Development of space-stable thermal-control coatings Triannual report, Jan. 20 - Jun. 20, 1966
Thermal stability of double zirconium silicate pigment coatings, and of potassium silicate treated zinc oxide and silicone paints
SILICONE↗
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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.
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Microwave discharge deposition of oxide films at low temperatures.
Microwave discharge technique for depositing noncrystalline oxide films of silicon, germanium, boron, titanium and selenium on substrates by decomposing compounds by oxygen plasma
GAS DISCHARGE↗
Silicon difluoride, a carbene analog - Its reactions and properties
Silicon difluoride reactions and properties, describing production from commercial silicon tetrafluoride and versatility of reactions with organic and inorganic compounds
Margrave, J. L.↗
Defect Density Comparison of Detached versus Attached Bridgman Grown Germanium Crystals
Semiconductor Bridgman growth without contact between the growing crystal and the growth ampoule has been observed on Earth in the last few years during several experiments. Previously, this so-called detached or dewetted growth phenomenon occurred preferentially under microgravity conditions due to the absence of the hydrostatic pressure. Many theoretical as well as experimental investigations helped to provide a better understanding of the mechanism and to identify the parameters leading to the detachment. Thus, recent attempts to get stable detached growth under terrestrial conditions by Duffar et al. growing III-V compounds and our own group with germanium and germanium-silicon alloys were frequently successful. At this conference we present the results of several germanium growth experiments performed in pyrolytic boron nitride containers. To exert an influence on the pressure ratio above and below the melt we used closed-bottom and open-bottom containers. This resulted in mainly detached-grown single crystals with the closed-bottom crucibles and attached single crystals with the open-bottom tubes. Evidence of detached growth is obtained from the crystal surface with a combination of axial profilometer scans and optical and electron microscopy. Detailed investigations of the defect structure, which is the main focus of this presentation, have shown an improvement of the crystal quality in the detached-grown samples, with a strong reduction of the etch pit density by about two orders of magnitude.
Schweizer, M.↗
High-performance liquid chromatography of oligoguanylates at high pH
Because of the stable self-structures formed by oligomers of guanosine, standard high-performance liquid chromatography techniques for oligonucleotide fractionation are not applicable. Previously, oligoguanylate separations have been carried out at pH 12 using RPC-5 as the packing material. While RPC-5 provides excellent separations, there are several limitations, including the lack of a commercially available source. This report describes a new anion-exchange high-performance liquid chromatography method using HEMA-IEC BIO Q, which successfully separates different forms of the guanosine monomer as well as longer oligoguanylates. The reproducibility and stability at high pH suggests a versatile role for this material.
Non-NASA Center↗
Self-assembled III-V quantum dots: potential for silicon optoelectronics
The basic optoelectronic properties of self-forming InGaAs/InAlAs QDs are examined in parallel with their device implementation. Recent results showing remarkably good tolerance to radiation induced point defects and good luminescence emission from InAs/InGaAs QDs grown on dislocationarrays are discussed in terms of an enabling technology which will allow optelectronics integration with silicon technology.
nanotechnologies quantum dot devices heteroepitaxy↗
Degradation Studies of Silicone Rubbers in Direct Contact with Corrosive Solids Under Compression
Silicone elastomers are polymer materials widely used within the complex, serving as cushions, adhesives, binders, and potting compounds. Excellent high-temperature resistance combined with low-temperature flexibility, high resistance to chemicals and long-term age-related stability, make silicones first-choice materials in many application areas. However, the siloxane bonds comprising the backbone of silicone elastomers are susceptible to hydrolysis when catalytic amounts of acid or base are present. Hydrolysis is a form of degradation that results in chain-cleavage and rearrangement reactions, which can manifest in changes to the physical response and mechanical properties of the elastomer. This task aims to assess and quantify the extent of degradation and/or corrosion of silicone elastomer materials when placed in direct compressive contact with an Arrhenius base under varying environments (oxidative/nonoxidative, relative humidity, temperature, time, etc.).
36 MATERIALS SCIENCE↗
GaAs and 3-5 compound solar cells status and prospects for use in space
Gallium arsenide solar cells equal or supass the best silicon solar cells in efficiency, radiation resistance, annealability, and in the capability to produce usable power output at elevated temperatures. NASA has been involved in a long range research and development program to capitalize on these manifold advantages, and to explore alternative III-V compounds for additional potential improvements. The current status and future prospects for research and development in this area are reviewed and the progress being made toward development of GaAs cells suitable for variety of space missions is discussed. Cell types under various stages of development include n(+)/p shallow homojunction thin film GaAs cells, x100 concentration ratio p/n and n/p GaAs small area concentrator cells, mechanically-stacked, two-junction tandem cells, and three-junction monolithic cascade cells, among various other cell types.
Flood, D. J.↗
Removing Contamination from Genesis Sapphire Collectors by Polishing
The Genesis Solar Wind Sample Re-turn Mission used a variety of materials as solar wind (SW) collectors. “Sapphire”, which is single crystal corundum, was ~6.7% of the collector material flown. But, a much higher percentage of Genesis sapphire collectors (SAP) survived the crash of the sample-return capsule as SAP is chemically inert, physically tough, and hard (MOHS 9, by definition). In fact, 39 sapphire fragments of bulk SW collector having areas ≥60 sq mm are available in JSC’s Genesis online catalog, whereas only 1 similarly sized silicon fragment is available (accessed 1/1/2020). In spite of the ease of accessing larger fragments, sapphire has not been popular among Genesis re-searchers because it is an electrical insulator (making SIMS more difficult) and its chemical inertness, high melting point and high hardness precludes the use of many mass-spectroscopic techniques. Recently, as alternative techniques for measuring Genesis samples are developed (e.g., synchrotron TXRF, INAA, laser ablation mass spectroscopy), more researchers are choosing to analyze sapphire. Thus, a number of researchers are actively studying how to best remove contamination from the Genesis sapphire surfaces. This report extends the task in Schmeling et al. that used polishing compounds to remove contamination from Genesis sapphire and focuses on contaminants (welded silicon, aluminum) that current chemical methods find recalcitrant.
M. Schmeling↗
Etching Silicon Films With Xenon Difluoride
Microscopic circuit structures prepared for probing. Xenon difluoride removes relatively large amounts of silicon from integratedcircuit or solar-cell structures while leaving SiO2, Si3N4, Al2O3, and other compounds intact. In Etching Apparatus, solid XeF2 sublimated in vacuum, then allowed to flow over sample at controlled rate and pressure. Wafer etched from back to expose SiO2 and Al layers for spectroscopic analysis of SiO2/Al interface. Using XeF2 technique, silicon wafer with oxide layer reduced in thickness from standard 300 micrometer to as little as 10 nanometer without adversely affecting oxide.
Hecht, M. H.↗
Investigation of the silicon coated film characteristics on tungsten surface in EAST fusion device
Siliconization using 10 % SiD 4 + 90 % He assisted by ion cyclotron range of frequency discharge (ICRF) or glow discharge (GD) was performed in EAST with full tungsten (W) diverters. It was found that the coated Si film on W sample at a higher baking temperature (160 °C) was smoother than that at a lower baking temperature (60 °C). This was mainly because physically adsorbed gaseous impurities were released at a higher baker temperature. This process improved the adhesion between the film and the surface of W. An increase in the ICRF working power from 20 kW to 40 kW further increased the Si content and the film thickness by 1.5 times. The cleaning efficiency of ICRF on the surface of the W sample before siliconization was higher at 40 kW than that at 20 kW, which facilitated the removal of oxides and other compounds from the surface of W. The ratio of silicon/oxygen (Si/O) and the thickness improved considerably due to greater ionization and deposition of SiD 4 . Additionally, siliconization via GD was more uniform and 1.5 nm thicker than that via ICRF, which was because of the greater working gas pressure, coating duration, and homogeneity in GD. These results might be used as a reference for evaluating the effect of siliconization on plasma performance and its application in fusion devices.
70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗
Study of air pollutant detectors
The application of field ionization mass spectrometry (FIMS) to the detection of air pollutants was investigated. Current methods are reviewed for measuring contaminants of fixed gases, sulfur compounds, nitrogen oxides, hydrocarbons, and particulates. Two enriching devices: the dimethyl silicone rubber membrane separator, and the selective adsorber of polyethylene foam were studied along with FIMS. It is concluded that the membrane enricher system is not a suitable method for removing air pollutants. However, the FIMS shows promise as a useable system for air pollution detection.
Gutshall, P. L.↗
Adhesion of Silicone Elastomer Seals for NASA's Crew Exploration Vehicle
Silicone rubber seals are being considered for a number of interfaces on NASA's Crew Exploration Vehicle (CEV). Some of these joints include the docking system, hatches, and heat shield-to-back shell interface. A large diameter molded silicone seal is being developed for the Low Impact Docking System (LIDS) that forms an effective seal between the CEV and International Space Station (ISS) and other future Constellation Program spacecraft. Seals between the heat shield and back shell prevent high temperature reentry gases from leaking into the interface. Silicone rubber seals being considered for these locations have inherent adhesive tendencies that would result in excessive forces required to separate the joints if left unchecked. This paper summarizes adhesion assessments for both as-received and adhesion-mitigated seals for the docking system and the heat shield interface location. Three silicone elastomers were examined: Parker Hannifin S0899-50 and S0383-70 compounds, and Esterline ELA-SA-401 compound. For the docking system application various levels of exposure to atomic oxygen (AO) were evaluated. Moderate AO treatments did not lower the adhesive properties of S0899-50 sufficiently. However, AO pretreatments of approximately 10(exp 20) atoms/sq cm did lower the adhesion of S0383-70 and ELA-SA-401 to acceptable levels. For the heat shield-to-back shell interface application, a fabric covering was also considered. Molding Nomex fabric into the heat shield pressure seal appreciably reduced seal adhesion for the heat shield-to-back shell interface application.
deGroh, Henry C., III↗
Gaseous By-Product of Thermal Vacuum Processing of Lunar Highland Simulant
Scientists at Kennedy Space Center are advancing technologies to achieve oxygen extraction on the Lunar surface. One such technology is Molten Regolith Electrolysis (MRE) in which regolith simulant is melted under high temperatures to perform oxygen extraction through electrolysis of the melt pool. A study was conducted to understand the molten formation and proper-ties of Lunar Highlands Simulants (LHS-1) under high vacuum environments ranging between 10-6 Torr. These studies include investigating the regolith melt behavior and by-product gas analysis systems to prepare for pilot plant development and operations. The off-gassing rates and pressure build-up, gaseous compounds, and material compatibility may be a risk to MRE systems. The KSC findings are reported here for inclusion into future mis-sion architecture and operational planning. The four stages of the experiment were vacuum, resistive heating, regolith melt and gas detection. The regolith mass of 70 g was melted in a 40 cm tall x 50 cm diameter vacuum chamber at temperature increase rate 47 ℃ /min and ramp rate of 1 ampere/3 min up to an 18-amp maximum. The test is conducted for about 60 minutes and the constituent gases produced during heating of regolith is monitored with a re-sidual gas analyzer. During the molten formation, primary off-gassing volatiles included water vapor (18 amu), a peak at 44 amu (FeO2 – expected), and atomic oxygen (16 amu), among a series of other compounds that could create compatibility issues such as magnesium, chlorine, and silicon oxide. These results add to the knowledge required for successful oxygen extraction on the moon.
Molten Regolith Electrolysis↗
Creating Functional Oxynitride–Silicon Interfaces and SrNbO 2 N Thin Films for Photoelectrochemical Applications
Photoelectrochemical performance dependence upon absorption length, carrier diffusion length, and surface area of an oxynitride photoabsorber is investigated. How best to fabricate optical-quality thin films of bandgap-tunable oxynitrides is also discussed. We targeted the stoichiometric compound SrNbO 2 N as an optimal wide-bandgap photoabsorber (1.9 eV) for use with silicon (1.1 eV) in a tandem structure photoelectrochemical cell. Preparation of perovskite oxynitrides at high-temperature as isolated powders is often straightforward, but it is difficult to integrate them as thin films in tandem junction devices with low-temperature materials. Here we develop the first method to prepare optical-quality SrNbO 2 N thin-films of tunable thickness and roughness on single-crystal silicon substrate. This achievement required an interfacial layer of ultra-thin TaN to be used as a barrier to reduce the inter-diffusion of silicon and oxygen during oxynitride syn-thesis. We produced a variety of SrNbO 2 N film thicknesses (20-440 nm) on n + -Si(100) surfaces. Roughness factor (0.14-21) scaled with thickness. The intrinsic photoelectrochemical activity of these devices was evaluated using a low-barrier sacrificial electron donor. Photocurrent density and photovoltage revealed a significant (and non-linear) dependence on film thickness and roughness. Furthermore, absorption length, carrier diffusion length, and surface area were each found to play key roles. Balancing these is required for optimally performing devices.
08 HYDROGEN↗
Exploratory study of elevated-temperature tensile properties of alloys based on the intermetallic compound TiNi
The tensile properties and oxygen contamination behavior of TiNi alloyed with aluminum, chromium, and silicon were investigated in the temperature range between 800 and 1000 K (980 and 1340 F). The alloys were significantly stronger than unalloyed TiNi and less susceptible to embrittlement than the Ti-6242 alloy.
Garfinkle, M.↗
Fabrication of sinterable silicon nitride by injection molding
Transformation of structural ceramics from the laboratory to production requires development of near net shape fabrication techniques which minimize finish grinding. One potential technique for producing large quantities of complex-shaped parts at a low cost, and microstructure of sintered silicon nitride fabricated by injection molding is discussed and compared to data generated from isostatically dry-pressed material. Binder selection methodology, compounding of ceramic and binder components, injection molding techniques, and problems in binder removal are discussed. Strength, oxidation resistance, and microstructure of sintered silicon nitride fabricated by injection molding is discussed and compared to data generated from isostatically dry-pressed material.
Quackenbush, C. L.↗
Temperature Dependence of Diffusion and Reaction at a Pd/SiC Contact
Schottky diodes of Palladium/SiC are good candidates for hydrogen and hydrocarbon gas sensors at elevated temperature. The detection sensibility of the diodes has been found heavily temperature dependent. In this work, emphasis has been put on the understanding of changes of physical and chemical properties of the Schottky diodes with variation of temperature. Schottky diodes were made by depositing ultra-thin palladium films onto silicon carbide substrates. The electrical and chemical properties of Pd/SiC Schottky contacts were studied by XPS and AES at different annealing temperatures. No significant change in the Schottky barrier height of the Pd/SiC contact was found in the temperature range of RT-400 C. However, both palladium diffused into SiC and silicon migrated into palladium thin film as well as onto surface were observed at room temperature. The formation of palladium compounds at the Pd/SiC interface was also observed. Both diffusion and reaction at the Pd/SiC interface became significant at 300 C and higher temperature. In addition, silicon oxide was found also at the interface of the Pd/SiC contact at high temperature. In this report, the mechanism of diffusion and reaction at the Pd/SiC interface will be discussed along with experimental approaches.
Shi, D.T.↗