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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 181 records · Page 10
All sourcesNASA NTRSDOE OSTI
NASA NTRS1987

Binary synaptic connections based on memory switching in a-Si:H for artificial neural networks

A scheme for nonvolatile associative electronic memory storage with high information storage density is proposed which is based on neural network models and which uses a matrix of two-terminal passive interconnections (synapses). It is noted that the massive parallelism in the architecture would require the ON state of a synaptic connection to be unusually weak (highly resistive). Memory switching using a-Si:H along with ballast resistors patterned from amorphous Ge-metal alloys is investigated for a binary programmable read only memory matrix. The fabrication of a 1600 synapse test array of uniform connection strengths and a-Si:H switching elements is discussed.

Thakoor, A. P.↗
NASA NTRS1989

Variable-Resistivity Material For Memory Circuits

Nonvolatile memory elements packed densely. Electrically-erasable, programmable, read-only memory matrices made with newly-synthesized organic material of variable electrical resistivity. Material, polypyrrole doped with tetracyanoquinhydrone (TCNQ), changes reversibly between insulating or higher-resistivity state and conducting or low-resistivity state. Thin film of conductive polymer separates layer of row conductors from layer of column conductors. Resistivity of film at each intersection and, therefore, resistance of memory element defined by row and column, increased or decreased by application of suitable switching voltage. Matrix circuits made with this material useful for experiments in associative electronic memories based on models of neural networks.

Nagasubramanian, Ganesan↗
NASA NTRS1989

Memory Switches Based On MnO2-x Thin Films

Thin films of Mn02-x at intersections between metallic row and column conductors serve as switching elements for nonvolatile electronic memories. "On"-state resistance adjustable, and on-to-off transition irreversible. Elements electrically programmable and especially suitable for use in associative electronic memories based on neural-network concepts.

Ramesham, Rajeshuni↗
NASA NTRS1988

Precision cleaning methods for spacecraft applications

A small CO2 snow cleaning apparatus to clean both molecular films and particles from small and large components and surfaces was constructed. Various types of surfaces were cleaned using the CO2 technique. Vacuum deposited and sputtered metallic coatings such as germanium, aluminum, and silver and silicon wafers, and polished copper conical mirrors were purposely contaminated with everyday aerospace contaminants, including particle fallout and fingerprints. Precleaning characterization by Bidirectional Reflectance Distribution Function (BRDF), ellipsometry, nonvolatile residue, and microscopic particle evaluation served as evaluation of cleaning efficiency. Good results were obtained in trial application.

Ryan, L. E.↗
NASA NTRS1988

Comet Halley's colorful outbursts

Two preperihelion outbursts by Comet Halley were observed, each showing different brightness changes at 2.3, 3.6, 4.6 and 10.3 micrometers. Neither event was observed from beginning to end. The first observation on 8 Nov. 1985 lasted on the order of a day and was accompanied by a tail-like appendage recorded photographically. During the outburst the IR colors changed dramatically, showing no significant change at 10.3 micrometers but showing progressively more change at shorter wavelengths over a time scale of a few hours. The second outburst measurement extended over several days (10 to 13 Jan. 1986) during which time the intensities at the four wavelengths increased by roughly the same amount. Although the outbursts were of different duration, the IR measurements suggest that the first event involved volatile ice particles that evaporated, while the second was associated with long lived nonvolatile dust grains.

Lynch, David K.↗
NASA NTRS1988

The effects of atomic oxygen on polymeric materials

At the altitudes of low-earth orbit (LEO), atomic oxygen (AO) is the most abundant chemical species. This strong oxidizing agent reacts with virtually any organic material that is not already fully oxidized. Erosion by AO can be extensive and jeopardizes any protective coatings, thermal blankets, adhesives, and structural composites exposed on the exterior of satellites in LEO. Researchers prepared and tested organic materials for their susceptibility to AO using a commercial plasma asher which approximately simulates the oxygen effects in LEO. Experiments were performed on a polyimide, a polysulfone, and two epoxy adhesives into which low molecular-weight additives have been dissolved. Incorporated in the molecular structure of these additives are elements such as silicon whose nonvolatile oxides, which are formed on exposure to AO, remain as a coating on the surface to create a barrier between the remainder of the organic material and the AO. We find that the additives protect the materials, but the low solubility of some limit their utility. Concurrent studies are underway to measure the effect of the additives on the thermal expansion coefficients of the materials. Tows of aramid fibers, which are important components in the proposed tether satellite systems, have been eroded in the asher. The results which show that the square root of the mass remaining decreases linearly with the time of exposure (see the figure) are consistent with a constant rate of surface erosion. The tensile strength of these eroded tows decreases with time of exposure also; additional measurements are in progress.

Orwoll, Robert A.↗
NASA NTRS1989

Antistatic sprays

Antistatic sprays from several different manufacturers are examined. The sprays are examined for contamination potential (i.e., outgassing and nonvolatile residue), corrosiveness on an aluminum mirror surface, and electrostatic effectiveness. In addition, the chemical composition of the antistatic sprays is determined by infrared spectrophotometry, mass spectrometry, and ultraviolet spectrophotometry. The results show that 12 of the 17 antistatic sprays examined have a low contamination potential. Of these sprays, 7 are also noncorrosive to an aluminum surface. And of these, only 2 demonstrate good electrostatic properties with respect to reducing voltage accumulation; these sprays did not show a fast voltage dissipation rate however. The results indicate that antistatic sprays can be used on a limited basis where contamination potential, corrosiveness, and electrostatic effectiveness is not critical. Each application is different and proper evaluation of the situation is necessary. Information on some of the properties of some antistatic sprays is presented in this document to aid in the evaluation process.

Ming, James E.↗
NASA NTRS1987

Neural network based feed-forward high density associative memory

A novel thin film approach to neural-network-based high-density associative memory is described. The information is stored locally in a memory matrix of passive, nonvolatile, binary connection elements with a potential to achieve a storage density of 10 to the 9th bits/sq cm. Microswitches based on memory switching in thin film hydrogenated amorphous silicon, and alternatively in manganese oxide, have been used as programmable read-only memory elements. Low-energy switching has been ascertained in both these materials. Fabrication and testing of memory matrix is described. High-speed associative recall approaching 10 to the 7th bits/sec and high storage capacity in such a connection matrix memory system is also described.

Daud, T.↗
NASA NTRS1988

Feedforward, high density, programmable read only neural network based memory system

Neural network-inspired, nonvolatile, programmable associative memory using thin-film technology is demonstrated. The details of the architecture, which uses programmable resistive connection matrices in synaptic arrays and current summing and thresholding amplifiers as neurons, are described. Several synapse configurations for a high-density array of a binary connection matrix are also described. Test circuits are evaluated for operational feasibility and to demonstrate the speed of the read operation. The results are discussed to highlight the potential for a read data rate exceeding 10 megabits/sec.

Daud, Taher↗
NASA NTRS1989

Manganese oxide microswitch for electronic memory based on neural networks

A solid-state, resistance tailorable, programmable-once, binary, nonvolatile memory switch based on manganese oxide thin films is reported. MnO(x) exhibits irreversible memory switching from conducting (on) to insulating (off) state, with the off and on resistance ratio of greater than 10,000. The switching mechanism is current-triggered chemical transformation of a conductive MnO(2-Delta) to an insulating Mn2O3 state. The energy required for switching is of the order of 4-20 nJ/sq micron. The low switching energy, stability of the on and off states, and tailorability of the on state resistance make these microswitches well suited as programmable binary synapses in electronic associative memories based on neural network models.

Ramesham, R.↗
NASA NTRS1989

Evolution of comets into asteroids

This paper presents observational evidence, together with recent theoretical developments, supporting the hypothesis that at least some asteroids might be extinct or dormant cometary nuclei. The observations include the discovery of a number of apparent asteroids in chaotic Jupiter-crossing orbits; the IRAS discovery of 1983 TB, an asteroid in the same orbit as the Geminid meteor shower; the apparent low activity levels determined for several short-period comet nuclei including Comet Halley; and observations of possible cometary activity in some earth-crossing asteroids. Theoretical developments include explorations of dynamical mechanisms capable of delivering main-belt asteroids into earth-crossing orbits, and an understanding of possible processes which may affect comets during their long residence in the Oort cloud and lead to the formation of nonvolatile crusts before and after they enter the planetary system.

Weissman, Paul R.↗
NASA NTRS1989

The use of models to predict potential contamination aboard orbital vehicles

A model of fungal growth on air-exposed, nonnutritive solid surfaces, developed for utilization aboard orbital vehicles is presented. A unique feature of this testable model is that the development of a fungal mycelium can facilitate its own growth by condensation of water vapor from its environment directly onto fungal hyphae. The fungal growth rate is limited by the rate of supply of volatile nutrients and fungal biomass is limited by either the supply of nonvolatile nutrients or by metabolic loss processes. The model discussed is structurally simple, but its dynamics can be quite complex. Biofilm accumulation can vary from a simple linear increase to sustained exponential growth, depending on the values of the environmental variable and model parameters. The results of the model are consistent with data from aquatic biofilm studies, insofar as the two types of systems are comparable. It is shown that the model presented is experimentally testable and provides a platform for the interpretation of observational data that may be directly relevant to the question of growth of organisms aboard the proposed Space Station.

Boraas, Martin E.↗
NASA NTRS1990

Solid-state thin-film memistor for electronic neural networks

This paper reports on a tungsten-oxide-based, nonvolatile, electrically reprogrammable, variable resistance device as an analog synaptic memory connection for electronic neural networks. A voltage controlled, reversible injection of H(+) ions in electrochromic thin films of WO3 is utilized to modulate its resistance. A hygroscopic thin film of Cr2O3 is the source of H(+) ions. The resistance of the device can be tailored and stabilized over a wide dynamic range (about 4 orders of magnitude), and the programming speed is modulated by the control voltage. The suitability of such a device in terms of its response speed, reversibility, stability, and cyclability for its use in electronic neural networks is discussed.

Thakoor, S.↗
NASA NTRS1990

Programmable synaptic devices for electronic neural nets

The architecture, design, and operational characteristics of custom VLSI and thin film synaptic devices are described. The devices include CMOS-based synaptic chips containing 1024 reprogrammable synapses with a 6-bit dynamic range, and nonvolatile, write-once, binary synaptic arrays based on memory switching in hydrogenated amorphous silicon films. Their suitability for embodiment of fully parallel and analog neural hardware is discussed. Specifically, a neural network solution to an assignment problem of combinatorial global optimization, implemented in fully parallel hardware using the synaptic chips, is described. The network's ability to provide optimal and near optimal solutions over a time scale of few neuron time constants has been demonstrated and suggests a speedup improvement of several orders of magnitude over conventional search methods.

Moopenn, A.↗
NASA NTRS1991

Ferroelectric Memory Capacitors For Neural Networks

Thin-film ferroelectric capacitors proposed as nonvolatile analog memory devices. Intended primarily for use as synaptic connections in electronic neural networks. Connection strengths (synaptic weights) stored as nonlinear remanent polarizations of ferroelectric films. Ferroelectric memory and interrogation capacitors combined into memory devices in vertical or lateral configurations. Photoconductive layer modulated by light provides variable resistance to alter bias signal applied to memory capacitor. Features include nondestructive readout, simplicity, and resistance to ionizing radiation. Interrogated without destroying stored analog data. Also amenable to very-large-scale integration. Allows use of ac coupling, eliminating errors caused by dc offsets in amplifier circuits of neural networks.

Thakoor, Sarita↗
NASA NTRS1991

Fast Magnetoresistive Random-Access Memory

Magnetoresistive binary digital memories of proposed new type expected to feature high speed, nonvolatility, ability to withstand ionizing radiation, high density, and low power. In memory cell, magnetoresistive effect exploited more efficiently by use of ferromagnetic material to store datum and adjacent magnetoresistive material to sense datum for readout. Because relative change in sensed resistance between "zero" and "one" states greater, shorter sampling and readout access times achievable.

Wu, Jiin-Chuan↗
NASA NTRS1991

Stacked-Gate FET's For Analog Memory Elements

Three-terminal, double-stacked-gate field-effect transistor (FET), developed as analog memory element. Particularly suited for use as synapse with variable connection strength in electronic neural network. Provides programmable, nonvolatile resistive connection, somewhat in manner of porous-gate FET described in "Porous-Floating-Gate Field-Effect Transistor" (NPO-17532). Resembles commercial erasable programmable read-only memory (EPROM) device, except for thickness of layers of silicon dioxide electrically isolating gates. Either p-channel or n-channel device.

Thakoor, Anilkumar P.↗
NASA NTRS1991

Magnetic Analog Random-Access Memory

Proposed integrated, solid-state, analog random-access memory base on principle of magnetic writing and magnetoresistive reading. Current in writing conductor magnetizes storage layer. Remanent magnetization in storage layer penetrates readout layer and detected by magnetoresistive effect or Hall effect. Memory cells are part of integrated circuit including associated reading and writing transistors. Intended to provide high storage density and rapid access, nonvolatile, consumes little power, and relatively invulnerable to ionizing radiation.

Katti, Romney R.↗