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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 199 records · Page 11
All sourcesNASA NTRSDOE OSTI
NASA NTRS1997

X-Ray Computed Tomography Monitors Damage in Composites

The NASA Lewis Research Center recently codeveloped a state-of-the-art x-ray CT facility (designated SMS SMARTSCAN model 100-112 CITA by Scientific Measurement Systems, Inc., Austin, Texas). This multipurpose, modularized, digital x-ray facility includes an imaging system for digital radiography, CT, and computed laminography. The system consists of a 160-kV microfocus x-ray source, a solid-state charge-coupled device (CCD) area detector, a five-axis object-positioning subassembly, and a Sun SPARCstation-based computer system that controls data acquisition and image processing. The x-ray source provides a beam spot size down to 3 microns. The area detector system consists of a 50- by 50- by 3-mm-thick terbium-doped glass fiber-optic scintillation screen, a right-angle mirror, and a scientific-grade, digital CCD camera with a resolution of 1000 by 1018 pixels and 10-bit digitization at ambient cooling. The digital output is recorded with a high-speed, 16-bit frame grabber that allows data to be binned. The detector can be configured to provide a small field-of-view, approximately 45 by 45 mm in cross section, or a larger field-of-view, approximately 60 by 60 mm in cross section. Whenever the highest spatial resolution is desired, the small field-of-view is used, and for larger samples with some reduction in spatial resolution, the larger field-of-view is used.

Baaklini, George Y.↗
NASA NTRS1996

CMOS Active Pixel Sensor Star Tracker with Regional Electronic Shutter

The guidance system in a spacecraft determines spacecraft attitude by matching an observed star field to a star catalog....An APS(active pixel sensor)-based system can reduce mass and power consumption and radiation effects compared to a CCD(charge-coupled device)-based system...This paper reports an APS (active pixel sensor) with locally variable times, achieved through individual pixel reset (IPR).

active pixel sensor CCD↗
NASA NTRS1995

CMOS Image Sensors: Electronic Camera On A Chip

Recent advancements in CMOS image sensor technology are reviewed, including both passive pixel sensors and active pixel sensors. On- chip analog to digital converters and on-chip timing and control circuits permit realization of an electronic camera-on-a-chip. Highly miniaturized imaging systems based on CMOS image sensor technology are emerging as a competitor to charge-coupled devices for low cost uses.

Space Microelectronics Image Sensors APS Digital I↗
NASA NTRS1994

Development of CMOS Active Pixel Image Sensors for Low Cost Commercial Applications

JPL, under sponsorship from the NASA Office of Advanced Concepts and Technology, has been developing a second-generation solid-state image sensor technology. Charge-coupled devices (CCD) are a well-established first generation image sensor technology. For both commercial and NASA applications, CCDs have numerous shortcomings. In response, the active pixel sensor (APS) technology has been under research. The major advantages of APS technology are the ability to integrate on-chip timing, control, signal-processing and analog-to-digital converter functions, reduced sensitivity to radiation effects, low power operation, and random access readout.

solid-state image sensors active pixel sensor APS ↗
NASA NTRS1993

Active Pixel Sensors: Are CCD's Dinosaurs?

Charge-coupled devices (CCD's) are presently the technology of choice for most imaging applications. In the 23 years since their invention in 1970, they have evolved to a sophisticated level of performance. However, as with all technologies, we can be certain that they will be supplanted someday. In this paper, the Active Pixel Sensor (APS) technology is explored as a possible successor to the CCD. An active pixel is defined as a detector array technology that has at least one active transistor within the pixel unit cell. The APS eliminates the need for nearly perfect charge transfer -- the Achilles' heel of CCDs. This perfect charge transfer makes CCD's radiation 'soft,' difficult to use under low light conditions, difficult to manufacture in large array sizes, difficult to integrate with on-chip electronics, difficult to use at low temperatures, difficult to use at high frame rates, and difficult to manufacture in non-silicon materials that extend wavelength response.

Fossum, Eric R.↗
NASA NTRS1993

CCD Star Tracker Experience -- Key Results from Astro 1 flight

Charge-coupled devices (CCDs) have now flown successfully in a number of space scientific and engineering instruments, and have rapidly become the preferred technology for most imaging applications. One of their earliest planned applications in space was in the precision (subarcsecond) star tracker for the Astro series of UV missions.

Astro↗
NASA NTRS1993

Application of the Active Pixel Sensor Concept to Guidance and Navigation

Charge-coupled devices (CCDs) have been used extensively in the past in star trackers and fine guidance systems. A new technology, the active pixel sensor, is a possible successor to CCDs. This technology potentially features the same sensitivity and performance of the CCD with additional improvements. These improvements include random access capability, easy window-of-interest readout, non-destructive readout for signal-to-noise improvement, high radiation tolerance, simplified clocking voltages, and easy integration with other on-chip signal processing circuitry. The state-of-the-art of this emerging technology and its potential application to guidance and navigation systems is discussed.

Eisenman, Allan R.↗
NASA NTRS1976

Solid state television camera

The design, fabrication, and tests of a solid state television camera using a new charge-coupled imaging device are reported. An RCA charge-coupled device arranged in a 512 by 320 format and directly compatible with EIA format standards was the sensor selected. This is a three-phase, sealed surface-channel array that has 163,840 sensor elements, which employs a vertical frame transfer system for image readout. Included are test results of the complete camera system, circuit description and changes to such circuits as a result of integration and test, maintenance and operation section, recommendations to improve the camera system, and a complete set of electrical and mechanical drawing sketches.

Source record↗
NASA NTRS1976

Development of InSb charge-coupled infrared imaging devices: Linear imager

The following results were accomplished in the development of charge coupled infrared imaging devices: (1) a four-phase overlapping gate with 9 transfers (2-bits) and 1.0-mil gate lengths was successfully operated, (2) the measured transfer efficiency of 0.975 for this device is in excellent agreement with predictions for the reduced gate length device, (3) mask revisions of the channel stop metal on the 8582 mask have been carried out with the result being a large increase in the dc yield of the tested devices, (4) partial optical sensitivity to chopped blackbody radiation was observed for an 8582 9-bit imager, (5) analytical consideration of the modulation transfer function degradation caused by transfer inefficiency in the CCD registers was presented, and (6) for larger array lengths or for the insertion of isolated bits between sensors, improvements in InSb fabrication technology with corresponding decrease in the interface state density are required.

Phillips, J. D.↗
NASA NTRS1977

Further development of an indium antimonide (InSb)Charge-Coupled Infrared Imaging Device (CCIRID), 20-element linear imager

Problems encountered in the development of an indium antimonide charge coupled device for infrared imaging and real time signal processing on the focal plane are summarized. A new generation chip is described which contains, 2, 4, and 20-element imagers, a 4-element TDI array, a monolithic gated charge integrator, and test devices. A system study of a future LANDSAT sensor system configured around an InSb TDi array is considered.

Source record↗
NASA NTRS1977

Charge-coupled differential amplifier

Device solves problem of differential voltage gain in sampled-data metal-oxide semiconductor, producing gain at any frequency compatible with CCD operation, with low noise, low power, good linearity, and high stability.

Hewes, C. R.↗
NASA NTRS1981

Development of a Shuttle Infrared Telescope Facility /SIRTF/ fine guidance sensor

Fine guidance technology development for the Shuttle Infrared Telescope Facility (SIRTF) centers upon the use of a single multiple-star-tracking sensor to provide the position information necessary to produce three-axis attitude control signals for precision payload pointing. The effort described in this paper is concerned with the development of a fine guidance sensor that employs a high-density charge-coupled imaging device for producing position information signals by using star fields. Multiple star position information produces three-axis position error signals that are used to update inertial reference gyros. The sensor employs advanced position interpolation algorithms to enhance field-of-view resolution and to correct for optical aberrations inherent in spatially chopped star images resulting from the telescope's movable secondary mirror. Operation of the sensor is under the control of a high-performance microcomputer that provides both autonomy and flexibility in a guidance application.

Salomon, P. M.↗
NASA NTRS1994

Assessment of Image Sensor Technology for Future NASA Missions

An assessment of solid-state UV/visible image sensor technology for future NASA missions is presented. The paper will attempt to summarize the state of the art in image sensor technology in the United States, Canada, Japan, and Europe. The state of the art and future trends will be compared to a forecast of future NASA needs in scientific image sensors for planetary exploration, earth science, astrophysics, and spacecraft systems such as star trackers and optical communications.

solid-state↗
NASA NTRS1996

Cassini Stellar Reference Unit: Performance Test Approach and Results

The Cassini Stellar Reference Unit (SRU) is the prime attitude determination sensor on the Cassini spacecraft...To ensure that the SRU will operate within specification for the entire mission, an extensive test program has been undertaken to characterize the SRU performance prior to launch and to quantify any expected performance degradation. Results from several eomplimentary test programs are presented and compared with pre-test performance predictions.

star↗
NASA NTRS1988

Improved Charge-Coupled Imager For X Rays

Device proposed to improve imaging of x rays. Features thin layer of oxide in virtual phase to increase quantum efficiency and depletion layer nearly as thick as epitaxial silicon layer to increase resolution. Applications include imaging spectrometers for x-ray astronomy, investigations of plasmas, and x-ray crystallography.

Wadsworth, Mark↗
NASA NTRS1978

Indium antimonide infrared CCD linear imaging arrays with on-chip preprocessing

A description is presented of the fabrication of a new InSb CCD chip based on an improved process which eliminates the limitations inherent with the earlier techniques. This process includes planar junction formation and an aluminum and SiO2 material system which is amenable to state-of-the-art chemical and plasma delineation techniques. Further, the new chip integrates for the first time in monolithic format InSb IR detectors with an InSb CCD. The reported experiments represent the first operation of an InSb infrared CCD array. In addition to fuller characterization of the 20-element charge-coupled infrared imaging device, several factors which influence device performance are currently being addressed. These include surface state density, the CCD output circuit, and storage time (dark current).

Thom, R. D.↗
NASA NTRS1975

Cooled slow-scan performance of a 512 by 320 element charge-coupled imager

A 512 x 320 element charge coupled imager has been fabricated and tested under cooled slow scan conditions to evaluate the device's performance under a variety of long integration and slow scan readout conditions. Operation in a low blooming mode of operation enables the sensor to be exposed with portions of the image heavily overexposed, without those areas spreading into adjacent picture areas. Device design, layout, and operating mode are described, and presents experimental results, including displayed images taken under cooled slow scan operation, are reported.

Rodgers, R. L., III↗
NASA NTRS1975

A 190 by 244 charge-coupled area image sensor with interline transfer organization

A 190 x 244 element charge coupled area image sensor has been designed, fabricated and tested. This sensor employs an interline transfer organization and buried n-channel technology. It features a novel on-chip charge integrator and a distributed floating gate amplifier for high and low light level applications. The X-Y element count has been chosen to establish the capability of producing an NTSC compatible video signal. The array size is also compatible with the Super 8 lens format. The first few sample devices have been successfully operated at full video bandwidth for both high and low light levels with the charge amplifier system.

Walsh, L. R.↗