switching transistor was built. Fault testing at 900 volts was included. A bipolar transistor packaged breadboard design was developed. Power MOSFET remote power controller (RPC) was designed.

Mitchell, J. T.↗
DOE OSTI2020

Evaluation of the DC bus link capacitors and power transistor modules in the qualification testing of PV inverters

To achieve useful, fair, and cost-effective design qualification and type approval testing for PV inverters, two procedures were developed and demonstrated to evaluate the bus link capacitors and power transistor—and where applicable, its module—for long-term reliability. We evaluate the inverter under simulated use conditions with heat run tests to find the highest operating temperatures reached by these components. The procedures are demonstrated in this study with a 4-kVA class string inverter. The maximum temperature of the DC bus link capacitors was determined to be 76.4°C when the ambient temperature was at the inverter's maximum rated temperature of 60°C with derating occurring. On the other hand, the power transistor module's maximum temperature using the heat sink temperature as the index, 92.6°C, occurred in an ambient of 40.8°C when derating was not occurring. The conditions found for upper temperatures exhibited by these components are, respectively, proposed for implementation in the dry heat and thermal cycling tests in the IEC 62093 “Power conversion equipment for photovoltaic systems – Design qualification testing” international standard draft so that the levels applied in the tests are in proportion to those experienced in the field. Finally as a result, fairer evaluation of inverter reliability is realized.

14 SOLAR ENERGY↗
DOE OSTI2020

Local Environment Affects the Activity of Enzymes on a 3D Molecular Scaffold

The ability to coordinate and confine enzymes presents an opportunity to affect their performance and to create chemically active materials. Recent studies show that polymers and biopolymers can be used to scaffold enzymes, and that can lead to the modulated biocatalytic efficiency. In this work, we investigated the role of microenvironments on enzyme activity using a well-defined molecular scaffold. An enzyme, glucose oxidase (GO x ), was positioned at different locations of a three-dimensional (3D) octahedral DNA scaffold (OS), allowing the enzyme’s polyanionic environments to be altered. Using electrical sensing, based on a bipolar junction transistor, we measured directly and in real-time the enzyme’s proton generation at these different microenvironments. We found a 200% enhancement of immobilized enzyme over free GOx and about a 30% increase in catalytic rates when the enzyme was moved on the same molecular scaffold to a microenvironment with a higher local concentration of polyanions, which suggests a role of local pH on the enzymatic activity.

77 NANOSCIENCE AND NANOTECHNOLOGY↗
DOE OSTI2022

Optimizing Sensor Count and Placement to Detect Bond Wire Lift-Offs and Surface Defects in High-Power IGBT Modules Using Low-Cost Piezo-Electric Resonators

This manuscript presents the most recent results and findings to identify bond wire lift-offs and surface defects in high-power isolated gate bipolar junction transistor (IGBT) modules. The authors of this manuscript formerly proposed a low-cost, piezoelectric resonator-based measurement unit to detect bond wire related degradation in larger IGBT modules. Since high-power IGBT modules are expensive, it was apparent that evaluating our proposed method by inducing controlled damage to fresh (new) IGBTs may not be cost-effective especially when multiple sets of data need to be captured by inducing damage to different levels. In order to overcome this limitation, IGBT bond wires have been mimicked using a 3D printed enclosure, a PCB, and copper wires with dimensions very closely resembling a real IGBT. Using this method, multiple test devices can be built at the cost of a real IGBT, and the proposed technique could be fine-tuned without damaging expensive, real IGBTs. Our recent findings can be used to determine real IGBT degradation and bond wire lift-offs using only two sensors, as opposed to six transducers used in the first iteration of the setup. In addition to optimizing the sensor count, we have also identified the best possible locations of these sensors by attempting multiple placements inside the IGBT casing.

condition monitoring↗
NASA NTRS1981

Research on design feasibility of high-power light-weight dc-to-dc converters for space power applications

Utilizing knowledge gained from past experience with experimental current-or-voltage step-up dc-to-dc converter power stages operating at output powers up to and in excess of 2 kW, a new experimental current-or-voltage step-up power stage using paralleled bipolar junction transistors (BJTs) as the controlled power switch, was constructed during the current reporting period. The major motivation behind the construction of this new experimental power stage was to improve the circuit layout so as to reduce the effects of stray circuit parasitic inductances resulting from excess circuit lead lengths and circuit loops, and to take advantage of the layout improvements which could be made when some recently-available power components, particularly power diodes and polypropylene filter capacitors, were incorporated into the design.

Wilson, T. G.↗
NASA NTRS1982

Polycrystalline silicon availability for photovoltaic and semiconductor industries

Markets, applications, and production techniques for Siemens process-produced polycrystalline silicon are surveyed. It is noted that as of 1982 a total of six Si materials suppliers were servicing a worldwide total of over 1000 manufacturers of Si-based devices. Besides solar cells, the Si wafers are employed for thyristors, rectifiers, bipolar power transistors, and discrete components for control systems. An estimated 3890 metric tons of semiconductor-grade polycrystalline Si will be used in 1982, and 6200 metric tons by 1985. Although the amount is expected to nearly triple between 1982-89, research is being carried out on the formation of thin films and ribbons for solar cells, thereby eliminating the waste produced in slicing Czolchralski-grown crystals. The free-world Si production in 1982 is estimated to be 3050 metric tons. Various new technologies for the formation of polycrystalline Si at lower costs and with less waste are considered. New entries into the industrial Si formation field are projected to produce a 2000 metric ton excess by 1988.

Ferber, R. R.↗
NASA NTRS1990

Neutron and gamma irradiation effects on power semiconductor switches

The performance characteristics of high power semiconductor switches subjected to high levels of neutron fluence and gamma dose must be known by the designer of the power conditioning, control and transmission subsystem of space nuclear power systems. Location and the allowable shielding mass budget will determine the level of radiation tolerance required by the switches to meet performance and reliability requirements. Neutron and gamma ray interactions with semiconductor materials and how these interactions affect the electrical and switching characteristics of solid state power switches is discussed. The experimental measurement system and radiation facilities are described. Experimental data showing the effects of neutron and gamma irradiation on the performance characteristics are given for power-type NPN Bipolar Junction Transistors (BJTs), and Metal-Oxide-Semiconductor Field Effect Transistors (MOSFETs). BJTs show a rapid decrease in gain, blocking voltage, and storage time for neutron irradiation, and MOSFETs show a rapid decrease in the gate threshold voltage for gamma irradiation.

Schwarze, G. E.↗
NASA NTRS1991

Neutron, gamma ray and post-irradiation thermal annealing effects on power semiconductor switches

The effects of neutron and gamma rays on the electrical and switching characteristics of power semiconductor switches must be known and understood by the designer of the power conditioning, control, and transmission subsystem of space nuclear power systems. The SP-100 radiation requirements at 25 m from the nuclear source are a neutron fluence of 10(exp 13) n/sq cm and a gamma dose of 0.5 Mrads. Experimental data showing the effects of neutrons and gamma rays on the performance characteristics of power-type NPN Bipolar Junction Transistors (BJTs), Metal-Oxide-Semiconductor Field Effect Transistors (MOSFETs), and Static Induction Transistors (SITs) are presented. These three types of devices were tested at radiation levels which met or exceeded the SP-100 requirements. For the SP-100 radiation requirements, the BJTs were found to be most sensitive to neutrons, the MOSFETs were most sensitive to gamma rays, and the SITs were only slightly sensitive to neutrons. Post-irradiation thermal anneals at 300 K and up to 425 K were done on these devices and the effectiveness of these anneals are also discussed.

Schwarze, G. E.↗