Search NASA⌕ Search

SEARCH · Search NASA

Results for “ELECTRONIC SWITCH”

Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

Quote a phrase for an exact phrase match. Source license links do not imply unrestricted reuse.

At least 199 records · Page 11
All sourcesNASA NTRSDOE OSTI
NASA NTRS2008

Fast Electromechanical Switches Based on Carbon Nanotubes

Electrostatically actuated nanoelectromechanical switches based on carbon nanotubes have been fabricated and tested in a continuing effort to develop high-speed switches for a variety of stationary and portable electronic equipment. As explained below, these devices offer advantages over electrostatically actuated microelectromechanical switches, which, heretofore, have represented the state of the art of rapid, highly miniaturized electromechanical switches. Potential applications for these devices include computer memories, cellular telephones, communication networks, scientific instrumentation, and general radiation-hard electronic equipment. A representative device of the present type includes a single-wall carbon nanotube suspended over a trench about 130 nm wide and 20 nm deep in an electrically insulating material. The ends of the carbon nanotube are connected to metal electrodes, denoted the source and drain electrodes. At bottom of the trench is another metal electrode, denoted the pull electrode (see figure). In the off or open switch state, no voltage is applied, and the nanotube remains out of contact with the pull electrode. When a sufficiently large electric potential (switching potential) is applied between the pull electrode and either or both of the source and drain electrodes, the resulting electrostatic attraction bends and stretches the nanotube into contact with the pull electrode, thereby putting the switch into the "on" or "closed" state, in which substantial current (typically as much as hundreds of nanoamperes) is conducted. Devices of this type for use in initial experiments were fabricated on a thermally oxidized Si wafer, onto which Nb was sputter-deposited for use as the pull-electrode layer. Nb was chosen because its refractory nature would enable it to withstand the chemical and thermal conditions to be subsequently imposed for growing carbon nanotubes. A 200- nm-thick layer of SiO2 was formed on top of the Nb layer by plasma-enhanced chemical vapor deposition. In the device regions, the SiO2 layer was patterned to thin it to the 20-nm trench depth. The trenches were then patterned by electron- beam lithography and formed by reactive- ion etching of the pattern through the 20-nm-thick SiO2 to the Nb layer.

Kaul, Anupama↗
NASA NTRS2017

Evaluation of Fast Switching Diode 1N4448 Over a Wide Temperature Range

Electronic parts used in the design of power systems geared for space applications are often exposed to extreme temperatures and thermal cycling. Limited data exist on the performance and reliability of commercial-off-the-shelf (COTS) electronic parts at temperatures beyond the manufacturers specified operating temperature range. This report summarizes preliminary results obtained on the evaluation of automotive-grade, fast switching diodes over a wide temperature range and thermal cycling. The investigations were carried out to establish a baseline on functionality of these diodes and to determine suitability for use outside their recommended temperature limits.

Thermal Cycling↗
DOE OSTI2026

Bistable Optical Semiconductor Switching Based on C-Doped GaN

Highly resistive gallium nitride (GaN) is an essential material for power optoelectronic applications. While carbon doping is widely used to achieve semi-insulating properties in GaN, the persistent photoconductivity (PPC) arising from deep-level defect traps remains a major obstacle for high-speed power switching. This study demonstrates a novel approach: leveraging the ultrahigh photoresponsivity of GaN:C (up to 2.1 A ⋅ cm/W ⋅ kV, surpassing alternatives such as GaN:Fe) and employing defect-selective optical control to effectively quench the PPC. By synchronizing a short infrared (1064 nm) quenching pulse with UV (385 nm) excitation in an epitaxially grown GaN:C layer on a heavily doped n-type GaN substrate, we achieve a dramatic reduction in photocurrent fall time by approximately 293× (from 470 to 1.6 μ s), increasing modulation bandwidth from 745 Hz to nearly 218 kHz. Here, this advancement not only establishes a new pathway for controlling PPC in GaN:C but also enables the practical integration of GaN:C in fast power switching devices. Enhanced modulation bandwidth, along with GaN:C excellent photoresponsivity, makes it a promising candidate for optically controlled high-voltage, high-power electronic systems, such as photoconductive semiconductor switches (PCSSs) used in pulsed-power drivers, high-power microwave (HPM) sources, and high-voltage gate drivers for wide bandgap (WBG) power electronics.

Carbon-dopped Gallium nitride (GaN:C)↗
NASA NTRS2014

Radiometric Calibration Techniques for Signal-of-Opportunity Reflectometers

Bi-static reflection measurements utilizing global navigation satellite service (GNSS) or other signals of opportunity (SoOp) can be used to sense ocean and terrestrial surface properties. End-to-end calibration of GNSS-R has been performed using well-characterized reflection surface (e.g., water), direct path antenna, and receiver gain characterization. We propose an augmented approach using on-board receiver electronics for radiometric calibration of SoOp reflectometers utilizing direct and reflected signal receiving antennas. The method calibrates receiver and correlator gains and offsets utilizing a reference switch and common noise source. On-board electronic calibration sources, such as reference switches, noise diodes and loop-back circuits, have shown great utility in stabilizing total power and correlation microwave radiometer and scatterometer receiver electronics in L-band spaceborne instruments. Application to SoOp instruments is likely to bring several benefits. For example, application to provide short and long time scale calibration stability of the direct path channel, especially in low signal-to-noise ratio configurations, is directly analogous to the microwave radiometer problem. The direct path channel is analogous to the loopback path in a scatterometer to provide a reference of the transmitted power, although the receiver is independent from the reflected path channel. Thus, a common noise source can be used to measure the gain ratio of the two paths. Using these techniques long-term (days to weeks) calibration stability of spaceborne L-band scatterometer and radiometer has been achieved better than 0.1. Similar long-term stability would likely be needed for a spaceborne reflectometer mission to measure terrestrial properties such as soil moisture.

calibrating↗
NASA NTRS2006

Power Actuation and Switching Module Test Results

The X2000 Power System Electronics (PSE) is a Jet Propulsion Laboratory (JPL) task to develop a new generation of power system building blocks for use on future deep-space missions. The effort includes the development of electronic components and modules that can be used as building blocks in the design of generic spacecraft power systems. All X2000 avionics components and modules are designed for use in centralized or distributed spacecraft architectures. The Power Actuation and Switching Module (PASM) has been developed under the X2000 program. This component enables a modular and scalable design approach for power switching applications, which can result in a wide variety of power switching architectures using this simple building block. The PASM is designed to provide most of the necessary power switching functions of spacecraft for various Deep Space missions including future missions to Mars, comets, Jupiter and its moons. It is fabricated using an ASIC process that is tolerant of high radiation. The development included two application specific integrated circuits (ASICs) and support circuitry all packaged using High Density Interconnect (HDI) technology. It can be operated in series or parallel with other PASMs. It can be used as a high-side or low-side switch and it can drive thruster valves, pyrotechnic devices such as NASA standard initiators, bus shunt resistors, and regular spacecraft component loads. Each PASM contains two independent switches with internal current limiting and over-current trip-off functions to protect the power subsystem from load faults. During turnon and turnoff each switch can limit the rate of current change (di/dt) to a value determined by the user. Three-way majority-voted On/Off commandability and full switch status telemetry (both analog and digital) are built into the module. This paper is a follow up to the one presented at he IECEC 2004 conference that will include the lessons learned and test results from the development.

X2000↗
DOE OSTI2025

Purely electronic insulator-metal transition in rutile VO 2

Volatile resistive switching in neuromorphic computing can be tuned by external stimuli such as temperature or electric-field. However, this type of switching is generally coupled to structural changes, resulting in slower reaction speed and higher energy consumption when incorporated into an electronic device. The vanadium dioxide (VO 2 ), which has near room temperature metal-insulator transition (MIT), is an archetypical volatile resistive switching system. Here, we demonstrate an isostructural MIT in an ultrathin VO 2 film capped with a photoconductive cadmium sulfide (CdS) layer. Transmission electron microscopy, resistivity experiments, and first-principles calculations show that the hole carriers induced by CdS photovoltaic effect are driving the MIT in rutile VO 2 . The insulating-rutile VO 2 phase has been proved and can remain stable for hours. Our finding provides a new approach to produce purely electronically driven MIT in VO 2 , and widens its applications in fast-response, low-energy neuromorphic devices.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2026

Quantum Theory of Surface Lattice Resonances

The collective interactions of nanoparticles arranged in periodic structures give rise to high‐ in‐plane diffractive modes known as surface lattice resonances. Although these resonances and their broader implications have been extensively studied within the framework of classical electrodynamics and linear response theory, a quantum optical theory capable of describing the dynamics of these structures, especially in the presence of material nonlinearities beyond ad hoc few‐mode approximations, is largely missing. To this end, we consider a lattice of metallic nanoparticles coupled to the electromagnetic field and derive the quantum input–output relations within the electric dipole approximation. As applications, we analyze coupling between the nanoparticle array and external quantum emitters, and show how the formalism extends to molecular optomechanics, where the high ‐factors of SLRs enable coupling to collective vibrational modes. We further consider arrays composed of saturable excitonic emitters, demonstrating how emitter nonlinearities can be used to switch the SLR condition between electronic transitions. Using a perturbative approach that accounts for population dynamics, we show how these effects can be probed in pump–probe experiments and give rise to nonlinear phase‐matching phenomena. Our work provides a microscopic framework for modeling SLRs interacting with quantum emitters without phenomenological descriptions of the electromagnetic environment.

molecular optomechanics↗
DOE OSTI2025

Ferroelectric Al 1− x B x N sputtered thin films on n -type Si bottom electrodes

Ferroelectric Al 1−x B x N thin films are grown on highly doped and plasma treated (100) n-type Si. We demonstrate ferroelectricity for x = < 0.01, 0.02, 0.06, 0.08, 0.13, and 0.17 where the n-type Si is both the substrate and bottom electrode. Polarization hysteresis reveals remanent polarization values between 130 and 140 μC/cm 2 and coercive field values as low as 4 MV/cm at 1 Hz with low leakage. The highest resistivity and most saturating hysteresis occurs with B contents between x = 0.06 and 0.13. We also demonstrate the impact of substrate plasma treatment time on Al 1−x B x N crystallinity and switching. Cross-sectional transmission electron microscopy and electron energy loss spectra reveal an amorphous 3.5 nm SiN x layer at the Al 1−x B x N interface post-plasma treatment and deposition. The first ~ 5 nm of Al 1−x B x N is crystallographically defective. Using the n-type Si substrate, we demonstrate Al 1−x B x N thickness scaling to 25 nm via low-frequency hysteresis and CV. Serving as the bottom electrode and substrate, the n-type Si enables a streamlined growth process for Al 1−x B x N for a wide range of Al 1−x B x N compositions and layer thicknesses.

36 MATERIALS SCIENCE↗
NASA NTRS1972

Investigation of L-band shipboard antennas for maritime satellite applications

A basic conceptual investigation of low cost L-band antenna subsystems for shipboard use was conducted by identifying the various pertinent design trade-offs and related performance characteristics peculiar to the civilian maritime application, and by comparing alternate approaches for their simplicity and general suitability. The study was not directed at a single specific proposal, but was intended to be parametric in nature. Antenna system concepts were to be investigated for a range of gain of 3 to 18 dB, with a value of about 10 dB considered as a baseline reference. As the primary source of potential complexity in shipboard antennas, which have beamwidths less than hemispherical as the beam pointing or selecting mechanism, major emphasis was directed at this aspect. Three categories of antenna system concepts were identified: (1) mechanically pointed, single-beam antennas; (2) fixed antennas with switched-beams; and (3) electronically-steered phased arrays. It is recommended that an L-band short backfire antenna subsystem, including a two-axis motor driven gimbal mount, and necessary single channel monopulse tracking receiver portions be developed for demonstration of performance and subsystem simplicity.

Heckert, G. P.↗
NASA NTRS1974

Design, fabrication, test and delivery of a K-band antenna breadboard model

The results of a research effort to develop a Ku-Band single channel monopulse antenna with significant improvements in efficiency and bandwidth are reported. A single aperture, multimode horn, utilized in a near field Cassegrainian configuration, was the technique selected for achieving the desired efficiency and bandwidth performance. In order to provide wide polarization flexibility, a wire grid, space filter polarizer was developed. A solid state switching network with appropriate driving electronics provides the receive channel sum and difference signal interface with an existing Apollo type tracking electronics subsystem. A full scale breadboard model of the antenna was fabricated and tested. Performance of the model was well within the requirements and goals of the contract.

Source record↗
NASA NTRS1980

Conserving power in computer memories

Power control system for electronic memories saves energy by switching off power to portions of memories that are not in use. Although power-off period lasts only a few microseconds or milliseconds, it amounts to sizable part of overall read/write cycle timer; large energy savings can be realized.

Source record↗
NASA NTRS1990

High speed all optical networks

An inherent problem of conventional point-to-point wide area network (WAN) architectures is that they cannot translate optical transmission bandwidth into comparable user available throughput due to the limiting electronic processing speed of the switching nodes. The first solution to wavelength division multiplexing (WDM) based WAN networks that overcomes this limitation is presented. The proposed Lightnet architecture takes into account the idiosyncrasies of WDM switching/transmission leading to an efficient and pragmatic solution. The Lightnet architecture trades the ample WDM bandwidth for a reduction in the number of processing stages and a simplification of each switching stage, leading to drastically increased effective network throughputs. The principle of the Lightnet architecture is the construction and use of virtual topology networks, embedded in the original network in the wavelength domain. For this construction Lightnets utilize the new concept of lightpaths which constitute the links of the virtual topology. Lightpaths are all-optical, multihop, paths in the network that allow data to be switched through intermediate nodes using high throughput passive optical switches. The use of the virtual topologies and the associated switching design introduce a number of new ideas, which are discussed in detail.

Chlamtac, Imrich↗
NASA NTRS1992

SNS Heterojunctions With New Combinations Of Materials

New combinations of materials proposed for superconductor/normal-metal/superconductor (SNS) heterojunctions in low-temperature electronic devices such as fast switches, magnetometers, and mixers. Epitaxial heterojunctions formed between high-temperature superconductors and either oxide semiconductors or metals. Concept offers alternative to other three-layer heterojunction concepts; physical principles of operation permit SNS devices to have thicker barrier layers and fabricated more easily.

Vasquez, Richard P.↗
NASA NTRS1993

High speed all-optical networks

An inherent problem of conventional point-to-point WAN architectures is that they cannot translate optical transmission bandwidth into comparable user available throughput due to the limiting electronic processing speed of the switching nodes. This report presents the first solution to WDM based WAN networks that overcomes this limitation. The proposed Lightnet architecture takes into account the idiosyncrasies of WDM switching/transmission leading to an efficient and pragmatic solution. The Lightnet architecture trades the ample WDM bandwidth for a reduction in the number of processing stages and a simplification of each switching stage, leading to drastically increased effective network throughputs.

Chlamtac, Imrich↗
NASA NTRS1993

Laser with optically driven Q-switch

An optically driven interactive Q-switch, i.e., a Q-switch that responds to a short pulse of light, for example, from external light-emitting diodes (LEDs) or diode lasers, is provided for producing an output laser pulse from electronic energy stored in a laser medium. Q-switching is thus achieved on demand by electrically pulsing the light source to produce a pulse of light directed onto a Q-switch medium in the laser cavity. Electronic control of the light pulse from the external source will thus provide not only efficient Q-switching frequency but also independent control of output laser pulse width with a fast rise time for each output laser pulse.

Hemmati, Hamid↗
NASA NTRS1999

Electrical Impact of SiC Structural Crystal Defects on High Electric Field Devices

Commercial epilayers are known to contain a variety of crystallographic imperfections. including micropipes, closed core screw dislocations. low-angle boundaries, basal plane dislocations, heteropolytypic inclusions, and non-ideal surface features like step bunching and pits. This paper reviews the limited present understanding of the operational impact of various crystal defects on SiC electrical devices. Aside from micropipes and triangular inclusions whose densities have been shrinking towards manageably small values in recent years, many of these defects appear to have little adverse operational and/or yield impact on SiC-based sensors, high-frequency RF, and signal conditioning electronics. However high-power switching devices used in power management and distribution circuits have historically (in silicon experience) demanded the highest material quality for prolonged safe operation, and are thus more susceptible to operational reliability problems that arise from electrical property nonuniformities likely to occur at extended crystal defects. A particular emphasis is placed on the impact of closed-core screw dislocations on high-power switching devices, because these difficult to observe defects are present in densities of thousands per cm,in commercial SiC epilayers. and their reduction to acceptable levels seems the most problematic at the present time.

Neudeck, Philip G.↗
NASA NTRS1999

Thermal and Mechanical Microspacecraft Technologies for X-2000 Future Deliveries

Thermal and mechanical technologies are an important part of the X-2000 Future Delivery (X-2000 FD) microspacecraft. A wide range of future space missions are expected to utilize the technologies and the architecture developed by the X-2000 FD. These technologies, besides being small in physical size, make the tiny spacecraft robust and flexible. The X2000 FD architecture is designed to be highly reliable and suitable for a wide range of missions such as planetary landers/orbiters/flybys, earth orbiters, cometary flybys/landers/sample returns, etc. One of the key ideas used in the development of these technologies and architecture is that several functions be in included in each of the thermal and mechanical elements. One of the thermal architecture being explored for the X-2000 FD microspacecraft is integrated thermal energy management of the complete spacecraft using a fluid loop. The robustness and the simplicity of the loop and the flexibility with which it can be integrated in the spacecraft have made it attractive for applications to X-2000 FD. Some of the thermal technologies to be developed as a part of this architecture are passive and active cooling loops, electrically variable emittance surfaces, miniature thermal switches, and specific high density electronic cooling technologies. In the mechanical area, multifunction architecture for the structural elements will be developed. The multifunction aspect is expected to substantially reduce the mass and volume of the spacecraft. Some of the technologies that will be developed are composite material panels incorporating electronics, cabling, and thermal elements in them. The paper to be presented at the 1999 conference, will describe the progress made so far in the microspacecraft thermal and mechanical technologies and approaches for the X2000 Future Deliveries microspacecraft.

Birur, Gaj↗
NASA NTRS1999

Thermal and Mechanical Microspacecraft Technologies for Deep Space Systems Program X2000 Future Deliveries

Thermal and mechanical technologies are an important part of the Deep Space Systems Technology (DSST) Program X2000 Future Deliveries (FD) microspacecraft. A wide range of future space missions are expected to utilize the technologies and the architecture developed by DSST FD. These technologies, besides being small in physical size, make the tiny spacecraft robust and flexible. The DSST FD architecture is designed to be highly reliable and suitable for a wide range of missions such as planetary landers/orbiters/flybys, earth orbiters, cometary flybys/landers/sample returns, etc. Two of the key ideas used in the development of thermal and mechanical technologies and architectures are: 1) to include several of the thermal and mechanical functions in any given single spacecraft element and 2) the architecture be modular so that it can easily be adapted to any of the future missions. One of the thermal architectures being explored for the DSST FD microspacecraft is the integrated thermal energy management of the complete spacecraft using a fluid loop. The robustness and the simplicity of the loop and the flexibility with which it can be integrated in the spacecraft have made it attractive for applications to DSST FD. Some of the thermal technologies to be developed as a part of this architecture are passive and active cooling loops, electrically variable emittance surfaces, miniature thermal switches, and specific high density electronic cooling technologies. In the mechanical area, multifunction architecture for the structural elements will be developed. The multifunction aspect is expected to substantially reduce the mass and volume of the spacecraft. Some of the technologies that will be developed are composite material panels incorporating electronics, cabling, and thermal elements in them. The paper describes the current state of the technologies and progress to be made in the thermal and mechanical technologies and approaches for the DSST Future Deliveries microspacecraft.

Birur, Gajanana C.↗