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At least 199 records · Page 11

Modeling defect trends for iterative development

The Employment of Defects (EoD) approach to measuring and analyzing defects seeks to identify and capture trends and phenomena that are critical to managing software quality in the iterative software development lifecycle at JPL.

modeling defects metrics↗

Defect measurement and analysis of JPL ground software: a case study

Ground software systems at JPL must meet high assurance standards while remaining on schedule due to relatively immovable launch dates for spacecraft that will be controlled by such systems. Toward this end, the Software Quality Improvement (SQI) project's Measurement and Benchmarking (M&B) team is collecting and analyzing defect data of JPL ground system software projects to build software defect prediction models. The aim of these models is to improve predictability with regard to software quality activities. Predictive models will quantitatively define typical trends for JPL ground systems as well as Critical Discriminators (CDs) to provide explanations for atypical deviations from the norm at JPL. CDs are software characteristics that can be estimated or foreseen early in a software project's planning. Thus, these CDs will assist in planning for the predicted degree to which software quality activities for a project are likely to deviation from the normal JPL ground system based on pasted experience across the lab.

defects↗

Effects of Defects Analysis and Sizing Framework for Efficient Design of Composite Structures

Design of large composite structures requires striking a balance between permitted flaw size,strength margins, weight, and production rate. Stringent requirements manufacturing flaws can result in a lightweight structure because the strength properties are assumed to be closer to pristine. However, these stringent requirements can lead to production delays due to increased inspection and rework needed during the layup and rejection of parts after cure. Conversely, permitting larger flaws can reduce production delays, but will likely result in a heavier structure due to increased conservatism needed to maintain acceptable structural margins. The tradeoff between these criteria can vary between different structures and material systems, so the balance between manufacturing and design requirements is always a moving target. Assessment of this tradeoff requires having the ability to quickly evaluate the impact of flaw size on strength margin across an entire structure for a large number of load cases. The approach taken in this work is to implement an effects of defects analysis and sizing framework within HyperX. HyperX performs optimization of composite structures; this capability has been enhanced to include structural flaw data in the margin of safety calculations performed during optimization. Both the flaw import process and analysis of flaws have been generalized such that any flaw type from any source can be considered. The resulting tool enables rapid assessment of the impact of defects both at a vehicle and part level.

Effects of defects↗

Effects of Defects Analysis and Sizing Framework for Efficient Design of Composite Structures

Design of large composite structures requires striking a balance between permitted flaw size,strength margins, weight, and production rate. Stringent requirements manufacturing flaws can result in a lightweight structure because the strength properties are assumed to be closer to pristine. However, these stringent requirements can lead to production delays due to increased inspection and rework needed during the layup and rejection of parts after cure. Conversely, permitting larger flaws can reduce production delays, but will likely result in a heavier structure due to increased conservatism needed to maintain acceptable structural margins. The tradeoff between these criteria can vary between different structures and material systems, so the balance between manufacturing and design requirements is always a moving target. Assessment of this tradeoff requires having the ability to quickly evaluate the impact of flaw size on strength margin across an entire structure for a large number of load cases. The approach taken in this work is to implement an effects of defects analysis and sizing framework within HyperX. HyperX performs optimization of composite structures; this capability has been enhanced to include structural flaw data in the margin of safety calculations performed during optimization. Both the flaw import process and analysis of flaws have been generalized such that any flaw type from any source can be considered. The resulting tool enables rapid assessment of the impact of defects both at a vehicle and part level.

Effects of defects↗

New detection method for rolling element and bearing defects

Instrument for detecting defects in rolling elements of bearings is described. Detection depends on rate at which rolling elements impact defect and establishes envelope amplitude of ball resonant frequency. Block diagram of instrument is provided and results obtained in conducting tests are reported.

Burchill, R. F.↗

Precise measurement of charged defects in III-V compounds (2)

The main objective of this research is to obtain a calibration of a low concentration of charged defects in some III-V semiconducting compounds. The experimental technique being used is nuclear magnetic resonance (NMR), and the objective is to be attained through a thorough examination of the properties of the NMR lines of the nuclei in the III-V compounds. The properties of the NMR lines, and how they are influenced by the presence of charged defects are studied theoretically and experimentally.

Soest, J. F.↗

Phonons in quantum solids with defects

A formalism was developed for temperature-dependent, self-consistent phonons in quantum solids with defects. Lattice vacancies and interstitials in solid helium and metallic hydrogen, as well as electronic excitations in solid helium, were treated as defects that modify properties of these systems. The information to be gained from the modified phonon spectrum is discussed.

Jacobi, N.↗

Orientation dependence of defect structure in EFG silicon ribbons

Sustained growth of long lengths of silicon ribbons by the edge-defined film-fed growth (EFG) technique is shown to result in the attainment of an 'equilibrium' defect structure and orientation by the crystals. The structure consists of parallel defect boundaries parallel to the edges of the ribbon with a specific ribbon orientation. The influence of seed orientation on the attainment of this structure has been examined.

Garone, L. C.↗

Window defect planar mapping technique

A method of planar mapping defects in a window having an edge surface and a planar surface. The method is comprised of steps for mounting the window on a support surface. Then a light sensitive paper is placed adjacent to the window surface. A light source is positioned adjacent to the window edge. The window is then illuminated with the source of light for a predetermined interval of time. Defects on the surface of the glass, as well as in the interior of the glass are detected by analyzing the developed light sensitive paper. The light source must be in the form of optical fibers or a light tube whose light transmitting ends are placed near the edge surface of the window.

Minton, F. R.↗

Sodium ions at defect sites at SiO2/Si interfaces as determined by X-ray photoelectron spectroscopy

X-ray photoelectron spectroscopy (XPS) is described in its application as a probe for studying defects such as sodium in SiO2 films. A general description is given of key experimental methods in XPS. Techniques are described for applying and monitoring a fixed bias at the surface of the oxide during the XPS measurement. These methods are shown to be capable of detecting extremely small Na and Cu concentrations in undoped samples (less than 10 to the 11th power per cu cm). In deliberately Na-doped samples, five spectral peaks are distinctly observed and related to different defect states at the vacuum/SiO2 and SiO2/Si interfaces. By applying a bias-temperature stress during the XPS measurements, these peaks change in relative intensity and can be related to the motion of the Na(+) ions between different states occurring at the two interfaces. An attempt is made to correlate the observations with previously reported models.

Grunthaner, F. J.↗

Germination-defective mutant of Neurospora crassa that responds to siderophores

A conditionally germination-defective mutant of Neurospora crassa has been found to be partially curable by ferricrocin and other siderophores. The mutant conidia rapidly lose their membrane-bound siderophores when suspended in buffer or growth media. Germination is consequently delayed unless large numbers of conidia are present (positive population effect). This indicates that the mutant has a membrane defect involving the siderophore attachment site.

Charlang, G.↗

Structure and electrical activity of planar defects in EFG ribbons

Optical, electron beam induced current (EBIC), and transmission electron microscopy were used to study the structure and electrical activity of planar defects in EFG silicon. What appears to be twin boundaries by both optical microscopy plus etching, and by EBIC are in reality systems of microtwins, some of which are only a few atomic lattice planes thick. The electrical activity of planar defects appears to be correlated with emission of dislocations especially at termination points. Impurity effects may also play a role. Twin boundaries per se appear not to be electrically active.

Ast, D. G.↗

Measurements of pulse-height defect in Au-Si detectors for H, He, C, N, O, Ne, Ar, Kr from about 2 to 400 keV/nucleon

We report measurements of pulse-height defects in Si surface-barrier detectors for a variety of ions and energies. We find: (1) for ions up to Ne our measurements agree remarkably well with calculations based on energy loss and nuclear defect theory, (2) for heavier ions we find systematic deviations, (3) there is no evidence of a dead layer at the Si-Au interface, and (4) our measurements are consistently reproducible for detectors fabricated in our laboratory.

Ipavich, F. M.↗

Response of defects to illumination in silicon solar cells

The enhancement of diffusion length with intensity was examined using spectral response measurements in solar cells based on Silso silicon and EFG silicon ribbon. Local diffusion length variations at defect sites were investigated as a function of illumination level using a scanning electron microscope operated in the electron beam induced current mode. An increase of diffusion length was observed at defect sites as the intensity level was increased. The diffusion length improvements are explained on the basis of saturation of minority carrier traps in these materials. The trap distribution in Silso silicon is shown to be peaked near (Ec - 0.7)eV. EFG silicon ribbon shows a broad, Gaussian distribution of traps located near (Ec - 0.5)eV.

Hari Rao, C. V.↗

Composite components under impact load and effects of defects on the loading capacity

Investigations were carried out on a horizontal tail assembly made of carbon fiber reinforced plastic for the Alpha Jet. The possibility of obtaining a leading edge nose design lighter but not more expensive than a metal version was studied. An important consideration was sufficient resistance of the leading edge against impact of stones and hailstones combined with high degree of stiffness. The improvement of energy reception characteristics of the materials through suitable laminate design was considered. Since certain defects occur in structural components, the effects of such defects on the characteristics of the parts were also studied.

Aoki, R.↗