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The use of a laser diode as a light source for a schlieren system designed to study phase objects such as a wind-tunnel flow is explored. A laser diode schlieren photograph and a white light schlieren photograph (zirconium arc source) are presented for comparison. The laser diode has increased sensitivity, compared with light schlieren, without appreciable image degradiation, and is an acceptable source for schlieren flow visualization.
Family of high-performance, tunable diode lasers developed for use as local oscillators in passive laser heterodyne spectrometer. Diodes fabricated using standard IC processes include photolithography, selective etching and vacuum deposition of metals and insulators. Packaging refinements improved thermal-cycling characteristics of diodes and increased room-temperature shelf life.
The development of 20 GHz, double drift GaAs IMPATT diodes is described. Advances made in material growth, diodes fabrication technology and packaging, and circuit design and diode testing are documented.
Intersatellite links are expected to play an increasingly important role in future satellite systems. Improved components are required to properly utilize the wide bandwidth allocated for intersatellite link applications around 60 GHz. IMPATT diodes offer the highest potential performance as solid state power sources for a 60 GHz transmitter. Presently available devices do not have the desired power and efficiency. High efficiency, high power IMPATT diodes for intersatellite link applications are being developed by NASA and other government agencies. The development of high efficiency 60 GHz IMPATT diodes by NASA is described.
Although Li/CF cells and batteries have an excellent safety record, they are included with other battery systems that require additional safety precautions. One precaution suggested is the inclusion of shunt diodes into these batteries. The benefits of this addition are examined. All cells tested at elevated temperatures vent regardless of length of time between being fully discharged and reversed or inclusion of the diode in the system. Cells discharged at ambient temperatures all show a relatively quick reversal, but stabilize at voltages that are high enough that the diodes are not functioning. Cells tested at depressed temperatures reverse the deepest of all cells tested, with the deepest reversal occurring very early in the test and voltages recovering to above -0.60 volts near the end of the tests. Anode limited cells will eliminate the venting during hot reversal.
Intersatellite links are expected to play an increasingly important role in future satellite systems. Improved components are required to properly utilize the wide bandwidth allocated for intersatellite link applications around 60 GHz. IMPATT diodes offer the highest potential performance as solid state power sources for a 60 GHz transmitter. Presently available devices do not have the desired power and efficiency. High efficiency, high power IMPATT diodes for intersatellite link applications are being developed by NASA and other government agencies. This paper describes the development of high efficiency 60 GHz IMPATT diodes by NASA. These programs are cofunded by the U.S. Air Force, Space Division.
The tunable diode laser is now widely used in high resolution infrared spectroscopy studies, taking into account laboratory and industrial applications. The present investigation is concerned with advances related to laser performance and reliability. The advances are the result of improvements in materials and device technologies. Reliability data for broad-area Pb(1-x)Sn(x)Se lasers are considered along with performance improvements in stripe-geometry lasers, laser performance at wavelengths above 25 microns, and laser performance at wavelengths below 4 microns. Attention is given to tunable Pb-salt infrared diode lasers, mesa-stripe geometry lasers of Pb(1-x)Sn(x)Se and PbS(1-x)Se(x), and long wavelength diode laser emission observed in both Pb(1-x)Sn(x)Te and Pb(1-x)Sn(x)Se.
Recent progress in the development of high-power 60 GHz GaAs IMPATT diodes for communication links with high-data-rate satellites is discussed. One of the advantages of GaAs over Si as the material for the diodes are that GaAs is likely to have a higher output and efficiency than Si despite recent advances in Si technology. It is therefore in GaAs technology that research is currently concentrating. Some of the design strategies of the various companies working on the technology are described, including a pill process, MOCVD growth, and the use of diethy zinc as a dopant. Reliability testing of the diodes will be performed by NASA. Some of the alternatives to solid state amplifiers are discussed, including optical and traveling wave tube technology (TWT).
The evacuated wall coated sealed cell coupled with diode laser optical pumping offers a number of attractive potential advantages for use in Rb or Cs atomic frequency standards. An investigation of systematic effects is required to explore possible limitations of the technique. The use of diode laser optical pumping of 87 Rb in an evacuated wall coated sealed cell is presented. Experimental results/discussion to be presented include the signal strength and line broadening of the 0 - 0 hyperfine resonance as a function of light intensity for the D1 optical transitions (F - F prime) - (2 1 prime) and (2 - 2 prime), shift of the 0 - 0 hyperfine frequency as a function of laser intensity and de-tuning from optical resonance, and diode laser frequency stabilization techniques.
Polarization characteristics of AlGaAs laser diodes having various device geometries have been measured. Measurements were performed with the laser diodes operating under dc conditions. Results show that laser diodes having different device geometries have optical outputs that exhibit varying degrees of polarization purity. Implications of this result, with respect to incoherent polarization-beam combining, are addressed.
Two methods are described to obtain the value of the series resistance (R) of a Schottky diode from its forward I-V characteristic. The value of R is then used to plot the curve ln(I) versus V sub D (= V - IR) which becomes a straight line even if ln(I) versus V does not. The ideality factor n and the Schottky-barrier height of the diode then follow from the standard procedure. The main advantages of the methods are: (1) a linear regression can be used to calculate the value of R; (2) many data points are used over the whole data range, which raises the accuracy of the results, and (3) the validity of constant R assumption can be checked by the linearity of the ln (I) versus V sub D curve. The methods are illustrated on the experimental data of a real diode.
The development of a qualification test for modules bypass diodes is reviewed. Diode junction temperature is measured, indirectly, under laboratory ambient conditions, and extrapolated to field conditions. Criteria are given for diode reliability.
Design criteria have been developed for bypass diodes in p-n and Schottky barrier in photovoltaic applications. A test method for assessing conformity to the design criteria is described. Junction temperatures are defined in terms of expected worst-case field conditions, including ambient temperature and solar irradiance on the photovoltaic module. The rating criteria address the maximum allowable current and heat-sink characteristics of diodes mounted inside or outside the photovoltaic module. The method establishes worst-case module-to-diode thermal interfaces and may be adapted for laboratory or field-site experiments. A list of the design criteria is given.
Phase-coherent emission with negligible far-field supermodes produced by proposed surface-emitting laser-diode array stimulated by holographically directed emission from single master diode. To achieve same coherence and output power, single laser diode requires high power density, which substantially reduces working lifetime. Proposed integrated optical array useful in communications
A system capable of measuring and statistically analyzing wavelength and intensity fluctuations in pulsed laser diode output beams has been developed. The snapshot wavelength-intensity performance of laser diodes emitting discrete short-duration optical pulse is determined by isolating and recording individual pulses. Statistical processing of the resultant data generates information about the magnitude and/or frequency of occurrence of power variations or wavelength fluctuations in narrow optical bands. The system configuration along with plots depicting results based on measurements taken for various laser diodes are presented.
The output power from two ten-element laser diodes arrays has been efficiently summed in an external cavity to obtain a coherent, continuous wave beam. In this technique, laser emission from each front surface antireflection coated diode array is stimulated by injection of emission from a second such array. This method was also applied to single-element diode lasers. The output beam characteristics such as spectral distribution, far-field and near-field beam patterns, and overall efficiency have been measured.
Channeled-substrate-planar laser diodes from various wafers were observed to develop a node or dark spot in their near-field patterns after failure during lifetesting. 'Node' devices from each wafer were angle-lapped and stained in an attempt to uncover a physical mechanism for this common failure symptom. Optical microscopic examination of the beveled cross sections revealed that an intrusion, in the form of a spike at the tip of the zinc diffusion front, had penetrated into the active layer of these diodes. The node observed in the near-field pattern appears to be in a position correspondig to the location of the spike in the active region. In addition, cathodoluminescence measurements on other 'node' diodes revealed a dark line region approximately 2-micron-wide running parallel to and in the middle of the 5-micron contact stripe. It is believed that this dark line region is representative of an area of nonradiative recombination which occurs in the portion of the active layer containing the intrusion.
A detailed model of surface plasmon dispersion in the metal-oxide-metal tunnel diode is presented in order to clarify the spectral emission from this diode. The model predicts the location of the spectral peaks and the emission between the peaks by considering the effects of retardation on the surface plasmon. A nonradiative mode is found to play a major role in the transition from the visible to UV peaks in the diode spectra.