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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 199 records · Page 11
All sourcesNASA NTRSDOE OSTI
NASA NTRS2007

Performance Measurement of a Multi-Level/Analog Ferroelectric Memory Device Design

Increasing the memory density and utilizing the unique characteristics of ferroelectric devices is important in making ferroelectric memory devices more desirable to the consumer. This paper describes the characterization of a design that allows multiple levels to be stored in a ferroelectric based memory cell. It can be used to store multiple bits or analog values in a high speed nonvolatile memory. The design utilizes the hysteresis characteristic of ferroelectric transistors to store an analog value in the memory cell. The design also compensates for the decay of the polarization of the ferroelectric material over time. This is done by utilizing a pair of ferroelectric transistors to store the data. One transistor is used a reference to determinethe amount of decay that has occurred since the pair was programmed. The second transistor stores the analog value as a polarization value between zero and saturated. The design allows digital data to be stored as multiple bits in each memory cell. The number of bits per cell that can be stored will vary with the decay rate of the ferroelectric transistors and the repeatability of polarization between transistors. This paper presents measurements of an actual prototype memory cell. This prototype is not a complete implementation of a device, but instead, a prototype of the storage and retrieval portion of an actual device. The performance of this prototype is presented with the projected performance of the overall device. This memory design will be useful because it allows higher memory density, compensates for the environmental and ferroelectric aging processes, allows analog values to be directly stored in memory, compensates for the thermal and radiation environments associated with space operations, and relies only on existing technologies.

MacLeod, Todd C.↗
DOE OSTI2021

Sub-Microsecond Polarization Switching in (Al,Sc)N Ferroelectric Capacitors Grown on Complementary Metal-Oxide-Semiconductor-Compatible Aluminum Electrodes

In this work, the frequency-dependent ferroelectric properties of 45 nm (Al,Sc)N films sputter deposited on complementary metal–oxide–semiconductor (CMOS)-compatible Al metal electrodes are measured and compared. Low in-plane compressive stress (-10 ± 20 MPa) is observed in (Al,Sc)N thin films deposited on Al electrodes. The (Al,Sc)N films exhibit an imprint in the measured coercive fields (E c ) of -4.3/+5.3 MV cm -1 at 10 kHz. Using positive-up negative-down (PUND) measurements, ferroelectric switching is observed within ≈200 ns of an applied voltage pulse, which demonstrates the ability of ferroelectric (Al,Sc)N to achieve the fast read/write speeds desired in memory devices.

77 NANOSCIENCE AND NANOTECHNOLOGY↗
DOE OSTI2022

Spin-phonon resonances in nearly polar metals with spin-orbit coupling

In metals in the vicinity of a polar transition, interactions between electrons and soft phonon modes remain to be determined. Here we explore the consequences of spin-orbit assisted electron-phonon coupling on the collective modes of such nearly polar metals in the presence of magnetic field. We find that the soft polar phonon hybridizes with spin-flip electronic excitations of the Zeeman-split bands leading to an anticrossing. The associated energy splitting allows for an unambiguous determination of the strength of the spin-orbit mediated coupling to soft modes in polar metals by spectroscopic experiments. Here, the approach to the polar transition is reflected by the softening of the effective g factor of the hybridized spin-flip mode. Analyzing the static limit, we find that the polar order parameter can be oriented by magnetic field. This provides possibilities for alternative switching protocols in polar metallic materials. We demonstrate that the effects we predict can be observed with current experimental techniques and discuss promising material candidates.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2025

Polarization Switching on the Open Surfaces of the Wurtzite Ferroelectric Nitrides: Ferroelectric Subsystems and Electrochemical Reactivity

Binary ferroelectric nitrides are promising materials for information technologies and power electronics. However, polarization switching in these materials is highly unusual. From the structural perspective, polarization reversal is associated with the change of the effective polarity at the surfaces and interfaces from N‐to‐M terminated, suggesting strong coupling between ferroelectric and chemical phenomena. Phenomenologically, macroscopic studies demonstrate the presence of complex time dependent phenomena including wake‐up. Here, in this study, the polarization switching using the multidimensional high‐resolution piezoresponse force microscopy (PFM) and spectroscopy is explored, detecting both the evolution of induced ferroelectric domain, electromechanical response, and surface deformation during first‐order reversal curve measurements. The presence of two weakly coupled ferroelectric subsystems are demonstrated and the bias‐induced electrochemical reactivity. The observed behaviors are very similar to the recent studies of other wurtzite system but additionally include electrochemical reactivity, suggesting the universality of these behaviors for the wurtzite binary ferroelectrics. These studies suggest potential of high‐resolution multimodal PFM spectroscopies to resolve complex coupled polarization dynamics in materials. Furthermore, these PFM based studies are fully consistent with the recent electron microscopy observations of the shark‐teeth like ferroelectric domains in nitrides. Hence, it is believed that these studies establish the universal phenomenological picture of polarization switching in binary wurtzite.

36 MATERIALS SCIENCE↗
DOE OSTI2025

Tip-based proximity ferroelectric switching and piezoelectric response in wurtzite multilayers

Proximity ferroelectricity is a paradigm for inducing ferroelectricity when a nonferroelectric polar material (such as Al⁢ N), which is unswitchable with an external field below the dielectric breakdown field, becomes a practically switchable ferroelectric in direct contact with a thin switchable ferroelectric layer (such as Al 1−𝑥 ⁢Sc 𝑥 ⁢N). Here, we develop a Landau-Ginzburg-Devonshire approach to study the proximity effect of local piezoelectric response and polarization reversal in wurtzite ferroelectric multilayers under a sharp electrically biased tip. Using finite-element modeling, we analyze the probe-induced nucleation of nanodomains, the features of local polarization hysteresis loops and coercive fields in the Al 1−𝑥 ⁢Sc 𝑥 ⁢N/Al⁢ N bilayers and three-layers. Similar to the wurtzite multilayers sandwiched between two parallel electrodes, the regimes of “proximity switching” (when all layers collectively switch) and the regime of “proximity suppression” (when they collectively do not switch) are the only two possible regimes in the probe-electrode geometry. However, the parameters and asymmetry of the local piezoresponse and polarization hysteresis loops depend significantly on the sequence of the layers with respect to the probe. The physical mechanism of proximity ferroelectricity in the local probe geometry is a depolarizing electric field determined by the polarization of the layers and their relative thickness. The field, whose direction is opposite to the polarization vector in the layer(s) with the larger spontaneous polarization (such as Al⁢ N), renormalizes the double-well ferroelectric potential to lower the steepness of the switching barrier in the “otherwise unswitchable” polar layers. Tip-based control of domains in otherwise nonferroelectric layers using proximity ferroelectricity can provide nanoscale control of domain reversal in memory, actuation, sensing, and optical applications. The ability of the tip-induced proximity switching to differentially switch multilayers, based on the order of the layers, provides a powerful tool for selective domain engineering.

36 MATERIALS SCIENCE↗
DOE OSTI2023

Photocarrier-induced persistent structural polarization in soft-lattice lead halide perovskites

The success of the lead halide perovskites in diverse optoelectronics has motivated considerable interest in their fundamental photocarrier dynamics. Here, in this work, we report the discovery of photocarrier-induced persistent structural polarization and local ferroelectricity in lead halide perovskites. Photoconductance studies of thin-film single-crystal CsPbBr 3 at 10 K reveal long-lasting persistent photoconductance with an ultralong photocarrier lifetime beyond 10 6 s. X-ray diffraction studies reveal that photocarrier-induced structural polarization is present up to a critical freezing temperature. Photocapacitance studies at cryogenic temperatures further demonstrate a systematic local phase transition from linear dielectric to paraelectric and relaxor ferroelectric under increasing illumination. Our theoretical investigations highlight the critical role of photocarrier–phonon coupling and large polaron formation in driving the local relaxor ferroelectric phase transition. Our findings show that this photocarrier-induced persistent structural polarization enables the formation of ferroelectric nanodomains at low temperature, which suppress carrier recombination and offer the possibility of exploring intriguing carrier–phonon interplay and the rich polaron photophysics.

77 NANOSCIENCE AND NANOTECHNOLOGY↗
DOE OSTI2020

Reversible magnetism transition at ferroelectric oxide heterointerface

Oxide heterointerface is a platform to create unprecedented two-dimensional electron gas, superconductivity and ferromagnetism, arising from a polar discontinuity at the interface. In particular, the ability to tune these intriguing effects paves a way to elucidate their fundamental physics and to develop novel electronic/magnetic devices. Here, we report for the first time that a ferroelectric polarization screening at SrTiO 3 /PbTiO 3 interface is able to drive an electronic construction of Ti atom, giving rise to room-temperature ferromagnetism. Surprisingly, such ferromagnetism can be switched to antiferromagnetism by applying a magnetic field, which is reversible. A coupling of itinerant electrons with local moments at interfacial Ti 3d orbital was proposed to explain the magnetism. The localization of the itinerant electrons under a magnetic field is responsible for the suppression of magnetism. These findings provide new insights into interfacial magnetism and their control by magnetic field relevant interfacial electrons promising for device applications.

36 MATERIALS SCIENCE↗
DOE OSTI2024

ReaxFF Reactive Force Field for Exploring Electronically Switchable Polarization in Zn 1– x Mg x O Ferroelectric Semiconductors

Cation misfit in traditional ferroelectric crystals offers a new material platform that can drive electronic components toward structural miniaturization and high-density integration, enabling deviation from von-Neumann architectures. Here, we explore ferroelectricity in Zn 1–x Mg x O, a nontraditional ferroelectric material with tunable properties. Using data from density-functional theory calculations, we have developed a ReaxFF reactive force field to explore the ferroelectric properties of Zn 1–x Mg x O and reveal the hysteresis behavior. We discover that ferroelectric switching can be observed at a critical thickness of 10 nm with a residual polarization of ~100 μC/cm 2 . Our analysis indicates that an increase in Mg-substitution correlates with a decrease in the coercive field. We also observe a strong temperature dependence of the coercive field in Zn 1–x Mg x O, with values decreasing as the temperature increases. Additionally, we find that the distribution of Mg atoms significantly impacts the coercive field, with a clustered distribution leading to a substantial increase. In particular, a decrease in coercive field values is observed when Mg atoms are randomly distributed, compared to uniform distribution. Furthermore, leveraging tunable hysteresis behavior offered by varied percentages and distribution of Mg-substitution provides valuable insights into the design of next-generation functional devices and will inspire further investigations.

36 MATERIALS SCIENCE↗
NASA NTRS2006

Silicon-Based Optical Modulator with Ferroelectric Layer

According to a proposal, a silicon dioxide layer in a high-speed, low-power, silicon- based electro-optical modulator would be replaced by a layer of lead zirconate titanate or other ferroelectric oxide material. The purpose of this modification is to enhance the power performance and functionality of the modulator. In its unmodified form, the particular silicon- based electro-optical modulator is of an advanced design that overcomes the speed limitation of prior silicon-based electro- optical modulators. Whereas modulation frequencies of such devices had been limited to about 20 MHz, this modulator can operate at modulation frequencies as high as 1 GHz. This modulator can be characterized as a silicon-waveguide-based metal oxide/semiconductor (MOS) capacitor phase shifter in which modulation of the index of refraction in silicon is obtained by exploiting the free-charge-carrier-plasma dispersion effect. As shown in the figure, the modulator includes an n-doped crystalline silicon slab (the silicon layer of a silicon- on-insulator wafer) and a p-doped polycrystalline silicon rib with a gate oxide layer (the aforementioned silicon dioxide layer) sandwiched between them. Under accumulation conditions, the majority charge carriers in the silicon waveguide modify the index of refraction so that a phase shift is induced in the optical mode propagating in the waveguide. The advantage of using an MOS capacitor phase shifter is that it is possible to achieve high modulation speed because there are no slow carrier-generation or -recombination processes involved in the accumulation operation. The main advantage of the proposed substitution of a ferroelectric oxide layer for the silicon dioxide layer would arise from the spontaneous polarization effect of the ferroelectric layer: This spontaneous polarization would maintain accumulation conditions in the absence of applied voltage. Consequently, once the device had been switched to a given optical state, it would remain in that state, even in the absence of applied voltage (in other words, even with power turned off). A secondary advantage is that because the ferroelectric layer would have an index of refraction larger than that of silicon dioxide, there could be some reduction of optical losses attributable to fabrication of the modulator

Sheldon, Douglas↗
NASA NTRS1982

Performing spectroscopic and specific heat studies of improper ferroelectrics

The results of infrared measurements on Ni-Br, Cu-Cl, and Fe-I boracite improper ferroelectrics and far infrared measurements of Ni-Br boracite are presented. The boracites have the general formula X3B7O3Y, where X = divalent metal and Y = halogen. They undergo a first order phase transition from a high temperature paraelectric phase with cubic symmetry to a ferroelectric phase with orthorhombic symmetry. The boracites are "improper ferroelectrics" since the spontaneous polarization is not the primary order parameter in the cubic-orthorhombic phase transition. Current understanding of these materials is that the primary order parameter is associated with a doubly degenerate zone-boundary phonon in the cubic phase. The degenerate critical modes become homogeneous and split into the A sub 1 and A sub 2 modes in the orthorhombic phase, doubling the volume of the primitive cell. An harmonic coupling between the softing A sub 1 and a low frequency A sub 1 optic mode induces a spontaneous polarization as a secondary effect in the ferroelectric phase. This secondary non-critical nature of the ferroelectric mode earns these materials the "improper" title and is responsible for their unique properties and high figure of merit in detector use.

Coleman, L. B.↗
DOE OSTI2020

Unconventional crystal-field splitting in noncentrosymmetric BaTiO 3 thin films

Understanding the crystal-field splitting and orbital polarization in noncentrosymmetric systems such as ferroelectric materials is fundamentally important. In this work, taking BaTiO 3 as a representative material, we investigate titanium crystal-field splitting and orbital polarization in noncentrosymmetric TiO 6 octahedra with resonant x-ray linear dichroism at the Ti L 2,3 edge. The high-quality BaTiO 3 thin films were deposited on DyScO 3 (110) single crystal substrates in a layer-by-layer way by pulsed laser deposition. The reflection high-energy electron diffraction and element specific x-ray absorption spectroscopy were performed to characterize the structural and electronic properties of the films. In sharp contrast to conventional crystal-field splitting and orbital configuration (d xz /d yz < d xy < d 3z 2 -r 2 < d x 2 -y 2 or d xy < d xz /d yz < d x 2 -y 2 < d 3z 2 -r 2 ) expected from compressive or tensile epitaxial strain, respectively, it is revealed that d xz , d yz , and d xy orbitals are nearly degenerate, whereas d 3z 2 -r 2 and d x 2 -y 2 orbitals are split with an energy gap ~100 meV in the epitaxial BaTiO 3 films. We find that the unexpected degenerate orbitals d xz /d yz /d xy result from the competition between the orbital splitting induced by epitaxial strain and that induced by polar distortions of BaTiO 3 films. Our results provide a route to manipulate orbital degree of freedom by switching electric polarization in ferroelectric materials.

36 MATERIALS SCIENCE↗
DOE OSTI2023

Theory of criticality for quantum ferroelectric metals

A variety of compounds, for example, doped paraelectrics and polar metals, exhibit both ferroelectricity and correlated electronic phenomena such as low-density superconductivity and anomalous transport. Characterizing such properties is tied to understanding the quantum dynamics of inversion symmetry breaking in the presence of itinerant electrons. Here, we present a comprehensive analysis of the properties of a metal near a quantum critical transition to a ferroelectric state, in both two and three dimensions. In this study, starting from a minimal model of electrons coupled to a transverse polar phonon via a Rashba-type spin-orbit interaction, we compute the dynamical response of both electrons and phonons. We find that the system can evince both Fermi and non-Fermi liquid phases, as well as enhanced pairing in both singlet and triplet channels. Furthermore, we systematically compute corrections to one-loop theory and find a tendency to quantum order-by-disorder, leading to a phase diagram that can include second-order, first-order, and finite-momentum phase transitions. Finally, we show that the entire phase diagram can be controlled via application of external strain, either compressive or volume-preserving. Our results provide a map of the dynamical and thermodynamical phase space of quantum ferroelectic metals, which can serve in characterizing existing materials and in seeking applications for quantum technologies.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2020

Born effective charges and electric polarization in bulk ε-Fe 2 O 3 : An ab-initio approach

Limitation in the synthesis of single-crystal has restricted the complete understanding of the magnetoelectric properties of bulk ε-Fe 2 O 3 . In order to understand the electric polarization of bulk ε-Fe 2 O 3 , we have employed a first-principles Berry-phase method and the density functional perturbation theory to calculate the spontaneous electric polarization and Born effective charges (BECs) of ε-Fe 2 O 3 . The polarization quanta of the ferroelectric bulk ε-Fe 2 O 3 and its polarization lattice are also reported. The polarization switching through a paraelectric transition phase of a low barrier is found to be favorable. The polarization and BECs calculated by both methods are in good agreement.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2024

Influence of chemical strains on the electrocaloric response, polarization morphology, tetragonality, and negative-capacitance effect of ferroelectric core-shell nanorods and nanowires

Using Landau-Ginzburg-Devonshire (LGD) approach, we proposed the analytical description of the influence of chemical strains on spontaneous polarization and the electrocaloric response in ferroelectric core-shell nanorods. We postulate that the nanorod core presents a defect-free single-crystalline ferroelectric material, and elastic defects are accumulated in the ultrathin shell, where they can induce tensile or compressive chemical strains. Finite-element modeling (FEM) based on the LGD approach reveals transitions of domain-structure morphology induced by chemical strains in the Ba Ti O 3 nanorods. Namely, tensile chemical strains induce and support the single-domain state in the central part of the nanorod, while the curled domain structures appear near the unscreened or partially screened ends of the rod. The vortexlike domains propagate toward the central part of the rod and fill it entirely, when the rod is covered by a shell with compressive chemical strains above some critical value. The critical value depends on the nanorod sizes, aspect ratio, and screening conditions at its ends. Both analytical theory and FEM predict that the tensile chemical strains in the shell increase the nanorod polarization, lattice tetragonality, and electrocaloric response well above the values corresponding to the bulk material. The physical reason for the increase is strong electrostriction coupling between the mismatch-type elastic strains induced in the core by chemical strains in the shell. Comparison with earlier XRD data confirmed an increase of the tetragonality ratio in tensile Ba Ti O 3 nanorods compared to the bulk material. Obtained analytical expressions, which are suitable for the description of strain-induced changes in a wide range of multiaxial ferroelectric core-shell nanorods and nanowires, can be useful for strain engineering of advanced ferroelectric nanomaterials for energy storage, harvesting, electrocaloric applications, and negative capacitance elements. Published by the American Physical Society 2024

36 MATERIALS SCIENCE↗
DOE OSTI2020

Microscopic Manipulation of Ferroelectric Domains in SnSe Monolayers at Room Temperature

Two-dimensional (2D) van der Waals ferroelectrics provide an unprecedented architectural freedom for the creation of artificial multiferroics and nonvolatile electronic devices based on vertical and coplanar heterojunctions of 2D ferroic materials. Nevertheless, controlled microscopic manipulation of ferroelectric domains is still rare in monolayer-thick 2D ferroelectrics with in-plane polarization. Here we report the discovery of robust ferroelectricity with a critical temperature close to 400 K in SnSe monolayer plates grown on graphene and the demonstration of controlled room-temperature ferroelectric domain manipulation by applying appropriate bias voltage pulses to the tip of a scanning tunneling microscope (STM). This study shows that STM is a powerful tool for detecting and manipulating the microscopic domain structures in 2D ferroelectric monolayers, which are difficult for conventional approaches such as piezoresponse force microscopy, thus facilitating the hunt for other 2D ferroelectric monolayers with in-plane polarization with important technological applications.

2D ferroelectric↗
DOE OSTI2023

Lamellar fluctuations melt ferroelectricity.

We consider a standard Ginzburg-Landau model of a ferroelectric whose electrical polarization is coupled to gradients of elastic strain. At the harmonic level, such flexoelectric interaction is known to hybridize acoustic and optic phonon modes and lead to phases with modulated lattice structures that precede the state with spontaneously broken inversion symmetry. Here, we use the self-consistent phonon approximation to calculate the effects of thermal and quantum polarization fluctuations on the bare hybridized modes to show that such long-range modulated order is unstable at all temperatures. We discuss the implications for the nearly ferroelectric SrTiO3 and KTaO3, and we propose that these systems are melted versions of an underlying modulated state that is dominated by nonzero momentum thermal fluctuations except at the very lowest temperatures.

Guzman-Verri, G. G.↗
DOE OSTI2023

Impacts to FeRAM design arising from interfacial dielectric layers and wake up modulation in ferroelectric hafnium zirconium oxide

As ferroelectric hafnium zirconium oxide (HZO) becomes more widely utilized in ferroelectric microelectronics, integration impacts of intentional and non-intentional dielectric interfaces and their effects upon the ferroelectric film wake up and circuit parameters become important to understand. In this work, the effect of the addition of a linear dielectric aluminum oxide, Al 2 O 3 , below a ferroelectric Hf 0.58 Zr 0.42 O 2 film in a capacitor structure for FeRAM applications with NbN electrodes was measured. Depolarization fields resulting from the linear dielectric is observed to induce a reduction of the remanent polarization of the ferroelectric. Addition of the aluminum oxide also impacts the wake up of the HZO with respect to the cycling voltage applied. Intricately linked to the design of a FeRAM 1C/1T cell, the metal-ferroelectric-insulator-metal (MFIM) devices are observed to significantly shift charge related to the read states based on aluminum oxide thickness and wake up cycling voltage. As a result, a 33% reduction in the separation of read states is measured, which complicates how a memory cell is designed and illustrates the importance of clean interfaces in devices.

30 DIRECT ENERGY CONVERSION↗