Search NASA⌕ Search

SEARCH · Search NASA

Results for “sapphire”

Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

Quote a phrase for an exact phrase match. Source license links do not imply unrestricted reuse.

At least 181 records · Page 10
All sourcesNASA NTRSDOE OSTI
DOE OSTI2020

Effects of cation stoichiometry on surface morphology and crystallinity of ZnGeN 2 films grown on GaN by metalorganic chemical vapor deposition

ZnGeN 2 films were grown on GaN-on-sapphire templates via metalorganic chemical vapor deposition. Energy dispersive X-ray spectroscopy was used to estimate the Zn/(Zn+Ge) composition ratio in the films. This ratio decreased with increase in growth temperature but increased with increase in total reactor pressure or Zn/Ge precursor flow rate ratio. Systematic mapping of these key growth parameters has allowed us to identify the growth window to achieve ZnGeN 2 with stoichiometric cation composition. Compositional and statistical analyses performed on data acquired from atom probe tomography provided insight into the local compositional homogeneity. The cations Zn and Ge did not demonstrate segregation or clustering at the sub-nanometer level. Based on X-ray diffraction 2θ-ω scan profiles and transmission electron microscope nano-diffraction patterns, the films with near-stoichiometric cation ratios were single crystalline with planar surfaces, whereas zinc-rich or zinc-poor films were polycrystalline with nonplanar surfaces. The growth direction of the single crystalline ZnGeN 2 films on GaN templates was along the c-axis. Room temperature Raman spectra showed features associated with the phonon density of states, indicating the presence of cation disorder in the lattice. A cathodoluminescence peak associated with transitions involving deep level defects was observed around 640 nm. The intensity of this peak increased by almost 2.5 times as the temperature was reduced to 77 K from room temperature. A similar peak was observed in photoluminescence spectra collected at 80 K.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2020

Wide bandwidth frequency-domain thermoreflectance: Volumetric heat capacity, anisotropic thermal conductivity, and thickness measurements

A frequency-domain thermoreflectance (FDTR) system with a frequency range of 1 Hz to 75 MHz is presented. The wide bandwidth of pump modulation frequency enables enhanced simultaneous thermophysical property characterization of bulk and thin-film materials. The wide bandwidth FDTR system is demonstrated with simultaneous measurements of in-plane and cross-plane thermal conductivities of sapphire and muscovite mica, thickness and thermal conductivity of gold/titanium thin films, and isotropic thermal conductivity and volumetric heat capacity of lithium niobate and silicon. Thermophysical properties measured with FDTR are compared to literature values or independent measurements for verification. Finally, at low frequencies, a negligible error was achieved in the numerical integration of the heat diffusion equation with a Gauss–Legendre quadrature method solved with 400 integration points and an upper integration limit of 16weff, where weff is the effective pump–probe 1/e2 radius.

Ziade, Elbara (ORCID:0000000249020497)↗
DOE OSTI2020

Temperature-dependent growth of hexagonal and monoclinic gallium sulfide films by pulsed-laser deposition

We demonstrate the selective, pulsed-laser deposition of hexagonal GaS and monoclinic Ga2S3 films on sapphire substrates from a single Ga 2 S 3 target in high-vacuum conditions. Growth at substrate temperatures below 550 °C causes GaS film formation, which indicates non-stoichiometric transfer from the target to the film. Surprisingly, stoichiometric transfer occurs at substrate temperatures above 650 °C with monoclinic Ga 2 S 3 as the preferred, higher S-content phase. Through a series of growth and annealing experiments, we show that GaS nucleation under S-deficient conditions leads to the preferred growth of this layered, hexagonal phase below 550 °C. Furthermore, GaS films annealed above 650 °C under high vacuum are transformed to Ga 2 S 3 , reflecting the greater stability of the monoclinic phase. By first growing Ga 2 S 3 at a higher temperature and subsequently growing GaS at a lower temperature, we can fabricate GaS/Ga 2 S 3 heterostructures in a single growth process.

36 MATERIALS SCIENCE↗
DOE OSTI2021

An all-digital associated particle imaging system for the 3D determination of isotopic distributions

Associated particle imaging (API) is a non-destructive nuclear technique for the 3D determination of isotopic distributions. By detecting the alpha particle associated with the emitted neutron in the deuterium–tritium fusion reaction with a position- and time-resolving detector, the direction of the 14.1 MeV neutron and its time of emission can be determined. Employing this method, isotope characteristic gamma rays emitted in inelastic neutron scattering events can be correlated with the neutron interaction location. Here, an API system consisting of a sealed-type neutron generator, gamma detectors, and a position-sensitive alpha detector was designed, constructed, and characterized. The system was tested with common soil elements and shown to be sensitive to 12 C, 16 O, 28 Si, 27 Al, and 56 Fe. New aspects of our approach are the use of a yttrium–aluminum–perovskite scintillator, using a sapphire window instead of a fiber-optic faceplate for light transport to the photomultiplier, and the all-digital data acquisition system. We present a description of the system with simulations and experimental results that show a position resolution on the alpha detector of 1 mm, a depth resolution using a LaBr 3 detector of 6.2 cm, and an angular resolution of 4.5°. Additionally, we present single-element gamma response measurements for the elements mentioned above together with a comparison to Monte Carlo simulations (MCNP6).

47 OTHER INSTRUMENTATION↗
DOE OSTI2021

Ultra-short pulse generation from mid-IR to THz range using plasma wakes and relativistic ionization fronts

In this work, we discuss numerical and experimental results on frequency downshifting and upshifting of a 10 μ m infrared (IR) laser to cover the entire wavelength (frequency) range from λ = 1 to 150 μ m ( ν = 300–2 THz) using two different plasma techniques. The first plasma technique utilizes frequency downshifting of the drive laser pulse in a nonlinear plasma wake. Based on this technique, we have proposed and demonstrated that in a tailored plasma structure, multi-millijoule energy, single-cycle, long-wavelength IR (3–20 μ m) pulses can be generated by using an 810 nm Ti:sapphire drive laser. Here, we extend this idea to the THz frequency regime. We show that sub-joule, terawatts, single-cycle terahertz (2–12 THz or 150–25 μ m) pulses can be generated by replacing the drive laser with a picosecond 10 μ m CO 2 laser and a different shaped plasma structure. The second plasma technique employs frequency upshifting by colliding a CO 2 laser with a rather sharp relativistic ionization front created by ionization of a gas in less than half cycle (17 fs) of the CO 2 laser. Even though the electrons in the ionization front carry no energy, the frequency of the CO 2 laser can be upshifted due to the relativistic Doppler effect as the CO 2 laser pulse enters the front. The wavelength can be tuned from 1 to 10 μ m by simply changing the electron density of the front. While the upshifted light with 5 < λ ( μ m ) < 10 propagates in the forward direction, that with 1 < λ ( μ m ) < 5 is back-reflected. These two plasma techniques seem extremely promising for covering the entire molecular fingerprint region.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗
DOE OSTI2021

Effect of sample anisotropy on scanning near-field optical microscope images

Scattering-type scanning near-field optical microscopy (s-SNOM) has been widely used to characterize strongly correlated electronic, two dimensional, and plasmonic materials, and it has enormous potential for biological applications. Many of these materials exhibit anisotropic responses that complicate the extraction of dielectric constants from s-SNOM measurements. Here, we generalize our recently developed approach for retrieving the near-field scattering signal from isotropic systems and apply it to anisotropic dielectrics. Specifically, we compare our theoretical results with experimental measurements on modestly anisotropic sapphire that exhibit strong resonances at the infrared frequency range. Good agreement with the experimental result is found. Finally, our result is important for understanding the near-field response of low damping, anisotropic polaritonic states in dielectric media.

36 MATERIALS SCIENCE↗
DOE OSTI2021

Equation-of-state, sound speed, and reshock of shock-compressed fluid carbon dioxide

Mechanical equation-of-state data of initially liquid and solid CO2 shock-compressed to terapascal conditions are reported. Diamond-sapphire anvil cells were used to vary the initial density and state of CO2 samples that were then further compressed with laser-driven shock waves, resulting in a data set from which precise derivative quantities, including Grüneisen parameter and sound speed, are determined. Reshock states are measured to 800 GPa and map the same pressure-density conditions as the single shock using different thermodynamic paths. The compressibility data reported here do not support current density-functional-theory calculations, but are better represented by tabular equation-of-state models.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗
DOE OSTI2021

Rare-earth orbital moment contributions to the magnetic anisotropy in magnetostrictive Tb0.3Dy0.7Fe2

Soft x-ray Magnetic Circular Dichroism spectroscopy at the Dy and Tb M4,5 and the Fe L2,3 edges was performed on a sputter deposited polycrystalline Terfenol-D (Tb0.3Dy0.7Fe2) film on sapphire substrates at temperatures from 100 to 300 K to evaluate the elementwise contribution to the magnetocrystalline anisotropy and coercive field. The elemental spin and orbital magnetic moments were calculated using the x-ray Magnetic Circular Dichroism sum rules. As temperatures decreased, the Tb and Fe moments plateau at 200 K with values of 7.6 μB/atom and 1.8 μB/atom, respectively, while the Dy moment increases to 8.9 μB/atom at 100 K. Between 300 and 200 K, the change in magnetic anisotropy is dominated by thermally induced magnetoelastic effects while for temperatures below 200 K magnetocrystalline anisotropy (MCA) changes are dominant. The MCA changes below 200 K appear to be due to increases in the Dy orbital moment with decreasing temperature in this temperature regime.

Shirazi, Paymon (ORCID:0000000256954597)↗
DOE OSTI2022

Electron Weibel instability induced magnetic fields in optical-field ionized plasmas

Generation and amplification of magnetic fields in plasmas is a long-standing topic that is of great interest to both plasma and space physics. The electron Weibel instability is a well-known mechanism responsible for self-generating magnetic fields in plasmas with temperature anisotropy and has been extensively investigated in both theory and simulations, yet experimental verification of this instability has been challenging. Recently, we demonstrated a new experimental platform that enables controlled initialization of highly nonthermal and/or anisotropic plasma electron velocity distributions via optical-field ionization. Using an external electron probe bunch from a linear accelerator, the onset, saturation, and decay of the self-generated magnetic fields due to electron Weibel instability were measured for the first time to our knowledge. In this paper, we will first present experimental results on time-resolved measurements of the Weibel magnetic fields in non-relativistic plasmas produced by Ti:Sapphire laser pulses (0.8 μm) and then discuss the feasibility of extending the study to a quasi-relativistic regime by using intense CO 2 (e.g., 9.2 μm) lasers to produce much hotter plasmas.

36 MATERIALS SCIENCE↗
DOE OSTI2023

Structure of V-defects in long wavelength GaN-based light emitting diodes

The V-defect is a naturally occurring inverted hexagonal pyramid structure that has been studied in GaN and InGaN growth since the 1990s. Strategic use of V-defects in pre-quantum well superlattices or equivalent preparation layers has enabled record breaking efficiencies for green, yellow, and red InGaN light emitting diodes (LEDs) utilizing lateral injection of holes through the semi-polar sidewalls of the V-defects. In this article, we use advanced characterization techniques such as scattering contrast transmission electron microscopy, high angle annular dark field scanning transmission electron microscopy, x-ray fluorescence maps, and atom probe tomography to study the active region compositions, V-defect formation, and V-defect structure in green and red LEDs grown on (0001) patterned sapphire and (111) Si substrates. We identify two distinct types of V-defects. The “large” V-defects are those that form in the pre-well superlattice and promote hole injection, usually nucleating on mixed (Burgers vector b = ±a±c⁠) character threading dislocations. In addition, “small” V-defects often form in the multi-quantum well region and are believed to be deleterious to high-efficiency LEDs by providing non-radiative pathways. The small V-defects are often associated with basal plane stacking faults or stacking fault boxes. Furthermore, we show through scattering contrast transmission electron microscopy that during V-defect filling, the threading dislocation, which runs up the center of the V-defect, will “bend” onto one of the six {10$\overline{1}$1} semi-polar planes. In conclusion, this result is essential to understanding non-radiative recombination in V-defect engineered LEDs.

42 ENGINEERING↗
DOE OSTI2023

Low temperature absolute internal quantum efficiency of InGaN-based light-emitting diodes

A method to reveal low temperature absolute internal quantum efficiency of an InGaN-based light-emitting diode (LED) is reported. Structural (via scanning electron and atomic force microscopies, x-ray diffraction, and Raman spectroscopy) and optical (via temperature- and power-dependent photoluminescence) properties of InGaN-based blue LEDs are coupled with a channel-based recombination model, which reveals the low temperature absolute internal quantum efficiency of the LED on traditional sapphire and emerging Si (111) substrates as 27.5% and 71.1%, respectively. High low-temperature absolute internal quantum efficiency of the former is attributed to its lower defect density and less strain. Furthermore, our results show assuming perfect (i.e., 100%) internal quantum efficiency in an InGaN-based LED at low temperatures could be misleading, and using negative thermal quenching properties of defect luminesce bands with a channel-based recombination model can be a method to quantify LED's less than ideal low temperature internal quantum efficiencies.

36 MATERIALS SCIENCE↗
DOE OSTI2023

Probing and controlling oxygen impurity diffusion in h -BN semi-bulk crystals

Combining its unique features of ultrawide bandgap (UWBG) and two-dimensional nature, h-BN has been explored for emerging applications such as deep ultraviolet optoelectronic devices and single photon emitters. One of the unusual applications of h-BN is for solid-state neutron detectors by utilizing the property of high thermal neutron capture cross section of B-10 as well as its UWBG properties. Although a record high detection efficiency of 59% has been attained by h-BN detectors, the understanding/minimization of defects and impurities is still needed to further advance the h-BN material and detector technologies. We report metal organic chemical vapor deposition growth and oxygen (O) impurity diffusion in thick h-BN. The diffusion coefficient (D) of O impurities has been measured via the evolution of an oxygen related emission with the etching depth, providing a value of D of ∼ 2 × 10−13 cm2/s at 1450 °C and supporting the interpretation that oxygen in h-BN is a substitutional donor. A multiple-buffer-layer approach was employed to mitigate to a certain degree the issue of oxygen diffusion from sapphire substrate during growth. It was demonstrated that the performance of h-BN neutron detectors fabricated from the wafer incorporating multiple buffer layers was significantly improved, as manifested by the enhanced thermal neutron detection efficiency. The advancement of the crystal growth technology of h-BN semi-bulk crystals creates applications in optoelectronic and power electronic devices utilizing the UWBG semiconductor properties of h-BN, while high efficiency h-BN neutron detectors have the potential to supplant the traditional He-3 gas detectors in various application areas by offering the obvious advantages of UWBG semiconductor technologies.

Physics↗
DOE OSTI2023

High field dielectric response in κ-Ga 2 O 3 films

κ-Ga 2 O 3 has been predicted to be a potential ferroelectric material. In this work, undoped Ga 2 O 3 films were grown by either plasma-enhanced atomic layer deposition (PEALD) or metal organic chemical vapor deposition (MOCVD) on platinized sapphire substrates. 50 nm thick PEALD films with a mixture of κ-Ga 2 O 3 and β-Ga 2 O 3 had a relative permittivity of ~27, a loss tangent below 2%, and high electrical resistivity up to ~1.5 MV/cm. 700 nm thick MOCVD films with predominantly the κ-Ga 2 O 3 phase had relative permittivities of ~18 and a loss tangent of 1% at 10 kHz. Neither film showed compelling evidence for ferroelectricity measured at fields up to 1.5 MV/cm, even after hundreds of cycles. Here, piezoresponse force microscopy measurements on bare κ-Ga 2 O 3 showed a finite piezoelectric response that could not be reoriented for electric fields up to 1.33 MV/cm.

36 MATERIALS SCIENCE↗
DOE OSTI2024

The Simons Observatory: Cryogenic half wave plate rotation mechanism for the small aperture telescopes

We present the requirements, design, and evaluation of the cryogenic continuously rotating half-wave plate (CHWP) for the Simons Observatory (SO). SO is a cosmic microwave background polarization experiment at Parque Astronómico de Atacama in northern Chile that covers a wide range of angular scales using both small (Ø0.42 m) and large (Ø6 m) aperture telescopes. In particular, the small aperture telescopes (SATs) focus on large angular scales for primordial B-mode polarization. To this end, the SATs employ a CHWP to modulate the polarization of the incident light at 8 Hz, suppressing atmospheric 1/f noise and mitigating systematic uncertainties that would otherwise arise due to the differential response of detectors sensitive to orthogonal polarizations. The CHWP consists of a 505 mm diameter achromatic sapphire HWP and a cryogenic rotation mechanism, both of which are cooled down to ~50 K to reduce detector thermal loading. Under normal operation, the HWP is suspended by a superconducting magnetic bearing and rotates with a constant 2 Hz frequency, controlled by an electromagnetic synchronous motor. We find that the number of superconductors and the number of magnets that make up the superconducting magnetic bearing are important design parameters, especially for the rotation mechanism’s vibration performance. The rotation angle is detected through an angular encoder with a noise level of 0.07 μrad √ $\overline{s}$. During a cooldown process, the rotor is held in place by a grip-and-release mechanism that serves as both an alignment device and a thermal path. In this paper, we provide an overview of the SO SAT CHWP: its requirements, hardware design, and laboratory performance.

47 OTHER INSTRUMENTATION↗
DOE OSTI2024

Design of a high-temperature cell for cobalt-60 irradiations of aqueous solutions with in situ UV–visible spectroscopy

To understand the speciation of solutes in aqueous solutions in high temperature radiation environments, we report the design and fabrication of a custom-built, high temperature (≤300 °C) titanium irradiation cell with in situ optical spectroscopy capabilities, as afforded by coupled fiber optic cables. The wetted surfaces of the 8-inch tall cylindrical cell with 3.5 in. diameter are entirely made of titanium, sapphire, and gold, which are chemically and radiolytically inert. The initial benchmarking results are reported, including the baseline spectrum of deionized water as a function of temperature, the stability of a spectrum over 4 h at 100 °C, and an irradiated Fricke dosimetry solution under ambient irradiator temperature conditions (27.0 ± 0.5 °C). Further, the average gamma radiation dose rate in the cell in its current configuration is 26.1 ± 1.3 Gy min -1 . This cell has application in studying several processes throughout the nuclear fuel cycle, including the reactor coolant behavior.

38 RADIATION CHEMISTRY, RADIOCHEMISTRY, AND NUCLEA↗
DOE OSTI2024

Spatiotemporal dispersion compensation for a 200-THz noncollinear optical parametric amplifier

A noncollinear optical parametric amplifier (NOPA) can produce few-cycle femtosecond laser pulses that are ideally suited for time-resolved optical spectroscopy measurements. However, the nonlinear-optical process giving rise to ultrabroadband pulses is susceptible to spatiotemporal dispersion problems. Here, we detail refinements, including chirped-pulse amplification (CPA) and pulse-front matching (PFM), that minimize spatiotemporal dispersion and thereby improve the properties of ultrabroadband pulses produced by a NOPA. Here, the description includes a rationale behind the choices of optical and optomechanical components, as well as assessment protocols. We demonstrate these techniques using a 1 kHz, second-harmonic Ti:sapphire pump configuration, which produces ~5-fs duration pulses that span from about 500 to 800 nm with a bandwidth of about 200 THz. To demonstrate the utility of the CPA-PFM-NOPA, we measure vibrational quantum beats in the transient–absorption spectrum of methylene blue, a dye molecule that serves as a reference standard.

47 OTHER INSTRUMENTATION↗
DOE OSTI2024

Ferroelectric Al1 − xBxN–GaN heterostructures

This report demonstrates Al0.93B0.7N thin films grown epitaxially on n-type GaN (0002)/c-plane sapphire substrates by reactive magnetron sputtering at 300 °C. At 200 nm film thickness, the Al0.93B0.07N layers exhibit partially relaxed substrate-induced epitaxial strain, a 0.16° wide (0002) rocking curve, in-plane crystallographic registry, and sub-nanometer surface roughness. Electrically, the stack shows robust hysteresis over three frequency decades, a remanent polarization of ∼125 μC/cm2, a strongly frequency dependent coercive field, highly uniform dc leakage currents, and endurance >106 field cycles. This report validates possibilities for ferroelectric nitride integration into conventional III-nitride heterostructures with high crystalline fidelity, high electrical resistivity, and persistent hysteresis. Such materials are synthesizable at thermal budgets and temperatures compatible with back-end-of-the-line boundary conditions.

Physics↗
DOE OSTI2024

Dislocation half-loop control for optimal V-defect density in GaN-based light emitting diodes

V-defects are morphological defects that typically form on threading dislocations during epitaxial growth of $(0001)$-oriented GaN layers. A V-defect is a hexagonal pyramid-shaped depression with six {$10\bar{1}1$}-oriented sidewalls. These semipolar sidewalls have a lower polarization barrier than the polarization barriers present between the polar c-plane quantum wells and quantum barriers and can laterally inject carriers directly into quantum wells in GaN-based light emitting diodes (LEDs). This is especially important, as the high polarization field in c-plane GaN is a significant factor in the high forward voltage of GaN LEDs. The optimal V-defect density for efficient lateral carrier injection in a GaN LED (∼10 9 cm −2 ) is typically an order of magnitude higher than the threading dislocation density of GaN grown on patterned sapphire substrates (∼10 8 cm −2 ). Pure-edge dislocation loops have been known to exist in GaN, and their formation into large V-defects via low-temperature growth with high Si-doping has recently been studied. Here, in this work, we develop a method for pure-edge threading dislocation half-loop formation and density control via disilane flow, growth temperature, and thickness of the half-loop generation layer. We also develop a method of forming the threading dislocation half-loops into V-defects of comparable size to those originating from substrate threading dislocations.

Crystallographic defects↗