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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 199 records · Page 11
All sourcesNASA NTRSDOE OSTI
NASA NTRS1976

Time-temperature-stress dependence of boron fiber deformation

The time-dependent deformation of boron fibers over the temperature range from -190 to 800 C is studied by flexural stress relaxation and flexural internal friction techniques on 203-micron diam specimen fibers commercially produced by chemical vapor deposition (CVD) on a 13-micron tungsten substrate. It is shown that up to at least 800 C all nonelastic behavior observed during axial deformation of CVD boron fibers can be explained solely by anelastic mechanisms and that although creep strains are small, boron fiber anelasticity can produce significant mechanical effects which would otherwise be neglected under the elastic approximation. Relations are obtained to demonstrate the considerable effects of anelasticity on such fiber/composite properties as modulus, creep, creep recovery, stress relaxation, and damping capacity. For an elastic-core/anelastic-sheath model, boron fibers on tungsten substrates are shown to have predictable fracture stresses for time-temperature conditions ranging from impact to long-time stress rupture. Possible techniques for altering these stresses are discussed.

Dicarlo, J. A.↗
NASA NTRS1976

Chemical vapor deposition growth

A laboratory type CVD reactor system with a vertical deposition chamber and sample pedestal heated by an external RF coil has been extensively modified by installation of mass flow controllers, automatic process sequence timers, and special bellows-sealed air-operated valves for overall improved performance. Various film characterization procedures, including classical metallography, SEM analyses, X ray diffraction analyses, surface profilometry, and electrical measurements (resistivity, carrier concentration, mobility, spreading resistance profiles, and minority-carrier lifetime by the C-V-t method) area used to correlate Si sheet properties with CVD parameters and substrate properties. Evaluation procedures and measurements are given. Experimental solar cell structures were made both in epitaxial Si sheet (on sapphire substrates) and in polycrystalline material on alumina substrates, the former to provide an indication of what might be an upper limit on performance of the latter. Preliminary results are given, as obtained in cell structures not specially designed to allow for the unique properties of the sheet material, and fabricated in material known to be far from optimum for photovoltaic performance. Low power conversion efficiencies have been obtained in the epitaxial as well as the polycrystalline Si sheet.

Ruth, R. P.↗
NASA NTRS1977

Chemical Vapor Deposition of Silicon from Silane Pyrolysis

The four basic elements in the chemical vapor deposition (CVD) of silicon from silane are analytically treated from a kinetic standpoint. These elements are mass transport of silane, pyrolysis of silane, nucleation of silicon, and silicon crystal growth. Rate expressions that describe the various steps involved in the chemical vapor deposition of silicon were derived from elementary principles. Applications of the rate expressions for modeling and simulation of the silicon CVD are discussed.

Praturi, A. K.↗
NASA NTRS1979

Chemical-vapor deposition of silicon from silane

Report lists tables of standard free-energy change, equilibrium constant, and heat of reaction for chemical vapor deposition (CVD) of silicon from silane over temperature range of 100 to 1000 K. Data indicates silicon CVD may be a commercially economical process for production of silicon for solar arrays and other applications.

Hsu, G. C.↗
NASA NTRS1977

Niobium-germanium superconducting tapes for high-field magnet applications

A process of fabricating superconducting Nb3Ge tapes by chemical vapor deposition (CVD) has been developed and tapes up to 10 meters long fabricated. The typical properties achieved were: critical temperature T sub c = 20 K, upper critical field H sub c2 = 29 tesla at 4.2 K, and J sub c = 3 to 4 x 10 to the 8th power A m(-2) at 4.2 K, 18 tesla. The relative depression of T sub c and H sub c2 compared with the best thin film samples sputtered on sapphire was due to the presence of Nb5Ge3 second-phase particles used as flux pinning centers and to strains induced by thermal mixmatch with Hastelloy B tape substrates. A peculiar field dependence of flux pinning force that was observed in both CVD and sputtered Nb3Ge indicated a premature pin-breaking mechanism or a phase inhomogeneity. Directions of further optimization work were defined.

Braginski, A. I.↗
NASA NTRS1979

High-efficiency thin-film GaAs solar cells

GaAs chemical vapor deposition (CVD) growth on single-crystal GaAs substrates was investigated over a temperature range of 600 to 750 C, As/GA mole-ratio range of 3 to 11, and gas molefraction range 5 x 10 to the minus 9th power to 7x 10 to the minus 7th power for H2S doping. GasAs CVD growth on recrystallized Ge films was investigated for a temperature range of 550 to 700 C, an As/GA mole ratio of 5, and for various H2S mole fraction. The highest efficiency cell observed on these films with 2 mm dots was 4.8% (8% when AR-coated). Improvements in fill factor and opencircuit voltage by about 40% each are required in order to obtain efficiencies of 15% or greater.

Stirn, R. J.↗
NASA NTRS1978

Effect of temperature on optical fiber transmission

Results are presented concerning the effects of temperature on the transmission properties of various optical fibers including a silicone plastic clad, an acrylic plastic clad, and CVD step-index fibers both with and without polyurethane jackets. Results are presented for the normalized transmitted power vs temperature, the index of refraction vs temperature, and induced attenuation coefficients vs temperature. The data show that the intrinsic transmission of a CVD fiber is independent of temperature over the -110 to +150 C range. Plastic clad fused silica fibers are subject to transmission losses at lower temperatures due to changes in the optical index of the cladding polymer. Acrylic-clad and plastic-clad silica fibers also show transmission losses at lower temperatures, but to lesser extents.

Yeung, W. F.↗
NASA NTRS1978

Progress towards high efficiency polycrystalline thin-film GaAs AMOS solar cells

Results of Ge film recrystallization using focused laser beams and GaAs film growth on such layers in the making of high efficiency thin-film AMOS solar cells are discussed. Since a conversion efficiency of 14% was obtained for an AMOS cell fabricated on sliced bulk polycrystalline GaAs, high efficiency cells are being developed by chemically vapor-depositing GaAs films on previously recrystallized evaporated Ge films to minimize the grain boundary (GB) effects. Schottky barrier solar cells made on sliced polycrystalline GaAs wafers were studied to investigate the effects of grain boundaries on cell properties and the potential efficiency of GaAs thin-film cells. Ge film recrystallization and the chemical vapor deposition (CVD) of the 2 to 3 micron thick GaAs films are described. AMOS solar cells with 100 Angstrom thick Ag metallization were made on CVD GaAs/recrystallized Ge/W substrates with an energy conversion efficiency of 8%.

Yeh, Y. C. M.↗
NASA NTRS1980

Gaalas/Gaas Solar Cell Process Study

Available information on liquid phase, vapor phase (including chemical vapor deposition) and molecular beam epitaxy growth procedures that could be used to fabricate single crystal, heteroface, (AlGa) As/GaAs solar cells, for space applications is summarized. A comparison of the basic cost elements of the epitaxy growth processes shows that the current infinite melt LPE process has the lower cost per cell for an annual production rate of 10,000 cells. The metal organic chemical vapor deposition (MO-CVD) process has the potential for low cost production of solar cells but there is currently a significant uncertainty in process yield, i.e., the fraction of active material in the input gas stream that ends up in the cell. Additional work is needed to optimize and document the process parameters for the MO-CVD process.

Almgren, D. W.↗
NASA NTRS1983

Chemical Vapor Deposition of Germanium of Silicon

Experimental work shows chemical vapor deposition (CVD) by pyrolysis of gaseous germanium tetrahydride provides epitaxial layers of germanium on silicon. Relatively low temperature of CVD process (500 degrees to 900 degrees C) reduces stresses that occur at layer/substrate interface during growth and cooling.

Aharoni, H.↗
NASA NTRS1982

Progress toward thin-film GaAs solar cells using a single-crystal Si substrate with a Ge interlayer

Development of a technology for fabricating light-weight, high-efficiency, radiation-resistant solar cells for space applications is reported. The approaches currently adopted are to fabricate shallow homojunction n(+)/p as well as p/n AlGaAs-heteroface GaAs solar cells by organometallic chemical vapor deposition (OM-CVD) on single-crystal Si substrates using in each case, a thin Ge epi-interlayer first grown by CVD. This approach maintains the advantages of the low specific gravity of Si as well as the high efficiency and radiation-resistant properties of the GaAs solar cell which can lead to greatly improved specific power for a solar array. The growth of single-crystal GaAs epilayers on Ge epi-interlayers on Si substrates is investigated. Related solar cell fabrication is reviewed.

Yeh, Y. C. M.↗
NASA NTRS1985

Efficient Process for Making Polycrystalline Silicon

Solar cells made with lower capital and operating costs. Process based on chemical-vapor deposition (CVD) of dichlorosilane produces high-grade polycrystalline silicon for solar cells. Process has potential as cost-effective replacement for CVD of trichlorosilane.

Mccormick, J. R.↗
NASA NTRS1986

Fluidized-bed reactor modeling for production of silicon by silane pyrolysis

An ideal backmixed reactor model (CSTR) and a fluidized bed bubbling reactor model (FBBR) were developed for silane pyrolysis. Silane decomposition is assumed to occur via two pathways: homogeneous decomposition and heterogeneous chemical vapor deposition (CVD). Both models account for homogeneous and heterogeneous silane decomposition, homogeneous nucleation, coagulation and growth by diffusion of fines, scavenging of fines by large particles, elutriation of fines and CVD growth of large seed particles. At present the models do not account for attrition. The preliminary comparison of the model predictions with experimental results shows reasonable agreement. The CSTR model with no adjustable parameter yields a lower bound on fines formed and upper estimate on production rates. The FBBR model overpredicts the formation of fines but could be matched to experimental data by adjusting the unkown jet emulsion exchange efficients. The models clearly indicate that in order to suppress the formation of fines (smoke) good gas-solid contacting in the grid region must be achieved and the formation of the bubbles suppressed.

Dudukovic, M. P.↗
NASA NTRS1986

Reflectivity of silicon carbide in the extreme ultraviolet

Reflectivity and scattering measurements on samples of SiC manufactured by a variety of processes. Measurements were made from near-normal to grazing incidence at wavelengths in the range of 114 to 1216 A. CVD SiC displays the highest reflectivity at EUV wavelengths and normal incidence. At grazing incidence, Si-rich samples show reflectivity cutoff identical to polycrystalline Si. From the limited data available for single-crystal material, it is concluded that CVD material has comparable performance.

Mrowka, Stanley↗
NASA NTRS1987

Modeling free convective gravitational effects in chemical vapor deposition

In this paper, a combined fluid-mechanics, mass-transport, and chemistry model describing CVD in an open-tube atmospheric-pressure flow reactor is developed. The model allows gas-phase reactions to proceed to equilibrium and accounts for finite reaction rates at the surface of the deposition substrate. This model is a useful intermediate step toward a model employing fully rate-limited chemistry. The model is used to predict the effects of free convection on flow patterns, temperature and species-concentration profiles, and local deposition rates for silicon deposited by silane pyrolysis. These results are discussed in terms of implications for CVD of silicon and other compounds, microgravity studies, and techniques for testing and validating the model.

Stinespring, C. D.↗
NASA NTRS1988

Chemical vapor deposited silica coatings for solar mirror protection

A variety of techniques is available to apply protective coatings to oxidation susceptible spacecraft components, and each has associated advantages and disadvantages. Film applications by means of chemical vapor deposition (CVD) has the advantage of being able to be applied conformally to objects of irregular shape. For this reason, a study was made of the oxygen plasma durability of thin film (less than 5000 A) silicon dioxide coatings applied by CVD. In these experiments, such coatings were applied to silver mirrors, which are strongly subject to oxidation, and which are proposed for use on the space station solar dynamic power system. Results indicate that such coatings can provide adequate protection without affecting the reflectance of the mirror. Scanning electron micrographs indicated that oxidation of the silver layer did occur at stress crack locations, but this did not affect the measured solar reflectances. Oxidation of the silver did not proceed beyond the immediate location of the crack. Such stress cracks did not occur in thinner silica flims, and hence such films would be desirable for this application.

Gulino, Daniel A.↗
NASA NTRS1988

A test for interfacial effects and stress transfer in ceramic matrix composites

A test specimen was devised for measuring stress transfer between a high modulus fiber and a ceramic matrix. Single filaments of SiC were embedded in chemically vapor deposited SiC on a thin plate of molybdenum. The CVD overcoating which encapsulated the fiber was continuous with a coating of SiC on the molybdenum. When placed in a microtensile test device and loaded in the fiber direction, the fiber fracture characteristics provide information on the fiber/matrix adhesion and stress transfer. Problems were encountered due to the formation of a weak boundary between the SiC and the molybdenum which obviated any meaningful tensile tests. Also, the high CVD temperature used in fabricating these specimens restrict the fiber, matrix (and substrate) to materials having similar thermal coefficients of expansion in order to minimize thermal stresses.

Source record↗
NASA NTRS1988

Chemical vapor deposited silica coatings for solar mirror protection

A variety of techniques is available to apply protective coatings to oxidation susceptible spacecraft components, and each has associated advantages and disadvantages. Film applications by means of chemical vapor deposition (CVD) has the advantage of being able to be applied conformally to objects of irregular shape. For this reason, a study was made of the oxygen plasma durability of thin film (less than 5000 A) silicon dioxide coatings applied by CVD. In these experiments, such coatings were applied to silver mirrors, which are strongly subject to oxidation, and which are proposed for use on the space station solar dynamic power system. Results indicate that such coatings can provide adequate protection without affecting the reflectance of the mirror. Scanning electron micrographs indicated that oxidation of the silver layer did occur at stress crack locations, but this did not affect the measured solar reflectances. Oxidation of the silver did not proceed beyond the immediate location of the crack. Such stress cracks did not occur in thinner silica films, and hence such films would be desirable for this application.

Gulino, Daniel A.↗